JP2007103942A5 - - Google Patents
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- Publication number
- JP2007103942A5 JP2007103942A5 JP2006271013A JP2006271013A JP2007103942A5 JP 2007103942 A5 JP2007103942 A5 JP 2007103942A5 JP 2006271013 A JP2006271013 A JP 2006271013A JP 2006271013 A JP2006271013 A JP 2006271013A JP 2007103942 A5 JP2007103942 A5 JP 2007103942A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- etching
- layer
- based layer
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 18
- 229910052799 carbon Inorganic materials 0.000 claims 18
- 238000000034 method Methods 0.000 claims 16
- 238000005530 etching Methods 0.000 claims 10
- 239000007789 gas Substances 0.000 claims 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 5
- 229910052739 hydrogen Inorganic materials 0.000 claims 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 4
- 238000001020 plasma etching Methods 0.000 claims 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/244422 | 2005-10-05 | ||
| US11/244,422 US7432210B2 (en) | 2005-10-05 | 2005-10-05 | Process to open carbon based hardmask |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007103942A JP2007103942A (ja) | 2007-04-19 |
| JP2007103942A5 true JP2007103942A5 (https=) | 2009-11-12 |
| JP5265100B2 JP5265100B2 (ja) | 2013-08-14 |
Family
ID=37902459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006271013A Expired - Fee Related JP5265100B2 (ja) | 2005-10-05 | 2006-10-02 | 炭素系ハードマスクを開く方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7432210B2 (https=) |
| JP (1) | JP5265100B2 (https=) |
| KR (2) | KR101318898B1 (https=) |
| CN (1) | CN1953146B (https=) |
| TW (1) | TWI320203B (https=) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208407B2 (en) * | 2004-06-30 | 2007-04-24 | Micron Technology, Inc. | Flash memory cells with reduced distances between cell elements |
| US7432210B2 (en) * | 2005-10-05 | 2008-10-07 | Applied Materials, Inc. | Process to open carbon based hardmask |
| US8664124B2 (en) | 2005-10-31 | 2014-03-04 | Novellus Systems, Inc. | Method for etching organic hardmasks |
| US7399712B1 (en) * | 2005-10-31 | 2008-07-15 | Novellus Systems, Inc. | Method for etching organic hardmasks |
| US20070123050A1 (en) * | 2005-11-14 | 2007-05-31 | Micron Technology, Inc. | Etch process used during the manufacture of a semiconductor device and systems including the semiconductor device |
| US20070231746A1 (en) * | 2006-03-29 | 2007-10-04 | Iordanoglou Dimitrios I | Treating carbon containing layers in patterning stacks |
| US8367303B2 (en) * | 2006-07-14 | 2013-02-05 | Micron Technology, Inc. | Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control |
| US7613869B2 (en) * | 2006-11-27 | 2009-11-03 | Brigham Young University | Long-term digital data storage |
| US7867843B2 (en) * | 2006-12-22 | 2011-01-11 | Intel Corporation | Gate structures for flash memory and methods of making same |
| US7547636B2 (en) * | 2007-02-05 | 2009-06-16 | Lam Research Corporation | Pulsed ultra-high aspect ratio dielectric etch |
| US7682986B2 (en) * | 2007-02-05 | 2010-03-23 | Lam Research Corporation | Ultra-high aspect ratio dielectric etch |
| US7915166B1 (en) | 2007-02-22 | 2011-03-29 | Novellus Systems, Inc. | Diffusion barrier and etch stop films |
| US20100327413A1 (en) * | 2007-05-03 | 2010-12-30 | Lam Research Corporation | Hardmask open and etch profile control with hardmask open |
| US20090023294A1 (en) * | 2007-07-16 | 2009-01-22 | Applied Materials, Inc. | Method for etching using advanced patterning film in capacitive coupling high frequency plasma dielectric etch chamber |
| US8962101B2 (en) | 2007-08-31 | 2015-02-24 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
| US8298931B2 (en) * | 2007-09-28 | 2012-10-30 | Sandisk 3D Llc | Dual damascene with amorphous carbon for 3D deep via/trench application |
| US8435608B1 (en) | 2008-06-27 | 2013-05-07 | Novellus Systems, Inc. | Methods of depositing smooth and conformal ashable hard mask films |
| US9245792B2 (en) * | 2008-07-25 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming interconnect structures |
| US20100167506A1 (en) * | 2008-12-31 | 2010-07-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Inductive plasma doping |
| WO2010127943A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
| RU2011149551A (ru) | 2009-05-07 | 2013-06-20 | Басф Се | Композиции для удаления резиста и способы изготовления электрических устройств |
| WO2010127941A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
| US8563414B1 (en) | 2010-04-23 | 2013-10-22 | Novellus Systems, Inc. | Methods for forming conductive carbon films by PECVD |
