ES2511315A1 - Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento - Google Patents

Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento Download PDF

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Publication number
ES2511315A1
ES2511315A1 ES201330585A ES201330585A ES2511315A1 ES 2511315 A1 ES2511315 A1 ES 2511315A1 ES 201330585 A ES201330585 A ES 201330585A ES 201330585 A ES201330585 A ES 201330585A ES 2511315 A1 ES2511315 A1 ES 2511315A1
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ES
Spain
Prior art keywords
pressure
layers
carrying
low pressure
controlled production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES201330585A
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English (en)
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ES2511315B1 (es
Inventor
Enric Bertran Serra
Víctor Manuel FREIRE SOLER
Adrián RAMÍREZ SÁNCHEZ
Esther PASCUAL MIRALLES
José Luis ANDÚJAR BELLA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universitat Autonoma de Barcelona UAB
Universitat de Barcelona UB
Original Assignee
Universitat Autonoma de Barcelona UAB
Universitat de Barcelona UB
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Publication date
Application filed by Universitat Autonoma de Barcelona UAB, Universitat de Barcelona UB filed Critical Universitat Autonoma de Barcelona UAB
Priority to ES201330585A priority Critical patent/ES2511315B1/es
Priority to PCT/ES2014/070295 priority patent/WO2014174133A1/es
Publication of ES2511315A1 publication Critical patent/ES2511315A1/es
Application granted granted Critical
Publication of ES2511315B1 publication Critical patent/ES2511315B1/es
Active legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon

Abstract

Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento. Procedimiento y dispositivo para preparar una estructura de grafeno de 1-5 capas, teniendo control del número de capas, mediante un procedimiento de depósito químico de vapor sobre un sustrato determinado, a la presión de vacío de 10-4-10-5 Pa, y a la temperatura de 500-1050ºC, basado en usar un gas precursor de carbono con una secuencia sincronizada de pulsos; cada pulso tiene un tiempo específico de escape del gas precursor, debido al bombeo, consistiendo el pulso de presión en una subida de presión instantánea debida a la apertura instantánea de una válvula, seguida de un decrecimiento exponencial de la presión; el número de pulsos estando en función de la cantidad de capas, y el tiempo entre pulsos estando en función del tiempo específico de escape del gas precursor de carbono.

Description

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Claims (1)

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ES201330585A 2013-04-22 2013-04-22 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento Active ES2511315B1 (es)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ES201330585A ES2511315B1 (es) 2013-04-22 2013-04-22 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento
PCT/ES2014/070295 WO2014174133A1 (es) 2013-04-22 2014-04-10 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES201330585A ES2511315B1 (es) 2013-04-22 2013-04-22 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento

Publications (2)

Publication Number Publication Date
ES2511315A1 true ES2511315A1 (es) 2014-10-22
ES2511315B1 ES2511315B1 (es) 2015-07-31

Family

ID=51727138

Family Applications (1)

Application Number Title Priority Date Filing Date
ES201330585A Active ES2511315B1 (es) 2013-04-22 2013-04-22 Procedimiento para la producción controlada de grafeno a muy baja presión y dispositivo para llevar a cabo el procedimiento

Country Status (2)

Country Link
ES (1) ES2511315B1 (es)
WO (1) WO2014174133A1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201723219A (zh) * 2015-10-15 2017-07-01 巴斯夫歐洲公司 在絕緣或半導體基板上的無金屬石墨烯合成
CN105366668A (zh) * 2015-11-04 2016-03-02 福建翔丰华新能源材料有限公司 一种超临界流体制备石墨烯的方法
CN105483824A (zh) * 2016-01-11 2016-04-13 信阳师范学院 制备单晶双层石墨烯的方法
CN108439383A (zh) * 2018-04-13 2018-08-24 郑州大学 一种超声超临界二氧化碳-剪切耦合剥离膨胀石墨制备寡层石墨纳米片的方法
CN108529605A (zh) * 2018-06-26 2018-09-14 东南大学 一种大面积图案化石墨烯的制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012031238A2 (en) * 2010-09-03 2012-03-08 The Regents Of The University Of Michigan Uniform multilayer graphene by chemical vapor deposition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012031238A2 (en) * 2010-09-03 2012-03-08 The Regents Of The University Of Michigan Uniform multilayer graphene by chemical vapor deposition

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
HAN, Z., et al., Suppression of multilapyer graphene patches during graphene growth, Condensed Matter, 2012, [en línea], [recuperado el 09-01-2014], recuperado de Internet: <http://arxiv.org/abs/1205.1337> *
LIU, W., et al., Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition, Carbon, 2011, Vol.49, págs.4122-4130, ISSN 0008-6223 Doi: doi:10.1016/j.carbon.2011.05.047. *
REGMI, M., et al., The effect of growth parameters on the intrinsic properties of large-area single layer graphene grown by chemical vapor deposition on Cu, Carbon, 2011, Vol. 50, págs.134-141, ISSN 0008-6223 Doi: doi:10.1016/j.carbon.2011.07.063. *
SI, F.T., et al., Effects of ambient conditions on the quality of graphene synthesized by chemical vapor deposition, Vacuum, 2012, Vol.86, pág.1867-1870, ISSN 0042-207X Doi: doi:10.1016/j.vacuum.2012.04.035. *

Also Published As

Publication number Publication date
WO2014174133A1 (es) 2014-10-30
ES2511315B1 (es) 2015-07-31

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