JP2007150285A5 - - Google Patents
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- Publication number
- JP2007150285A5 JP2007150285A5 JP2006296403A JP2006296403A JP2007150285A5 JP 2007150285 A5 JP2007150285 A5 JP 2007150285A5 JP 2006296403 A JP2006296403 A JP 2006296403A JP 2006296403 A JP2006296403 A JP 2006296403A JP 2007150285 A5 JP2007150285 A5 JP 2007150285A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- metal
- silicon
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 14
- 229910052710 silicon Inorganic materials 0.000 claims 14
- 239000010703 silicon Substances 0.000 claims 14
- 229910052751 metal Inorganic materials 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 9
- 230000009977 dual effect Effects 0.000 claims 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- 238000009792 diffusion process Methods 0.000 claims 6
- 229910052735 hafnium Inorganic materials 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 3
- -1 hafnium aluminate Chemical class 0.000 claims 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- 230000002265 prevention Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- SLODBEHWNYQCRC-UHFFFAOYSA-N [La+3].[O-2].[Zr+4] Chemical compound [La+3].[O-2].[Zr+4] SLODBEHWNYQCRC-UHFFFAOYSA-N 0.000 claims 1
- MYHVOZRQLIUCAH-UHFFFAOYSA-N [Ru]=O.[Ca] Chemical compound [Ru]=O.[Ca] MYHVOZRQLIUCAH-UHFFFAOYSA-N 0.000 claims 1
- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 claims 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 claims 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 claims 1
- 229910001942 caesium oxide Inorganic materials 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 229910000457 iridium oxide Inorganic materials 0.000 claims 1
- LSYIMYXKHWXNBV-UHFFFAOYSA-N lanthanum(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[La+3].[Ti+4] LSYIMYXKHWXNBV-UHFFFAOYSA-N 0.000 claims 1
- QNZFKUWECYSYPS-UHFFFAOYSA-N lead zirconium Chemical compound [Zr].[Pb] QNZFKUWECYSYPS-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims 1
- UVGLBOPDEUYYCS-UHFFFAOYSA-N silicon zirconium Chemical compound [Si].[Zr] UVGLBOPDEUYYCS-UHFFFAOYSA-N 0.000 claims 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050112306A KR100647472B1 (ko) | 2005-11-23 | 2005-11-23 | 반도체 장치의 듀얼 게이트 구조물 및 그 형성 방법. |
| KR10-2005-0112306 | 2005-11-23 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007150285A JP2007150285A (ja) | 2007-06-14 |
| JP2007150285A5 true JP2007150285A5 (enrdf_load_stackoverflow) | 2009-12-17 |
| JP5020598B2 JP5020598B2 (ja) | 2012-09-05 |
Family
ID=37712874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006296403A Active JP5020598B2 (ja) | 2005-11-23 | 2006-10-31 | 半導体装置のデュアルゲート構造物及びその形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5020598B2 (enrdf_load_stackoverflow) |
| KR (1) | KR100647472B1 (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5139023B2 (ja) * | 2007-10-16 | 2013-02-06 | 株式会社東芝 | 半導体装置の製造方法 |
| KR101122756B1 (ko) * | 2008-06-30 | 2012-03-23 | 주식회사 하이닉스반도체 | 단층 확산방지막을 구비하는 반도체 장치 및 그 제조 방법 |
| JP5147588B2 (ja) * | 2008-08-04 | 2013-02-20 | パナソニック株式会社 | 半導体装置 |
| US20100052072A1 (en) * | 2008-08-28 | 2010-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual gate structure on a same chip for high-k metal gate technology |
| KR101556641B1 (ko) * | 2008-12-31 | 2015-10-02 | 삼성전자주식회사 | 듀얼 게이트 반도체 장치의 제조방법 |
| JP2012231123A (ja) * | 2011-04-15 | 2012-11-22 | Hitachi Kokusai Electric Inc | 半導体装置、半導体装置の製造方法、基板処理システムおよびプログラム |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831949A (ja) * | 1994-07-08 | 1996-02-02 | Ricoh Co Ltd | デュアルゲート構造ｃｍｏｓ半導体装置とその製造方法 |
| KR20020002175A (ko) * | 2000-06-29 | 2002-01-09 | 박종섭 | 반도체소자의 이중게이트 형성방법 |
| JP2002217313A (ja) * | 2000-11-30 | 2002-08-02 | Texas Instruments Inc | 金属及び対応する金属珪化物から形成した各ゲートを有する相補形トランジスタ |
| KR100379548B1 (ko) | 2000-12-21 | 2003-04-10 | 주식회사 하이닉스반도체 | Ｌｄｄ 구조를 갖는 반도체 장치의 제조방법 |
| US6518106B2 (en) * | 2001-05-26 | 2003-02-11 | Motorola, Inc. | Semiconductor device and a method therefor |
| JP3974507B2 (ja) * | 2001-12-27 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
| KR20040108488A (ko) * | 2003-06-17 | 2004-12-24 | 삼성전자주식회사 | 디램 소자의 듀얼 게이트 형성방법 |
| JP2006156807A (ja) * | 2004-11-30 | 2006-06-15 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2006165068A (ja) * | 2004-12-02 | 2006-06-22 | Sony Corp | 半導体装置およびその製造方法 |
-
2005
- 2005-11-23 KR KR1020050112306A patent/KR100647472B1/ko active Active
-
2006
- 2006-10-31 JP JP2006296403A patent/JP5020598B2/ja active Active
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