JP5732393B2 - リソグラフィ装置、およびデバイス製造方法 - Google Patents
リソグラフィ装置、およびデバイス製造方法 Download PDFInfo
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- JP5732393B2 JP5732393B2 JP2011522453A JP2011522453A JP5732393B2 JP 5732393 B2 JP5732393 B2 JP 5732393B2 JP 2011522453 A JP2011522453 A JP 2011522453A JP 2011522453 A JP2011522453 A JP 2011522453A JP 5732393 B2 JP5732393 B2 JP 5732393B2
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- 238000004519 manufacturing process Methods 0.000 title description 5
- 230000005855 radiation Effects 0.000 claims description 212
- 239000000758 substrate Substances 0.000 claims description 65
- 239000001257 hydrogen Substances 0.000 claims description 62
- 229910052739 hydrogen Inorganic materials 0.000 claims description 62
- 238000005286 illumination Methods 0.000 claims description 57
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 48
- 238000000059 patterning Methods 0.000 claims description 38
- 230000003595 spectral effect Effects 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 25
- 238000011109 contamination Methods 0.000 claims description 24
- 239000010410 layer Substances 0.000 description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 26
- 229910052786 argon Inorganic materials 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 9
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 238000010494 dissociation reaction Methods 0.000 description 7
- 230000005593 dissociations Effects 0.000 description 7
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- 238000002310 reflectometry Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 3
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- 238000009826 distribution Methods 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
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- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000009304 pastoral farming Methods 0.000 description 2
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- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 238000000407 epitaxy Methods 0.000 description 1
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- 238000001914 filtration Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- 230000005469 synchrotron radiation Effects 0.000 description 1
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- -1 tin nitride Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
Description
水素ガスによって提供される洗浄量を増加させるために、放射ビームおよび不活性ガスを使って原子水素を生成することと、を含むデバイス製造方法が提供される。
本発明のいくつかの実施形態を、単なる例として、添付の概略図を参照して以下に説明する。これらの図面において同じ参照符号は対応する部分を示す。
Claims (10)
- リソグラフィ装置であって、
基板上にパターンを投影するのに使用される波長を有する第1放射および前記第1放射の波長以外の波長を有する第2放射を含む放射ビームを、プラズマを使用して生成する放射源と、
前記放射ビームを調整し、かつ前記リソグラフィ装置の露光中に水素ガスを受ける照明システムと、
パターニングデバイスを保持するサポート構造であって、前記パターニングデバイスは、前記放射ビームの断面にパターンを付与してパターン付き放射ビームを形成することができる、サポート構造と、
基板を保持する基板テーブルと、
前記パターン付き放射ビームを前記基板のターゲット部分上に投影する投影システムと、
を備え、
前記プラズマにより生成された前記第2放射の少なくとも50%が前記照明システムに入射し、かつ前記第2放射は水素ラジカルを生成するための前記水素ガスと相互作用する放射波長を含む、
リソグラフィ装置。 - 前記第1放射は、極端紫外線放射を含む、請求項1に記載のリソグラフィ装置。
- 前記第2放射は、紫外線放射および/または深紫外線放射を含む、請求項1又は2に記載のリソグラフィ装置。
- 前記投影システムは、前記リソグラフィ装置の動作中に水素ガスを受け、
前記プラズマにより生成された前記第2放射の少なくとも50%が前記照明システムに入射し、かつ前記第2放射は水素ラジカルを生成するための前記水素ガスと相互作用する波長放射を含む、
請求項1乃至3いずれか一項に記載のリソグラフィ装置。 - 前記投影システム内に設けられる1つ以上のフィルタをさらに備え、前記1つ以上のフィルタは、前記水素ラジカルの生成を補助する波長の前記第2放射をフィルタ除去する、請求項1乃至4いずれか一項に記載のリソグラフィ装置。
- 前記1つ以上のフィルタは、前記放射ビームを最後に受ける前記投影システムの端部に配置される、請求項5に記載のリソグラフィ装置。
- 前記1つ以上のフィルタは、前記投影システムと前記基板テーブルとの間に配置される、請求項5に記載のリソグラフィ装置。
- 前記1つ以上のフィルタは、前記リソグラフィ装置の動的ガスロックに隣接して配置される、請求項5に記載のリソグラフィ装置。
- 前記1つ以上のフィルタは、スペクトル純度フィルタである、請求項5に記載のリソグラフィ装置。
- 前記水素ラジカルは、前記リソグラフィ装置内の反射面から汚染を除去する、
請求項1乃至9いずれか一項に記載のリソグラフィ装置。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13613008P | 2008-08-14 | 2008-08-14 | |
US13612908P | 2008-08-14 | 2008-08-14 | |
US61/136,130 | 2008-08-14 | ||
US61/136,129 | 2008-08-14 | ||
US19337308P | 2008-11-21 | 2008-11-21 | |
US61/193,373 | 2008-11-21 | ||
PCT/EP2009/058898 WO2010018039A1 (en) | 2008-08-14 | 2009-07-13 | Radiation source, lithographic apparatus and device manufacturing method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011530823A JP2011530823A (ja) | 2011-12-22 |
