JP6544440B2 - 半導体検出器 - Google Patents
半導体検出器 Download PDFInfo
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- JP6544440B2 JP6544440B2 JP2017551472A JP2017551472A JP6544440B2 JP 6544440 B2 JP6544440 B2 JP 6544440B2 JP 2017551472 A JP2017551472 A JP 2017551472A JP 2017551472 A JP2017551472 A JP 2017551472A JP 6544440 B2 JP6544440 B2 JP 6544440B2
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- 239000004065 semiconductor Substances 0.000 title claims description 145
- 239000010931 gold Substances 0.000 claims description 116
- 239000000463 material Substances 0.000 claims description 90
- 239000000758 substrate Substances 0.000 claims description 65
- 238000006243 chemical reaction Methods 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000010936 titanium Substances 0.000 claims description 42
- 238000009792 diffusion process Methods 0.000 claims description 38
- 230000005855 radiation Effects 0.000 claims description 36
- 229910004613 CdTe Inorganic materials 0.000 claims description 26
- 229910052737 gold Inorganic materials 0.000 claims description 22
- 239000011651 chromium Substances 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910007709 ZnTe Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 75
- 239000013078 crystal Substances 0.000 description 23
- 239000007772 electrode material Substances 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- RYZCLUQMCYZBJQ-UHFFFAOYSA-H lead(2+);dicarbonate;dihydroxide Chemical group [OH-].[OH-].[Pb+2].[Pb+2].[Pb+2].[O-]C([O-])=O.[O-]C([O-])=O RYZCLUQMCYZBJQ-UHFFFAOYSA-H 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
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- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- H01L27/144—Devices controlled by radiation
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Description
すなわち、この発明に係る半導体検出器(前者)は、光または放射線を検出する光電変換半導体層を有し、複数の画素電極が形成された一方の半導体チップまたは基板と、各々の前記画素電極に対向した位置に対向画素電極が形成され、前記光電変換半導体層で検出されて得られた信号を読み出す他方の半導体チップまたは基板と、前記画素電極および前記対向画素電極のいずれかに形成されたバンプ電極とを備え、前記対向画素電極と前記画素電極上のバンプ電極とが互いに機械的・電気的に接続された構造、あるいは前記画素電極と前記対向画素電極上のバンプ電極とが互いに機械的・電気的に接続された構造を有し、前記光電変換半導体層に接触する電極の材料が光電変換半導体層に対してショットキー機能を有すると共に、前記光電変換半導体層にAl(アルミニウム)が接して形成された場合にAlがショットキー機能を有するように、前記光電変換半導体層が構成され、当該ショットキー機能を有した電極に形成された最表面の電極の材料と当該ショットキー機能を有した電極の材料とにおける相互拡散係数が、前記最表面の電極の材料とAlとにおける相互拡散係数よりも小さくなるように、ショットキー機能を有した電極が形成され、ショットキー機能を有した電極および最表面の電極の積層構造により前記画素電極が形成されるものである。
また、前者とは別の発明に係る半導体検出器(後者)によれば、ショットキー機能を有した電極,中間の金属層からなる電極,最表面の電極の順に積層形成されている。そして、当該最表面の電極の材料と中間の金属層からなる電極の材料とにおける相互拡散係数が、最表面の電極の材料とショットキー機能を有した電極の材料とにおける相互拡散係数よりも小さくなるように、各電極が形成されている。したがって、最表面の電極の材料がショットキー機能を有した電極中に拡散することなくショットキー機能を維持しつつ、ショットキー機能を有した電極の材料が最表面の電極中に拡散することなく最表面の電極の合金化を防止することができる。また、光電変換半導体層に接触する電極の材料に中間の金属層よりも光電変換半導体とのショットキーバリア障壁の高い材料を用いることにより、機械的強度・信頼性が高く、さらに低リークの接合が得られる。
表1に作製評価試料の電極構造および熱処理条件を示す。試料として、Si基板にAl,Auを順次に成膜したもの(表1では「Au/Al/Si」で表記)、Si基板にAl,Ti,Auを順次に成膜したもの(表1では「Au/Ti/Al/Si」で表記)、Si基板にIn,Ti,Auを順次に成膜したもの(表1では「Au/Ti/In/Si」で表記)、Si基板にIn,Ni,Auを順次に成膜したもの(表1では「Au/Ni/In/Si」で表記)の4種類を準備している。
11 共通電極
13 … 光電変換半導体層
15 … 画素電極
15a … 最表面の電極
15b … 中間の金属層からなる電極
15c … ショットキー機能を有した電極(ショットキー電極)
2 … 対向基板
21 … 対向画素電極
22 … 画素容量
23 … スイッチングトランジスタ
24 … 走査線
25 … 信号読出線
3 … バンプ電極
31 … 層間絶縁膜
32 … 封止材料
101 … 信号読出し基板
102 … 半導体チップ
103 … 画素電極
104 … 導電性バンプ
105 … 絶縁層
Claims (10)
- 光または放射線を検出する光電変換半導体層を有し、複数の画素電極が形成された一方の半導体チップまたは基板と、
各々の前記画素電極に対向した位置に対向画素電極が形成され、前記光電変換半導体層で検出されて得られた信号を読み出す他方の半導体チップまたは基板と、
前記画素電極および前記対向画素電極のいずれかに形成されたバンプ電極とを備え、
前記対向画素電極と前記画素電極上のバンプ電極とが互いに機械的・電気的に接続された構造、あるいは前記画素電極と前記対向画素電極上のバンプ電極とが互いに機械的・電気的に接続された構造を有し、
前記光電変換半導体層に接触する電極の材料が光電変換半導体層に対してショットキー機能を有すると共に、前記光電変換半導体層にAl(アルミニウム)が接して形成された場合にAlがショットキー機能を有するように、前記光電変換半導体層が構成され、
当該ショットキー機能を有した電極に形成された最表面の電極の材料と当該ショットキー機能を有した電極の材料とにおける相互拡散係数が、前記最表面の電極の材料とAlとにおける相互拡散係数よりも小さくなるように、ショットキー機能を有した電極が形成され、
ショットキー機能を有した電極および最表面の電極の積層構造により前記画素電極が形成される、半導体検出器。 - 光または放射線を検出する光電変換半導体層を有し、複数の画素電極が形成された一方の半導体チップまたは基板と、
各々の前記画素電極に対向した位置に対向画素電極が形成され、前記光電変換半導体層で検出されて得られた信号を読み出す他方の半導体チップまたは基板と、
前記画素電極および前記対向画素電極のいずれかに形成されたバンプ電極とを備え、
前記対向画素電極と前記画素電極上のバンプ電極とが互いに機械的・電気的に接続された構造、あるいは前記画素電極と前記対向画素電極上のバンプ電極とが互いに機械的・電気的に接続された構造を有し、
前記光電変換半導体層に接触する電極の材料が光電変換半導体層に対してショットキー機能を有し、
当該ショットキー機能を有した電極、中間の金属層からなる電極、および最表面の電極の順に積層形成されて前記画素電極が形成され、
当該最表面の電極の材料と前記中間の金属層からなる電極の材料とにおける相互拡散係数が、前記最表面の電極の材料と前記ショットキー機能を有した電極の材料とにおける相互拡散係数よりも小さい、
半導体検出器。 - 請求項1または2に記載の半導体検出器において、
前記最表面の電極および前記バンプ電極が同一の材料で形成される、半導体検出器。 - 請求項1に記載の半導体検出器において、
前記ショットキー機能を有した電極が、Ti(チタン),Cr(クロム)のいずれかを含む、半導体検出器。 - 請求項2に記載の半導体検出器において、
前記中間の金属層からなる電極が、Ti(チタン),Ni(ニッケル),Cr(クロム)のいずれかを含む、半導体検出器。 - 請求項2または請求項5に記載の半導体検出器において、
前記ショットキー機能を有した電極が、Al(アルミニウム)である、半導体検出器。 - 請求項1または請求項2に記載の半導体検出器において、
前記最表面の電極が、Au(金),Cu(銅)のいずれかである、半導体検出器。 - 請求項7に記載の半導体検出器において、
前記バンプ電極が、前記最表面の電極と同一の材料であるAu(金),Cu(銅)のいずれかである、半導体検出器。 - 請求項1または請求項2に記載の半導体検出器において、前記光電変換半導体層がCdTe、ZnTe、CdZnTe、GaAsのいずれかである、半導体検出器。
- 請求項1または請求項2に記載の半導体検出器において、光または放射線を検出する光電変換半導体層を有した一方の半導体チップまたは基板の導電性がP型または真性である、半導体検出器。
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JPH0983008A (ja) * | 1995-09-12 | 1997-03-28 | Shimadzu Corp | 半導体放射線検出素子 |
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