JP2007141970A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP2007141970A JP2007141970A JP2005330743A JP2005330743A JP2007141970A JP 2007141970 A JP2007141970 A JP 2007141970A JP 2005330743 A JP2005330743 A JP 2005330743A JP 2005330743 A JP2005330743 A JP 2005330743A JP 2007141970 A JP2007141970 A JP 2007141970A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- chip
- substrate
- semiconductor device
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 122
- 238000007747 plating Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 40
- 239000002344 surface layer Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 13
- 238000005304 joining Methods 0.000 claims description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/81895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
【解決手段】絶縁基材5上に複数の導体配線6が整列して設けられ、導体配線にその上面および両側面を覆うよう各々基板バンプ7が形成され、基板バンプに金属めっき72が施された配線基板と、配線基板上に実装された半導体チップ1とを備える。半導体チップの電極上にチップバンプ3が形成され、チップバンプと基板バンプの接合を介して半導体チップの電極と導体配線が接続されている。接合された部分の基板バンプのめっきの一部が剥けて、両バンプの接合面の外側へはみ出ている。
【選択図】図1
Description
図1は、本発明の実施の形態1における半導体装置を示す断面図である。図2(a)は、同半導体装置の要部、すなわちバンプを介した接続部分を示す断面図、(b)はその接合箇所におけるA部を拡大して示す断面図である。同図は、良好な状態で接続されている様子を示す。
本発明の実施の形態2における半導体装置の製造方法について説明する。
2 電極
3 チップバンプ
31 Ni基層
32 Au表面層
4 保護膜
5 フィルム基材
6 導体配線
7 基板バンプ
71 Cu基層
72 Au表面層
73 Auめっきのはみ出し部
8 封止樹脂
9 テープキャリア基板
10 フォトレジスト
11 露光マスク
11a 長孔状マスクパターン
12 長孔状パターン
13 接合部
14 バンプ
15 シェアツール
Claims (7)
- 絶縁基材上に複数の導体配線が整列して設けられ、前記導体配線にその上面および両側面を覆うよう各々基板バンプが形成され、前記基板バンプに金属めっきが施された配線基板と、前記配線基板上に実装された半導体チップとを備え、前記半導体チップの電極と前記導体配線が前記基板バンプを介して接続された半導体装置において、
前記半導体チップの電極上にチップバンプが形成され、
前記チップバンプと前記基板バンプの接合を介して前記半導体チップの電極と前記導体配線が接続されており、前記接合された部分の前記基板バンプのめっきの一部が剥けて、前記チップバンプと前記基板バンプの接合面の外側へはみ出ていることを特徴とする半導体装置。 - 前記チップバンプの平坦部領域が前記基板バンプとの接合領域より大きく、前記基板バンプは前記チップバンプより硬度が低い請求項1に記載の半導体装置。
- 前記接合面の外側へはみ出でた前記基板バンプのめっきの一部は、前記チップバンプのめっきと合金化している請求項1または2に記載の半導体装置。
- 前記基板バンプにおける前記接合面のめっき厚みは、前記接合面以外の部分のめっき厚みに比べ1/3から1/8の厚みになっている請求項1〜3のいずれか1項に記載の半導体装置。
- 絶縁基材上に複数の導体配線が整列して設けられ、前記導体配線にその上面および両側面を覆うよう各々基板バンプが形成され、前記基板バンプに金属めっきが施された配線基板上に、半導体チップを搭載し、前記半導体チップの電極と前記導体配線とを前記基板バンプを介して接続することにより前記半導体チップを実装する半導体装置の製造方法において、
前記半導体チップの電極上にチップバンプを形成する工程と、
前記チップバンプと前記基板バンプとを接合し、その際に、前記基板バンプの前記チップバンプとの接合面の表層めっきの一部が削れて周縁にはみ出るようにする工程とを備えたことを特徴とする半導体装置の製造方法。 - 前記基板バンプに前記チップバンプより硬度が低い材料を用い、前記チップバンプと前記基板バンプとを接合する際に、前記チップバンプを変形させずに、前記基板バンプの頭頂部を平坦に変形させて接合する請求項5に記載の半導体装置の製造方法。
- 前記チップバンプと前記基板バンプとを接合する際に、前記基板バンプにおける前記接合面のめっき厚みが、前記接合面以外の部分のめっき厚みより薄くなるように接合する請求項5または6に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005330743A JP4728782B2 (ja) | 2005-11-15 | 2005-11-15 | 半導体装置およびその製造方法 |
US11/553,766 US7629687B2 (en) | 2005-11-15 | 2006-10-27 | Semiconductor device and method for manufacturing the same |
