JP7078821B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP7078821B2 JP7078821B2 JP2017089871A JP2017089871A JP7078821B2 JP 7078821 B2 JP7078821 B2 JP 7078821B2 JP 2017089871 A JP2017089871 A JP 2017089871A JP 2017089871 A JP2017089871 A JP 2017089871A JP 7078821 B2 JP7078821 B2 JP 7078821B2
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- Prior art keywords
- solid
- side wall
- bumps
- wall portion
- lands
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
本発明の実施の形態に係る固体撮像装置は、図2に示すように、固体検出器Pijをm×nの2次元マトリクス状に配列した検出器基板50と、検出器基板50のマトリクスに対応して、それぞれの固体検出器Pijからの信号を読み出す信号読出回路をm×nの2次元マトリクス状に配列した信号回路基板10とを、互いに対向させた積層構造をなしている。なお固体検出器Pijの詳細は図9及び図10を参照して後述する。m×nの2次元マトリクスに配列した固体検出器Pijの配列は、イメージセンサ(固体撮像装置)の画素の配置に対応している。信号回路基板10の信号読出回路のそれぞれは、スイッチング素子Qijやバッファ増幅器の回路を備え、m×nの2次元マトリクスに配列された画素のそれぞれにおける信号を読み出す。
SS∝(CA-CB)×L×ΔT …(1)
θ=tan-1{(Yj-Y0)/(Xi-X0)} …(2)
図11~図19を参照して、本発明の実施の形態に係る固体撮像装置が備える筒状バンプXijの製造方法について説明する。なお、図11~図19において1つの筒状バンプXijを拡大して示すが、実際は、例えば図1に示すように複数の第2ランド21の各上面に複数の筒状バンプXijが一括して形成される。また、図12及び図13、図15及び図16、並びに図18及び図19の断面図において、簡略化のため中間層配線22及び下層配線23の図示を省略しているが、実際は、例えば図2に示すように中間層配線22及び下層配線23が回路内蔵絶縁層12に予め埋め込まれている。
上記のように、本発明の実施形態を記載したが、この開示の一部をなす論述及び図面は本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
13 第2主面
21 第2ランド
41 底部
42 側壁部
50 検出器基板
51 共通電極
52 アレイ・チップ
53 第1主面
61 第1ランド
Xij 筒状バンプ
Claims (7)
- マトリクス状に複数の固体検出器を配列し、前記複数の固体検出器の一方の電極が露出する第1主面に、前記複数の固体検出器の配列に対応して、複数の第1ランドを前記マトリクス状に配列した検出器基板と、
前記第1主面に平行に対向し、平面パターンとして前記第1主面の中心に一致する中心を有する第2主面に、前記複数の第1ランドにそれぞれ対応して配列された複数の第2ランドを有し、前記複数の固体検出器からのそれぞれの信号を読み出す信号読出回路のそれぞれを、前記マトリクス状に配列した信号回路基板と、
長手方向に沿う側壁部と前記長手方向に直交する短手方向に沿う側壁部でそれぞれが囲まれ、且つ前記複数の第1ランド及び前記複数の第2ランドのそれぞれの間に挟まれた複数の筒状バンプと、
を備え、前記平面パターンにおいて、前記中心に向かう複数の放射状の線のうちの特定の傾斜角の線の上に、それぞれの前記長手方向に沿う側壁部の方向を合わせた複数の筒状バンプが順に配列され、前記特定の傾斜角の線以外の他の放射状の線上においては、前記長手方向に沿う側壁部の方向が前記特定の傾斜角と異なる複数の筒状バンプが順に配列された配列パターンが含まれ、前記複数の筒状バンプのそれぞれは、第2ランドに接合される一端及び前記第1ランドに接合される他端を有する筒状の側壁部を有し、前記長手方向に沿う前記側壁部の厚さは、前記短手方向に沿う前記側壁部の厚さより薄いことを特徴とする固体撮像装置。 - 前記複数の筒状バンプの配列は、前記複数の放射状の線のうちの一部をなす複数の放射状の線によって複数の領域に分割され、
前記複数の領域のそれぞれにおいて、前記複数の領域のそれぞれの中心線となる、前記中心に向かう特定の放射状の線の上に、それぞれの前記長手方向を合わせた複数の筒状バンプが線状に配列されていることを特徴とする請求項1に記載の固体撮像装置。 - マトリクス状に複数の固体検出器を配列し、前記複数の固体検出器の一方の電極が露出する第1主面に、前記複数の固体検出器の配列に対応して、複数の第1ランドを前記マトリクス状に配列した検出器基板と、
前記第1主面に平行に対向し、平面パターンとして前記第1主面の中心に一致する中心を有する第2主面に、前記複数の第1ランドにそれぞれ対応して配列された複数の第2ランドを有し、前記複数の固体検出器からのそれぞれの信号を読み出す信号読出回路のそれぞれを、前記マトリクス状に配列した信号回路基板と、
それぞれの上端及び下端が、対応する前記複数の第1ランドのいずれか及び前記複数の第2ランドのいずれかに直接接合し、且つ長手方向に沿う側壁部と前記長手方向に直交する短手方向に沿う側壁部で囲まれ、前記長手方向に沿う前記側壁部の厚さが前記短手方向に沿う前記側壁部の厚さより薄い複数の筒状バンプと、
を備え、前記複数の筒状バンプの配列は、前記中心に向かう複数の放射状の線のうちの一部をなす複数の放射状の線によって複数の領域に分割され、前記複数の領域のそれぞれにおいて、前記複数の領域のそれぞれの中心線となる、前記中心に向かう特定の放射状の線の上に、それぞれの前記長手方向を合わせた複数の筒状バンプが線状に配列され、
前記複数の領域のそれぞれにおいて、それぞれの領域に属する他の筒状バンプが、前記特定の放射状の線の上の前記筒状バンプの傾斜角と同一の傾斜角で配列されていることを特徴とする固体撮像装置。 - 前記平面パターンとして、前記複数の筒状バンプが前記複数の放射状の線の上にそれぞれの前記長手方向を合わせて、前記マトリクス状に配列されていることを特徴とする請求項1に記載の固体撮像装置。
- 前記特定の放射状の線の上において、前記複数の筒状バンプのそれぞれの前記長手方向は、前記信号回路基板及び前記検出器基板の間の熱膨張係数の差に起因する熱応力の方向に沿うことを特徴とする請求項1~4のいずれか1項に記載の固体撮像装置。
- 前記側壁部は、前記一端から前記他端に向かうほど減少する内径及び外径を有することを特徴とする請求項1に記載の固体撮像装置。
- 前記側壁部は、前記他端において最も薄い厚さを有することを特徴とする請求項6に記載の固体撮像装置。
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000228423A (ja) | 1999-02-05 | 2000-08-15 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2002217227A (ja) | 2000-12-29 | 2002-08-02 | Samsung Electronics Co Ltd | 熱応力吸収インタフェース構造体とこれを用いたウェーハレベルパッケージ及びその製造方法 |
JP2005019429A (ja) | 2003-06-23 | 2005-01-20 | Seiko Epson Corp | 半導体チップの接続方法、半導体チップ |
JP2008130992A (ja) | 2006-11-24 | 2008-06-05 | Fujitsu Ltd | 実装構造体とその製造方法および半導体装置とその製造方法 |
US20080142964A1 (en) | 2006-12-13 | 2008-06-19 | Haixiao Sun | Tubular-shaped bumps for integrated circuit devices and methods of fabrication |
US20090045508A1 (en) | 2007-08-13 | 2009-02-19 | Broadcom Corporation | Oblong peripheral solder ball pads on a printed circuit board for mounting a ball grid array package |
JP2012038766A (ja) | 2010-08-03 | 2012-02-23 | Sumitomo Electric Ind Ltd | 検出装置、受光素子アレイ、半導体チップ、これらの製造方法、および光学センサ装置 |
WO2014064837A1 (ja) | 2012-10-26 | 2014-05-01 | オリンパス株式会社 | 固体撮像装置、撮像装置および信号読み出し方法 |
US20150366049A1 (en) | 2014-06-17 | 2015-12-17 | Samsung Display Co., Ltd. | Array substrate and method of mounting integrated circuit using the same |
US20160043051A1 (en) | 2014-08-08 | 2016-02-11 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method of the same |
US20160086902A1 (en) | 2014-09-24 | 2016-03-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package structure and manufacturing method thereof |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6038839A (ja) * | 1983-08-12 | 1985-02-28 | Hitachi Ltd | フリツプチツプ型半導体装置 |
JPS63289844A (ja) * | 1987-05-21 | 1988-11-28 | Fuji Electric Co Ltd | 半導体装置のバンプ電極 |
JP2775965B2 (ja) * | 1990-03-12 | 1998-07-16 | 株式会社デンソー | バンプ付きリードの接合方法 |
JPH07115096A (ja) * | 1993-10-18 | 1995-05-02 | Fujitsu Ltd | バンプ電極 |
JPH07307410A (ja) * | 1994-05-16 | 1995-11-21 | Hitachi Ltd | 半導体装置 |
JP3208470B2 (ja) * | 1994-05-26 | 2001-09-10 | 株式会社日立製作所 | Bga型半導体装置とそれを実装する基板 |
JPH08204166A (ja) * | 1995-01-23 | 1996-08-09 | Nippon Hoso Kyokai <Nhk> | 積層型固体撮像装置 |
JPH1131893A (ja) * | 1997-05-12 | 1999-02-02 | Murata Mfg Co Ltd | 電子部品の製造方法およびそれを用いた電子部品 |
JP3351355B2 (ja) * | 1998-09-29 | 2002-11-25 | 株式会社デンソー | 電子部品の実装構造 |
US6373139B1 (en) * | 1999-10-06 | 2002-04-16 | Motorola, Inc. | Layout for a ball grid array |
JP2005340674A (ja) * | 2004-05-28 | 2005-12-08 | Toshiba Corp | 半導体装置とその製造方法 |
JP5040746B2 (ja) * | 2008-03-14 | 2012-10-03 | 日本電気株式会社 | 電子部品及びその製造方法 |
TWI379391B (en) * | 2008-05-05 | 2012-12-11 | Siliconware Precision Industries Co Ltd | Electronic carrier board |
US8536458B1 (en) * | 2009-03-30 | 2013-09-17 | Amkor Technology, Inc. | Fine pitch copper pillar package and method |
JP2015165185A (ja) | 2012-07-04 | 2015-09-17 | 株式会社島津製作所 | 放射線二次元検出器 |
JP6392171B2 (ja) * | 2015-05-28 | 2018-09-19 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
JP6430658B2 (ja) | 2015-11-12 | 2018-11-28 | 株式会社島津製作所 | 半導体装置、半導体検出器並びにそれらの製造方法、半導体チップまたは基板 |
-
2017
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- 2017-12-22 US US15/851,898 patent/US10115695B1/en active Active
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Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000228423A (ja) | 1999-02-05 | 2000-08-15 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2002217227A (ja) | 2000-12-29 | 2002-08-02 | Samsung Electronics Co Ltd | 熱応力吸収インタフェース構造体とこれを用いたウェーハレベルパッケージ及びその製造方法 |
JP2005019429A (ja) | 2003-06-23 | 2005-01-20 | Seiko Epson Corp | 半導体チップの接続方法、半導体チップ |
JP2008130992A (ja) | 2006-11-24 | 2008-06-05 | Fujitsu Ltd | 実装構造体とその製造方法および半導体装置とその製造方法 |
US20080142964A1 (en) | 2006-12-13 | 2008-06-19 | Haixiao Sun | Tubular-shaped bumps for integrated circuit devices and methods of fabrication |
US20090045508A1 (en) | 2007-08-13 | 2009-02-19 | Broadcom Corporation | Oblong peripheral solder ball pads on a printed circuit board for mounting a ball grid array package |
JP2012038766A (ja) | 2010-08-03 | 2012-02-23 | Sumitomo Electric Ind Ltd | 検出装置、受光素子アレイ、半導体チップ、これらの製造方法、および光学センサ装置 |
WO2014064837A1 (ja) | 2012-10-26 | 2014-05-01 | オリンパス株式会社 | 固体撮像装置、撮像装置および信号読み出し方法 |
US20150366049A1 (en) | 2014-06-17 | 2015-12-17 | Samsung Display Co., Ltd. | Array substrate and method of mounting integrated circuit using the same |
US20160043051A1 (en) | 2014-08-08 | 2016-02-11 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method of the same |
US20160086902A1 (en) | 2014-09-24 | 2016-03-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package structure and manufacturing method thereof |
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US10115695B1 (en) | 2018-10-30 |
US20180315727A1 (en) | 2018-11-01 |
EP3396715B1 (en) | 2019-12-11 |
JP2018190775A (ja) | 2018-11-29 |
EP3396715A1 (en) | 2018-10-31 |
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