JP2011530823A5 JP2011530823A5 (ja) | 2012-08-30 |
JP5732393B2 true JP5732393B2 (ja) | 2015-06-10 |
Family
ID=41110410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011522453A Active JP5732393B2 (ja) | 2008-08-14 | 2009-07-13 | リソグラフィ装置、およびデバイス製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8685632B2 (ja) |
JP (1) | JP5732393B2 (ja) |
KR (1) | KR101626012B1 (ja) |
CN (1) | CN102119366B (ja) |
NL (1) | NL2003152A1 (ja) |
WO (1) | WO2010018039A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8587768B2 (en) * | 2010-04-05 | 2013-11-19 | Media Lario S.R.L. | EUV collector system with enhanced EUV radiation collection |
DE102010038697B4 (de) * | 2010-07-30 | 2012-07-19 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Qualifizierung einer Optik einer Projektionsbelichtungsanlage für die Mikrolithographie |
US9594306B2 (en) | 2011-03-04 | 2017-03-14 | Asml Netherlands B.V. | Lithographic apparatus, spectral purity filter and device manufacturing method |
KR101793316B1 (ko) * | 2011-03-16 | 2017-11-02 | 케이엘에이-텐코 코포레이션 | 박막 스펙트럼 순도 필터 코팅을 갖는 영상 센서를 사용하는 euv 화학선 레티클 검사 시스템 |
JP5952399B2 (ja) * | 2011-08-05 | 2016-07-13 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源、リソグラフィ装置のための方法及びデバイス製造方法 |
WO2014020003A1 (en) * | 2012-08-03 | 2014-02-06 | Asml Netherlands B.V. | Lithographic apparatus and method of manufacturing a device |
WO2016128029A1 (en) * | 2015-02-10 | 2016-08-18 | Carl Zeiss Smt Gmbh | Euv multilayer mirror, optical system including a multilayer mirror and method of manufacturing a multilayer mirror |
JP6919699B2 (ja) | 2019-11-28 | 2021-08-18 | 凸版印刷株式会社 | 反射型フォトマスクブランク及び反射型フォトマスク |
JP7421411B2 (ja) | 2020-04-30 | 2024-01-24 | 株式会社トッパンフォトマスク | 反射型フォトマスクブランク及び反射型フォトマスク |
WO2021221123A1 (ja) | 2020-04-30 | 2021-11-04 | 凸版印刷株式会社 | 反射型フォトマスクブランク及び反射型フォトマスク |
JP2022054941A (ja) | 2020-09-28 | 2022-04-07 | 凸版印刷株式会社 | 反射型フォトマスクブランク及び反射型フォトマスク |
JP2022107355A (ja) | 2021-01-08 | 2022-07-21 | 株式会社トッパンフォトマスク | 反射型フォトマスクブランク及び反射型フォトマスク |
JP2022185356A (ja) | 2021-06-02 | 2022-12-14 | 株式会社トッパンフォトマスク | 反射型フォトマスクブランク及び反射型フォトマスク |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG139554A1 (en) | 2002-12-20 | 2008-02-29 | Asml Netherlands Bv | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
TWI264620B (en) | 2003-03-07 | 2006-10-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US8094288B2 (en) | 2004-05-11 | 2012-01-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100573334C (zh) | 2004-07-22 | 2009-12-23 | 皇家飞利浦电子股份有限公司 | 具有清洁装置的光学系统 |
US7453645B2 (en) * | 2004-12-30 | 2008-11-18 | Asml Netherlands B.V. | Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
US7518128B2 (en) * | 2006-06-30 | 2009-04-14 | Asml Netherlands B.V. | Lithographic apparatus comprising a cleaning arrangement, cleaning arrangement and method for cleaning a surface to be cleaned |
US7473908B2 (en) | 2006-07-14 | 2009-01-06 | Asml Netherlands B.V. | Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface |
DE102006054726B4 (de) * | 2006-11-21 | 2014-09-11 | Asml Netherlands B.V. | Verfahren zum Entfernen von Kontaminationen auf optischen Oberflächen und optische Anordnung |
NL2004787A (en) * | 2009-06-30 | 2011-01-04 | Asml Netherlands Bv | Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter. |
-
2009
- 2009-07-08 NL NL2003152A patent/NL2003152A1/nl not_active Application Discontinuation
- 2009-07-13 JP JP2011522453A patent/JP5732393B2/ja active Active
- 2009-07-13 CN CN200980131416.4A patent/CN102119366B/zh active Active
- 2009-07-13 US US13/058,788 patent/US8685632B2/en active Active
- 2009-07-13 KR KR1020117005827A patent/KR101626012B1/ko active IP Right Grant
- 2009-07-13 WO PCT/EP2009/058898 patent/WO2010018039A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US8685632B2 (en) | 2014-04-01 |
JP2011530823A (ja) | 2011-12-22 |
CN102119366B (zh) | 2015-04-22 |
NL2003152A1 (nl) | 2010-02-16 |
CN102119366A (zh) | 2011-07-06 |
WO2010018039A1 (en) | 2010-02-18 |
US20110143288A1 (en) | 2011-06-16 |
KR101626012B1 (ko) | 2016-05-31 |
KR20110058810A (ko) | 2011-06-01 |
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