JP5162546B2 - 放射源及びリソグラフィ装置 - Google Patents

放射源及びリソグラフィ装置 Download PDF

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Publication number
JP5162546B2
JP5162546B2 JP2009197591A JP2009197591A JP5162546B2 JP 5162546 B2 JP5162546 B2 JP 5162546B2 JP 2009197591 A JP2009197591 A JP 2009197591A JP 2009197591 A JP2009197591 A JP 2009197591A JP 5162546 B2 JP5162546 B2 JP 5162546B2
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JP
Japan
Prior art keywords
radiation source
evaporation surface
radiation
plasma
source according
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JP2009197591A
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English (en)
Japanese (ja)
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JP2010062560A (ja
JP2010062560A5 (enExample
Inventor
ループストラ，エリック，ルーロフ
スウィンケルズ，ゲラルドス，ヒューベルタス，ペトラス，マリア
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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Publication of JP2010062560A publication Critical patent/JP2010062560A/ja
Publication of JP2010062560A5 publication Critical patent/JP2010062560A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
JP2009197591A 2008-09-04 2009-08-28 放射源及びリソグラフィ装置 Active JP5162546B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US13642808P 2008-09-04 2008-09-04
US61/136,428 2008-09-04
US13645108P 2008-09-05 2008-09-05
US61/136,451 2008-09-05
US19381408P 2008-12-24 2008-12-24
US61/193,814 2008-12-24

Publications (3)

Publication Number Publication Date
JP2010062560A JP2010062560A (ja) 2010-03-18
JP2010062560A5 JP2010062560A5 (enExample) 2012-12-13
JP5162546B2 true JP5162546B2 (ja) 2013-03-13

Family

ID=41396260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009197591A Active JP5162546B2 (ja) 2008-09-04 2009-08-28 放射源及びリソグラフィ装置

Country Status (3)

Country Link
US (2) US8373846B2 (enExample)
EP (1) EP2161725B1 (enExample)
JP (1) JP5162546B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2161725B1 (en) * 2008-09-04 2015-07-08 ASML Netherlands B.V. Radiation source and related method
WO2010028899A1 (en) * 2008-09-11 2010-03-18 Asml Netherlands B.V. Radiation source and lithographic apparatus
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
DE102010041298A1 (de) 2010-09-24 2012-03-29 Carl Zeiss Smt Gmbh EUV-Mikrolithographie-Projektionsbelichtungsanlage mit einer Heizlichtquelle
WO2013127587A2 (en) * 2012-02-27 2013-09-06 Asml Netherlands B.V. Source collector apparatus, lithographic apparatus and device manufacturing method
WO2014019803A1 (en) * 2012-08-01 2014-02-06 Asml Netherlands B.V. Method and apparatus for generating radiation
WO2014121873A1 (en) * 2013-02-08 2014-08-14 Asml Netherlands B.V. Radiation source for an euv optical lithographic apparatus, and lithographic apparatus comprising such a power source
EP3416180A1 (en) * 2017-06-18 2018-12-19 Excillum AB X-ray source with temperature controller
US11272606B2 (en) 2017-06-27 2022-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. EUV light source and apparatus for lithography
KR102676898B1 (ko) * 2017-10-26 2024-06-19 에이에스엠엘 네델란즈 비.브이. 도전성 연료를 수용하는 장치
US10959318B2 (en) * 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
NL2021345A (en) * 2018-04-12 2018-08-22 Asml Netherlands Bv Lithographic apparatus
CN117999857A (zh) * 2021-09-15 2024-05-07 Asml荷兰有限公司 用于主动加热euv光源中的基板的装置和方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3601089B2 (ja) * 1994-12-08 2004-12-15 株式会社ニコン Ｘ線装置
US6815700B2 (en) * 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
US6614505B2 (en) 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
DE10219173A1 (de) * 2002-04-30 2003-11-20 Philips Intellectual Property Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung
EP1394612B1 (en) 2002-08-27 2008-10-08 ASML Netherlands B.V. Lithographic projection apparatus and reflector assembly for use in said apparatus
DE10251435B3 (de) * 2002-10-30 2004-05-27 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung von extrem ultravioletter Strahlung
US8945310B2 (en) * 2003-05-22 2015-02-03 Koninklijke Philips Electronics N.V. Method and device for cleaning at least one optical component
EP1624467A3 (en) * 2003-10-20 2007-05-30 ASML Netherlands BV Lithographic apparatus and device manufacturing method
US7098994B2 (en) * 2004-01-16 2006-08-29 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US8075732B2 (en) * 2004-11-01 2011-12-13 Cymer, Inc. EUV collector debris management
US7355191B2 (en) * 2004-11-01 2008-04-08 Cymer, Inc. Systems and methods for cleaning a chamber window of an EUV light source
DE102005020521B4 (de) * 2005-04-29 2013-05-02 Xtreme Technologies Gmbh Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas
KR20080019708A (ko) * 2005-06-14 2008-03-04 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 단락에 대한 방사원 보호 방법
US7561247B2 (en) * 2005-08-22 2009-07-14 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
JP2007134166A (ja) * 2005-11-10 2007-05-31 Ushio Inc 極端紫外光光源装置
US7696493B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
JP5086664B2 (ja) * 2007-03-02 2012-11-28 ギガフォトン株式会社 極端紫外光源装置
JP5277496B2 (ja) * 2007-04-27 2013-08-28 ギガフォトン株式会社 極端紫外光源装置および極端紫外光源装置の光学素子汚染防止装置
US8054446B2 (en) * 2008-08-21 2011-11-08 Carl Zeiss Smt Gmbh EUV lithography apparatus and method for determining the contamination status of an EUV-reflective optical surface
EP2161725B1 (en) 2008-09-04 2015-07-08 ASML Netherlands B.V. Radiation source and related method

Also Published As

Publication number Publication date
EP2161725A2 (en) 2010-03-10
US20100053576A1 (en) 2010-03-04
US20130327955A1 (en) 2013-12-12
JP2010062560A (ja) 2010-03-18
EP2161725B1 (en) 2015-07-08
US8373846B2 (en) 2013-02-12
US8946661B2 (en) 2015-02-03
EP2161725A3 (en) 2012-06-13

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