JP2007150299A - プロセス画像誘起欠陥を検出する方法 - Google Patents
プロセス画像誘起欠陥を検出する方法 Download PDFInfo
- Publication number
- JP2007150299A JP2007150299A JP2006311022A JP2006311022A JP2007150299A JP 2007150299 A JP2007150299 A JP 2007150299A JP 2006311022 A JP2006311022 A JP 2006311022A JP 2006311022 A JP2006311022 A JP 2006311022A JP 2007150299 A JP2007150299 A JP 2007150299A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- inspection
- features
- defect inspection
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
Landscapes
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
【解決手段】製品マスクの回路設計を分析するとともに、製品マスクを模擬して、プロセス画像誘起欠陥を引き起こす可能性が高い製品マスク回路フィーチャを含む、1つ以上の分離したフィーチャまたは他のフィーチャを検査欠陥構造に組み込むように、従来の検査欠陥構造を変更する。
【選択図】図2
Description
Claims (6)
- 半導体製品の製造時に作り出されたプロセス画像誘起欠陥を検出する方法であって、
プロセス画像誘起不良を引き起こす可能性が高い回路の分離したフィーチャ、および他の回路フィーチャを判定するために、製品マスク回路を分析するステップと、
プロセス画像誘起不良を引き起こす可能性が高い前記分離したフィーチャ、または回路フィーチャのうちの1つ以上を含む欠陥検査構造を提供するステップと、
前記欠陥検査構造を前記製品マスク上に組み込むステップと、
画像化プロセスを実行するステップと、
電気的不良について前記欠陥検査構造を検査して、前記検査の結果に基づいて前記方法を続行するステップとを有する方法。 - 前記欠陥検査構造が、前記製品マスク回路の前記分析に基づいて変更された従来の対称的な欠陥検査構造である、請求項1に記載の方法。
- 前記従来の欠陥検査構造が、回路内の連続性を検査する蛇行形検査構造である、請求項2に記載の方法。
- 前記従来の欠陥検査構造が、回路短絡検査用のくし形構造である、請求項2に記載の方法。
- 前記従来の欠陥検査構造が、従来の結合型の、回路切断検査用の蛇行構造および回路短絡検査用のくし形構造である、請求項2に記載の方法。
- 前記欠陥検査構造が、前記製品マスクの切り溝または廃棄可能部分の中に製作される、請求項2に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/164555 | 2005-11-29 | ||
US11/164,555 US7176675B1 (en) | 2005-11-29 | 2005-11-29 | Proximity sensitive defect monitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007150299A true JP2007150299A (ja) | 2007-06-14 |
JP4939178B2 JP4939178B2 (ja) | 2012-05-23 |
Family
ID=37719674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006311022A Expired - Fee Related JP4939178B2 (ja) | 2005-11-29 | 2006-11-17 | プロセス画像誘起欠陥を検出する方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7176675B1 (ja) |
JP (1) | JP4939178B2 (ja) |
CN (1) | CN100459089C (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007079477A2 (en) * | 2006-01-03 | 2007-07-12 | Applied Materials Israel, Ltd | Apparatus and method for test structure inspection |
DE102006025351B4 (de) * | 2006-05-31 | 2013-04-04 | Globalfoundries Inc. | Teststruktur zur Überwachung von Leckströmen in einer Metallisierungsschicht und Verfahren |
DE102006051489B4 (de) * | 2006-10-31 | 2011-12-22 | Advanced Micro Devices, Inc. | Teststruktur für durch OPC-hervorgerufene Kurzschlüsse zwischen Leitungen in einem Halbleiterbauelement und Messverfahren |
US7915907B2 (en) * | 2007-06-25 | 2011-03-29 | Spansion Llc | Faulty dangling metal route detection |
US7491476B1 (en) | 2008-04-16 | 2009-02-17 | International Business Machines Corporation | Photomask electrical monitor for production photomasks |
JP2010182932A (ja) * | 2009-02-06 | 2010-08-19 | Renesas Electronics Corp | 半導体装置及び半導体装置の不良解析方法 |
US8443309B2 (en) | 2011-03-04 | 2013-05-14 | International Business Machines Corporation | Multifeature test pattern for optical proximity correction model verification |
CN103367323B (zh) * | 2012-03-31 | 2015-12-16 | 中芯国际集成电路制造(上海)有限公司 | 检测版图结构及检测方法 |
CN103779330A (zh) * | 2012-10-24 | 2014-05-07 | 上海华虹宏力半导体制造有限公司 | 监控金属工艺后短路或断路的测试结构 |
CN104183513B (zh) * | 2013-05-21 | 2018-05-04 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的检测方法 |
KR20200122673A (ko) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | 패턴 디자인 및 상기 패턴 디자인을 검사하기 위한 방법 |
CN114113179A (zh) * | 2021-10-14 | 2022-03-01 | 国网甘肃省电力公司电力科学研究院 | 一种快速判断镀锌钢构件原始缺陷的方法 |
