JP2007103449A - 電子部品実装方法 - Google Patents

電子部品実装方法 Download PDF

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Publication number
JP2007103449A
JP2007103449A JP2005288107A JP2005288107A JP2007103449A JP 2007103449 A JP2007103449 A JP 2007103449A JP 2005288107 A JP2005288107 A JP 2005288107A JP 2005288107 A JP2005288107 A JP 2005288107A JP 2007103449 A JP2007103449 A JP 2007103449A
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Japan
Prior art keywords
electronic component
solder
gold bump
bump
thermosetting resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005288107A
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English (en)
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JP4654865B2 (ja
Inventor
Tadahiko Sakai
忠彦 境
Hideki Nagafuku
秀喜 永福
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to JP2005288107A priority Critical patent/JP4654865B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to EP06810809A priority patent/EP1929514A1/en
Priority to KR1020077017344A priority patent/KR101196722B1/ko
Priority to PCT/JP2006/319403 priority patent/WO2007043355A1/en
Priority to US11/816,177 priority patent/US7793413B2/en
Priority to CNA200680005056XA priority patent/CN101120441A/zh
Priority to TW095136239A priority patent/TW200721930A/zh
Publication of JP2007103449A publication Critical patent/JP2007103449A/ja
Application granted granted Critical
Publication of JP4654865B2 publication Critical patent/JP4654865B2/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K3/341—Surface mounted components
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    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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Abstract

【課題】金のバンプを半田接合する電子部品実装においてカーゲンダルボイドに起因する強度劣化を防止することができる電子部品実装方法を提供する。
【解決手段】電子部品６に設けられた金バンプ５を電極２に錫または錫系の半田を用いて接合し、電子部品６と基板１とを熱硬化性樹脂３によって接着する電子部品実装方法において、電子部品６を加熱しながら金バンプ５を電極２に接合するバンプ接合工程において、熱硬化性樹脂３を電子部品６の下面によって外側へ向かって流動させて、半田粒子４を半田の融点よりも高温に加熱された金バンプ５の側面に接触させるとともに、半田粒子４の一部を金バンプ５と電極２との間に挟み込んだ状態で溶融させる。これにより、金バンプ５中への外部からのＳｎの拡散を促進させて金バンプ５中のＳｎ濃度を上昇させ、半田接合部から金バンプ５へＳｎが拡散することによるカーゲンダルボイドを抑制することができる。
【選択図】図３

