JP2007134691A5 - - Google Patents
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- Publication number
- JP2007134691A5 JP2007134691A5 JP2006276945A JP2006276945A JP2007134691A5 JP 2007134691 A5 JP2007134691 A5 JP 2007134691A5 JP 2006276945 A JP2006276945 A JP 2006276945A JP 2006276945 A JP2006276945 A JP 2006276945A JP 2007134691 A5 JP2007134691 A5 JP 2007134691A5
- Authority
- JP
- Japan
- Prior art keywords
- copper
- film
- gate
- alloy
- gate line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010408 film Substances 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 14
- 229910052802 copper Inorganic materials 0.000 claims 10
- 239000010949 copper Substances 0.000 claims 10
- 239000010409 thin film Substances 0.000 claims 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 7
- 229910001182 Mo alloy Inorganic materials 0.000 claims 6
- 230000004888 barrier function Effects 0.000 claims 6
- -1 copper nitride Chemical class 0.000 claims 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 2
- 239000005751 Copper oxide Substances 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- 229910016027 MoTi Inorganic materials 0.000 claims 2
- 229910000431 copper oxide Inorganic materials 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050106274A KR20070049278A (ko) | 2005-11-08 | 2005-11-08 | 배선, 이를 포함하는 박막 트랜지스터 기판과 그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007134691A JP2007134691A (ja) | 2007-05-31 |
| JP2007134691A5 true JP2007134691A5 (enExample) | 2009-10-15 |
Family
ID=38083037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006276945A Withdrawn JP2007134691A (ja) | 2005-11-08 | 2006-10-10 | 配線、これを含む薄膜トランジスタ基板、及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20070122649A1 (enExample) |
| JP (1) | JP2007134691A (enExample) |
| KR (1) | KR20070049278A (enExample) |
| CN (1) | CN1964067A (enExample) |
| TW (1) | TW200727491A (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101199533B1 (ko) * | 2005-06-22 | 2012-11-09 | 삼성디스플레이 주식회사 | 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 |
| US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
| JP5214125B2 (ja) * | 2006-09-11 | 2013-06-19 | 三星ディスプレイ株式會社 | 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法 |
| JP5412026B2 (ja) * | 2006-09-11 | 2014-02-12 | 三星ディスプレイ株式會社 | 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法 |
| KR101326128B1 (ko) * | 2006-09-29 | 2013-11-06 | 삼성디스플레이 주식회사 | 표시 장치용 배선, 식각액, 박막 트랜지스터 표시판 및 그제조 방법 |
| JP5510769B2 (ja) * | 2007-08-24 | 2014-06-04 | 日立金属株式会社 | Cu系配線膜の成膜方法 |
| KR101102891B1 (ko) * | 2007-09-04 | 2012-01-10 | 삼성전자주식회사 | 배선구조 및 이를 이용한 박막 트랜지스터 |
| TWI360708B (en) | 2007-12-17 | 2012-03-21 | Au Optronics Corp | Pixel structure, display panel, elecro-optical app |
| KR101296654B1 (ko) | 2007-12-26 | 2013-08-14 | 엘지디스플레이 주식회사 | 구리 배선, 이를 이용한 평판 표시 장치, 및 그 구리배선의 형성 방법 |
| CN101217151B (zh) * | 2008-01-03 | 2011-12-07 | 友达光电股份有限公司 | 像素结构、显示面板、光电装置及其制造方法 |
| EP2079099B1 (en) * | 2008-01-11 | 2015-09-16 | Imec | Method and apparatus for preventing galvanic corrosion in semiconductor processing |
| JP5303155B2 (ja) * | 2008-02-20 | 2013-10-02 | 株式会社ジャパンディスプレイ | 液晶表示装置とその製造方法 |
| KR101542221B1 (ko) * | 2008-09-26 | 2015-08-06 | 삼성디스플레이 주식회사 | 표시기판, 이의 제조 방법, 및 이를 갖는 표시장치 |
| KR20180137606A (ko) * | 2008-10-24 | 2018-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| EP2312633A1 (en) * | 2009-10-15 | 2011-04-20 | Applied Materials, Inc. | Method and installation for producing a semiconductor device, and semiconductor device |
| KR101691560B1 (ko) * | 2009-11-24 | 2017-01-10 | 삼성디스플레이 주식회사 | 표시기판 및 이의 제조방법 |
| US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
| US8449818B2 (en) * | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
| EP2426720A1 (en) * | 2010-09-03 | 2012-03-07 | Applied Materials, Inc. | Staggered thin film transistor and method of forming the same |
| EP2707520B1 (en) | 2011-05-10 | 2018-05-02 | H.C. STARCK, Inc. | Composite target |
