JP2008034806A - 気泡なくレンズを配置するための内部メニスカスを備えた発光ダイオードパッケージ要素 - Google Patents
気泡なくレンズを配置するための内部メニスカスを備えた発光ダイオードパッケージ要素 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】本発明に係る発光ダイオードパッケージを製作する方法は、LEDチップを提供するステップと、LEDチップの少なくとも一部分を、ある曲率半径をもつカプセル化材料で覆うステップとを含む。少なくとも一部分がカプセル化材料よりも大きな曲率半径をもつ底面を有する光学素子を、カプセル化材料と接触させる。次いで、光学素子がLEDチップにさらに近づけられ、前記カプセル化材料との間の接触領域が拡大され、カプセル化材料が硬化される。メニスカス保持特徴を有するメニスカスリングが、基板上にLEDチップを囲んで存在する。メニスカス保持特徴が、カプセル化材料の接触面の縁部を画定する。少なくとも一部分が凹状の底面を有する光学素子が、その凹状部分でLEDチップを覆った状態で基板上に配置される。
【選択図】図1
Description
(Sr、Ca、Ba)(Al、Ga)2S4:Eu2+
Ba2(Mg、Zn)Si2O7:Eu2+
Gd0.46Sr0.31Al1.23OxF1.38:Eu2+ 0.06
(Ba1-x-ySrxCay)SiO4:Eu
Ba2SiO4:Eu2+
赤色
Lu2O3:Eu3+
(Sr2-xLax)(Ce1-xEux)O4
Sr2Ce1-xEuxO4
Sr2-xEuxCeO4
SrTiO3:Pr3+、Ga3+
CaAlSiN3:Eu2+
Sr2Si5N8:Eu2+
Claims (13)
- 発光ダイオード(LED)パッケージを製作する方法であって、
LEDチップを提供するステップと、
前記LEDチップの少なくとも一部分を、ある曲率半径をもつ接触用液体カプセル化材料で覆うステップと、
少なくとも一部分が前記液体カプセル化材料よりも大きな曲率半径をもつ底面を有する光学素子を提供するステップと、
前記光学素子の前記より大きな曲率半径部分を、前記液体カプセル化材料と接触させるステップと、
前記光学素子を、前記LEDチップにさらに近づけて、前記光学素子と前記液体カプセル化材料との間の接触領域を拡大させるステップと、
前記液体カプセル化材料を硬化させるステップと
を含むことを特徴とする方法。 - 前記接触領域は、前記光学素子が前記LEDチップにさらに近づくにつれて外に大きくなり、前記液体カプセル化材料と前記光学素子との間の空気の閉じ込めが低減されることを特徴とする請求項1に記載の方法。
- 前記光学素子は、実質的に半球のレンズを備え、前記半球レンズは、前記接触用液体カプセル化材料よりも大きな曲率半径をもつ凹状部分を備えた底面を有することを特徴とする請求項1に記載の方法。
- 前記光学素子の前記より大きな曲率半径部分は、前記液体カプセル化材料と、前記液体カプセル化材料の最も高い点で接触することを特徴とする請求項1に記載の方法。
- 前記LEDチップを直接覆う内側カプセル化材料をさらに備え、前記液体カプセル化材料は、前記内側カプセル化材料上に設けられることを特徴とする請求項1に記載の方法。
- 基板を提供するステップをさらに含み、前記LEDは前記基板に取り付けられることを特徴とする請求項1に記載の方法。
- 前記基板は、メニスカスリングを前記LEDチップの周囲にさらに備えることを特徴とする請求項6に記載の方法。
- 液体内側カプセル化材料を、前記LEDチップを直接覆って堆積させるステップと、
前記内側カプセル化材料を硬化させるステップと
をさらに含み、
前記メニスカスリングは、前記液体内側カプセル化材料を、硬化されるまで実質的に半球形に保持し、前記接触用液体カプセル化材料は、前記硬化された内側カプセル化材料上に設けられることを特徴とする請求項7に記載の方法。 - 発光ダイオード(LED)パッケージであって、
LEDチップが取り付けられた基板と、
前記基板上に前記LEDチップを囲んで存在し、メニスカス保持特徴を有するメニスカスリングと、
前記LEDチップを覆い、前記基板上に接触面を有する内側カプセル化材料であって、前記メニスカス保持特徴が前記接触面の縁部を画定する前記内側カプセル化材料と、
少なくとも一部分が凹状の底面を有し、前記凹状部分が前記LEDチップを覆った状態で、前記基板上に存在する光学素子と、
前記内側カプセル化材料と前記光学素子との間の接触用カプセル化材料と
を備えることを特徴とするLEDパッケージ。 - 前記光学素子は、実質的に半球のレンズを備えることを特徴とする請求項9に記載のLEDパッケージ。
- 前記内部カプセル化材料は、ある曲率半径をもち、前記光学素子の凹状部分は、ある曲率半径をもち、前記凹状部分は、前記内側カプセル化材料よりも大きな曲率半径をもつことを特徴とする請求項9に記載のLEDパッケージ。
- 前記光学素子と前記接触用カプセル化材料との間には、実質的に空気が閉じ込められていないことを特徴とする請求項9に記載のLEDパッケージ。
- 前記メニスカス形成特徴は、光学素子保持特徴をさらに備えることを特徴とする請求項9に記載のLEDパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/496,918 US7804147B2 (en) | 2006-07-31 | 2006-07-31 | Light emitting diode package element with internal meniscus for bubble free lens placement |
US11/496,918 | 2006-07-31 |
Publications (2)
Publication Number | Publication Date |
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JP2008034806A true JP2008034806A (ja) | 2008-02-14 |
JP5271509B2 JP5271509B2 (ja) | 2013-08-21 |
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JP2007143451A Active JP5271509B2 (ja) | 2006-07-31 | 2007-05-30 | 気泡なくレンズを配置するための内部メニスカスを備えた発光ダイオードパッケージ要素 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7804147B2 (ja) |
EP (1) | EP1885003A3 (ja) |
JP (1) | JP5271509B2 (ja) |
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EP1885003A2 (en) | 2008-02-06 |
JP5271509B2 (ja) | 2013-08-21 |
US20080026498A1 (en) | 2008-01-31 |
EP1885003A3 (en) | 2010-09-15 |
US7804147B2 (en) | 2010-09-28 |
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