KR101626012B1 - 방사선 소스, 리소그래피 장치 및 디바이스 제조방법 - Google Patents

방사선 소스, 리소그래피 장치 및 디바이스 제조방법 Download PDF

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KR101626012B1
KR101626012B1 KR1020117005827A KR20117005827A KR101626012B1 KR 101626012 B1 KR101626012 B1 KR 101626012B1 KR 1020117005827 A KR1020117005827 A KR 1020117005827A KR 20117005827 A KR20117005827 A KR 20117005827A KR 101626012 B1 KR101626012 B1 KR 101626012B1
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radiation
lithographic apparatus
filter
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Korean (ko)
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KR20110058810A (ko
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안토니우스 켐펜
바딤 바니네
블라디미르 이바노프
에릭 루프스트라
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에이에스엠엘 네델란즈 비.브이.
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0275Photolithographic processes using lasers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983Optical system protection, e.g. pellicles or removable covers for protection of mask
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
KR1020117005827A 2008-08-14 2009-07-13 방사선 소스, 리소그래피 장치 및 디바이스 제조방법 Active KR101626012B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US13613008P 2008-08-14 2008-08-14
US13612908P 2008-08-14 2008-08-14
US61/136,130 2008-08-14
US61/136,129 2008-08-14
US19337308P 2008-11-21 2008-11-21
US61/193,373 2008-11-21

Publications (2)

Publication Number Publication Date
KR20110058810A KR20110058810A (ko) 2011-06-01
KR101626012B1 true KR101626012B1 (ko) 2016-05-31

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KR1020117005827A Active KR101626012B1 (ko) 2008-08-14 2009-07-13 방사선 소스, 리소그래피 장치 및 디바이스 제조방법

Country Status (6)

Country Link
US (1) US8685632B2 (enExample)
JP (1) JP5732393B2 (enExample)
KR (1) KR101626012B1 (enExample)
CN (1) CN102119366B (enExample)
NL (1) NL2003152A1 (enExample)
WO (1) WO2010018039A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587768B2 (en) * 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
DE102010038697B4 (de) * 2010-07-30 2012-07-19 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Qualifizierung einer Optik einer Projektionsbelichtungsanlage für die Mikrolithographie
US9594306B2 (en) * 2011-03-04 2017-03-14 Asml Netherlands B.V. Lithographic apparatus, spectral purity filter and device manufacturing method
KR101793316B1 (ko) * 2011-03-16 2017-11-02 케이엘에이-텐코 코포레이션 박막 스펙트럼 순도 필터 코팅을 갖는 영상 센서를 사용하는 euv 화학선 레티클 검사 시스템
KR20140052012A (ko) * 2011-08-05 2014-05-02 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치에 대한 방법 및 방사선 소스 및 디바이스 제조 방법
US9606445B2 (en) * 2012-08-03 2017-03-28 Asml Netherlands B.V. Lithographic apparatus and method of manufacturing a device
JP6731415B2 (ja) * 2015-02-10 2020-07-29 カール・ツァイス・エスエムティー・ゲーエムベーハー Euv多層ミラー、多層ミラーを含む光学系及び多層ミラーを製造する方法
CN114556225A (zh) * 2019-10-15 2022-05-27 Asml荷兰有限公司 光刻设备和器件制造方法
JP6919699B2 (ja) 2019-11-28 2021-08-18 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP7421411B2 (ja) 2020-04-30 2024-01-24 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
US20230143851A1 (en) 2020-04-30 2023-05-11 Toppan Photomask Co., Ltd. Reflective photomask blank and reflective photomask
JP7525354B2 (ja) 2020-09-28 2024-07-30 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7538050B2 (ja) 2021-01-08 2024-08-21 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7614949B2 (ja) 2021-06-02 2025-01-16 テクセンドフォトマスク株式会社 反射型フォトマスクブランク及び反射型フォトマスク
DE102022212168A1 (de) * 2022-11-16 2024-05-16 Carl Zeiss Smt Gmbh EUV-Optik-Modul für eine EUV-Projektionsbelichtungsanlage

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008002134A2 (en) 2006-06-30 2008-01-03 Asml Netherlands B.V. Arrangement for cleaning a surface in a lithographic apparatus
WO2008061690A1 (de) 2006-11-21 2008-05-29 Carl Zeiss Smt Ag Verfahren zum entfernen von kontaminationen auf optischen oberflächen und optische anordnung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG139554A1 (en) * 2002-12-20 2008-02-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
TWI264620B (en) 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8094288B2 (en) 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
ATE555422T1 (de) 2004-07-22 2012-05-15 Koninkl Philips Electronics Nv Optisches system mit einer reinigungsanordnung
US7453645B2 (en) * 2004-12-30 2008-11-18 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
US7473908B2 (en) 2006-07-14 2009-01-06 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface
NL2004787A (en) * 2009-06-30 2011-01-04 Asml Netherlands Bv Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008002134A2 (en) 2006-06-30 2008-01-03 Asml Netherlands B.V. Arrangement for cleaning a surface in a lithographic apparatus
WO2008061690A1 (de) 2006-11-21 2008-05-29 Carl Zeiss Smt Ag Verfahren zum entfernen von kontaminationen auf optischen oberflächen und optische anordnung

Also Published As

Publication number Publication date
JP2011530823A (ja) 2011-12-22
US8685632B2 (en) 2014-04-01
NL2003152A1 (nl) 2010-02-16
JP5732393B2 (ja) 2015-06-10
CN102119366A (zh) 2011-07-06
WO2010018039A1 (en) 2010-02-18
CN102119366B (zh) 2015-04-22
KR20110058810A (ko) 2011-06-01
US20110143288A1 (en) 2011-06-16

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