JP2007214587A - 半導体アセンブリ - Google Patents
半導体アセンブリ Download PDFInfo
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- JP2007214587A JP2007214587A JP2007102648A JP2007102648A JP2007214587A JP 2007214587 A JP2007214587 A JP 2007214587A JP 2007102648 A JP2007102648 A JP 2007102648A JP 2007102648 A JP2007102648 A JP 2007102648A JP 2007214587 A JP2007214587 A JP 2007214587A
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Abstract
【解決手段】熱応力吸収インターフェイス構造体20は、第1端部32、第2端部34及び側部を有する伸長形状の導電性バンプパッド30を備えている。熱サイクリングの際、第2端部34が下降運動をすると第1端部32が上昇運動をし、第2端部34が上昇運動をすると第1端部32が下降運動をする。これにより、熱サイクリング時に発生する応力による上下運動が吸収され、応力の発生を吸収または開放することができる。
【選択図】図1
Description
しかしながら、印刷回路基板と半導体チップの熱膨張係数が大きく異なるため、もし弾性がほとんどない金属半田ボールだけを使用して半導体チップを基板と接続すると、ストレイン(strain)が半田ボールに吸収されて、印刷回路基板に対するチップの熱膨張係数の差異による機械的ストレスが半田ボールのクラックや不良を引き起こすおそれがあり、半田接続部の信頼性が低下する。
その結果、従来の構造では、半田ボールパッドの側部、特にチップの縁部において金属接続部の断線や半田クラックを防止することが足りないことを経験的に知ることになった。
本発明の一様態によると、半導体集積回路チップと表面実装型構造体との間の熱応力吸収インタフェース構造体は、第1長手型端部、第2長手型端部及び側部を有する伸長形状の導電性バンプパッドを備えている。前記熱応力吸収インタフェース構造体は、熱サイクリングの際、前記第2長手型端部が下降運動をする時、前記第1長手型端部が上昇運動をするようにし、前記第2長手型端部が上昇運動をする時、前記第1長手側端部が下降運動をするようにする移動手段を含む。前記移動手段は中心軸を有し、上下の運動は中心軸を中心に対称である。前記熱応力吸収インタフェース構造体は、パッド上に形成された導電性バンプパッドを含んでいる。
以下、本発明を完全に理解することができるように、いろいろの具体例により説明する。しかしながら、本発明が属する技術分野において通常の知識を有する者なら、具体例によらずに本発明を実施することができる。下記の例で、既に知られた工程段階と、素子の構造及び技術については詳細な説明をしない。同一の図面符号は、図面の同一又は対応要素を示す。
多層構造体20の少なくとも2つの層は、互いに異なる弾性係数を有することが好ましい。例えば、第1ポリマー層26は、弾性係数が約5〜200MPaの材料より構成され、第2ポリマー層28は、弾性係数が約1〜20GPaの材料より構成される。第1ポリマー層は、弾性体又は低弾性係数ポリマーであり、この弾性体は、ポリシロキサン又はその等価物である。
図2を参照すると、熱応力吸収インタフェース構造体20は、伸長形状の導電性バンプパッド30と側部36とを含み、バンプパッド30は第1長手型端部32(以下、第1端部)と、第2長手型端部34(以下、第2端部)を有する。導電性バンプ21は、楕円型又はこれと類似な形態の伸長形状のバンプパッド30上に形成される。伸長形状のバンプパッド30は、側部36から延設する接続線38をさらに含む。接続線38は、第1端部32と第2端部34の中間に中心軸25に沿って配置される。ここで、第1ポリマー層とパッドの面積比は、約1.1:1.0である。この比を1:1にすると、製造工程を簡単にすることができるので、好ましい。
本発明の好ましい実施例によると、上述した第1端部32と第2端部34の間に配置される接続線38を含むインタフェース構造体20(以下、多層構造体)と、第1ポリマー層26及び第2ポリマー層28は、接続線が延設する前記中心軸25を中心に前記伸長形状のバンプパッド30が上下運動をするようにする。また、このようなインタフェース構造体により、第1ポリマー26、第2ポリマー28は、熱サイクリング際に、前記伸長形状のバンプパッド30の中心軸25に対する上下運動に対応してこれを収容するように弾性変形する。
これにより、本発明が属する技術分野において通常の知識を有する者は、中心軸を軸にしてバンプパッド30を上下運動させ、且つ導電性バンプ21を表面実装型構造体24に対して、接合部を破壊することなく、ほぼ垂直関係を維持するため、略プレーナ状多層構造体20の代わりに他の手段を本発明に適用することができることがわかるだろう。
図5に示すように、半導体ウェーハ40上に、従来の技術を利用して複数の半導体チップパッド54を露出させるパッシベーション層パターン52を形成する。パッシベーション層パターンは、窒化シリコンのような通常の材料より形成することができる。
次いで、図11及び図12に示すように、第1ポリマー層26と第2ポリマー層28とよりなる多層構造体27上に、第1導電性パターン層102を形成して、信号線29と導電性バンプバッド30を形成する。
本実施例において、多層構造体27の第1ポリマー層26は、図9に示すように、物理的に互いに分離されていて、各々の多層構造体27が個別的に変形されて該当パッドの運動を収容しながらも、互いに干渉しない。
図4から図14では、再配線金属化のため、第2導電性パターン層72を形成することについて説明したが、必要な場合、このような第2導電性パターン層72を形成しなくても実現することができる。
本発明により製造された熱応力吸収インタフェース構造体を有するウェーハレベルパッケージは、上述したように、接続部の信頼性が非常に改善される。また、本発明によるインタフェース構造体は、ウェーハレベルパッケージを回路基板に実装する時や長期間使用時に、いろいろの接合部に加えられる熱応力のような各種ストレスを吸収するか放出する。従って、ウェーハレベルパッケージの寿命が増え、このようなウェーハレベルパッケージを使用する電子製品、例えば携帯電話の寿命も延長する。
Claims (15)
- 複数のチップパッド及びパッシベーション層を含む半導体集積回路チップと、
第1長手型端部及び第2長手型端部を各々有する複数の伸長形状の導電性のバンプパッドと、
前記バンプパッドの下部に各々配置され中心軸を有する複数の多層熱応力吸収構造体とを備え、
