KR101318898B1 - 탄소계 하드마스크를 개방하기 위한 프로세스 - Google Patents

탄소계 하드마스크를 개방하기 위한 프로세스 Download PDF

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Publication number
KR101318898B1
KR101318898B1 KR1020060097860A KR20060097860A KR101318898B1 KR 101318898 B1 KR101318898 B1 KR 101318898B1 KR 1020060097860 A KR1020060097860 A KR 1020060097860A KR 20060097860 A KR20060097860 A KR 20060097860A KR 101318898 B1 KR101318898 B1 KR 101318898B1
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South Korea
Prior art keywords
etching
layer
carbon
hydrogen
amorphous carbonaceous
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KR1020060097860A
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Korean (ko)
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KR20070038444A (ko
Inventor
주디 왕
싱리 성
샤우밍 마
브라이언 푸
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020060097860A 2005-10-05 2006-10-09 탄소계 하드마스크를 개방하기 위한 프로세스 Expired - Fee Related KR101318898B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/244,422 US7432210B2 (en) 2005-10-05 2005-10-05 Process to open carbon based hardmask
US11/244,422 2005-10-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020130089469A Division KR20130100072A (ko) 2005-10-05 2013-07-29 탄소계 하드마스크를 개방하기 위한 프로세스

Publications (2)

Publication Number Publication Date
KR20070038444A KR20070038444A (ko) 2007-04-10
KR101318898B1 true KR101318898B1 (ko) 2013-10-17

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Family Applications (2)

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KR1020060097860A Expired - Fee Related KR101318898B1 (ko) 2005-10-05 2006-10-09 탄소계 하드마스크를 개방하기 위한 프로세스
KR1020130089469A Ceased KR20130100072A (ko) 2005-10-05 2013-07-29 탄소계 하드마스크를 개방하기 위한 프로세스

Family Applications After (1)

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KR1020130089469A Ceased KR20130100072A (ko) 2005-10-05 2013-07-29 탄소계 하드마스크를 개방하기 위한 프로세스

Country Status (5)

Country Link
US (2) US7432210B2 (https=)
JP (1) JP5265100B2 (https=)
KR (2) KR101318898B1 (https=)
CN (1) CN1953146B (https=)
TW (1) TWI320203B (https=)

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US20070231746A1 (en) * 2006-03-29 2007-10-04 Iordanoglou Dimitrios I Treating carbon containing layers in patterning stacks
US8367303B2 (en) * 2006-07-14 2013-02-05 Micron Technology, Inc. Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control
US7613869B2 (en) * 2006-11-27 2009-11-03 Brigham Young University Long-term digital data storage
US7867843B2 (en) * 2006-12-22 2011-01-11 Intel Corporation Gate structures for flash memory and methods of making same
US7547636B2 (en) * 2007-02-05 2009-06-16 Lam Research Corporation Pulsed ultra-high aspect ratio dielectric etch
US7682986B2 (en) * 2007-02-05 2010-03-23 Lam Research Corporation Ultra-high aspect ratio dielectric etch
US7915166B1 (en) 2007-02-22 2011-03-29 Novellus Systems, Inc. Diffusion barrier and etch stop films
US20100327413A1 (en) * 2007-05-03 2010-12-30 Lam Research Corporation Hardmask open and etch profile control with hardmask open
US20090023294A1 (en) * 2007-07-16 2009-01-22 Applied Materials, Inc. Method for etching using advanced patterning film in capacitive coupling high frequency plasma dielectric etch chamber
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
US8298931B2 (en) * 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
US8435608B1 (en) 2008-06-27 2013-05-07 Novellus Systems, Inc. Methods of depositing smooth and conformal ashable hard mask films
US9245792B2 (en) * 2008-07-25 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming interconnect structures
US20100167506A1 (en) * 2008-12-31 2010-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Inductive plasma doping
WO2010127943A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
RU2011149551A (ru) 2009-05-07 2013-06-20 Басф Се Композиции для удаления резиста и способы изготовления электрических устройств
WO2010127941A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
US8563414B1 (en) 2010-04-23 2013-10-22 Novellus Systems, Inc. Methods for forming conductive carbon films by PECVD
TWI448576B (zh) * 2010-11-17 2014-08-11 Nanmat Technology Co Ltd 低介電材料及其薄膜之製備方法
US8592321B2 (en) 2011-06-08 2013-11-26 United Microelectronics Corp. Method for fabricating an aperture
US8641828B2 (en) 2011-07-13 2014-02-04 United Microelectronics Corp. Cleaning method of semiconductor manufacturing process
US8759234B2 (en) 2011-10-17 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Deposited material and method of formation
SG193093A1 (en) * 2012-02-13 2013-09-30 Novellus Systems Inc Method for etching organic hardmasks
SG195494A1 (en) 2012-05-18 2013-12-30 Novellus Systems Inc Carbon deposition-etch-ash gap fill process
CN102709229A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种形成钨塞的方法
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US9230854B2 (en) 2013-04-08 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9320387B2 (en) 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US9589799B2 (en) 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US9691590B2 (en) * 2015-06-29 2017-06-27 Lam Research Corporation Selective removal of boron doped carbon hard mask layers
US10497578B2 (en) * 2016-07-22 2019-12-03 Applied Materials, Inc. Methods for high temperature etching a material layer using protection coating
CN107887323B (zh) * 2016-09-30 2020-06-05 中芯国际集成电路制造(北京)有限公司 互连结构及其制造方法
JP7399863B2 (ja) * 2018-02-05 2023-12-18 ラム リサーチ コーポレーション アモルファスカーボン層の開孔プロセス
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CN115699255A (zh) * 2020-07-02 2023-02-03 应用材料公司 用于光刻应用的光刻胶层上的碳的选择性沉积
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Publication number Publication date
JP5265100B2 (ja) 2013-08-14
KR20070038444A (ko) 2007-04-10
KR20130100072A (ko) 2013-09-09
TW200717649A (en) 2007-05-01
US7432210B2 (en) 2008-10-07
CN1953146B (zh) 2011-04-13
JP2007103942A (ja) 2007-04-19
CN1953146A (zh) 2007-04-25
US20070077780A1 (en) 2007-04-05
US20080286977A1 (en) 2008-11-20
TWI320203B (en) 2010-02-01

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