JP5732393B2 - リソグラフィ装置、およびデバイス製造方法 - Google Patents

リソグラフィ装置、およびデバイス製造方法 Download PDF

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Publication number
JP5732393B2
JP5732393B2 JP2011522453A JP2011522453A JP5732393B2 JP 5732393 B2 JP5732393 B2 JP 5732393B2 JP 2011522453 A JP2011522453 A JP 2011522453A JP 2011522453 A JP2011522453 A JP 2011522453A JP 5732393 B2 JP5732393 B2 JP 5732393B2
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Japan
Prior art keywords
radiation
lithographic apparatus
substrate
hydrogen
projection system
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JP2011522453A
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English (en)
Japanese (ja)
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JP2011530823A (ja
JP2011530823A5 (enExample
Inventor
ケンペン，アントニウス
バニエ，バディム
イワノフ，ウラジミール
ループストラ，エリック
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ASML Netherlands BV
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ASML Netherlands BV
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Publication of JP2011530823A5 publication Critical patent/JP2011530823A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
JP2011522453A 2008-08-14 2009-07-13 リソグラフィ装置、およびデバイス製造方法 Active JP5732393B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13613008P 2008-08-14 2008-08-14
US13612908P 2008-08-14 2008-08-14
US61/136,130 2008-08-14
US61/136,129 2008-08-14
US19337308P 2008-11-21 2008-11-21
US61/193,373 2008-11-21
PCT/EP2009/058898 WO2010018039A1 (en) 2008-08-14 2009-07-13 Radiation source, lithographic apparatus and device manufacturing method

Publications (3)

Publication Number Publication Date
JP2011530823A JP2011530823A (ja) 2011-12-22
JP2011530823A5 JP2011530823A5 (enExample) 2012-08-30
JP5732393B2 true JP5732393B2 (ja) 2015-06-10

Family

ID=41110410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011522453A Active JP5732393B2 (ja) 2008-08-14 2009-07-13 リソグラフィ装置、およびデバイス製造方法

Country Status (6)

Country Link
US (1) US8685632B2 (enExample)
JP (1) JP5732393B2 (enExample)
KR (1) KR101626012B1 (enExample)
CN (1) CN102119366B (enExample)
NL (1) NL2003152A1 (enExample)
WO (1) WO2010018039A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587768B2 (en) * 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
DE102010038697B4 (de) * 2010-07-30 2012-07-19 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Qualifizierung einer Optik einer Projektionsbelichtungsanlage für die Mikrolithographie
US9594306B2 (en) * 2011-03-04 2017-03-14 Asml Netherlands B.V. Lithographic apparatus, spectral purity filter and device manufacturing method
KR101793316B1 (ko) * 2011-03-16 2017-11-02 케이엘에이-텐코 코포레이션 박막 스펙트럼 순도 필터 코팅을 갖는 영상 센서를 사용하는 ｅｕｖ 화학선 레티클 검사 시스템
KR20140052012A (ko) * 2011-08-05 2014-05-02 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치에 대한 방법 및 방사선 소스 및 디바이스 제조 방법
US9606445B2 (en) * 2012-08-03 2017-03-28 Asml Netherlands B.V. Lithographic apparatus and method of manufacturing a device
JP6731415B2 (ja) * 2015-02-10 2020-07-29 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖ多層ミラー、多層ミラーを含む光学系及び多層ミラーを製造する方法
CN114556225A (zh) * 2019-10-15 2022-05-27 Asml荷兰有限公司 光刻设备和器件制造方法
JP6919699B2 (ja) 2019-11-28 2021-08-18 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP7421411B2 (ja) 2020-04-30 2024-01-24 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
US20230143851A1 (en) 2020-04-30 2023-05-11 Toppan Photomask Co., Ltd. Reflective photomask blank and reflective photomask
JP7525354B2 (ja) 2020-09-28 2024-07-30 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7538050B2 (ja) 2021-01-08 2024-08-21 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7614949B2 (ja) 2021-06-02 2025-01-16 テクセンドフォトマスク株式会社 反射型フォトマスクブランク及び反射型フォトマスク
DE102022212168A1 (de) * 2022-11-16 2024-05-16 Carl Zeiss Smt Gmbh EUV-Optik-Modul für eine EUV-Projektionsbelichtungsanlage

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG139554A1 (en) * 2002-12-20 2008-02-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
TWI264620B (en) 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8094288B2 (en) 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
ATE555422T1 (de) 2004-07-22 2012-05-15 Koninkl Philips Electronics Nv Optisches system mit einer reinigungsanordnung
US7453645B2 (en) * 2004-12-30 2008-11-18 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
US7518128B2 (en) 2006-06-30 2009-04-14 Asml Netherlands B.V. Lithographic apparatus comprising a cleaning arrangement, cleaning arrangement and method for cleaning a surface to be cleaned
US7473908B2 (en) 2006-07-14 2009-01-06 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface
DE102006054726B4 (de) 2006-11-21 2014-09-11 Asml Netherlands B.V. Verfahren zum Entfernen von Kontaminationen auf optischen Oberflächen und optische Anordnung
NL2004787A (en) * 2009-06-30 2011-01-04 Asml Netherlands Bv Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter.

Also Published As

Publication number Publication date
JP2011530823A (ja) 2011-12-22
US8685632B2 (en) 2014-04-01
NL2003152A1 (nl) 2010-02-16
KR101626012B1 (ko) 2016-05-31
CN102119366A (zh) 2011-07-06
WO2010018039A1 (en) 2010-02-18
CN102119366B (zh) 2015-04-22
KR20110058810A (ko) 2011-06-01
US20110143288A1 (en) 2011-06-16

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