Description

本発明は、金バンプが設けられた電子部品を基板に実装する電子部品実装方法に関するものである。
電子部品を基板に実装する方法として、電子部品に設けられたバンプを基板に形成された接合端子に接合する形態が広く用いられており、バンプの材質としては導電性に優れ酸化による表面劣化のない金が多用されている。金を材質とするバンプを接合端子に接合する方法としては、従来より、熱硬化性樹脂中に導電粒子を混入した異方性導電剤が知られている。この方法では、電子部品の搭載に先立って接合端子を覆って予め異方性導電剤を塗布しておき、電子部品実装動作に際しバンプを接合端子に押圧しながら加熱する。これにより、バンプと接合端子とを導電粒子を介して電気的に導通させるとともに、硬化した熱硬化性樹脂によって電子部品本体と基板とを接着する。
この異方性導電剤を用いる方法は、電気的な導通と電子部品本体の基板への接着とを同時に行うことができると言う利点を有するものの、良好な導通を確保し低接続抵抗を実現するためには、バンプと接合端子との接触状態を全てのバンプについて均一に保つことが求められる。このため異方性導電剤を用いた部品実装においては、高度の搭載精度を備えた実装設備を必要としており、簡便な方法で金のバンプが設けられた電子部品を高品質で実装可能な方法が求められていた。
そしてこのような要望を満たすことを目的として、異方性導電剤に含有される導電粒子を半田粒子に置き換えた構成のものを用いる方法が各種提案されている（例えば特許文献１〜４参照）。これらの特許文献例においては、樹脂に半田粒子を混入したシート状の異方性導電剤を用い、電子部品実装動作においてバンプと接続端子との間に介在した半田粒子を溶融させることにより、良好な導通性を確保するようにしている。
特開平８−１８６１５６号公報 特開平１０−１１２４７３号公報 特開平１１−４０６４号公報 特開平１１−１７６８７９号公報
しかしながら、上述の各例に示す方法において、半田粒子を構成する半田材質として近年多用されている錫（Ｓｎ）系の半田を用いる場合には、以下に説明するようなカーゲンダルボイドに起因する強度劣化が生じるという問題がある。すなわち、金（Ａｕ）を材質とするバンプと接合端子とを半田を介在させて接合する接合界面近傍においては、時間の経過とともにＡｕ中へのＳｎの拡散が進行する。このとき異方性導電剤を用いる半田接合では、含有される半田粒子の量は通常の半田接合と比較して少ないため、半田接合部とバンプ中のＳｎの濃度差は大きくなりやすく、結果として半田接合部からバンプ中へのＳｎの拡散が促進されることとなる。この結果、半田接合部においてＳｎが拡散した部分に微小なボイドが発生し、接合強度を大きく低下させる要因となっていた。
そこで本発明は、金のバンプを半田接合する電子部品実装において、カーゲンダルボイドに起因する強度劣化を防止することができる電子部品実装方法を提供することを目的とする。
本発明の電子部品実装方法は、電子部品に設けられた金バンプを基板に形成された接合端子に錫または錫系の半田を用いて接合するとともに、前記電子部品と基板とを熱硬化性樹脂によって接着することによりこの電子部品を基板に実装する電子部品実装方法であって、前記半田を粒子状にした半田粒子を含む熱硬化性樹脂を前記基板の表面の前記接合端子を包含する範囲に塗布する樹脂塗布工程と、加熱機能を有する保持ヘッドによって前記電子部品を保持した状態で、前記金バンプと前記接合端子との位置合わせを行う位置合わせ工程と、前記保持ヘッドによる前記電子部品の加熱を行いながらこの保持ヘッドを下降させて前記金バンプを前記接合端子に接合するバンプ接合工程と、前記熱硬化性樹脂を熱硬化させて前記電子部品を前記基板に接着する樹脂硬化工程とを含み、前記バンプ接合工程において、前記塗布された熱硬化性樹脂を電子部品の下面によって外側へ向かって流動させて、前記熱硬化性樹脂中に含有された前記半田粒子を前記保持ヘッドによって前記半田の融点よりも高温に加熱された前記金バンプの側面に接触させるとともに、前記半田粒子の一部を前記金バンプと前記接続端子との間に挟み込んだ状態で溶融させる。
本発明によれば、塗布された熱硬化性樹脂を電子部品の下面によって外側へ向かって流動させて、熱硬化性樹脂中に含有された半田粒子を半田粒子の融点よりも高温に加熱された金バンプの側面に接触させるとともに、半田粒子の一部を金バンプと接続端子との間に挟み込んだ状態で溶融させることにより、金バンプ中への外部からのＳｎの拡散を促進させて金バンプ中のＳｎ濃度を上昇させることができ、半田接合部から金バンプへのＳｎの拡散を抑え、カーゲンダルボイドの発生を抑制することができる。
次に本発明の実施の形態を図面を参照して説明する。図１，図２、図３は本発明の一実施の形態の電子部品実装方法の工程説明図である。この電子部品実装方法は、電子部品に設けられた金バンプを、基板に形成された接合端子に錫または錫系の半田を用いて接合するとともに、電子部品と基板とを熱硬化性樹脂によって接着することにより、この電子部品を基板に実装するものである。
