JP2002198499A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2002198499A
JP2002198499A JP2000395933A JP2000395933A JP2002198499A JP 2002198499 A JP2002198499 A JP 2002198499A JP 2000395933 A JP2000395933 A JP 2000395933A JP 2000395933 A JP2000395933 A JP 2000395933A JP 2002198499 A JP2002198499 A JP 2002198499A
Authority
JP
Japan
Prior art keywords
bit line
memory cell
transistor
write
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000395933A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002198499A5 (enExample
Inventor
Katsuyuki Fujita
勝之 藤田
Yoshihisa Iwata
佳久 岩田
Takashi Osawa
隆 大沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000395933A priority Critical patent/JP2002198499A/ja
Publication of JP2002198499A publication Critical patent/JP2002198499A/ja
Publication of JP2002198499A5 publication Critical patent/JP2002198499A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Dram (AREA)
JP2000395933A 2000-12-26 2000-12-26 半導体記憶装置 Pending JP2002198499A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000395933A JP2002198499A (ja) 2000-12-26 2000-12-26 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000395933A JP2002198499A (ja) 2000-12-26 2000-12-26 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2002198499A true JP2002198499A (ja) 2002-07-12
JP2002198499A5 JP2002198499A5 (enExample) 2005-07-14

Family

ID=18861309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000395933A Pending JP2002198499A (ja) 2000-12-26 2000-12-26 半導体記憶装置

Country Status (1)

Country Link
JP (1) JP2002198499A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042172A (ja) * 2005-08-01 2007-02-15 Sony Corp 半導体メモリ装置
JP2012212499A (ja) * 2011-03-18 2012-11-01 Semiconductor Energy Lab Co Ltd 記憶装置及び電子機器
JP2012256818A (ja) * 2010-08-16 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
WO2013146039A1 (ja) * 2012-03-30 2013-10-03 シャープ株式会社 半導体記憶装置
CN103367369A (zh) * 2012-03-28 2013-10-23 三星电子株式会社 半导体存储器件
US8941173B2 (en) 2012-03-22 2015-01-27 Samsung Electronics Co., Ltd. Capacitorless memory device
JP2017126763A (ja) * 2012-03-05 2017-07-20 株式会社半導体エネルギー研究所 半導体記憶装置
CN115440265A (zh) * 2021-06-01 2022-12-06 长鑫存储技术有限公司 存储器
JP2022184976A (ja) * 2010-08-06 2022-12-13 株式会社半導体エネルギー研究所 半導体装置
JP2023156397A (ja) * 2012-02-29 2023-10-24 株式会社半導体エネルギー研究所 半導体装置
WO2024194726A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置、及び、半導体装置の作製方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321228A (ja) * 1994-05-26 1995-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH11126491A (ja) * 1997-08-20 1999-05-11 Fujitsu Ltd 半導体記憶装置
JP2000269358A (ja) * 1999-03-17 2000-09-29 Hitachi Ltd 半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321228A (ja) * 1994-05-26 1995-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH11126491A (ja) * 1997-08-20 1999-05-11 Fujitsu Ltd 半導体記憶装置
JP2000269358A (ja) * 1999-03-17 2000-09-29 Hitachi Ltd 半導体装置およびその製造方法

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042172A (ja) * 2005-08-01 2007-02-15 Sony Corp 半導体メモリ装置
JP7470754B2 (ja) 2010-08-06 2024-04-18 株式会社半導体エネルギー研究所 半導体装置
JP2022184976A (ja) * 2010-08-06 2022-12-13 株式会社半導体エネルギー研究所 半導体装置
JP2012256818A (ja) * 2010-08-16 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9627386B2 (en) 2011-03-18 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9385128B2 (en) 2011-03-18 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
JP2012212499A (ja) * 2011-03-18 2012-11-01 Semiconductor Energy Lab Co Ltd 記憶装置及び電子機器
JP7637730B2 (ja) 2012-02-29 2025-02-28 株式会社半導体エネルギー研究所 半導体装置
JP7657266B2 (ja) 2012-02-29 2025-04-04 株式会社半導体エネルギー研究所 半導体装置
US12382723B2 (en) 2012-02-29 2025-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2023156396A (ja) * 2012-02-29 2023-10-24 株式会社半導体エネルギー研究所 半導体装置
JP2023156397A (ja) * 2012-02-29 2023-10-24 株式会社半導体エネルギー研究所 半導体装置
US10170630B2 (en) 2012-03-05 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor memory device
JP2021121027A (ja) * 2012-03-05 2021-08-19 株式会社半導体エネルギー研究所 半導体装置
JP7360416B2 (ja) 2012-03-05 2023-10-12 株式会社半導体エネルギー研究所 半導体装置
JP2018133581A (ja) * 2012-03-05 2018-08-23 株式会社半導体エネルギー研究所 半導体記憶装置
JP2017126763A (ja) * 2012-03-05 2017-07-20 株式会社半導体エネルギー研究所 半導体記憶装置
JP2024177410A (ja) * 2012-03-05 2024-12-19 株式会社半導体エネルギー研究所 半導体記憶装置
US8941173B2 (en) 2012-03-22 2015-01-27 Samsung Electronics Co., Ltd. Capacitorless memory device
US8809930B2 (en) 2012-03-28 2014-08-19 Samsung Electronics Co., Ltd. Semiconductor memory devices
CN103367369A (zh) * 2012-03-28 2013-10-23 三星电子株式会社 半导体存储器件
WO2013146039A1 (ja) * 2012-03-30 2013-10-03 シャープ株式会社 半導体記憶装置
CN115440265A (zh) * 2021-06-01 2022-12-06 长鑫存储技术有限公司 存储器
CN115440265B (zh) * 2021-06-01 2024-05-17 长鑫存储技术有限公司 存储器
WO2024194726A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置、及び、半導体装置の作製方法

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