RU2014139815A - Способ и устройство для осаждения атомных слоев - Google Patents
Способ и устройство для осаждения атомных слоев Download PDFInfo
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- RU2014139815A RU2014139815A RU2014139815A RU2014139815A RU2014139815A RU 2014139815 A RU2014139815 A RU 2014139815A RU 2014139815 A RU2014139815 A RU 2014139815A RU 2014139815 A RU2014139815 A RU 2014139815A RU 2014139815 A RU2014139815 A RU 2014139815A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1. Способ, содержащий эксплуатацию реактора для осаждения атомных слоев, выполненного с возможностью осаждения материала на по меньшей мере одной подложке путем последовательных поверхностных реакций самонасыщения; и использование сухого воздуха в реакторе в качестве продувочного газа.2. Способ по п. 1, содержащий использование сухого воздуха в качестве несущего газа.3. Способ по п. 1 или 2, содержащий подачу сухого воздуха в реакционную камеру реактора в течение всей последовательности осаждения.4. Способ по п. 1 или 2, содержащий использование сухого воздуха при нагревании реакционной камеры реактора.5. Способ по п. 1 или 2, содержащий нагревание сухого воздуха после клапана подачи продувочного газа.6. Способ по п. 1 или 2, содержащий обеспечение обратного соединения для подачи тепла из выпускной части реактора в нагреватель линии подачи продувочного газа.7. Способ по п. 1 или 2, содержащий эксплуатацию указанного реактора для осаждения атомных слоев при давлении окружающей среды для осаждения материала на по меньшей мере одной подложке путем последовательных поверхностных реакций самонасыщения.8. Способ по п. 1 или 2, содержащий использование эжектора, присоединенного к выпускной части реактора, для снижения рабочего давления в реакторе.9. Устройство, содержащее реакционную камеру для осаждения атомных слоев, выполненную с возможностью осаждения материала на по меньшей мере одной подложке путем последовательных поверхностных реакций самонасыщения; и линию подачи сухого воздуха из источника сухого воздуха для подачи сухого воздуха в качестве продувочного газа в реакционную камеру реактора.10. Устройство по п. 9, содержащее линию подачи прекурсора, и
Claims (17)
1. Способ, содержащий эксплуатацию реактора для осаждения атомных слоев, выполненного с возможностью осаждения материала на по меньшей мере одной подложке путем последовательных поверхностных реакций самонасыщения; и использование сухого воздуха в реакторе в качестве продувочного газа.
2. Способ по п. 1, содержащий использование сухого воздуха в качестве несущего газа.
3. Способ по п. 1 или 2, содержащий подачу сухого воздуха в реакционную камеру реактора в течение всей последовательности осаждения.
4. Способ по п. 1 или 2, содержащий использование сухого воздуха при нагревании реакционной камеры реактора.
5. Способ по п. 1 или 2, содержащий нагревание сухого воздуха после клапана подачи продувочного газа.
6. Способ по п. 1 или 2, содержащий обеспечение обратного соединения для подачи тепла из выпускной части реактора в нагреватель линии подачи продувочного газа.
7. Способ по п. 1 или 2, содержащий эксплуатацию указанного реактора для осаждения атомных слоев при давлении окружающей среды для осаждения материала на по меньшей мере одной подложке путем последовательных поверхностных реакций самонасыщения.
8. Способ по п. 1 или 2, содержащий использование эжектора, присоединенного к выпускной части реактора, для снижения рабочего давления в реакторе.
9. Устройство, содержащее реакционную камеру для осаждения атомных слоев, выполненную с возможностью осаждения материала на по меньшей мере одной подложке путем последовательных поверхностных реакций самонасыщения; и линию подачи сухого воздуха из источника сухого воздуха для подачи сухого воздуха в качестве продувочного газа в реакционную камеру реактора.
10. Устройство по п. 9, содержащее линию подачи прекурсора, идущую из источника сухого воздуха через источник прекурсора в реакционую камеру, для подачи паров прекурсора в реакционную камеру.
11. Устройство по п. 9 или 10, содержащее нагреватель, выполненный с возможностью нагрева сухого воздуха.
12. Устройство по п. 11, содержащее указанный нагреватель после клапана подачи продувочного газа.
13. Устройство по п. 9 или 10, содержащее обратное соединение для подачи тепла из выпускной части реактора в нагреватель линии подачи продувочного газа.
14. Устройство по п. 9 или 10, в котором реактор является облегченным реактором, выполненным с возможностью работы при давлении окружающей среды или давлении, близком к давлению окружающей среды.
15. Устройство по п. 9 или 10, содержащее эжектор, присоединенный к выпускной части реактора, для снижения рабочего давления в реакторе.
16. Производственная линия, содержащая устройство по любому из пп. 9-15, в качестве части производственной линии.
17. Устройство, содержащее средства для эксплуатации реактора для осаждения атомных слоев, выполненного с возможностью осаждения материала на по меньшей мере одной подложке путем последовательных поверхностных реакций самонасыщения; и средства для использования сухого воздуха в реакторе в качестве продувочного газа.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/FI2012/050296 WO2013140021A1 (en) | 2012-03-23 | 2012-03-23 | Atomic layer deposition method and apparatuses |
Publications (2)
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RU2014139815A true RU2014139815A (ru) | 2016-05-20 |
RU2600047C2 RU2600047C2 (ru) | 2016-10-20 |
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RU2014139815/02A RU2600047C2 (ru) | 2012-03-23 | 2012-03-23 | Способ и устройство для осаждения атомных слоев |
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Country | Link |
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US (1) | US20150307989A1 (ru) |
EP (1) | EP2841621A4 (ru) |
JP (1) | JP2015512471A (ru) |
KR (1) | KR20140144243A (ru) |
CN (1) | CN104204290A (ru) |
IN (1) | IN2014DN07267A (ru) |
RU (1) | RU2600047C2 (ru) |
SG (1) | SG11201405417YA (ru) |
TW (1) | TW201348504A (ru) |
WO (1) | WO2013140021A1 (ru) |
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FI20105906A0 (fi) * | 2010-08-30 | 2010-08-30 | Beneq Oy | Laite |
FI20105903A0 (fi) * | 2010-08-30 | 2010-08-30 | Beneq Oy | Laite |
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- 2012-03-23 KR KR1020147029804A patent/KR20140144243A/ko not_active Application Discontinuation
- 2012-03-23 SG SG11201405417YA patent/SG11201405417YA/en unknown
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IN2014DN07267A (ru) | 2015-04-24 |
EP2841621A4 (en) | 2016-03-16 |
WO2013140021A1 (en) | 2013-09-26 |
KR20140144243A (ko) | 2014-12-18 |
SG11201405417YA (en) | 2014-10-30 |
EP2841621A1 (en) | 2015-03-04 |
TW201348504A (zh) | 2013-12-01 |
US20150307989A1 (en) | 2015-10-29 |
CN104204290A (zh) | 2014-12-10 |
RU2600047C2 (ru) | 2016-10-20 |
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