JP2011530823A5 - - Google Patents

Download PDF

Info

Publication number
JP2011530823A5
JP2011530823A5 JP2011522453A JP2011522453A JP2011530823A5 JP 2011530823 A5 JP2011530823 A5 JP 2011530823A5 JP 2011522453 A JP2011522453 A JP 2011522453A JP 2011522453 A JP2011522453 A JP 2011522453A JP 2011530823 A5 JP2011530823 A5 JP 2011530823A5
Authority
JP
Japan
Prior art keywords
radiation
lithographic apparatus
radiation beam
hydrogen
projection system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011522453A
Other languages
English (en)
Japanese (ja)
Other versions
JP5732393B2 (ja
JP2011530823A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2009/058898 external-priority patent/WO2010018039A1/en
Publication of JP2011530823A publication Critical patent/JP2011530823A/ja
Publication of JP2011530823A5 publication Critical patent/JP2011530823A5/ja
Application granted granted Critical
Publication of JP5732393B2 publication Critical patent/JP5732393B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011522453A 2008-08-14 2009-07-13 リソグラフィ装置、およびデバイス製造方法 Active JP5732393B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13612908P 2008-08-14 2008-08-14
US13613008P 2008-08-14 2008-08-14
US61/136,130 2008-08-14
US61/136,129 2008-08-14
US19337308P 2008-11-21 2008-11-21
US61/193,373 2008-11-21
PCT/EP2009/058898 WO2010018039A1 (en) 2008-08-14 2009-07-13 Radiation source, lithographic apparatus and device manufacturing method

Publications (3)

Publication Number Publication Date
JP2011530823A JP2011530823A (ja) 2011-12-22
JP2011530823A5 true JP2011530823A5 (enExample) 2012-08-30
JP5732393B2 JP5732393B2 (ja) 2015-06-10

Family

ID=41110410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011522453A Active JP5732393B2 (ja) 2008-08-14 2009-07-13 リソグラフィ装置、およびデバイス製造方法

Country Status (6)

Country Link
US (1) US8685632B2 (enExample)
JP (1) JP5732393B2 (enExample)
KR (1) KR101626012B1 (enExample)
CN (1) CN102119366B (enExample)
NL (1) NL2003152A1 (enExample)
WO (1) WO2010018039A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587768B2 (en) * 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
DE102010038697B4 (de) * 2010-07-30 2012-07-19 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Qualifizierung einer Optik einer Projektionsbelichtungsanlage für die Mikrolithographie
US9594306B2 (en) 2011-03-04 2017-03-14 Asml Netherlands B.V. Lithographic apparatus, spectral purity filter and device manufacturing method
US8916831B2 (en) 2011-03-16 2014-12-23 Kla-Tencor Corporation EUV actinic reticle inspection system using imaging sensor with thin film spectral purity filter coating
CN103718654B (zh) * 2011-08-05 2016-04-20 Asml荷兰有限公司 辐射源和用于光刻设备的方法和器件制造方法
NL2011237A (en) * 2012-08-03 2014-02-04 Asml Netherlands Bv Lithographic apparatus and method.
EP3257054B1 (en) * 2015-02-10 2019-10-16 Carl Zeiss SMT GmbH Euv multilayer mirror, optical system including a multilayer mirror and method of manufacturing a multilayer mirror
CN114556225A (zh) * 2019-10-15 2022-05-27 Asml荷兰有限公司 光刻设备和器件制造方法
JP6919699B2 (ja) 2019-11-28 2021-08-18 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP7421411B2 (ja) 2020-04-30 2024-01-24 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
WO2021221123A1 (ja) 2020-04-30 2021-11-04 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP7525354B2 (ja) 2020-09-28 2024-07-30 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7538050B2 (ja) 2021-01-08 2024-08-21 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7614949B2 (ja) 2021-06-02 2025-01-16 テクセンドフォトマスク株式会社 反射型フォトマスクブランク及び反射型フォトマスク
DE102022212168A1 (de) 2022-11-16 2024-05-16 Carl Zeiss Smt Gmbh EUV-Optik-Modul für eine EUV-Projektionsbelichtungsanlage

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG139554A1 (en) * 2002-12-20 2008-02-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
TWI264620B (en) 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8094288B2 (en) * 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006011105A2 (en) * 2004-07-22 2006-02-02 Philips Intellectual Property & Standards Gmbh Optical system having a cleaning arrangement
US7453645B2 (en) * 2004-12-30 2008-11-18 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
US7518128B2 (en) * 2006-06-30 2009-04-14 Asml Netherlands B.V. Lithographic apparatus comprising a cleaning arrangement, cleaning arrangement and method for cleaning a surface to be cleaned
US7473908B2 (en) * 2006-07-14 2009-01-06 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface
DE102006054726B4 (de) 2006-11-21 2014-09-11 Asml Netherlands B.V. Verfahren zum Entfernen von Kontaminationen auf optischen Oberflächen und optische Anordnung
NL2004787A (en) * 2009-06-30 2011-01-04 Asml Netherlands Bv Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter.

Similar Documents

Publication Publication Date Title
JP2011530823A5 (enExample)
KR101909546B1 (ko) Euv 광원의 광학 세정 시스템 및 방법
TW200745727A (en) Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system
JP6250554B2 (ja) ソースコレクタデバイス、リソグラフィ装置、及び放射コレクタ
KR20250116173A (ko) 리소그래피 장치용 펠리클 멤브레인
JP2010534946A5 (enExample)
TW200511389A (en) Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system
JP6898867B2 (ja) 膜アセンブリを製造するための方法
JP2008518480A5 (enExample)
JP2013513949A5 (enExample)
JP2009543332A (ja) 洗浄構成を含むリソグラフィ装置、洗浄構成、および洗浄される表面を洗浄するための方法
JP2009055062A5 (enExample)
JP2012074388A5 (ja) 放射源、リソグラフィ装置、並びに放射源又はリソグラフィ装置を用いる方法
EP1586949A3 (en) Exposure apparatus and exposure method using EUV light
KR20130005287A (ko) 방사선 소스, 리소그래피 장치 및 디바이스 제조방법
JP2004289151A5 (enExample)
KR101899266B1 (ko) 자기 조직화 단분자막의 패터닝 장치, 광 조사 장치, 및 자기 조직화 단분자막의 패터닝 방법
Mizoguchi et al. High power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing
TW201905599A (zh) 用於極紫外光輻射源設備的碎片收集裝置
JP6940529B2 (ja) デブリ低減システム、放射源及びリソグラフィ装置
JP2014531704A5 (enExample)
WO2009126770A3 (en) Plasma-based euv light source
US20140218706A1 (en) Radiation source and lithographic apparatus
KR20110026497A (ko) 리소그래피 장치의 피복되지 않은 다층 미러 상의 침적물을 제거하는 방법, 리소그래피 장치, 및 디바이스 제조 방법
US20130114059A1 (en) Components for EUV Lithographic Apparatus, EUV Lithographic Apparatus Including Such Components and Method for Manufacturing Such Components