JP2007305231A5 - - Google Patents

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Publication number
JP2007305231A5
JP2007305231A5 JP2006132895A JP2006132895A JP2007305231A5 JP 2007305231 A5 JP2007305231 A5 JP 2007305231A5 JP 2006132895 A JP2006132895 A JP 2006132895A JP 2006132895 A JP2006132895 A JP 2006132895A JP 2007305231 A5 JP2007305231 A5 JP 2007305231A5
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JP
Japan
Prior art keywords
bit line
memory cells
data
memory cell
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006132895A
Other languages
English (en)
Japanese (ja)
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JP5068035B2 (ja
JP2007305231A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006132895A priority Critical patent/JP5068035B2/ja
Priority claimed from JP2006132895A external-priority patent/JP5068035B2/ja
Priority to US11/797,804 priority patent/US7652927B2/en
Priority to CNA2007101029134A priority patent/CN101071629A/zh
Publication of JP2007305231A publication Critical patent/JP2007305231A/ja
Publication of JP2007305231A5 publication Critical patent/JP2007305231A5/ja
Application granted granted Critical
Publication of JP5068035B2 publication Critical patent/JP5068035B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006132895A 2006-05-11 2006-05-11 半導体記憶装置 Expired - Fee Related JP5068035B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006132895A JP5068035B2 (ja) 2006-05-11 2006-05-11 半導体記憶装置
US11/797,804 US7652927B2 (en) 2006-05-11 2007-05-08 Semiconductor memory device
CNA2007101029134A CN101071629A (zh) 2006-05-11 2007-05-11 半导体存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006132895A JP5068035B2 (ja) 2006-05-11 2006-05-11 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2007305231A JP2007305231A (ja) 2007-11-22
JP2007305231A5 true JP2007305231A5 (enExample) 2009-04-30
JP5068035B2 JP5068035B2 (ja) 2012-11-07

Family

ID=38684950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006132895A Expired - Fee Related JP5068035B2 (ja) 2006-05-11 2006-05-11 半導体記憶装置

Country Status (3)

Country Link
US (1) US7652927B2 (enExample)
JP (1) JP5068035B2 (enExample)
CN (1) CN101071629A (enExample)

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US9601493B2 (en) 2006-11-29 2017-03-21 Zeno Semiconductor, Inc Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
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US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
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JP5135608B2 (ja) * 2007-12-27 2013-02-06 ルネサスエレクトロニクス株式会社 半導体記憶装置
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
JP5194302B2 (ja) * 2008-02-20 2013-05-08 ルネサスエレクトロニクス株式会社 半導体信号処理装置
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) * 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8748959B2 (en) 2009-03-31 2014-06-10 Micron Technology, Inc. Semiconductor memory device
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
CN102598140A (zh) 2009-12-04 2012-07-18 拉姆伯斯公司 支持低存储器单元电容的dram读出放大器
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
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KR101079201B1 (ko) * 2010-02-26 2011-11-03 주식회사 하이닉스반도체 반도체 메모리 장치
US9922981B2 (en) 2010-03-02 2018-03-20 Zeno Semiconductor, Inc. Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
US10461084B2 (en) 2010-03-02 2019-10-29 Zeno Semiconductor, Inc. Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
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US9368625B2 (en) 2013-05-01 2016-06-14 Zeno Semiconductor, Inc. NAND string utilizing floating body memory cell
CN104733037B (zh) * 2015-03-27 2018-10-16 西安紫光国芯半导体有限公司 一种控制位线泄放电流的装置
CN109903790A (zh) * 2017-12-11 2019-06-18 旺宏电子股份有限公司 存储器装置及其操作方法
US11169726B2 (en) * 2018-09-13 2021-11-09 Toshiba Memory Corporation Pool-level storage management
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US20240407151A1 (en) * 2023-05-30 2024-12-05 Macronix International Co., Ltd. Memory cell circuit, memory cell array structure and manufacturing method thereof

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JPH10255487A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体メモリ装置
TW448611B (en) * 1999-05-21 2001-08-01 Ibm Method and apparatus for fast SOI based amplifier
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JP4032039B2 (ja) 2004-04-06 2008-01-16 株式会社東芝 半導体記憶装置
JP4110115B2 (ja) * 2004-04-15 2008-07-02 株式会社東芝 半導体記憶装置
JP4149961B2 (ja) 2004-05-20 2008-09-17 株式会社東芝 半導体記憶装置
CN1965404B (zh) * 2004-06-09 2010-05-26 株式会社瑞萨科技 半导体存储装置
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JP4406413B2 (ja) * 2006-04-18 2010-01-27 株式会社東芝 半導体記憶装置及びその読み出し方法
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