JP5492891B2 - ミラー、リソグラフィ装置、およびデバイス製造方法 - Google Patents
ミラー、リソグラフィ装置、およびデバイス製造方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Description
本発明のさらに別の態様では、デバイス製造方法が提供される。このデバイス製造方法の一実施形態では、放射システムを用いてEUV放射投影ビームが提供される。投影ビームにパターンが形成される。次に、パターン付きビーム放射感応材料の層のターゲット部分上に投影される。放射システムにおいて、上述したミラーが用いられる。
放射ビームB(例えばUV放射)を調整するように構成された照明システム(イルミネータ)ILと、
パターニングデバイス(例えばマスク)MAを支持するように構成され、かつ特定のパラメータに従ってパターニングデバイスを正確に位置決めするように構成された第1ポジショナPMに接続されたサポート構造(例えばマスクテーブル)MTと、
基板(例えばレジストコートウェーハ)Wを保持するように構成され、かつ特定のパラメータに従って基板を正確に位置決めするように構成された第2ポジショナPWに接続された基板テーブル(例えばウェーハテーブル)WTと、
パターニングデバイスMAによって放射ビームBに付けられたパターンを基板Wのターゲット部分C(例えば1つ以上のダイを含む)上に投影するように構成された投影システム(例えば屈折投影レンズシステム)PSと、
を含む。
Claims (13)
- ミラー面を有するミラーであって、前記ミラー面に対して形成される1つ以上のくさび形要素が設けられた外面を有するプロファイルドコーティング層を含み、前記1つ以上のくさび形要素は10〜200mradの範囲内のくさび角を有し、前記プロファイルドコーティング層は一連の凝固小滴を含む、ミラー。
- 前記プロファイルドコーティング層は、前記ミラー面全体に亘って実質的に延在する、請求項1に記載のミラー。
- 前記プロファイルドコーティング層は、2つのくさび形要素を含む、請求項1または2に記載のミラー。
- 前記プロファイルドコーティング層の前記外面は湾曲している、請求項1、2、または3に記載のミラー。
- 前記小滴は前記ミラー面を濡らさない材料から形成される、請求項1〜4のいずれか一項に記載のミラー。
- 前記プロファイルドコーティング層を形成する材料は、Be、B、C、P、K、Ca、Sc、Br、Rb、Sr、Y、Zr、Ru、Nb、Mo、Ba、La、Ce、Pr、Pa、およびUからなる群から選択される、請求項1〜5のいずれか一項に記載のミラー。
- 前記プロファイルドコーティング層は、前記ミラーの表面全体に亘る実質的に規則的なマトリクスに配置される複数のくさび形要素を含む、請求項1〜6のいずれか一項に記載のミラー。
- 前記マトリクスは矩形または六角形である、請求項7に記載のミラー。
- 前記少なくとも1つのくさび形要素の形状は環状またはピラミッド形である、請求項1〜8のいずれか一項に記載のミラー。
- EUV放射投影ビームおよび更なる放射を供給するための放射システムを含むリソグラフィ投影装置であって、
前記放射システムは、請求項1から9のいずれか一項に記載のミラーを含む、リソグラフィ投影装置。 - 前記放射システムは、前記EUV放射の焦点を中間焦点上に合わせるように構成され、前記ミラーは、前記中間焦点から前記更なる放射を離れるように偏向させるように構成される、請求項10に記載のリソグラフィ投影装置。
- 前記マトリクスにおけるくさび形要素間の周期は、前記EUV放射の波長に少なくとも等しい、請求項7または8に従属した場合の請求項10または11に記載のリソグラフィ投影装置。
- デバイス製造方法であって、
放射システムを用いてEUV放射投影ビームを供給することと、
前記投影ビームにパターンを形成することと、
前記パターン付きビームを放射感応性材料の層のターゲット部分上に投影することと、
を含み、
前記放射システム内には、請求項1から9のいずれか一項に記載するミラーが設けられる、デバイス製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US8929608P | 2008-08-15 | 2008-08-15 | |
US61/089,296 | 2008-08-15 | ||
PCT/EP2009/059178 WO2010018046A1 (en) | 2008-08-15 | 2009-07-16 | Mirror, lithographic apparatus and device manufacturing method |
Publications (2)
Publication Number | Publication Date |
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JP2012500468A JP2012500468A (ja) | 2012-01-05 |
JP5492891B2 true JP5492891B2 (ja) | 2014-05-14 |
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JP2011522457A Active JP5492891B2 (ja) | 2008-08-15 | 2009-07-16 | ミラー、リソグラフィ装置、およびデバイス製造方法 |
Country Status (7)
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US (1) | US9285690B2 (ja) |
JP (1) | JP5492891B2 (ja) |
KR (1) | KR101617648B1 (ja) |
CN (1) | CN102105837B (ja) |
NL (1) | NL2003211A1 (ja) |
TW (1) | TWI418949B (ja) |
WO (1) | WO2010018046A1 (ja) |
Families Citing this family (7)
