JP6814136B2 - Ald法およびald装置 - Google Patents
Ald法およびald装置 Download PDFInfo
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- JP6814136B2 JP6814136B2 JP2017529021A JP2017529021A JP6814136B2 JP 6814136 B2 JP6814136 B2 JP 6814136B2 JP 2017529021 A JP2017529021 A JP 2017529021A JP 2017529021 A JP2017529021 A JP 2017529021A JP 6814136 B2 JP6814136 B2 JP 6814136B2
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- 238000000034 method Methods 0.000 title claims description 48
- 239000002243 precursor Substances 0.000 claims description 299
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- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 68
- 229910052755 nonmetal Inorganic materials 0.000 claims description 65
- 239000007789 gas Substances 0.000 claims description 63
- 230000004913 activation Effects 0.000 claims description 56
- 238000000151 deposition Methods 0.000 claims description 51
- 230000008021 deposition Effects 0.000 claims description 51
- 230000008929 regeneration Effects 0.000 claims description 36
- 238000011069 regeneration method Methods 0.000 claims description 36
- 238000000231 atomic layer deposition Methods 0.000 claims description 27
- 238000010926 purge Methods 0.000 claims description 20
- 239000012159 carrier gas Substances 0.000 claims description 18
- 239000011261 inert gas Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
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- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
Claims (21)
- 少なくとも1つの堆積サイクルを含む原子層堆積シーケンスを実行する方法であって、各サイクルにおいて単層の堆積材料が生成され、前記堆積サイクルは、少なくとも第1の前駆体種および第2の前駆体種を、反応室内にある基板表面に導入することを含み、該第1の前駆体種と該第2の前駆体種の両方は、気相として同時に該反応室内に存在する、方法において、
前記堆積サイクルは活性化期間および再生期間を含み、
前記活性化期間中、前記第2の前駆体種は、前の再生期間中に前記基板表面に吸着した前記第1の前駆体種と反応し、
次の再生期間中、前記第1の前駆体種は、前記活性化期間中に前記表面に吸着した前記第2の前駆体種と反応し、
前記第1の前駆体種または前記第2の前駆体種の一方は、前記活性化期間中に光子エネルギーによって励起され、
前記第2の前駆体種は、前記第1の前駆体種のキャリアガスとして使用される、
方法。 - 少なくとも1つの堆積サイクルを含む原子層堆積シーケンスを実行する方法であって、各サイクルにおいて単層の堆積材料が生成され、前記堆積サイクルは、少なくとも第1の前駆体種および第2の前駆体種を、反応室内にある基板表面に導入することを含み、該第1の前駆体種と該第2の前駆体種の両方は、気相として同時に該反応室内に存在する、方法において、
前記第2の前駆体種は、前記第1の前駆体種のキャリアガスとして使用され、
前記堆積サイクルは活性化期間および再生期間を含み、
前記活性化期間中、前記基板表面に吸着した前記第1の前駆体種が光子エネルギーにより励起され、これによって、前記吸着した第1の前駆体種は、前記表面において気相の前記第2の前駆体種と反応し、
次の再生期間中、気相の前記第1の前駆体種は、前記活性化期間中に前記表面に吸着した前記第2の前駆体種と反応する、
方法。 - 前記基板表面に吸着した前記第1の前駆体種を励起することを含み、これによって、前記吸着した第1の前駆体種は、前記表面において気相の前記第2の前駆体種と反応する、請求項1に記載の方法。
