JP2010062560A5 - - Google Patents
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- Publication number
- JP2010062560A5 JP2010062560A5 JP2009197591A JP2009197591A JP2010062560A5 JP 2010062560 A5 JP2010062560 A5 JP 2010062560A5 JP 2009197591 A JP2009197591 A JP 2009197591A JP 2009197591 A JP2009197591 A JP 2009197591A JP 2010062560 A5 JP2010062560 A5 JP 2010062560A5
- Authority
- JP
- Japan
- Prior art keywords
- radiation source
- evaporation surface
- radiation
- plasma
- source according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000005855 radiation Effects 0.000 claims description 131
- 238000001704 evaporation Methods 0.000 claims description 78
- 230000008020 evaporation Effects 0.000 claims description 72
- 239000000463 material Substances 0.000 claims description 40
- 239000002245 particle Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000006227 byproduct Substances 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 47
- 238000000059 patterning Methods 0.000 description 43
- 239000007789 gas Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 13
- 239000006200 vaporizer Substances 0.000 description 12
- 238000001816 cooling Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000000446 fuel Substances 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 239000011859 microparticle Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011236 particulate material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000012464 large buffer Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13642808P | 2008-09-04 | 2008-09-04 | |
| US61/136,428 | 2008-09-04 | ||
| US13645108P | 2008-09-05 | 2008-09-05 | |
| US61/136,451 | 2008-09-05 | ||
| US19381408P | 2008-12-24 | 2008-12-24 | |
| US61/193,814 | 2008-12-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010062560A JP2010062560A (ja) | 2010-03-18 |
| JP2010062560A5 true JP2010062560A5 (enExample) | 2012-12-13 |
| JP5162546B2 JP5162546B2 (ja) | 2013-03-13 |
Family
ID=41396260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009197591A Active JP5162546B2 (ja) | 2008-09-04 | 2009-08-28 | 放射源及びリソグラフィ装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8373846B2 (enExample) |
| EP (1) | EP2161725B1 (enExample) |
| JP (1) | JP5162546B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2161725B1 (en) * | 2008-09-04 | 2015-07-08 | ASML Netherlands B.V. | Radiation source and related method |
| WO2010028899A1 (en) * | 2008-09-11 | 2010-03-18 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
| JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
| DE102010041298A1 (de) | 2010-09-24 | 2012-03-29 | Carl Zeiss Smt Gmbh | EUV-Mikrolithographie-Projektionsbelichtungsanlage mit einer Heizlichtquelle |
| WO2013127587A2 (en) * | 2012-02-27 | 2013-09-06 | Asml Netherlands B.V. | Source collector apparatus, lithographic apparatus and device manufacturing method |
| WO2014019803A1 (en) * | 2012-08-01 | 2014-02-06 | Asml Netherlands B.V. | Method and apparatus for generating radiation |
| WO2014121873A1 (en) * | 2013-02-08 | 2014-08-14 | Asml Netherlands B.V. | Radiation source for an euv optical lithographic apparatus, and lithographic apparatus comprising such a power source |
| EP3416180A1 (en) * | 2017-06-18 | 2018-12-19 | Excillum AB | X-ray source with temperature controller |
| US11272606B2 (en) | 2017-06-27 | 2022-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV light source and apparatus for lithography |
| KR102676898B1 (ko) * | 2017-10-26 | 2024-06-19 | 에이에스엠엘 네델란즈 비.브이. | 도전성 연료를 수용하는 장치 |
| US10959318B2 (en) * | 2018-01-10 | 2021-03-23 | Kla-Tencor Corporation | X-ray metrology system with broadband laser produced plasma illuminator |
| NL2021345A (en) * | 2018-04-12 | 2018-08-22 | Asml Netherlands Bv | Lithographic apparatus |
| CN117999857A (zh) * | 2021-09-15 | 2024-05-07 | Asml荷兰有限公司 | 用于主动加热euv光源中的基板的装置和方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3601089B2 (ja) * | 1994-12-08 | 2004-12-15 | 株式会社ニコン | Ｘ線装置 |
| US6815700B2 (en) * | 1997-05-12 | 2004-11-09 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
| NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
| US6614505B2 (en) | 2001-01-10 | 2003-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
| DE10219173A1 (de) * | 2002-04-30 | 2003-11-20 | Philips Intellectual Property | Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung |
| EP1394612B1 (en) | 2002-08-27 | 2008-10-08 | ASML Netherlands B.V. | Lithographic projection apparatus and reflector assembly for use in said apparatus |
| DE10251435B3 (de) * | 2002-10-30 | 2004-05-27 | Xtreme Technologies Gmbh | Strahlungsquelle zur Erzeugung von extrem ultravioletter Strahlung |
| US8945310B2 (en) * | 2003-05-22 | 2015-02-03 | Koninklijke Philips Electronics N.V. | Method and device for cleaning at least one optical component |
| EP1624467A3 (en) * | 2003-10-20 | 2007-05-30 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
| US7098994B2 (en) * | 2004-01-16 | 2006-08-29 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US8075732B2 (en) * | 2004-11-01 | 2011-12-13 | Cymer, Inc. | EUV collector debris management |
| US7355191B2 (en) * | 2004-11-01 | 2008-04-08 | Cymer, Inc. | Systems and methods for cleaning a chamber window of an EUV light source |
| DE102005020521B4 (de) * | 2005-04-29 | 2013-05-02 | Xtreme Technologies Gmbh | Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas |
| KR20080019708A (ko) * | 2005-06-14 | 2008-03-04 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 단락에 대한 방사원 보호 방법 |
| US7561247B2 (en) * | 2005-08-22 | 2009-07-14 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
| JP2007134166A (ja) * | 2005-11-10 | 2007-05-31 | Ushio Inc | 極端紫外光光源装置 |
| US7696493B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
| JP5086664B2 (ja) * | 2007-03-02 | 2012-11-28 | ギガフォトン株式会社 | 極端紫外光源装置 |
| JP5277496B2 (ja) * | 2007-04-27 | 2013-08-28 | ギガフォトン株式会社 | 極端紫外光源装置および極端紫外光源装置の光学素子汚染防止装置 |
| US8054446B2 (en) * | 2008-08-21 | 2011-11-08 | Carl Zeiss Smt Gmbh | EUV lithography apparatus and method for determining the contamination status of an EUV-reflective optical surface |
| EP2161725B1 (en) | 2008-09-04 | 2015-07-08 | ASML Netherlands B.V. | Radiation source and related method |
-
2009
- 2009-08-27 EP EP09167126.3A patent/EP2161725B1/en active Active
- 2009-08-28 JP JP2009197591A patent/JP5162546B2/ja active Active
- 2009-09-03 US US12/553,368 patent/US8373846B2/en active Active
-
2012
- 2012-11-27 US US13/686,633 patent/US8946661B2/en active Active
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