JP2018500462A5 - - Google Patents

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Publication number
JP2018500462A5
JP2018500462A5 JP2017529021A JP2017529021A JP2018500462A5 JP 2018500462 A5 JP2018500462 A5 JP 2018500462A5 JP 2017529021 A JP2017529021 A JP 2017529021A JP 2017529021 A JP2017529021 A JP 2017529021A JP 2018500462 A5 JP2018500462 A5 JP 2018500462A5
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JP
Japan
Prior art keywords
precursor species
precursor
species
reaction chamber
during
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JP2017529021A
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English (en)
Japanese (ja)
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JP2018500462A (ja
JP6814136B2 (ja
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Priority claimed from FI20140361A external-priority patent/FI126970B/en
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Publication of JP2018500462A publication Critical patent/JP2018500462A/ja
Publication of JP2018500462A5 publication Critical patent/JP2018500462A5/ja
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Publication of JP6814136B2 publication Critical patent/JP6814136B2/ja
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JP2017529021A 2014-12-22 2015-11-25 Ａｌｄ法およびａｌｄ装置 Active JP6814136B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20140361A FI126970B (en) 2014-12-22 2014-12-22 Atomic layer cultivation in which the first and second species of source materials are present simultaneously
FI20140361 2014-12-22
PCT/FI2015/050819 WO2016102748A1 (en) 2014-12-22 2015-11-25 Ald method and apparatus

Publications (3)

Publication Number Publication Date
JP2018500462A JP2018500462A (ja) 2018-01-11
JP2018500462A5 true JP2018500462A5 (enExample) 2018-11-15
JP6814136B2 JP6814136B2 (ja) 2021-01-13

Family

ID=56149317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017529021A Active JP6814136B2 (ja) 2014-12-22 2015-11-25 Ａｌｄ法およびａｌｄ装置

Country Status (11)

Country Link
US (1) US10619241B2 (enExample)
EP (1) EP3237650B1 (enExample)
JP (1) JP6814136B2 (enExample)
KR (3) KR20170099904A (enExample)
CN (2) CN115961267A (enExample)
ES (1) ES2870613T3 (enExample)
FI (1) FI126970B (enExample)
RU (1) RU2702669C2 (enExample)
SG (1) SG11201703665WA (enExample)
TW (1) TWI684667B (enExample)
WO (1) WO2016102748A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3559307B1 (en) * 2017-02-08 2022-08-03 Picosun Oy Deposition or cleaning apparatus with movable structure and method of operation
CN107400878A (zh) * 2017-07-26 2017-11-28 北京芯微诺达科技有限公司 一种原子层沉积设备的进气系统及其方法
FI129557B (en) 2019-11-28 2022-04-29 Picosun Oy Substrate processing apparatus and process
FI129369B (en) * 2020-06-26 2021-12-31 Picosun Oy Substrate processing equipment and process
RU2748658C1 (ru) * 2020-07-16 2021-05-28 Пикосан Ой Устройство для осаждения или очистки с подвижной конструкцией и способ его эксплуатации
RU204415U1 (ru) * 2020-12-17 2021-05-24 Дмитрий Сергеевич Кузьмичев Устройство для атомно-слоевого осаждения
KR20220164161A (ko) * 2021-06-04 2022-12-13 주성엔지니어링(주) 박막 증착 방법

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KR100467366B1 (ko) 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
KR100474072B1 (ko) 2002-09-17 2005-03-10 주식회사 하이닉스반도체 귀금속 박막의 형성 방법
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
DE102004004719A1 (de) 2004-01-29 2005-08-18 Basf Ag Verfahren zur Herstellung von enantiomerenreinen Aminoalkoholen
US7326293B2 (en) * 2004-03-26 2008-02-05 Zyvex Labs, Llc Patterned atomic layer epitaxy
US20050221021A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for performing atomic layer deposition
JP2005310927A (ja) 2004-04-20 2005-11-04 Toshiba Corp 紫外線照射による高品質シリコン窒化膜の成膜方法
US7740704B2 (en) * 2004-06-25 2010-06-22 Tokyo Electron Limited High rate atomic layer deposition apparatus and method of using
US7351656B2 (en) * 2005-01-21 2008-04-01 Kabushiki Kaihsa Toshiba Semiconductor device having oxidized metal film and manufacture method of the same
JP4473824B2 (ja) 2005-01-21 2010-06-02 株式会社東芝 半導体装置の製造方法
US7727912B2 (en) * 2006-03-20 2010-06-01 Tokyo Electron Limited Method of light enhanced atomic layer deposition
US7709056B2 (en) * 2007-05-16 2010-05-04 Uchicago Argonne, Llc Synthesis of transparent conducting oxide coatings
US8129288B2 (en) * 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
US8741062B2 (en) 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US10378106B2 (en) * 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9379011B2 (en) * 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US20120237695A1 (en) * 2009-12-23 2012-09-20 2-Pye Solar, LLC Method and apparatus for depositing a thin film
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8637411B2 (en) * 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US20110256734A1 (en) 2010-04-15 2011-10-20 Hausmann Dennis M Silicon nitride films and methods
TWI563582B (en) 2010-06-03 2016-12-21 Novellus Systems Inc Method of improving film non-uniformity and throughput
BE1019439A3 (fr) 2010-07-30 2012-07-03 Diarotech Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
TW201224190A (en) * 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
JP5927679B2 (ja) * 2010-10-16 2016-06-01 ウルトラテック，インコーポレイテッド Ａｌｄコーティングシステム
US8465811B2 (en) * 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
CN103459660B (zh) * 2011-04-07 2016-01-06 皮考逊公司 具有等离子体源的沉积反应器
US8647993B2 (en) * 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
SG11201400633RA (en) * 2011-09-23 2014-08-28 Novellus Systems Inc Plasma activated conformal dielectric film deposition
US8912101B2 (en) * 2012-03-15 2014-12-16 Asm Ip Holding B.V. Method for forming Si-containing film using two precursors by ALD
EP2861780A4 (en) * 2012-06-15 2016-01-20 Picosun Oy Coating of a railway by means of atomic layer deposition
DE102012221080A1 (de) * 2012-11-19 2014-03-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements

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