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US9571691B2 (en) * | 2012-04-27 | 2017-02-14 | Xerox Corporation | Imager array apparatus and systems |
DE102013107192A1 (de) * | 2013-07-08 | 2015-01-08 | Carl Zeiss Laser Optics Gmbh | Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich |
KR20230023066A (ko) * | 2016-04-25 | 2023-02-16 | 에이에스엠엘 네델란즈 비.브이. | Euv 리소그래피를 위한 멤브레인 |
DE102016213247A1 (de) | 2016-07-20 | 2017-05-18 | Carl Zeiss Smt Gmbh | Optisches Element, insbesondere Kollektorspiegel einer EUV-Lichtquelle einer mikrolithographischen Projektionsbelichtungsanlage |
WO2020234043A1 (en) * | 2019-05-21 | 2020-11-26 | Asml Netherlands B.V. | Mirror for use in a lithographic apparatus |
CN113219794B (zh) * | 2021-05-14 | 2022-06-21 | 中国科学院长春光学精密机械与物理研究所 | 一种具有能量回收功能的极紫外收集镜及其制备方法 |
DE102021212874A1 (de) * | 2021-11-16 | 2023-05-17 | Carl Zeiss Smt Gmbh | Verfahren zum Abscheiden einer Deckschicht, EUV-Lithographiesystem und optisches Element |
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WO2001079915A2 (en) * | 2000-04-18 | 2001-10-25 | University Of Manitoba | Diffraction grating in the whispering gallery mount |
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JP2006216917A (ja) * | 2005-02-07 | 2006-08-17 | Canon Inc | 照明光学系、露光装置およびデバイス製造方法 |
KR100697606B1 (ko) * | 2005-10-05 | 2007-03-22 | 주식회사 두산 | 곡면의 반사 거울면을 포함하는 광 도파로 및 그 제조 방법 |
US7773196B2 (en) | 2006-03-10 | 2010-08-10 | Nikon Corporation | Projection-optical systems and exposure apparatus comprising same |
EP3264444A1 (en) * | 2006-03-10 | 2018-01-03 | Nikon Corporation | Projection optical system, exposure apparatus and method for manufacuring semiconductor device |
EP1930771A1 (en) * | 2006-12-04 | 2008-06-11 | Carl Zeiss SMT AG | Projection objectives having mirror elements with reflective coatings |
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2009
- 2009-07-16 CN CN200980129219.9A patent/CN102105837B/zh active Active
- 2009-07-16 NL NL2003211A patent/NL2003211A1/nl not_active Application Discontinuation
- 2009-07-16 WO PCT/EP2009/059178 patent/WO2010018046A1/en active Application Filing
- 2009-07-16 US US13/002,854 patent/US9285690B2/en active Active
- 2009-07-16 KR KR1020117006046A patent/KR101617648B1/ko active IP Right Grant
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CN102105837B (zh) | 2014-04-30 |
TWI418949B (zh) | 2013-12-11 |
US9285690B2 (en) | 2016-03-15 |
TW201011477A (en) | 2010-03-16 |
CN102105837A (zh) | 2011-06-22 |
KR20110055652A (ko) | 2011-05-25 |
US20110228243A1 (en) | 2011-09-22 |
KR101617648B1 (ko) | 2016-05-03 |
NL2003211A1 (nl) | 2010-02-16 |
JP2012500468A (ja) | 2012-01-05 |
WO2010018046A1 (en) | 2010-02-18 |
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