CN101009331B - 薄膜晶体管及其制造方法 - Google Patents
薄膜晶体管及其制造方法 Download PDFInfo
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- CN101009331B CN101009331B CN200710004095.4A CN200710004095A CN101009331B CN 101009331 B CN101009331 B CN 101009331B CN 200710004095 A CN200710004095 A CN 200710004095A CN 101009331 B CN101009331 B CN 101009331B
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- Prior art keywords
- gate electrode
- film
- ldd
- tft
- insulating film
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- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title description 37
- 239000010408 film Substances 0.000 claims abstract description 215
- 239000012535 impurity Substances 0.000 claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000012528 membrane Substances 0.000 claims description 63
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 49
- 229920005591 polysilicon Polymers 0.000 claims description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 239000010410 layer Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 210000002858 crystal cell Anatomy 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 17
- 239000000203 mixture Substances 0.000 description 17
- 229910052796 boron Inorganic materials 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 101100489577 Solanum lycopersicum TFT10 gene Proteins 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000003595 mist Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 3
- -1 boron ion Chemical class 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006014272A JP2007200936A (ja) | 2006-01-23 | 2006-01-23 | 薄膜トランジスタ及びその製造方法並びに液晶表示装置 |
JP2006014272 | 2006-01-23 | ||
JP2006-014272 | 2006-01-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101009331A CN101009331A (zh) | 2007-08-01 |
CN101009331B true CN101009331B (zh) | 2011-05-18 |
Family
ID=38284707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710004095.4A Active CN101009331B (zh) | 2006-01-23 | 2007-01-23 | 薄膜晶体管及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7618881B2 (zh) |
JP (1) | JP2007200936A (zh) |
CN (1) | CN101009331B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101827848B1 (ko) * | 2010-10-22 | 2018-03-23 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 구비한 표시 장치 |
CN103078002B (zh) * | 2012-12-28 | 2016-01-27 | 苏州阿特斯阳光电力科技有限公司 | 一种低表面浓度浅扩散结太阳电池的制备方法 |
CN103985716B (zh) | 2014-05-06 | 2018-03-27 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板制造方法及薄膜晶体管阵列基板 |
CN104465405B (zh) * | 2014-12-30 | 2017-09-22 | 京东方科技集团股份有限公司 | 薄膜晶体管的制作方法及阵列基板的制作方法 |
CN104916584A (zh) | 2015-04-30 | 2015-09-16 | 京东方科技集团股份有限公司 | 一种制作方法、阵列基板及显示装置 |
TW201704831A (zh) * | 2015-07-31 | 2017-02-01 | 凌巨科技股份有限公司 | 薄膜電晶體結構 |
CN105355588B (zh) * | 2015-09-30 | 2018-06-12 | 深圳市华星光电技术有限公司 | Tft阵列基板的制备方法、tft阵列基板及显示装置 |
CN106409683A (zh) * | 2016-11-07 | 2017-02-15 | 信利(惠州)智能显示有限公司 | Mos管及其制备方法 |
JP2020129635A (ja) | 2019-02-12 | 2020-08-27 | 株式会社ジャパンディスプレイ | 半導体装置および半導体装置の製造方法 |
CN112928153B (zh) * | 2019-12-05 | 2023-07-04 | 中芯国际集成电路制造(天津)有限公司 | 半导体结构及其形成方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58204570A (ja) | 1982-05-24 | 1983-11-29 | Seiko Epson Corp | 半導体集積回路装置の製造方法 |
JPH01125866A (ja) | 1987-11-10 | 1989-05-18 | Citizen Watch Co Ltd | 半導体集積回路の製造方法 |
JPH05152326A (ja) | 1991-12-02 | 1993-06-18 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
JPH07106582A (ja) | 1993-09-29 | 1995-04-21 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法 |
JP3086579B2 (ja) | 1993-12-28 | 2000-09-11 | シャープ株式会社 | 薄膜トランジスタの製造方法 |
JP3648808B2 (ja) | 1995-10-18 | 2005-05-18 | セイコーエプソン株式会社 | 薄膜半導体装置およびその製造方法 |
JP3282582B2 (ja) | 1998-04-21 | 2002-05-13 | 日本電気株式会社 | トップゲート型薄膜トランジスタ及びその製造方法 |
US6232208B1 (en) * | 1998-11-06 | 2001-05-15 | Advanced Micro Devices, Inc. | Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profile |
JP4354099B2 (ja) * | 2000-07-10 | 2009-10-28 | シャープ株式会社 | 薄膜トランジスタの製造方法 |
JP5259904B2 (ja) | 2001-10-03 | 2013-08-07 | ゴールドチャームリミテッド | 表示装置 |
US6773944B2 (en) * | 2001-11-07 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JP2005243938A (ja) * | 2004-02-26 | 2005-09-08 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
JP4304374B2 (ja) * | 2004-07-26 | 2009-07-29 | 日本電気株式会社 | トップゲート型薄膜トランジスタ |
-
2006
- 2006-01-23 JP JP2006014272A patent/JP2007200936A/ja active Pending
-
2007
- 2007-01-19 US US11/625,214 patent/US7618881B2/en active Active
- 2007-01-23 CN CN200710004095.4A patent/CN101009331B/zh active Active
Non-Patent Citations (2)
Title |
---|
JP特开2004-336073A 2004.11.25 |
JP特开平11-307777A 1999.11.05 |
Also Published As
Publication number | Publication date |
---|---|
US7618881B2 (en) | 2009-11-17 |
JP2007200936A (ja) | 2007-08-09 |
US20070170526A1 (en) | 2007-07-26 |
CN101009331A (zh) | 2007-08-01 |
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Address after: Tokyo, Japan Co-patentee after: NLT Technologies Ltd. Patentee after: NEC Corp. Address before: Tokyo, Japan Co-patentee before: NEC LCD Technologies, Ltd. Patentee before: NEC Corp. |
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