CN115079509B (zh) * | 2022-08-22 | 2022-11-22 | 合肥晶合集成电路股份有限公司 | 一种版图图形的修正方法及系统 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11133586A (ja) * | 1997-08-22 | 1999-05-21 | Toshiba Corp | マスクパターン補正方法及び該補正方法に用いられる露光マスク |
JPH11317435A (ja) * | 1997-12-19 | 1999-11-16 | Siemens Ag | 装置能力測定による近接効果測定方法及び装置 |
US20030210058A1 (en) * | 2002-04-01 | 2003-11-13 | Rumsey Robert W. | Electrical print resolution test die |
JP2004228394A (ja) * | 2003-01-24 | 2004-08-12 | Hitachi High-Technologies Corp | 半導体ウェーハのパターン形状評価システム |
WO2005016054A1 (ja) * | 2003-08-19 | 2005-02-24 | Bronze Co., Ltd. | 安全傘 |
JP2005510058A (ja) * | 2001-11-14 | 2005-04-14 | ケーエルエー−テンカー・コーポレーション | プロセスに敏感なリソグラフィフィーチャ製造の方法および装置 |
JP2005191249A (ja) * | 2003-12-25 | 2005-07-14 | Semiconductor Leading Edge Technologies Inc | Teg配線構造及び半導体基板 |
JP2005217431A (ja) * | 2004-01-30 | 2005-08-11 | Asml Masktools Bv | 較正固有分解モデルを使用した製造信頼性検査及びリソグラフィ・プロセス検証方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3983479A (en) | 1975-07-23 | 1976-09-28 | International Business Machines Corporation | Electrical defect monitor structure |
US4144493A (en) | 1976-06-30 | 1979-03-13 | International Business Machines Corporation | Integrated circuit test structure |
US4546652A (en) * | 1981-12-22 | 1985-10-15 | Materials Research, Inc. | In-situ on-line structural failure detection system, its preparation and operation |
US4801869A (en) | 1987-04-27 | 1989-01-31 | International Business Machines Corporation | Semiconductor defect monitor for diagnosing processing-induced defects |
US6268717B1 (en) * | 1999-03-04 | 2001-07-31 | Advanced Micro Devices, Inc. | Semiconductor test structure with intentional partial defects and method of use |
US6362634B1 (en) | 2000-01-14 | 2002-03-26 | Advanced Micro Devices, Inc. | Integrated defect monitor structures for conductive features on a semiconductor topography and method of use |
EP1430316A1 (en) * | 2001-09-28 | 2004-06-23 | PDF Solutions, Inc. | Test structures for estimating dishing and erosion effects in copper damascene technology |
US6883159B2 (en) | 2002-03-19 | 2005-04-19 | Intel Corporation | Patterning semiconductor layers using phase shifting and assist features |
US6783904B2 (en) | 2002-05-17 | 2004-08-31 | Freescale Semiconductor, Inc. | Lithography correction method and device |
TWI229894B (en) * | 2002-09-05 | 2005-03-21 | Toshiba Corp | Mask defect inspecting method, semiconductor device manufacturing method, mask defect inspecting apparatus, generating method of defect influence map, and computer program product |
US6859746B1 (en) * | 2003-05-01 | 2005-02-22 | Advanced Micro Devices, Inc. | Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same |
US6917194B2 (en) * | 2003-08-27 | 2005-07-12 | International Business Machines Corporation | External verification of package processed linewidths and spacings in semiconductor packages |
JP2005083843A (ja) * | 2003-09-08 | 2005-03-31 | Dainippon Screen Mfg Co Ltd | 欠陥検出装置、クラスタ生成装置、欠陥分類装置、欠陥検出方法、クラスタ生成方法およびプログラム |
-
2005
- 2005-11-29 US US11/164,555 patent/US7176675B1/en not_active Expired - Fee Related
-
2006
- 2006-11-14 CN CNB2006101486084A patent/CN100459089C/zh active Active
- 2006-11-17 JP JP2006311022A patent/JP4939178B2/ja not_active Expired - Fee Related
- 2006-11-29 US US11/606,608 patent/US7486097B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11133586A (ja) * | 1997-08-22 | 1999-05-21 | Toshiba Corp | マスクパターン補正方法及び該補正方法に用いられる露光マスク |
