KR101042713B1 - 전체 설계 목적들을 달성하기 위해 핀펫 활성 표면들 상의 캐리어 이동도의 가변 - Google Patents

전체 설계 목적들을 달성하기 위해 핀펫 활성 표면들 상의 캐리어 이동도의 가변 Download PDF

Info

Publication number
KR101042713B1
KR101042713B1 KR1020067002327A KR20067002327A KR101042713B1 KR 101042713 B1 KR101042713 B1 KR 101042713B1 KR 1020067002327 A KR1020067002327 A KR 1020067002327A KR 20067002327 A KR20067002327 A KR 20067002327A KR 101042713 B1 KR101042713 B1 KR 101042713B1
Authority
KR
South Korea
Prior art keywords
fin
gate
insulating layer
carrier mobility
finfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067002327A
Other languages
English (en)
Korean (ko)
Other versions
KR20060054420A (ko
Inventor
빈 유
쉬브리 에스. 아메드
하이홍 왕
Original Assignee
글로벌파운드리즈 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 글로벌파운드리즈 인크. filed Critical 글로벌파운드리즈 인크.
Publication of KR20060054420A publication Critical patent/KR20060054420A/ko
Application granted granted Critical
Publication of KR101042713B1 publication Critical patent/KR101042713B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
KR1020067002327A 2003-08-05 2004-07-28 전체 설계 목적들을 달성하기 위해 핀펫 활성 표면들 상의 캐리어 이동도의 가변 Expired - Fee Related KR101042713B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/633,504 2003-08-05
US10/633,504 US7095065B2 (en) 2003-08-05 2003-08-05 Varying carrier mobility in semiconductor devices to achieve overall design goals

Publications (2)

Publication Number Publication Date
KR20060054420A KR20060054420A (ko) 2006-05-22
KR101042713B1 true KR101042713B1 (ko) 2011-06-20

Family

ID=34115850

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067002327A Expired - Fee Related KR101042713B1 (ko) 2003-08-05 2004-07-28 전체 설계 목적들을 달성하기 위해 핀펫 활성 표면들 상의 캐리어 이동도의 가변

Country Status (8)

Country Link
US (1) US7095065B2 (enExample)
JP (1) JP2007501524A (enExample)
KR (1) KR101042713B1 (enExample)
CN (1) CN1826696B (enExample)
DE (1) DE112004001442T5 (enExample)
GB (1) GB2419234B (enExample)
TW (1) TWI363421B (enExample)
WO (1) WO2005034207A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855607B2 (en) * 2003-06-12 2005-02-15 Advanced Micro Devices, Inc. Multi-step chemical mechanical polishing of a gate area in a FinFET
US6946377B2 (en) * 2003-10-29 2005-09-20 Texas Instruments Incorporated Multiple-gate MOSFET device with lithography independent silicon body thickness and methods for fabricating the same
US7087471B2 (en) * 2004-03-15 2006-08-08 International Business Machines Corporation Locally thinned fins
FR2899017A1 (fr) * 2006-03-21 2007-09-28 St Microelectronics Sa Procede de realisation d'un transistor a canal comprenant du germanium
US8159018B2 (en) * 2006-04-26 2012-04-17 Nxp B.V. Non-volatile memory device
US7517764B2 (en) * 2006-06-29 2009-04-14 International Business Machines Corporation Bulk FinFET device
US8883597B2 (en) * 2007-07-31 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabrication of a FinFET element
FR2928028B1 (fr) * 2008-02-27 2011-07-15 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.
FR2928029B1 (fr) * 2008-02-27 2011-04-08 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.
JP5718585B2 (ja) * 2010-05-19 2015-05-13 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法、並びにデータ処理システム
US20120146101A1 (en) * 2010-12-13 2012-06-14 Chun-Hsien Lin Multi-gate transistor devices and manufacturing method thereof
US9059001B2 (en) * 2011-12-16 2015-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with biased feature
CN113345952B (zh) 2011-12-22 2025-05-13 英特尔公司 具有颈状半导体主体的半导体器件以及形成不同宽度的半导体主体的方法
CN103474461B (zh) * 2012-06-06 2016-01-06 中芯国际集成电路制造(上海)有限公司 鳍式场效应管及其形成方法
US8841189B1 (en) * 2013-06-14 2014-09-23 International Business Machines Corporation Transistor having all-around source/drain metal contact channel stressor and method to fabricate same
US9425275B2 (en) 2014-06-13 2016-08-23 Samsung Electronics Co., Ltd. Integrated circuit chips having field effect transistors with different gate designs
US9112032B1 (en) * 2014-06-16 2015-08-18 Globalfoundries Inc. Methods of forming replacement gate structures on semiconductor devices
US9590074B1 (en) 2015-12-05 2017-03-07 International Business Machines Corporation Method to prevent lateral epitaxial growth in semiconductor devices
US10879125B2 (en) * 2018-12-27 2020-12-29 Nanya Technology Corporation FinFET structure and method of manufacturing the same
US11670675B2 (en) 2020-12-04 2023-06-06 United Semiconductor Japan Co., Ltd. Semiconductor device
CN115669260A (zh) * 2021-05-12 2023-01-31 长江存储科技有限责任公司 具有三维晶体管的存储器外围电路及其形成方法
CN113764348B (zh) * 2021-09-07 2023-06-16 上海集成电路装备材料产业创新中心有限公司 鳍式半导体器件的制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020011612A1 (en) * 2000-07-31 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112364A (ja) * 1984-11-07 1986-05-30 Hitachi Ltd 半導体装置
JPH03250770A (ja) * 1990-02-28 1991-11-08 Sony Corp 半導体装置
US5391506A (en) 1992-01-31 1995-02-21 Kawasaki Steel Corporation Manufacturing method for semiconductor devices with source/drain formed in substrate projection.
JPH06342911A (ja) * 1993-06-01 1994-12-13 Oki Electric Ind Co Ltd 半導体装置の製造方法
US6563143B2 (en) * 1999-07-29 2003-05-13 Stmicroelectronics, Inc. CMOS circuit of GaAs/Ge on Si substrate
JP2002118255A (ja) * 2000-07-31 2002-04-19 Toshiba Corp 半導体装置およびその製造方法
JP2002151688A (ja) * 2000-08-28 2002-05-24 Mitsubishi Electric Corp Ｍｏｓ型半導体装置およびその製造方法
JP2004531901A (ja) * 2001-06-21 2004-10-14 マサチューセッツ　インスティテュート　オブ　テクノロジー 歪み半導体層を備えたｍｏｓｆｅｔ
US6492212B1 (en) * 2001-10-05 2002-12-10 International Business Machines Corporation Variable threshold voltage double gated transistors and method of fabrication
US6657259B2 (en) 2001-12-04 2003-12-02 International Business Machines Corporation Multiple-plane FinFET CMOS
JP4265882B2 (ja) * 2001-12-13 2009-05-20 忠弘 大見 相補型ｍｉｓ装置
US7214991B2 (en) 2002-12-06 2007-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS inverters configured using multiple-gate transistors
US6909147B2 (en) * 2003-05-05 2005-06-21 International Business Machines Corporation Multi-height FinFETS

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020011612A1 (en) * 2000-07-31 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
CN1826696A (zh) 2006-08-30
WO2005034207A3 (en) 2005-06-30
DE112004001442T5 (de) 2006-06-08
GB0526405D0 (en) 2006-02-08
TWI363421B (en) 2012-05-01
GB2419234B (en) 2007-02-21
TW200509390A (en) 2005-03-01
KR20060054420A (ko) 2006-05-22
JP2007501524A (ja) 2007-01-25
CN1826696B (zh) 2011-01-26
US7095065B2 (en) 2006-08-22
US20050029603A1 (en) 2005-02-10
WO2005034207A2 (en) 2005-04-14
GB2419234A (en) 2006-04-19

Similar Documents

Publication Publication Date Title
KR101042713B1 (ko) 전체 설계 목적들을 달성하기 위해 핀펫 활성 표면들 상의 캐리어 이동도의 가변
US6709982B1 (en) Double spacer FinFET formation
US6787439B2 (en) Method using planarizing gate material to improve gate critical dimension in semiconductor devices
US6645797B1 (en) Method for forming fins in a FinFET device using sacrificial carbon layer
KR100993937B1 (ko) Ｕ-형태의 게이트 구조를 가지는 반도체 디바이스
US7256455B2 (en) Double gate semiconductor device having a metal gate
US7300837B2 (en) FinFET transistor device on SOI and method of fabrication
US6611029B1 (en) Double gate semiconductor device having separate gates
US6998301B1 (en) Method for forming a tri-gate MOSFET
KR20050095871A (ko) 3중 게이트 및 게이트 어라운드 ｍｏｓｆｅｔ 디바이스, 및그 제조 방법
CN103579004B (zh) FinFET及其制造方法
US6936882B1 (en) Selective silicidation of gates in semiconductor devices to achieve multiple threshold voltages
CN116230738A (zh) 制造半导体器件的方法和半导体器件
US6967175B1 (en) Damascene gate semiconductor processing with local thinning of channel region
US7416925B2 (en) Doped structure for finfet devices
US8963254B2 (en) Simultaneous formation of FinFET and MUGFET
US7432558B1 (en) Formation of semiconductor devices to achieve <100> channel orientation
US6995438B1 (en) Semiconductor device with fully silicided source/drain and damascence metal gate
US7112847B1 (en) Smooth fin topology in a FinFET device
US20240071833A1 (en) Hybrid fin-dielectric semiconductor device
WO2007054844A2 (en) Vertical insulated gate field-effect transistor and method of manufacturing the same

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140521

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150519

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160517

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170522

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180614

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180614

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000