ES2511315B1 - Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento - Google Patents

Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento Download PDF

Info

Publication number
ES2511315B1
ES2511315B1 ES201330585A ES201330585A ES2511315B1 ES 2511315 B1 ES2511315 B1 ES 2511315B1 ES 201330585 A ES201330585 A ES 201330585A ES 201330585 A ES201330585 A ES 201330585A ES 2511315 B1 ES2511315 B1 ES 2511315B1
Authority
ES
Spain
Prior art keywords
procedure
graphene
pressure
pulses
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES201330585A
Other languages
English (en)
Other versions
ES2511315A1 (es
Inventor
Enric Bertran Serra
Víctor Manuel FREIRE SOLER
Adrián RAMÍREZ SÁNCHEZ
Esther PASCUAL MIRALLES
José Luis ANDÚJAR BELLA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universitat Autonoma de Barcelona UAB
Universitat de Barcelona UB
Original Assignee
Universitat Autonoma de Barcelona UAB
Universitat de Barcelona UB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitat Autonoma de Barcelona UAB, Universitat de Barcelona UB filed Critical Universitat Autonoma de Barcelona UAB
Priority to ES201330585A priority Critical patent/ES2511315B1/es
Priority to PCT/ES2014/070295 priority patent/WO2014174133A1/es
Publication of ES2511315A1 publication Critical patent/ES2511315A1/es
Application granted granted Critical
Publication of ES2511315B1 publication Critical patent/ES2511315B1/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento.#Procedimiento y dispositivo para preparar una estructura de grafeno de 1-5 capas, teniendo control del número de capas, mediante un procedimiento de depósito químico de vapor sobre un sustrato determinado, a la presión de vacío de 10{sup,-4}-10{sup,-5} Pa, y a la temperatura de 500-1050ºC, basado en usar un gas precursor de carbono con una secuencia sincronizada de pulsos; cada pulso tiene un tiempo específico de escape del gas precursor, debido al bombeo, consistiendo el pulso de presión en una subida de presión instantánea debida a la apertura instantánea de una válvula, seguida de un decrecimiento exponencial de la presión; el número de pulsos estando en función de la cantidad de capas, y el tiempo entre pulsos estando en función del tiempo específico de escape del gas precursor de carbono.

Description

imagen1
imagen2
imagen3
imagen4
imagen5
imagen6
imagen7
imagen8
imagen9
imagen10
imagen11
imagen12
imagen13
imagen14
imagen15
imagen16
imagen17
imagen18
imagen19

Claims (1)

  1. imagen1
    imagen2
    imagen3
    imagen4
ES201330585A 2013-04-22 2013-04-22 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento Active ES2511315B1 (es)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ES201330585A ES2511315B1 (es) 2013-04-22 2013-04-22 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento
PCT/ES2014/070295 WO2014174133A1 (es) 2013-04-22 2014-04-10 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES201330585A ES2511315B1 (es) 2013-04-22 2013-04-22 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento

Publications (2)

Publication Number Publication Date
ES2511315A1 ES2511315A1 (es) 2014-10-22
ES2511315B1 true ES2511315B1 (es) 2015-07-31

Family

ID=51727138

Family Applications (1)

Application Number Title Priority Date Filing Date
ES201330585A Active ES2511315B1 (es) 2013-04-22 2013-04-22 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento

Country Status (2)

Country Link
ES (1) ES2511315B1 (es)
WO (1) WO2014174133A1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201723219A (zh) * 2015-10-15 2017-07-01 巴斯夫歐洲公司 在絕緣或半導體基板上的無金屬石墨烯合成
CN105366668A (zh) * 2015-11-04 2016-03-02 福建翔丰华新能源材料有限公司 一种超临界流体制备石墨烯的方法
CN105483824A (zh) * 2016-01-11 2016-04-13 信阳师范学院 制备单晶双层石墨烯的方法
CN108439383A (zh) * 2018-04-13 2018-08-24 郑州大学 一种超声超临界二氧化碳-剪切耦合剥离膨胀石墨制备寡层石墨纳米片的方法
CN108529605A (zh) * 2018-06-26 2018-09-14 东南大学 一种大面积图案化石墨烯的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012031238A2 (en) * 2010-09-03 2012-03-08 The Regents Of The University Of Michigan Uniform multilayer graphene by chemical vapor deposition

Also Published As

Publication number Publication date
WO2014174133A1 (es) 2014-10-30
ES2511315A1 (es) 2014-10-22

Similar Documents

Publication Publication Date Title
ES2511315B1 (es) Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento
WO2015036708A3 (fr) Dispositif de récupération de vapeurs issues d'un réservoir cryogénique
AR099323A1 (es) Un sistema generador de aerosol que posee un dispositivo calentador permeable a fluidos y un cartucho para un sistema generador de aerosol que tiene un dispositivo calentador permeable a fluidos
AR089602A1 (es) Articulo generador de aerosoles para usar con un dispositivo generador de aerosoles
RU2014139815A (ru) Способ и устройство для осаждения атомных слоев
JP2015079976A5 (ja) 半導体装置
AR097297A1 (es) Proporcionar capacidades de diagnóstico y/o pronóstico en un sistema de control de procesos
JP2015079946A5 (es)
AR089124A1 (es) Un dispositivo generador de aerosol que posee entradas de flujo de aire
PE20181501A1 (es) Dispositivo de electroporacion con arreglo de agujas extraible con sistema de bloqueo
CL2012000295A1 (es) Filtro para un sistema de deposición por arco, que comprende un cátodo alargado, ánodo, y al menos un substrato y un número par de ensambles de conductos simétricamente colocados alrededor alternativamente conectados a la parte superior e inferior del cátodo; y sistema de deposición por arco que comprende dicho filtro.
AR093302A1 (es) Metodo para operar una disposicion para almacenar energia termica
ES2561727B1 (es) Dispositivo, método y máquina de deposición de fluidos sobre una superficie
CL2016003099A1 (es) Controlador para sistema de alcantarillado por vacío
ITMI20110830A1 (it) Valvola per una turbina a vapore 700 c
WO2012131021A3 (en) Organic rankine cycle for concentrated solar power system with saturated liquid storage and method
AR099946A1 (es) Método para correlacionar condensados de gas y gases húmedos en extensiones productivas de esquistos no convencionales
WO2014139763A3 (en) Lithographic apparatus and to a reflector apparatus
TW201612976A (en) Etching method and storage medium
CO2017001040A2 (es) Aparatos y sistemas de producción de núcleos de producto de reacción a partir de núcleos de reactante
JP2012023350A5 (es)
WO2015171579A3 (en) Pressure regulator
WO2012160330A3 (en) An electric shower
IL242870B (en) A device for the synthesis of a polymer with the extraction of a gaseous substance, which includes a reaction chamber with at least one cylindrical-round part
FI20165431A (fi) Paineastioiden, soveltuvimmin levytyyppisten lämmönsiirrinten päädyn rakenne, sisäisen paineen ja lämpötilan vaihteluiden aiheuttamien liikemuutosten ja värähtelyiden vaikutusten vähentämiseksi, menetelmä sen toteuttamiseksi sekä käyttö

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 2511315

Country of ref document: ES

Kind code of ref document: B1

Effective date: 20150731