TWI320203B - Process to open carbon based hardmask - Google Patents

Process to open carbon based hardmask Download PDF

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Publication number
TWI320203B
TWI320203B TW095136106A TW95136106A TWI320203B TW I320203 B TWI320203 B TW I320203B TW 095136106 A TW095136106 A TW 095136106A TW 95136106 A TW95136106 A TW 95136106A TW I320203 B TWI320203 B TW I320203B
Authority
TW
Taiwan
Prior art keywords
carbon
etching
layer
hydrogen
plasma
Prior art date
Application number
TW095136106A
Other languages
English (en)
Chinese (zh)
Other versions
TW200717649A (en
Inventor
Judy Wang
Shing Li Sung
Shawming Ma
Bryan Pu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW200717649A publication Critical patent/TW200717649A/zh
Application granted granted Critical
Publication of TWI320203B publication Critical patent/TWI320203B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095136106A 2005-10-05 2006-09-28 Process to open carbon based hardmask TWI320203B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/244,422 US7432210B2 (en) 2005-10-05 2005-10-05 Process to open carbon based hardmask

Publications (2)

Publication Number Publication Date
TW200717649A TW200717649A (en) 2007-05-01
TWI320203B true TWI320203B (en) 2010-02-01

Family

ID=37902459

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136106A TWI320203B (en) 2005-10-05 2006-09-28 Process to open carbon based hardmask

Country Status (5)

Country Link
US (2) US7432210B2 (https=)
JP (1) JP5265100B2 (https=)
KR (2) KR101318898B1 (https=)
CN (1) CN1953146B (https=)
TW (1) TWI320203B (https=)

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US7682986B2 (en) * 2007-02-05 2010-03-23 Lam Research Corporation Ultra-high aspect ratio dielectric etch
US7915166B1 (en) 2007-02-22 2011-03-29 Novellus Systems, Inc. Diffusion barrier and etch stop films
US20100327413A1 (en) * 2007-05-03 2010-12-30 Lam Research Corporation Hardmask open and etch profile control with hardmask open
US20090023294A1 (en) * 2007-07-16 2009-01-22 Applied Materials, Inc. Method for etching using advanced patterning film in capacitive coupling high frequency plasma dielectric etch chamber
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
US8298931B2 (en) * 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
US8435608B1 (en) 2008-06-27 2013-05-07 Novellus Systems, Inc. Methods of depositing smooth and conformal ashable hard mask films
US9245792B2 (en) * 2008-07-25 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming interconnect structures
US20100167506A1 (en) * 2008-12-31 2010-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Inductive plasma doping
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RU2011149551A (ru) 2009-05-07 2013-06-20 Басф Се Композиции для удаления резиста и способы изготовления электрических устройств
WO2010127941A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
US8563414B1 (en) 2010-04-23 2013-10-22 Novellus Systems, Inc. Methods for forming conductive carbon films by PECVD
TWI448576B (zh) * 2010-11-17 2014-08-11 Nanmat Technology Co Ltd 低介電材料及其薄膜之製備方法
US8592321B2 (en) 2011-06-08 2013-11-26 United Microelectronics Corp. Method for fabricating an aperture
US8641828B2 (en) 2011-07-13 2014-02-04 United Microelectronics Corp. Cleaning method of semiconductor manufacturing process
US8759234B2 (en) 2011-10-17 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Deposited material and method of formation
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CN102709229A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种形成钨塞的方法
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US9230854B2 (en) 2013-04-08 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9320387B2 (en) 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US9589799B2 (en) 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US9691590B2 (en) * 2015-06-29 2017-06-27 Lam Research Corporation Selective removal of boron doped carbon hard mask layers
US10497578B2 (en) * 2016-07-22 2019-12-03 Applied Materials, Inc. Methods for high temperature etching a material layer using protection coating
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Also Published As

Publication number Publication date
JP5265100B2 (ja) 2013-08-14
KR20070038444A (ko) 2007-04-10
KR20130100072A (ko) 2013-09-09
TW200717649A (en) 2007-05-01
US7432210B2 (en) 2008-10-07
CN1953146B (zh) 2011-04-13
JP2007103942A (ja) 2007-04-19
CN1953146A (zh) 2007-04-25
US20070077780A1 (en) 2007-04-05
KR101318898B1 (ko) 2013-10-17
US20080286977A1 (en) 2008-11-20

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