図１（ａ）において、基板１の表面には、接合端子としての電極２が形成されている。基板１の表面において電極２を包含する範囲には、図１（ｂ）に示すように、半田を粒子状にした半田粒子（図３（ａ）に示す半田粒子４参照）を含む熱硬化性樹脂３が塗布される（樹脂塗布工程）。ここで半田粒子４に用いられる半田は、錫（Ｓｎ）および銀（Ａｇ）を含むＳｎ−Ａｇ系半田、錫（Ｓｎ）、銀（Ａｇ）および銅（Ｃｕ）を含むＳｎ−Ａｇ−ＣＵ系半田、錫（Ｓｎ）およびビスマス（Ｂｉ）を含むＳｎ−Ｂｉ系半田のいずれかが用いられる。
次いで樹脂塗布後の基板１には、電子部品６が搭載される。図１（ｃ）に示すように、電子部品６の下面に形成された電極６ａには、下部に凸部５ａを有する形状の金バンプ５が設けられている。電子部品６は加熱機能を有する保持ツール７よって吸着保持され、基板１への搭載に先だって電子部品６の加熱が開始される。そして電子部品６を保持した保持ツール７は電子部品６の加熱を行いながら基板１の上方へ移動し、金バンプ５と電極２との位置合わせを行う（位置合わせ工程）。
この後電子部品６の加熱が進行して、金バンプ５の温度が熱硬化性樹脂３に含有される半田粒子４の融点よりも高温になったならば、電子部品６の着地動作が開始される。すなわち保持ツール７による電子部品６の加熱を行いながら、保持ヘッド７を下降させて金バンプ５を電極２に接合する（バンプ接合工程）。このとき、電子部品６の下降により、まず図２（ａ）に示すように、基板１の表面に塗布された熱硬化性樹脂３を外側に向かって
押し広げながら、金バンプ５の凸部５ａを電極２に着地させる。そしてこの後、保持ツール７による電子部品６の押圧と加熱を継続することにより、図２（ｂ）に示すように、凸部５ａが幾分押しつぶされた形で金バンプ５が電極２に接合されるとともに、熱硬化性樹脂３を熱硬化させて電子部品６を基板１に接着する（樹脂硬化工程）。
図３は、上述のバンプ接合工程における熱硬化性樹脂３の挙動を示している。電子部品６を基板１に対して下降させる過程においては、まず金バンプ５が凸部５ａから熱硬化性樹脂３に埋入し、その後電子部品６の下面が熱硬化性樹脂３を押し下げることによって熱硬化性樹脂３は内側から外側へ押し拡げられ、これにより、熱硬化性樹脂３は含有した半田粒子４とともに外側（矢印ａ方向）へ向かって流動する。
そしてこの状態でさらに電子部品６を下降させると、図２（ｂ）に示すように、熱硬化性樹脂３中の半田粒子４は一部が金バンプ５の側面に接触し、また一部は金バンプ５の下面と電極２との間に挟み込まれる。そしてこれらの半田粒子４はいずれも予め半田粒子４の融点よりも高温に加熱された金バンプ５に接触することによって溶融する。ここで、金バンプ５の側面に接触して溶融した半田粒子４からは、半田粒子４の成分であるＳｎが金バンプ５のＡｕ中に拡散する。また金バンプ５と電極２との間で溶融した半田粒子４は、後に冷却固化することにより、金バンプ５を電極２に接合する役割を果たす。
すなわち、本実施の形態に示す電子部品実装方法では、上述のバンプ接合工程において、塗布された熱硬化性樹脂３を電子部品６の下面によって外側へ向かって流動させて、熱硬化性樹脂３中に含有された半田粒子４を保持ヘッド７によって半田の融点よりも高温に加熱された金バンプ５の側面に接触させるとともに、半田粒子４の一部を金バンプ５と電極２との間に挟み込んだ状態で溶融させるようにしている。
金バンプ５を錫（Ｓｎ）系の半田によって電極２接合するに際し、上述のような電子部品実装方法を採用することにより、以下に示すような優れた効果を得る。すなわち、電子部品６の電極２への接合に錫系の半田を用いる場合には、カーゲンダルボイドに起因する強度劣化が生じるという問題がある。すなわち、金（Ａｕ）を材質とするバンプと電極とを半田を介在させて接合する接合界面近傍においては、半田接合部からＡｕ中へＳｎが拡散することによって微小なボイドが発生しやすく、接合強度を低下させる要因となっていた。
これに対し、本実施の形態に示す電子部品実装方法においては、熱硬化性樹脂３中の半田粒子４を流動させて加熱された金バンプ５の側面に接触させ、これらの半田粒子４を金バンプ５の表面で溶融させるようにしている。これにより、金バンプ５には外部から内部に向かって半田粒子４中のＳｎが拡散し、金バンプ５中のＳｎ濃度が上昇する。このことは、金バンプ５内部のＳｎ濃度と、金バンプ５と電極２との接合界面近傍におけるＳｎ濃度との濃度差が縮小することを意味している。
したがって、金バンプ５と電極２との接合界面に存在する半田粒子４から金バンプ５の内部へのＳｎの拡散が抑えられ、Ｓｎの拡散によってカーゲンダルボイドが発生することに起因する接合強度の低下を抑制することができる。このとき、金バンプ５を熱硬化性樹脂３に接触させる前に金バンプ５の温度を半田粒子４の融点よりも高温に加熱することにより、金バンプ４に接触した半田粒子４は速やかに溶融し、外部からの金バンプ５中へのＳｎの拡散を促進させることができる。
本発明の電子部品実装方法は、半田接合部から金バンプへのＳｎの拡散を抑えて、カーゲンダルボイドの発生を抑制することができるという効果を有し、金バンプを基板に形成
された接合端子に錫または錫系の半田を用いて接合する用途に利用可能である。
本発明の一実施の形態の電子部品実装方法の工程説明図 本発明の一実施の形態の電子部品実装方法の工程説明図 本発明の一実施の形態の電子部品実装方法の工程説明図
符号の説明
１ 基板
２ 電極（接合端子）
３ 熱硬化性樹脂
４ 半田粒子
５ 金バンプ
６ 電子部品
７ 保持ツール