JPH11317435A (ja) * | 1997-12-19 | 1999-11-16 | Siemens Ag | 装置能力測定による近接効果測定方法及び装置 |
JP2005510058A (ja) * | 2001-11-14 | 2005-04-14 | ケーエルエー−テンカー・コーポレーション | プロセスに敏感なリソグラフィフィーチャ製造の方法および装置 |
US20030210058A1 (en) * | 2002-04-01 | 2003-11-13 | Rumsey Robert W. | Electrical print resolution test die |
JP2004228394A (ja) * | 2003-01-24 | 2004-08-12 | Hitachi High-Technologies Corp | 半導体ウェーハのパターン形状評価システム |
WO2005016054A1 (ja) * | 2003-08-19 | 2005-02-24 | Bronze Co., Ltd. | 安全傘 |
JP2005191249A (ja) * | 2003-12-25 | 2005-07-14 | Semiconductor Leading Edge Technologies Inc | Teg配線構造及び半導体基板 |
JP2005217431A (ja) * | 2004-01-30 | 2005-08-11 | Asml Masktools Bv | 較正固有分解モデルを使用した製造信頼性検査及びリソグラフィ・プロセス検証方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4939178B2 (ja) | 2012-05-23 |
CN1975994A (zh) | 2007-06-06 |
US20070132445A1 (en) | 2007-06-14 |
CN100459089C (zh) | 2009-02-04 |
US7176675B1 (en) | 2007-02-13 |
US7486097B2 (en) | 2009-02-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4939178B2 (ja) | プロセス画像誘起欠陥を検出する方法 | |
US11120182B2 (en) | Methodology of incorporating wafer physical measurement with digital simulation for improving semiconductor device fabrication | |
US6901564B2 (en) | System and method for product yield prediction | |
US6949765B2 (en) | Padless structure design for easy identification of bridging defects in lines by passive voltage contrast | |
US20060131578A1 (en) | Structure of semiconductor substrate including test element group wiring | |
JP2011145263A (ja) | 検査装置および検査方法 | |
US20110116085A1 (en) | Defect detection recipe definition | |
CN113990770B (zh) | 一种晶圆检测方法及检测装置 | |
JP2005517297A (ja) | 静電放電誘導ウェーハ欠陥検査用の試験ウェーハおよび方法 | |
CN109075096B (zh) | 计算机辅助弱图案检测及鉴定系统 | |
US20160110859A1 (en) | Inspection method for contact by die to database | |
CN108073674B (zh) | 集成电路芯片中的系统缺陷的故障标识数据库的早期开发 | |
US8219964B2 (en) | Method for creating electrically testable patterns | |
US6972576B1 (en) | Electrical critical dimension measurement and defect detection for reticle fabrication | |
US6649932B2 (en) | Electrical print resolution test die | |
US9087879B2 (en) | Method of making semiconductor device with distinct multiple-patterned conductive tracks on a same level | |
JP2009192473A (ja) | 集積回路パターンの欠陥検査方法、及びその装置 | |
JP2007081293A (ja) | 検査方法、半導体装置の製造方法およびプログラム | |
JP2006100619A (ja) | 半導体装置の製造方法および半導体装置 | |
KR20000060456A (ko) | 리소그래피 공정으로부터 야기되는 불량 발생 지점 예측 방법 | |
JP2008172001A (ja) | 半導体装置の歩留まり算出方法及びコンピュータプログラム | |
US8803542B2 (en) | Method and apparatus for verifying stitching accuracy of stitched chips on a wafer | |
KR20090071737A (ko) | 웨이퍼 패턴 계측 데이터를 이용한 패턴 레이아웃 보정방법 | |
US20110114949A1 (en) | Test chiplets for devices | |
JP2004213030A (ja) | マスク欠陥検査方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090825 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110830 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110913 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110928 |
|
RD12 | Notification of acceptance of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7432 Effective date: 20110928 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20110929 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120207 |
|
RD14 | Notification of resignation of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7434 Effective date: 20120207 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120224 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |