JP2002198499A5 - - Google Patents

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Publication number
JP2002198499A5
JP2002198499A5 JP2000395933A JP2000395933A JP2002198499A5 JP 2002198499 A5 JP2002198499 A5 JP 2002198499A5 JP 2000395933 A JP2000395933 A JP 2000395933A JP 2000395933 A JP2000395933 A JP 2000395933A JP 2002198499 A5 JP2002198499 A5 JP 2002198499A5
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JP
Japan
Prior art keywords
bit line
gate electrode
gate
write
mis transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000395933A
Other languages
English (en)
Japanese (ja)
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JP2002198499A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000395933A priority Critical patent/JP2002198499A/ja
Priority claimed from JP2000395933A external-priority patent/JP2002198499A/ja
Publication of JP2002198499A publication Critical patent/JP2002198499A/ja
Publication of JP2002198499A5 publication Critical patent/JP2002198499A5/ja
Pending legal-status Critical Current

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JP2000395933A 2000-12-26 2000-12-26 半導体記憶装置 Pending JP2002198499A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000395933A JP2002198499A (ja) 2000-12-26 2000-12-26 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000395933A JP2002198499A (ja) 2000-12-26 2000-12-26 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2002198499A JP2002198499A (ja) 2002-07-12
JP2002198499A5 true JP2002198499A5 (enExample) 2005-07-14

Family

ID=18861309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000395933A Pending JP2002198499A (ja) 2000-12-26 2000-12-26 半導体記憶装置

Country Status (1)

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JP (1) JP2002198499A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042172A (ja) * 2005-08-01 2007-02-15 Sony Corp 半導体メモリ装置
TWI605549B (zh) * 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
US9343480B2 (en) * 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
US9312257B2 (en) * 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6100559B2 (ja) * 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
KR101881447B1 (ko) 2012-03-22 2018-07-25 삼성전자주식회사 커패시터리스 메모리 소자
KR101944535B1 (ko) * 2012-03-28 2019-01-31 삼성전자주식회사 반도체 기억 소자
US9208826B2 (en) * 2012-03-30 2015-12-08 Sharp Kabushiki Kaisha Semiconductor storage device with two control lines
CN115440265B (zh) * 2021-06-01 2024-05-17 长鑫存储技术有限公司 存储器
WO2024194726A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置、及び、半導体装置の作製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3745392B2 (ja) * 1994-05-26 2006-02-15 株式会社ルネサステクノロジ 半導体装置
JPH11126491A (ja) * 1997-08-20 1999-05-11 Fujitsu Ltd 半導体記憶装置
JP2000269358A (ja) * 1999-03-17 2000-09-29 Hitachi Ltd 半導体装置およびその製造方法

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