Claims (3)

  1. 電子部品に設けられた金バンプを基板に形成された接合端子に錫または錫系の半田を用いて接合するとともに、前記電子部品と基板とを熱硬化性樹脂によって接着することによりこの電子部品を基板に実装する電子部品実装方法であって、
    前記半田を粒子状にした半田粒子を含む熱硬化性樹脂を前記基板の表面の前記接合端子を包含する範囲に塗布する樹脂塗布工程と、加熱機能を有する保持ヘッドによって前記電子部品を保持した状態で、前記金バンプと前記接合端子との位置合わせを行う位置合わせ工程と、前記保持ヘッドによる前記電子部品の加熱を行いながらこの保持ヘッドを下降させて前記金バンプを前記接合端子に接合するバンプ接合工程と、前記熱硬化性樹脂を熱硬化させて前記電子部品を前記基板に接着する樹脂硬化工程とを含み、
    前記バンプ接合工程において、前記塗布された熱硬化性樹脂を電子部品の下面によって外側へ向かって流動させて、前記熱硬化性樹脂中に含有された前記半田粒子を前記保持ヘッドによって前記半田の融点よりも高温に加熱された前記金バンプの側面に接触させるとともに、前記半田粒子の一部を前記金バンプと前記接続端子との間に挟み込んだ状態で溶融させることを特徴とする電子部品実装方法。
  2. 前記半田は、錫（Ｓｎ）および銀（Ａｇ）を含むＳｎ−Ａｇ系半田、錫（Ｓｎ）、銀（Ａｇ）および銅（Ｃｕ）を含むＳｎ−Ａｇ−ＣＵ系半田、錫（Ｓｎ）およびビスマス（Ｂｉ）を含むＳｎ−Ｂｉ系半田のいずれかであることを特徴とする請求項１記載の電子部品実装方法。
  3. 前記金バンプを前記熱硬化性樹脂に接触させる前に、前記金バンプの温度を前記半田の融点よりも高温に加熱することを特徴とする請求項１または２のいずれかに記載の電子部品実装方法。
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PCT/JP2006/319403 WO2007043355A1 (en) 2005-09-30 2006-09-22 Method of mounting electronic components
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