CNA2006101425983A CN1967828A (zh) | 2005-11-15 | 2006-10-30 | 半导体装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005330743A JP4728782B2 (ja) | 2005-11-15 | 2005-11-15 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007141970A true JP2007141970A (ja) | 2007-06-07 |
JP4728782B2 JP4728782B2 (ja) | 2011-07-20 |
Family
ID=38039928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005330743A Expired - Fee Related JP4728782B2 (ja) | 2005-11-15 | 2005-11-15 | 半導体装置およびその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7629687B2 (ja) |
JP (1) | JP4728782B2 (ja) |
CN (1) | CN1967828A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017201678A (ja) * | 2016-04-27 | 2017-11-09 | セイコーエプソン株式会社 | 実装構造体、超音波デバイス、超音波探触子、超音波装置、及び電子機器 |
US11917922B2 (en) | 2016-04-27 | 2024-02-27 | Seiko Epson Corporation | Mounting structure, ultrasonic device, ultrasonic probe, ultrasonic apparatus, and electronic apparatus |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100699874B1 (ko) * | 2005-11-08 | 2007-03-28 | 삼성전자주식회사 | 삽입형 연결부를 갖는 비. 지. 에이 패키지 그 제조방법 및이를 포함하는 보드 구조 |
JP4728782B2 (ja) * | 2005-11-15 | 2011-07-20 | パナソニック株式会社 | 半導体装置およびその製造方法 |
US7495927B2 (en) * | 2007-01-24 | 2009-02-24 | Epson Imaging Devices Corporation | Mount structure, electro-optical device, and electronic apparatus |
US8868721B2 (en) | 2008-05-29 | 2014-10-21 | Red Hat, Inc. | Software appliance management using broadcast data |
US10657466B2 (en) | 2008-05-29 | 2020-05-19 | Red Hat, Inc. | Building custom appliances in a cloud-based network |
US8084348B2 (en) * | 2008-06-04 | 2011-12-27 | Oracle America, Inc. | Contact pads for silicon chip packages |
US9477570B2 (en) | 2008-08-26 | 2016-10-25 | Red Hat, Inc. | Monitoring software provisioning |
JP4853530B2 (ja) * | 2009-02-27 | 2012-01-11 | 株式会社豊田中央研究所 | 可動部を有するマイクロデバイス |
US8129220B2 (en) | 2009-08-24 | 2012-03-06 | Hong Kong Polytechnic University | Method and system for bonding electrical devices using an electrically conductive adhesive |
US8476757B2 (en) * | 2009-10-02 | 2013-07-02 | Northrop Grumman Systems Corporation | Flip chip interconnect method and design for GaAs MMIC applications |
US8407888B2 (en) | 2010-05-07 | 2013-04-02 | Oracle International Corporation | Method of assembling a circuit board assembly |
JP5475077B2 (ja) * | 2012-09-07 | 2014-04-16 | 日本特殊陶業株式会社 | 配線基板およびその製造方法 |
TWI514530B (zh) * | 2013-08-28 | 2015-12-21 | Via Tech Inc | 線路基板、半導體封裝結構及線路基板製程 |
JP2016162985A (ja) * | 2015-03-05 | 2016-09-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6433590B2 (ja) * | 2015-06-11 | 2018-12-05 | 三菱電機株式会社 | 電力用半導体装置の製造方法および電力用半導体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003037135A (ja) * | 2001-07-24 | 2003-02-07 | Hitachi Cable Ltd | 配線基板及びその製造方法 |
