JP5265100B2 - 炭素系ハードマスクを開く方法 - Google Patents

炭素系ハードマスクを開く方法

Info

Publication number
JP5265100B2
JP5265100B2 JP2006271013A JP2006271013A JP5265100B2 JP 5265100 B2 JP5265100 B2 JP 5265100B2 JP 2006271013 A JP2006271013 A JP 2006271013A JP 2006271013 A JP2006271013 A JP 2006271013A JP 5265100 B2 JP5265100 B2 JP 5265100B2
Authority
JP
Japan
Prior art keywords
carbon
layer
etching
plasma
based layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006271013A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007103942A (ja
JP2007103942A5 (https=
Inventor
ワン ジュディー
スン シン−リ，
マア シャウミン
プウ ブライアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2007103942A publication Critical patent/JP2007103942A/ja
Publication of JP2007103942A5 publication Critical patent/JP2007103942A5/ja
Application granted granted Critical
Publication of JP5265100B2 publication Critical patent/JP5265100B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006271013A 2005-10-05 2006-10-02 炭素系ハードマスクを開く方法 Expired - Fee Related JP5265100B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/244422 2005-10-05
US11/244,422 US7432210B2 (en) 2005-10-05 2005-10-05 Process to open carbon based hardmask

Publications (3)

Publication Number Publication Date
JP2007103942A JP2007103942A (ja) 2007-04-19
JP2007103942A5 JP2007103942A5 (https=) 2009-11-12
JP5265100B2 true JP5265100B2 (ja) 2013-08-14

Family

ID=37902459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006271013A Expired - Fee Related JP5265100B2 (ja) 2005-10-05 2006-10-02 炭素系ハードマスクを開く方法

Country Status (5)

Country Link
US (2) US7432210B2 (https=)
JP (1) JP5265100B2 (https=)
KR (2) KR101318898B1 (https=)
CN (1) CN1953146B (https=)
TW (1) TWI320203B (https=)

