JP2007194668A5 - - Google Patents
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- Publication number
- JP2007194668A5 JP2007194668A5 JP2007104727A JP2007104727A JP2007194668A5 JP 2007194668 A5 JP2007194668 A5 JP 2007194668A5 JP 2007104727 A JP2007104727 A JP 2007104727A JP 2007104727 A JP2007104727 A JP 2007104727A JP 2007194668 A5 JP2007194668 A5 JP 2007194668A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- buffer chamber
- processing apparatus
- substrate processing
- gas introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 19
- 238000010438 heat treatment Methods 0.000 claims 5
- 230000003213 activating effect Effects 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007104727A JP4746581B2 (ja) | 2007-04-12 | 2007-04-12 | 基板処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007104727A JP4746581B2 (ja) | 2007-04-12 | 2007-04-12 | 基板処理装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002104011A Division JP3957549B2 (ja) | 2002-04-05 | 2002-04-05 | 基板処埋装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011086587A Division JP2011142347A (ja) | 2011-04-08 | 2011-04-08 | 基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007194668A JP2007194668A (ja) | 2007-08-02 |
| JP2007194668A5 true JP2007194668A5 (enExample) | 2008-11-20 |
| JP4746581B2 JP4746581B2 (ja) | 2011-08-10 |
Family
ID=38450050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007104727A Expired - Lifetime JP4746581B2 (ja) | 2007-04-12 | 2007-04-12 | 基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4746581B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101487408B1 (ko) * | 2013-07-09 | 2015-01-29 | 주식회사 엘지실트론 | 도펀트 반응 장치 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62159433A (ja) * | 1986-01-08 | 1987-07-15 | Hitachi Ltd | レジスト除去方法及び装置 |
| JP2752235B2 (ja) * | 1990-06-26 | 1998-05-18 | 株式会社東芝 | 半導体基板の製造方法 |
| JPH05251391A (ja) * | 1992-03-04 | 1993-09-28 | Tokyo Electron Tohoku Kk | 半導体ウエハーのプラズマ処理装置 |
| JP3225694B2 (ja) * | 1993-05-31 | 2001-11-05 | ソニー株式会社 | 窒化シリコン膜の形成方法およびｃｖｄ装置 |
| JPH11195647A (ja) * | 1997-12-26 | 1999-07-21 | Kokusai Electric Co Ltd | 薄膜形成装置及び反応副生成物除去方法 |
| JP2001284307A (ja) * | 2000-03-29 | 2001-10-12 | Ftl:Kk | 半導体の表面処理方法 |
| JP2001332546A (ja) * | 2000-05-24 | 2001-11-30 | Rohm Co Ltd | 酸化方法、シリコン酸化膜の製造方法および酸化装置 |
| JP3794243B2 (ja) * | 2000-05-31 | 2006-07-05 | 東京エレクトロン株式会社 | 酸化処理方法及びその装置 |
| JP3957549B2 (ja) * | 2002-04-05 | 2007-08-15 | 株式会社日立国際電気 | 基板処埋装置 |
-
2007
- 2007-04-12 JP JP2007104727A patent/JP4746581B2/ja not_active Expired - Lifetime