JP2003218148A (ja) * | 2002-01-18 | 2003-07-31 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2005064237A (ja) * | 2003-08-12 | 2005-03-10 | Fujitsu Ltd | 半導体装置とその製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2833326B2 (ja) * | 1992-03-03 | 1998-12-09 | 松下電器産業株式会社 | 電子部品実装接続体およびその製造方法 |
US5616520A (en) * | 1992-03-30 | 1997-04-01 | Hitachi, Ltd. | Semiconductor integrated circuit device and fabrication method thereof |
US5427301A (en) * | 1994-05-06 | 1995-06-27 | Ford Motor Company | Ultrasonic flip chip process and apparatus |
JP3310499B2 (ja) * | 1995-08-01 | 2002-08-05 | 富士通株式会社 | 半導体装置 |
US6461890B1 (en) * | 1996-12-27 | 2002-10-08 | Rohm Co., Ltd. | Structure of semiconductor chip suitable for chip-on-board system and methods of fabricating and mounting the same |
JPH10303252A (ja) * | 1997-04-28 | 1998-11-13 | Nec Kansai Ltd | 半導体装置 |
KR20000057810A (ko) * | 1999-01-28 | 2000-09-25 | 가나이 쓰토무 | 반도체 장치 |
JP2000223653A (ja) * | 1999-02-02 | 2000-08-11 | Rohm Co Ltd | チップ・オン・チップ構造の半導体装置およびそれに用いる半導体チップ |
US6965166B2 (en) * | 1999-02-24 | 2005-11-15 | Rohm Co., Ltd. | Semiconductor device of chip-on-chip structure |
JP2000306957A (ja) * | 1999-04-21 | 2000-11-02 | Tdk Corp | 超音波ボンディング実装方法及び超音波ボンディング装置 |
JP2001015553A (ja) * | 1999-06-29 | 2001-01-19 | Rohm Co Ltd | 半導体装置の製造方法 |
JP4338834B2 (ja) * | 1999-08-06 | 2009-10-07 | 日本テキサス・インスツルメンツ株式会社 | 超音波振動を用いた半導体チップの実装方法 |
JP3723453B2 (ja) * | 2000-09-12 | 2005-12-07 | ローム株式会社 | 半導体装置 |
JP2002184807A (ja) * | 2000-12-11 | 2002-06-28 | Mitsubishi Electric Corp | 半導体装置の製造方法および製造装置、並びにその製造方法で製造される半導体装置 |
JP2002261111A (ja) * | 2001-03-06 | 2002-09-13 | Texas Instr Japan Ltd | 半導体装置及びバンプ形成方法 |
JP3520414B2 (ja) * | 2001-04-10 | 2004-04-19 | 株式会社村田製作所 | 弾性表面波装置およびその製造方法、通信装置 |
US6838316B2 (en) * | 2002-03-06 | 2005-01-04 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method using ultrasonic flip chip bonding technique |
US6821813B2 (en) * | 2002-12-19 | 2004-11-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process for bonding solder bumps to a substrate |
JP3855947B2 (ja) * | 2003-03-10 | 2006-12-13 | 株式会社村田製作所 | 電子部品装置およびその製造方法 |
JP3565835B1 (ja) * | 2003-04-28 | 2004-09-15 | 松下電器産業株式会社 | 配線基板およびその製造方法ならびに半導体装置およびその製造方法 |
KR100604334B1 (ko) * | 2003-11-25 | 2006-08-08 | (주)케이나인 | 플립칩 패키징 공정에서 접합력이 향상된 플립칩 접합 방법 |
JP2005159061A (ja) * | 2003-11-27 | 2005-06-16 | Fujitsu Ltd | 超音波ツール及び超音波接合装置 |
JP4171492B2 (ja) * | 2005-04-22 | 2008-10-22 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP4728782B2 (ja) * | 2005-11-15 | 2011-07-20 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP4863746B2 (ja) * | 2006-03-27 | 2012-01-25 | 富士通株式会社 | 半導体装置およびその製造方法 |
-
2005
- 2005-11-15 JP JP2005330743A patent/JP4728782B2/ja not_active Expired - Fee Related
-
2006
- 2006-10-27 US US11/553,766 patent/US7629687B2/en not_active Expired - Fee Related