| KR101934977B1 (ko) * | 2011-08-02 | 2019-03-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| CN102983101B (zh) * | 2011-08-04 | 2015-06-17 | 东友精细化工有限公司 | 液晶显示装置用阵列基板的制造方法 |
| KR20130043063A (ko) * | 2011-10-19 | 2013-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| CN103229301B (zh) * | 2011-11-29 | 2017-02-08 | 株式会社日本有机雷特显示器 | 薄膜晶体管以及薄膜晶体管的制造方法 |
| CN102664193A (zh) * | 2012-04-01 | 2012-09-12 | 京东方科技集团股份有限公司 | 导电结构及制造方法、薄膜晶体管、阵列基板和显示装置 |
| KR101968115B1 (ko) * | 2012-04-23 | 2019-08-13 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
| US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
| KR102069158B1 (ko) * | 2012-05-10 | 2020-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법 |
| US20140014948A1 (en) * | 2012-07-12 | 2014-01-16 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
| WO2014067463A1 (zh) * | 2012-11-02 | 2014-05-08 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置和阻挡层 |
| KR102164308B1 (ko) * | 2013-12-30 | 2020-10-12 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그를 이용한 액정표시장치 |
| KR20150087617A (ko) * | 2014-01-22 | 2015-07-30 | 삼성디스플레이 주식회사 | 표시 기판용 박막 트랜지스터, 표시 기판 및 표시 기판의 제조 방법 |
| RU2585112C2 (ru) * | 2014-01-22 | 2016-05-27 | Алексей Владиславович Сагалович | Композиционное покрытие для алюминия или его сплавов |
| CN104332476B (zh) * | 2014-09-18 | 2017-05-31 | 京东方科技集团股份有限公司 | 单元像素、阵列基板、显示装置及其制造方法 |
| KR102378773B1 (ko) * | 2014-11-05 | 2022-03-28 | 닛샤 가부시키가이샤 | 전기 배선 부재의 제조 방법 및 전기 배선 부재 |
| TWI671913B (zh) * | 2018-05-02 | 2019-09-11 | 友達光電股份有限公司 | 半導體裝置及其製造方法 |
| CN110233154B (zh) * | 2018-11-26 | 2021-07-30 | 友达光电股份有限公司 | 元件基板 |
| CN110571276A (zh) * | 2019-08-05 | 2019-12-13 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管及其制备方法 |
| CN111403336A (zh) * | 2020-03-31 | 2020-07-10 | 成都中电熊猫显示科技有限公司 | 阵列基板、显示面板以及阵列基板的制作方法 |
| CN111965884A (zh) * | 2020-08-12 | 2020-11-20 | Tcl华星光电技术有限公司 | 液晶面板用黑色矩阵和液晶面板 |
| CN113078107A (zh) * | 2021-06-04 | 2021-07-06 | 苏州华星光电技术有限公司 | 一种阵列基板的制备方法、阵列基板及显示面板 |
| CN118284842A (zh) | 2022-10-31 | 2024-07-02 | 京东方科技集团股份有限公司 | 线路板、发光基板、背光模组及显示装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6344288B1 (en) * | 1998-02-24 | 2002-02-05 | Asahi Glass Company, Limited | Light absorption antireflective body and method of producing the same |
| US6042929A (en) * | 1998-03-26 | 2000-03-28 | Alchemia, Inc. | Multilayer metalized composite on polymer film product and process |
| JP3916334B2 (ja) * | 1999-01-13 | 2007-05-16 | シャープ株式会社 | 薄膜トランジスタ |
| JP3362008B2 (ja) * | 1999-02-23 | 2003-01-07 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
| US6111619A (en) * | 1999-05-27 | 2000-08-29 | Sharp Laboratories Of America, Inc. | Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array |
| KR100390951B1 (ko) * | 1999-12-29 | 2003-07-10 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 배선 형성 방법 |
| TW451447B (en) * | 1999-12-31 | 2001-08-21 | Samsung Electronics Co Ltd | Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same |
| JP5173101B2 (ja) * | 2000-05-15 | 2013-03-27 | エイエスエム インターナショナル エヌ.ヴェー. | 集積回路の製造方法 |
| JP4535629B2 (ja) * | 2001-02-21 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6693356B2 (en) * | 2002-03-27 | 2004-02-17 | Texas Instruments Incorporated | Copper transition layer for improving copper interconnection reliability |
| JP2004172150A (ja) * | 2002-11-15 | 2004-06-17 | Nec Kagoshima Ltd | 積層構造配線の製造方法 |
| JP5412026B2 (ja) * | 2006-09-11 | 2014-02-12 | 三星ディスプレイ株式會社 | 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法 |
| JP5214125B2 (ja) * | 2006-09-11 | 2013-06-19 | 三星ディスプレイ株式會社 | 配線構造と配線形成方法及び薄膜トランジスタ基板とその製造方法 |
-
2005
- 2005-11-08 KR KR1020050106274A patent/KR20070049278A/ko not_active Ceased
-
2006
- 2006-10-10 JP JP2006276945A patent/JP2007134691A/ja not_active Withdrawn
- 2006-11-07 CN CNA2006101385505A patent/CN1964067A/zh active Pending
- 2006-11-08 TW TW095141362A patent/TW200727491A/zh unknown
- 2006-11-08 US US11/595,395 patent/US20070122649A1/en not_active Abandoned
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