- 気相の前記第2の前駆体種を励起することを含み、これによって、前記励起された第2の前駆体種は、前記表面において前記吸着した第1の前駆体種と反応する、請求項1に記載の方法。
- 前記励起は、UVランプ、LEDランプ、キセノンランプ、X線源、レーザ源、赤外線源のうちのいずれかの光子源から放出される光子によって行われる、請求項1から4のいずれかに記載の方法。
- 前記基板はウエハ、金属フォイル、基板ウェブ、紙、ナノセルロースのいずれかである、請求項1から5のいずれかに記載の方法。
- 前記第1の前駆体種は光子の波長を調節することにより励起される、請求項1から6のいずれかに記載の方法。
- シェーダ又はシェーダノズルによって光子の暴露をオフにすることを含む、請求項1から7のいずれかに記載の方法。
- 前記反応室を囲む外室と前記反応室の間の中間空間に不活性ガスを供給することで、前記中間空間を加圧し、前記反応室の内部の圧力に比して前記中間空間の圧力を高くすることを含む、請求項1から8のいずれかに記載の方法。
- 前記第1の前駆体種の前記反応室への流れは、活性化期間中は止められ、再生期間中は存在するようにされ、
前記第2の前駆体種の前記反応室への流れは、活性化期間中も再生期間中も存在するようにされる、請求項1から9のいずれかに記載の方法。 - 前記反応は順次自己飽和表面反応である、請求項1から10のいずれかに記載の方法。
- 前記第1の前駆体種は金属前駆体種であり、前記第2の前駆体種は非金属前駆体種である、請求項1から11のいずれかに記載の方法。
- 前記堆積サイクルはパージ期間の実行なしで実行される、請求項1から12のいずれかに記載の方法。
- 装置であって、
反応室と、
少なくとも1つの供給管路と、
前記反応室内における少なくとも1つの堆積サイクルを含む原子層堆積シーケンスを実行するように前記装置を制御する制御システムであって、各サイクルにおいて単層の堆積材料が生成され、前記堆積サイクルは、少なくとも第1の前駆体種および第2の前駆体種を、該少なくとも1つの供給管路を介して、前記反応室内にある基板表面に導入することを含む、制御システムと、
を備え、
前記制御システムは、前記第1の前駆体種と前記第2の前駆体種の両方の前駆体蒸気が気相として同時に該反応室内に存在するように、及び、前記第2の前駆体種が前記第1の前駆体種のキャリアガスとして使用されるように、制御を行うようにさらに構成され、
前記堆積サイクルは活性化期間および再生期間を含み、前記装置は、前記第1の前駆体種または前記第2の前駆体種の一方を前記活性化期間中に光子エネルギーによって励起するための光子源を備え、
前記装置は更に、
前記活性化期間中、前記第2の前駆体種を、前の再生期間中に前記基板表面に吸着した前記第1の前駆体種と反応させ、
次の再生期間中、前記第1の前駆体種を、前記活性化期間中に前記表面に吸着した前記第2の前駆体種と反応させる、
ように構成される、
装置。 - 装置であって、
反応室と、
少なくとも1つの供給管路と、
前記反応室内における少なくとも1つの堆積サイクルを含む原子層堆積シーケンスを実行するように前記装置を制御する制御システムであって、各サイクルにおいて単層の堆積材料が生成され、前記堆積サイクルは、少なくとも第1の前駆体種および第2の前駆体種を、該少なくとも1つの供給管路を介して、前記反応室内にある基板表面に導入することを含む、制御システムと、
を備え、
前記制御システムは、前記第1の前駆体種と前記第2の前駆体種の両方の前駆体蒸気が気相として同時に該反応室内に存在するように、及び、前記第2の前駆体種が前記第1の前駆体種のキャリアガスとして使用されるように、制御を行うようにさらに構成され、
前記堆積サイクルは活性化期間および再生期間を含み、
前記装置は光子源を備え、前記活性化期間中、前記基板表面に吸着した前記第1の前駆体種を前記光子源からの光子エネルギーによって励起するように構成され、これによって、前記吸着した第1の前駆体種は、前記表面において気相の前記第2の前駆体種と反応し、
次の再生期間中、気相の前記第1の前駆体種を、前記活性化期間中に前記表面に吸着した前記第2の前駆体種と反応させる、
ように構成される、装置。 - 前記装置は、前記基板表面に吸着した前記第1の前駆体種を励起するように構成され、これによって、前記吸着した第1の前駆体種は、前記表面において気相の前記第2の前駆体種と反応する、請求項14に記載の装置。
- 前記装置は、気相の前記第2の前駆体種を励起するように構成され、これによって、前記励起された第2の前駆体種は、前記表面において前記吸着した第1の前駆体種と反応する、請求項14に記載の装置。
- 前記基板と光子源との間であって前記基板の上に設けられたシェーダノズルを備え、ここで前記シェーダノズルは、前記反応室内で、シェーダとしても、供給ノズルとしても使用される、請求項14から17のいずれかに記載の装置。
- 前記反応は順次自己飽和表面反応である、請求項14から18に記載の装置。
- 前記第1の前駆体種は金属前駆体種であり、前記第2の前駆体種は非金属前駆体種である、請求項14から19のいずれかに記載の装置。
- 前記制御システムは、前記堆積サイクルがパージ期間の実行なしで実行されるような制御を行うように構成される、請求項14から20のいずれかに記載の装置。
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