前記バンプパッドは、それぞれ前記第1長手型端部と前記第2長手型端部との間で側部から延設され前記チップに電気的に連結されている接続部を有することを特徴とする半導体アセンブリ。 - 前記バンプパッドの上に導電性バンプをさらに備え、前記導電性バンプは表面実装型構造体の上に実装されていることを特徴とする請求項1に記載の半導体アセンブリ。
- 前記多層熱応力吸収構造体は、それぞれ第1ポリマー層と前記第1ポリマー層を覆う第2ポリマー層とを有することを特徴とする請求項1に記載の半導体アセンブリ。
- 前記接続線を含むパッド、前記第1ポリマー層および前記第2ポリマー層は、互いに協同して、熱サイクリングの際、前記パッドの第2長手型端部が下降運動するとき前記第1長手型端部は上昇移動され、前記第2長手型端部が上昇運動するとき前記第2長手型端部は下降移動され、前記第1ポリマー層および前記第2ポリマー層は弾性変形することにより熱サイクリングによる前記パッドの上下運動が吸収され、熱サイクリング時に発生する熱応力が吸収されることを特徴とする請求項3に記載の半導体アセンブリ。
- 前記多層熱応力吸収構造体は、対応するパッドの運動を干渉することなく吸収するように、物理的に互いに分離され、互いに個別的に変形することを特徴とする請求項4に記載の半導体アセンブリ。
- 前記パッドは、ほぼ放射状に配置されていることを特徴とする請求項1に記載の半導体アセンブリ。
- 前記多層熱応力吸収構造体の下部に配置されるメッシュパターンをさらに備えることを特徴とする請求項1に記載の半導体アセンブリ。
- 前記バンプパッドの上にはそれぞれ配置されるアンダバンプヤ金をさらに備えることを特徴とする請求項1に記載の半導体アセンブリ。
- 前記第1ポリマー層は、弾性体を有することを特徴とする請求項1に記載の半導体アセンブリ。
- 前記第2ポリマー層は、ポリイミド層を有することを特徴とする請求項1に記載の半導体アセンブリ。
- 前記第1ポリマー層は、ほぼ楕円形状に形成されることを特徴とする請求項1に記載の半導体アセンブリ。
- 前記バンプパッドは、平面形状が楕円形状であることを特徴とする請求項1に記載の半導体アセンブリ。
- ウェーハレベルパッケージであることを特徴とする請求項1に記載の半導体アセンブリ。
- 前記接続線を有する導電性バンプパッドは、Cr/Cu/Cu/Niからなることを特徴とする請求項1に記載の半導体アセンブリ。
- 前記バンプパッドは、厚さが1〜20μmであることを特徴とする請求項14に記載の半導体アセンブリ。
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US6518675B2 (en) * | 2000-12-29 | 2003-02-11 | Samsung Electronics Co., Ltd. | Wafer level package and method for manufacturing the same |
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- 2000-12-29 US US09/752,856 patent/US6518675B2/en not_active Expired - Lifetime
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2001
- 2001-03-28 KR KR10-2001-0016168A patent/KR100418600B1/ko not_active IP Right Cessation
- 2001-07-31 JP JP2001232252A patent/JP4346264B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-20 US US10/103,630 patent/US6586275B2/en not_active Expired - Lifetime
- 2002-11-25 US US10/304,264 patent/US6836018B2/en not_active Expired - Lifetime
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2007
- 2007-04-10 JP JP2007102648A patent/JP2007214587A/ja active Pending
- 2007-04-10 JP JP2007102653A patent/JP2007201500A/ja not_active Withdrawn
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JPS6038839A (ja) * | 1983-08-12 | 1985-02-28 | Hitachi Ltd | フリツプチツプ型半導体装置 |
JPH07321247A (ja) * | 1994-05-26 | 1995-12-08 | Hitachi Ltd | Bga型半導体装置とそれを実装する基板 |
WO1998032170A1 (fr) * | 1997-01-17 | 1998-07-23 | Seiko Epson Corporation | Composant electronique, dispositif a semiconducteur, procede de fabrication, carte imprimee et equipement electronique |
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WO2000077844A1 (en) * | 1999-06-15 | 2000-12-21 | Fujikura Ltd. | Semiconductor package, semiconductor device, electronic device, and method of manufacturing semiconductor package |
Also Published As
Publication number | Publication date |
---|---|
JP2002217227A (ja) | 2002-08-02 |
US20020100982A1 (en) | 2002-08-01 |
JP4346264B2 (ja) | 2009-10-21 |
US6586275B2 (en) | 2003-07-01 |
US20030102560A1 (en) | 2003-06-05 |
US6518675B2 (en) | 2003-02-11 |
JP2007201500A (ja) | 2007-08-09 |
KR100418600B1 (ko) | 2004-02-11 |
US6836018B2 (en) | 2004-12-28 |
KR20020059211A (ko) | 2002-07-12 |
US20020084528A1 (en) | 2002-07-04 |
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