| TWI448576B (zh) * | 2010-11-17 | 2014-08-11 | Nanmat Technology Co Ltd | 低介電材料及其薄膜之製備方法 |
| US8592321B2 (en) | 2011-06-08 | 2013-11-26 | United Microelectronics Corp. | Method for fabricating an aperture |
| US8641828B2 (en) | 2011-07-13 | 2014-02-04 | United Microelectronics Corp. | Cleaning method of semiconductor manufacturing process |
| US8759234B2 (en) | 2011-10-17 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deposited material and method of formation |
| SG193093A1 (en) * | 2012-02-13 | 2013-09-30 | Novellus Systems Inc | Method for etching organic hardmasks |
| SG195494A1 (en) | 2012-05-18 | 2013-12-30 | Novellus Systems Inc | Carbon deposition-etch-ash gap fill process |
| CN102709229A (zh) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | 一种形成钨塞的方法 |
| US9362133B2 (en) | 2012-12-14 | 2016-06-07 | Lam Research Corporation | Method for forming a mask by etching conformal film on patterned ashable hardmask |
| US9304396B2 (en) | 2013-02-25 | 2016-04-05 | Lam Research Corporation | PECVD films for EUV lithography |
| US9230854B2 (en) | 2013-04-08 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
| US9320387B2 (en) | 2013-09-30 | 2016-04-26 | Lam Research Corporation | Sulfur doped carbon hard masks |
| US9589799B2 (en) | 2013-09-30 | 2017-03-07 | Lam Research Corporation | High selectivity and low stress carbon hardmask by pulsed low frequency RF power |
| US9691590B2 (en) * | 2015-06-29 | 2017-06-27 | Lam Research Corporation | Selective removal of boron doped carbon hard mask layers |
| US10497578B2 (en) * | 2016-07-22 | 2019-12-03 | Applied Materials, Inc. | Methods for high temperature etching a material layer using protection coating |
| CN107887323B (zh) * | 2016-09-30 | 2020-06-05 | 中芯国际集成电路制造(北京)有限公司 | 互连结构及其制造方法 |
| JP7399863B2 (ja) * | 2018-02-05 | 2023-12-18 | ラム リサーチ コーポレーション | アモルファスカーボン層の開孔プロセス |
| CN112368805B (zh) | 2018-12-18 | 2024-10-08 | 玛特森技术公司 | 使用含硫工艺气体的含碳硬掩模去除工艺 |
| US11837441B2 (en) | 2019-05-29 | 2023-12-05 | Lam Research Corporation | Depositing a carbon hardmask by high power pulsed low frequency RF |
| CN114342043A (zh) | 2019-08-30 | 2022-04-12 | 朗姆研究公司 | 低压下的高密度、模量和硬度的非晶碳膜 |
| CN115699255A (zh) * | 2020-07-02 | 2023-02-03 | 应用材料公司 | 用于光刻应用的光刻胶层上的碳的选择性沉积 |
| US12469715B2 (en) * | 2022-10-13 | 2025-11-11 | Applied Materials, Inc. | Dry etching with etch byproduct self-cleaning |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590224A (ja) * | 1991-01-22 | 1993-04-09 | Toshiba Corp | 半導体装置の製造方法 |
| JP3998393B2 (ja) * | 1999-02-25 | 2007-10-24 | 株式会社東芝 | パターン形成方法 |
| US6573030B1 (en) * | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
| US6853141B2 (en) * | 2002-05-22 | 2005-02-08 | Daniel J. Hoffman | Capacitively coupled plasma reactor with magnetic plasma control |
| US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
| US6894245B2 (en) * | 2000-03-17 | 2005-05-17 | Applied Materials, Inc. | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| US6528751B1 (en) * | 2000-03-17 | 2003-03-04 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma |
| JP2002194547A (ja) * | 2000-06-08 | 2002-07-10 | Applied Materials Inc | アモルファスカーボン層の堆積方法 |
| CN1393740A (zh) * | 2001-06-25 | 2003-01-29 | 联华电子股份有限公司 | 蚀刻的方法 |
| WO2003017343A1 (fr) * | 2001-08-20 | 2003-02-27 | Tokyo Electron Limited | Procede de developpement a sec |
| US6927178B2 (en) * | 2002-07-11 | 2005-08-09 | Applied Materials, Inc. | Nitrogen-free dielectric anti-reflective coating and hardmask |
| WO2004061919A1 (en) | 2002-12-23 | 2004-07-22 | Tokyo Electron Limited | Method and apparatus for bilayer photoresist dry development |
| US7064078B2 (en) * | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
| US20050199585A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for metal etch hardmask application |
| US7235478B2 (en) * | 2005-01-12 | 2007-06-26 | Intel Corporation | Polymer spacer formation |
| US7432210B2 (en) * | 2005-10-05 | 2008-10-07 | Applied Materials, Inc. | Process to open carbon based hardmask |
-
2005
- 2005-10-05 US US11/244,422 patent/US7432210B2/en not_active Expired - Fee Related
-
2006
- 2006-09-28 TW TW095136106A patent/TWI320203B/zh not_active IP Right Cessation
- 2006-10-02 JP JP2006271013A patent/JP5265100B2/ja not_active Expired - Fee Related
- 2006-10-08 CN CN200610140012XA patent/CN1953146B/zh not_active Expired - Fee Related
- 2006-10-09 KR KR1020060097860A patent/KR101318898B1/ko not_active Expired - Fee Related
-
2008
- 2008-07-22 US US12/220,233 patent/US20080286977A1/en not_active Abandoned
-
2013
- 2013-07-29 KR KR1020130089469A patent/KR20130100072A/ko not_active Ceased
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