- 2006-10-30 CN CNA2006101425983A patent/CN1967828A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003037135A (ja) * | 2001-07-24 | 2003-02-07 | Hitachi Cable Ltd | 配線基板及びその製造方法 |
JP2003218148A (ja) * | 2002-01-18 | 2003-07-31 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2005064237A (ja) * | 2003-08-12 | 2005-03-10 | Fujitsu Ltd | 半導体装置とその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017201678A (ja) * | 2016-04-27 | 2017-11-09 | セイコーエプソン株式会社 | 実装構造体、超音波デバイス、超音波探触子、超音波装置、及び電子機器 |
US11581478B2 (en) | 2016-04-27 | 2023-02-14 | Seiko Epson Corporation | Mounting structure, ultrasonic device, ultrasonic probe, ultrasonic apparatus, and electronic apparatus |
US11917922B2 (en) | 2016-04-27 | 2024-02-27 | Seiko Epson Corporation | Mounting structure, ultrasonic device, ultrasonic probe, ultrasonic apparatus, and electronic apparatus |
Also Published As
Publication number | Publication date |
---|---|
US20070108627A1 (en) | 2007-05-17 |
JP4728782B2 (ja) | 2011-07-20 |
US7629687B2 (en) | 2009-12-08 |
CN1967828A (zh) | 2007-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4728782B2 (ja) | 半導体装置およびその製造方法 | |
US6593648B2 (en) | Semiconductor device and method of making the same, circuit board and electronic equipment | |
JP2004343030A (ja) | 配線回路基板とその製造方法とその配線回路基板を備えた回路モジュール | |
JP2005079581A (ja) | テープ基板、及びテープ基板を用いた半導体チップパッケージ、及び半導体チップパッケージを用いたlcd装置 | |
JP4171492B2 (ja) | 半導体装置およびその製造方法 | |
US5883432A (en) | Connection structure between electrode pad on semiconductor device and printed pattern on printed circuit board | |
JP2000228006A (ja) | ボンディングパットおよびバンプを用いた接合体、および磁気ヘッド装置 | |
JP2001223287A (ja) | インターポーザーの製造方法 | |
JP2001257304A (ja) | 半導体装置およびその実装方法 | |
JP3664171B2 (ja) | 半導体装置の製造方法及び半導体装置の製造装置 | |
JP2974840B2 (ja) | 半導体素子の実装方法 | |
JP2652222B2 (ja) | 電子部品搭載用基板 | |
JP3061017B2 (ja) | 集積回路装置の実装構造およびその実装方法 | |
JPH10340923A (ja) | 半導体装置の接続方法 | |
JP2000299399A (ja) | 半導体装置 | |
JP2005079499A (ja) | 半導体装置、半導体モジュール、電子機器および半導体装置の製造方法 | |
JP2005123223A (ja) | 配線板及び半導体装置、ならびに配線板の製造方法 | |
JPH0547848A (ja) | 半導体装置 | |
JP2004119700A (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
JP2007035942A (ja) | 半導体装置の製造方法 | |
JPH10303254A (ja) | 半導体素子搭載用テープキャリア、およびそのテープキャリアを使用した半導体装置 | |
JPH0613434A (ja) | 半導体装置用フィルムキャリア | |
JP2001093942A (ja) | 半導体装置、電子装置、配線基板及び半導体装置の製造方法 | |
JPH1092870A (ja) | 配線接続構造及びそれを用いた電子部品 | |
JP2004063568A (ja) | 半導体装置及びその製造方法、電子デバイス並びに電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080729 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110111 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110118 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110317 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110407 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110415 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140422 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |