JP2007200936A - 薄膜トランジスタ及びその製造方法並びに液晶表示装置 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims abstract description 117
- 239000012535 impurity Substances 0.000 claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 29
- 229920005591 polysilicon Polymers 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000013081 microcrystal Substances 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 32
- 229910052751 metal Inorganic materials 0.000 abstract description 22
- 239000002184 metal Substances 0.000 abstract description 22
- 230000008569 process Effects 0.000 abstract description 21
- 238000005468 ion implantation Methods 0.000 abstract description 7
- 238000000059 patterning Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 12
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- XGXDPENSUQBIDF-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[Ce].[O-][N+]([O-])=O XGXDPENSUQBIDF-UHFFFAOYSA-O 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- Microelectronics & Electronic Packaging (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
【解決手段】 絶縁基板上に下地絶縁膜11を堆積する。次に、シリコン薄膜を堆積し、レーザアニール法によりポリシリコン薄膜12を形成する。ポリシリコン薄膜12をアイランド化してゲート絶縁膜13を堆積する。次に下層ゲート電極としてマイクロクリスタルシリコン薄膜14を堆積した後、上層ゲート電極として金属膜15を続けて堆積する。これらをパターニングして多層ゲート電極を形成するとき、下層ゲート電極を上層ゲート電極よりも大きく形成する。その後、イオン注入法等によりゲート絶縁膜13を介してポリシリコン薄膜12に選択的に不純物を導入するとLDD領域19とソース・ドレイン領域18が同時に形成される。その後、上層ゲート電極をマスクとして、下層ゲート電極が露出した部位をエッチングすることにより、目的のTFT10を得る。
【選択図】 図1
Description
11 下地絶縁膜
12 ポリシリコン薄膜
13 ゲート絶縁膜
14 マイクロクリスタルシリコン薄膜(下層ゲート電極)
15 金属膜(上層ゲート電極)
16,17 フォトレジスト膜
18 ソース・ドレイン領域
19 LDD領域
30 LCD
Claims (9)
- 絶縁性基板上に形成された非結晶半導体薄膜と、この非結晶半導体薄膜上に形成されたゲート絶縁膜と、このゲート絶縁膜上に形成された下層ゲート電極及び上層ゲート電極からなるゲート電極と、前記非結晶半導体薄膜に形成された高濃度不純物導入領域及び低濃度不純物導入領域からなるLDD構造と、を備えた薄膜トランジスタにおいて、
前記低濃度不純物導入領域と前記高濃度不純物導入領域との不純物濃度差は、前記下層ゲート電極によって導入を阻止された不純物の濃度に相当し、
前記低濃度不純物導入領域上に前記ゲート電極が存在しない、
ことを特徴とする薄膜トランジスタ。 - 前記非結晶半導体薄膜がポリシリコン薄膜である、
ことを特徴とする請求項1記載の薄膜トランジスタ。
- 絶縁性基板上に非結晶半導体薄膜を形成する第一工程と、
この非結晶半導体薄膜上にゲート絶縁膜を形成する第二工程と、
このゲート絶縁膜上に、幅の広い下層ゲート電極と幅の狭い上層ゲート電極とからなるゲート電極を形成する第三工程と、
前記ゲート電極及び前記ゲート絶縁膜を通して前記非結晶半導体薄膜に不純物を導入することにより、前記非結晶半導体薄膜にソース・ドレイン領域及びLDD領域を同時に形成する第四工程と、
前記上層ゲート電極をマスクとして前記下層ゲート電極をエッチングして除去する第五工程と、
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記第三工程は、
前記ゲート絶縁膜上に複数層からなる導電膜を形成する工程と、
これらの導電膜を選択的にエッチングすることによって前記ゲート電極を形成する工程と、
を含むことを特徴とする請求項3記載の薄膜トランジスタの製造方法。 - 前記第三工程は、
前記ゲート絶縁膜上に複数層からなる導電膜を形成する工程と、
この導電膜の最上層上にフォトレジスト膜を選択的に形成する工程と、
前記フォトレジスト膜をマスクとして、前記導電膜に等方性エッチングを施すことにより前記上層ゲート電極を形成するとともに、前記導電膜に異方性エッチングを施すことにより前記下層ゲート電極を形成する工程と、
を含むことを特徴とする請求項3記載の薄膜トランジスタの製造方法。 - 前記等方性エッチングはウェットエッチングである、
ことを特徴とする請求項5記載の薄膜トランジスタの製造方法。 - 前記ゲート絶縁膜が二酸化シリコン薄膜であり、
前記複数層からなる導電膜が下層のマイクロクリスタルシリコン薄膜と上層のクロム薄膜とであり、
前記ウェットエッチングのエッチャントが硝酸二セリウムアンモニウム及び過塩素酸の水溶液である、
ことを特徴とする請求項6記載の薄膜トランジスタの製造方法。 - 前記非結晶半導体薄膜がポリシリコン薄膜である、
ことを特徴とする請求項3乃至7のいずれか1項に記載の薄膜トランジスタの製造方法。
- 請求項1又は2記載の薄膜トランジスタが形成された前記絶縁性基板と、この絶縁性基板と対向基板とによって挟持された液晶素子と、この液晶素子を前記薄膜トランジスタを介して駆動する駆動回路と、
を備えたことを特徴とする液晶表示装置。
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JP2006014272A JP2007200936A (ja) | 2006-01-23 | 2006-01-23 | 薄膜トランジスタ及びその製造方法並びに液晶表示装置 |
US11/625,214 US7618881B2 (en) | 2006-01-23 | 2007-01-19 | Thin-film transistor and manufacturing method thereof |
CN200710004095.4A CN101009331B (zh) | 2006-01-23 | 2007-01-23 | 薄膜晶体管及其制造方法 |
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JP2006014272A JP2007200936A (ja) | 2006-01-23 | 2006-01-23 | 薄膜トランジスタ及びその製造方法並びに液晶表示装置 |
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US11177388B2 (en) | 2019-02-12 | 2021-11-16 | Japan Display Inc. | Semiconductor device and method of manufacturing semiconductor device |
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CN115458608A (zh) * | 2022-09-30 | 2022-12-09 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管及其制备方法、阵列基板 |
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CN101009331A (zh) | 2007-08-01 |
US7618881B2 (en) | 2009-11-17 |
US20070170526A1 (en) | 2007-07-26 |
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