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US7208407B2 (en) * 2004-06-30 2007-04-24 Micron Technology, Inc. Flash memory cells with reduced distances between cell elements
US7432210B2 (en) * 2005-10-05 2008-10-07 Applied Materials, Inc. Process to open carbon based hardmask
US8664124B2 (en) 2005-10-31 2014-03-04 Novellus Systems, Inc. Method for etching organic hardmasks
US7399712B1 (en) * 2005-10-31 2008-07-15 Novellus Systems, Inc. Method for etching organic hardmasks
US20070123050A1 (en) * 2005-11-14 2007-05-31 Micron Technology, Inc. Etch process used during the manufacture of a semiconductor device and systems including the semiconductor device
US20070231746A1 (en) * 2006-03-29 2007-10-04 Iordanoglou Dimitrios I Treating carbon containing layers in patterning stacks
US8367303B2 (en) * 2006-07-14 2013-02-05 Micron Technology, Inc. Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control
US7613869B2 (en) * 2006-11-27 2009-11-03 Brigham Young University Long-term digital data storage
US7867843B2 (en) * 2006-12-22 2011-01-11 Intel Corporation Gate structures for flash memory and methods of making same
US7547636B2 (en) * 2007-02-05 2009-06-16 Lam Research Corporation Pulsed ultra-high aspect ratio dielectric etch
US7682986B2 (en) * 2007-02-05 2010-03-23 Lam Research Corporation Ultra-high aspect ratio dielectric etch
US7915166B1 (en) 2007-02-22 2011-03-29 Novellus Systems, Inc. Diffusion barrier and etch stop films
US20100327413A1 (en) * 2007-05-03 2010-12-30 Lam Research Corporation Hardmask open and etch profile control with hardmask open
US20090023294A1 (en) * 2007-07-16 2009-01-22 Applied Materials, Inc. Method for etching using advanced patterning film in capacitive coupling high frequency plasma dielectric etch chamber
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
US8298931B2 (en) * 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
US8435608B1 (en) 2008-06-27 2013-05-07 Novellus Systems, Inc. Methods of depositing smooth and conformal ashable hard mask films
US9245792B2 (en) * 2008-07-25 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming interconnect structures
US20100167506A1 (en) * 2008-12-31 2010-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Inductive plasma doping
WO2010127943A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
RU2011149551A (ru) 2009-05-07 2013-06-20 Басф Се Композиции для удаления резиста и способы изготовления электрических устройств
WO2010127941A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
US8563414B1 (en) 2010-04-23 2013-10-22 Novellus Systems, Inc. Methods for forming conductive carbon films by PECVD
TWI448576B (zh) * 2010-11-17 2014-08-11 Nanmat Technology Co Ltd 低介電材料及其薄膜之製備方法
US8592321B2 (en) 2011-06-08 2013-11-26 United Microelectronics Corp. Method for fabricating an aperture
US8641828B2 (en) 2011-07-13 2014-02-04 United Microelectronics Corp. Cleaning method of semiconductor manufacturing process
US8759234B2 (en) 2011-10-17 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Deposited material and method of formation
SG193093A1 (en) * 2012-02-13 2013-09-30 Novellus Systems Inc Method for etching organic hardmasks
SG195494A1 (en) 2012-05-18 2013-12-30 Novellus Systems Inc Carbon deposition-etch-ash gap fill process
CN102709229A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种形成钨塞的方法
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US9230854B2 (en) 2013-04-08 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9320387B2 (en) 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US9589799B2 (en) 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US9691590B2 (en) * 2015-06-29 2017-06-27 Lam Research Corporation Selective removal of boron doped carbon hard mask layers
US10497578B2 (en) * 2016-07-22 2019-12-03 Applied Materials, Inc. Methods for high temperature etching a material layer using protection coating
CN107887323B (zh) * 2016-09-30 2020-06-05 中芯国际集成电路制造(北京)有限公司 互连结构及其制造方法
JP7399863B2 (ja) * 2018-02-05 2023-12-18 ラム リサーチ コーポレーション アモルファスカーボン層の開孔プロセス
CN112368805B (zh) 2018-12-18 2024-10-08 玛特森技术公司 使用含硫工艺气体的含碳硬掩模去除工艺
US11837441B2 (en) 2019-05-29 2023-12-05 Lam Research Corporation Depositing a carbon hardmask by high power pulsed low frequency RF
CN114342043A (zh) 2019-08-30 2022-04-12 朗姆研究公司 低压下的高密度、模量和硬度的非晶碳膜
CN115699255A (zh) * 2020-07-02 2023-02-03 应用材料公司 用于光刻应用的光刻胶层上的碳的选择性沉积
US12469715B2 (en) * 2022-10-13 2025-11-11 Applied Materials, Inc. Dry etching with etch byproduct self-cleaning

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JPH0590224A (ja) * 1991-01-22 1993-04-09 Toshiba Corp 半導体装置の製造方法
JP3998393B2 (ja) * 1999-02-25 2007-10-24 株式会社東芝 パターン形成方法
US6573030B1 (en) * 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
US6853141B2 (en) * 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6528751B1 (en) * 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
JP2002194547A (ja) * 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
CN1393740A (zh) * 2001-06-25 2003-01-29 联华电子股份有限公司 蚀刻的方法
WO2003017343A1 (fr) * 2001-08-20 2003-02-27 Tokyo Electron Limited Procede de developpement a sec
US6927178B2 (en) * 2002-07-11 2005-08-09 Applied Materials, Inc. Nitrogen-free dielectric anti-reflective coating and hardmask
WO2004061919A1 (en) 2002-12-23 2004-07-22 Tokyo Electron Limited Method and apparatus for bilayer photoresist dry development
US7064078B2 (en) * 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
US20050199585A1 (en) * 2004-03-12 2005-09-15 Applied Materials, Inc. Method of depositing an amorphous carbon film for metal etch hardmask application
US7235478B2 (en) * 2005-01-12 2007-06-26 Intel Corporation Polymer spacer formation
US7432210B2 (en) * 2005-10-05 2008-10-07 Applied Materials, Inc. Process to open carbon based hardmask

Also Published As

Publication number Publication date
KR20070038444A (ko) 2007-04-10
KR20130100072A (ko) 2013-09-09
TW200717649A (en) 2007-05-01
US7432210B2 (en) 2008-10-07
CN1953146B (zh) 2011-04-13
JP2007103942A (ja) 2007-04-19
CN1953146A (zh) 2007-04-25
US20070077780A1 (en) 2007-04-05
KR101318898B1 (ko) 2013-10-17
US20080286977A1 (en) 2008-11-20
TWI320203B (en) 2010-02-01

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