JP2007116165A - 半導体照明装置のためのパッケージ構造体およびその製造方法 - Google Patents
半導体照明装置のためのパッケージ構造体およびその製造方法 Download PDFInfo
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- JP2007116165A JP2007116165A JP2006284812A JP2006284812A JP2007116165A JP 2007116165 A JP2007116165 A JP 2007116165A JP 2006284812 A JP2006284812 A JP 2006284812A JP 2006284812 A JP2006284812 A JP 2006284812A JP 2007116165 A JP2007116165 A JP 2007116165A
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- 238000000034 method Methods 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000005286 illumination Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 238000001039 wet etching Methods 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004073 vulcanization Methods 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000005304 joining Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
【解決手段】 互いに反対になった第1の表面と第2の表面を有するシリコン基板100であって、第1の表面が反射空洞を有し、第2の表面が反射空洞に到達する少なくとも2つの電極アクセスホールを有するものであるシリコン基板100と、シリコン基板100に重畳された第1の絶縁層110と、反射空洞に成膜された反射層120と、反射層120上に配置された第2の絶縁層130と、2つの電極パッドとして働きかつ反射層120から電気的に隔離された、電極アクセスホールに配置された第1の導電層と、第2の表面の下で電極アクセスホールに配置された第2の導電層とを備える。
【選択図】図11
Description
102 反射空洞
104 電極アクセスホール
110 第1の絶縁層
120 反射層
130 第2の絶縁層
140−1、140−2 頂部電極
150−1、150−2 底部電極
160 LED
170 エポキシ樹脂
Claims (5)
- 半導体照明装置のためのパッケージ構造であって、
互いに反対になった第1の表面と第2の表面を有するシリコン基板であって、前記第1の表面が反射空洞を有し、前記第2の表面が前記反射空洞に到達する少なくとも2つの電極アクセスホールを有するものであるシリコン基板、
前記シリコン基板に重畳された第1の絶縁層、
前記反射空洞に成膜された反射層、
前記反射層上に配置された第2の絶縁層、
2つの電極パッドとして働きかつ前記反射層から電気的に隔離された、前記電極アクセスホールに配置された第1の導電層、および
前記第2の表面の下で前記電極アクセスホールに配置された第2の導電層、
を備えたパッケージ構造。 - 前記第1の導電層および前記第2の導電層が電気的に接続されていることを特徴とする請求項1記載のパッケージ構造。
- 前記反射空洞に到達する2つの電極アクセスホールを前記第2の表面にさらに含み、前記第1の導電層が4つの電極パッドとして働き、前記第2の導電層が、前記4つの電極アクセスホール内に配置され、前記第1の導電層と電気的に接続されていることを特徴とする請求項1記載のパッケージ構造。
- 半導体照明装置のためのパッケージ構造を製造する方法であって、
シリコン基板を提供する工程、
前記シリコン基板の第1の表面にウェットエッチングにより反射空洞を形成する工程、
前記シリコン基板の第2の表面にウェットエッチングにより少なくとも2つの電極アクセスホールを形成する工程であって、前記電極アクセスホールは前記シリコン基板を通り前記反射空洞まで到達し、前記第2の表面は前記第1の表面とは反対にある工程、
前記シリコン基板に第1の絶縁層を重畳させる工程、
前記反射空洞に反射層を重畳させる工程、
前記反射層上に第2の絶縁層を重畳させる工程、
前記電極アクセスホールに第1の導電層を形成する工程であって、前記第1の導電層は、2つの電極パッドとして働き、前記反射層から電気的に隔離されている工程、および
前記第2の表面下で前記少なくとも2つの電極アクセスホールの内部に第2の導電層を形成する工程、
を有してなる方法。 - 前記反射層が、銀、アルミニウム、金またはスズから製造されていることを特徴とする請求項4記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94136845A TWI292962B (en) | 2005-10-21 | 2005-10-21 | Package structure for a solid-state lighting device and method of fabricating the same |
TW096139780A TWI394300B (zh) | 2007-10-24 | 2007-10-24 | 光電元件之封裝結構及其製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007116165A true JP2007116165A (ja) | 2007-05-10 |
JP4658897B2 JP4658897B2 (ja) | 2011-03-23 |
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JP2006284812A Expired - Fee Related JP4658897B2 (ja) | 2005-10-21 | 2006-10-19 | 半導体照明装置のためのパッケージ構造体およびその製造方法 |
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US (3) | US7719099B2 (ja) |
JP (1) | JP4658897B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009105409A (ja) * | 2007-10-24 | 2009-05-14 | Advanced Optoelectronic Technology Inc | 光電デバイスのパッケージ構造及びその製造方法 |
JP2010129870A (ja) * | 2008-11-28 | 2010-06-10 | Stanley Electric Co Ltd | 半導体発光装置及びその製造方法 |
JP2010219377A (ja) * | 2009-03-18 | 2010-09-30 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP2019021919A (ja) * | 2017-07-11 | 2019-02-07 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2020532851A (ja) * | 2017-09-01 | 2020-11-12 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2020533778A (ja) * | 2017-09-12 | 2020-11-19 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
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KR20100094246A (ko) * | 2009-02-18 | 2010-08-26 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
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JP5343831B2 (ja) * | 2009-04-16 | 2013-11-13 | 日亜化学工業株式会社 | 発光装置 |
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US20090029494A1 (en) | 2009-01-29 |
US20090078956A1 (en) | 2009-03-26 |
US7994628B2 (en) | 2011-08-09 |
US7989237B2 (en) | 2011-08-02 |
US20070090510A1 (en) | 2007-04-26 |
US7719099B2 (en) | 2010-05-18 |
JP4658897B2 (ja) | 2011-03-23 |
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