JP2007073804A5 - - Google Patents

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Publication number
JP2007073804A5
JP2007073804A5 JP2005260383A JP2005260383A JP2007073804A5 JP 2007073804 A5 JP2007073804 A5 JP 2007073804A5 JP 2005260383 A JP2005260383 A JP 2005260383A JP 2005260383 A JP2005260383 A JP 2005260383A JP 2007073804 A5 JP2007073804 A5 JP 2007073804A5
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JP
Japan
Prior art keywords
insulating film
forming
floating gate
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005260383A
Other languages
English (en)
Japanese (ja)
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JP2007073804A (ja
JP4912647B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005260383A priority Critical patent/JP4912647B2/ja
Priority claimed from JP2005260383A external-priority patent/JP4912647B2/ja
Priority to CNA2006101281351A priority patent/CN1929115A/zh
Priority to US11/515,000 priority patent/US7315058B2/en
Publication of JP2007073804A publication Critical patent/JP2007073804A/ja
Publication of JP2007073804A5 publication Critical patent/JP2007073804A5/ja
Application granted granted Critical
Publication of JP4912647B2 publication Critical patent/JP4912647B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005260383A 2005-09-08 2005-09-08 半導体記憶装置およびその製造方法 Expired - Fee Related JP4912647B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005260383A JP4912647B2 (ja) 2005-09-08 2005-09-08 半導体記憶装置およびその製造方法
CNA2006101281351A CN1929115A (zh) 2005-09-08 2006-09-05 半导体存储装置及其制造方法
US11/515,000 US7315058B2 (en) 2005-09-08 2006-09-05 Semiconductor memory device having a floating gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005260383A JP4912647B2 (ja) 2005-09-08 2005-09-08 半導体記憶装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2007073804A JP2007073804A (ja) 2007-03-22
JP2007073804A5 true JP2007073804A5 (https=) 2008-10-09
JP4912647B2 JP4912647B2 (ja) 2012-04-11

Family

ID=37829257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005260383A Expired - Fee Related JP4912647B2 (ja) 2005-09-08 2005-09-08 半導体記憶装置およびその製造方法

Country Status (3)

Country Link
US (1) US7315058B2 (https=)
JP (1) JP4912647B2 (https=)
CN (1) CN1929115A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100590568B1 (ko) * 2004-11-09 2006-06-19 삼성전자주식회사 멀티 비트 플래시 메모리 소자 및 동작 방법
US7968934B2 (en) * 2007-07-11 2011-06-28 Infineon Technologies Ag Memory device including a gate control layer
US8247861B2 (en) * 2007-07-18 2012-08-21 Infineon Technologies Ag Semiconductor device and method of making same
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US20110133266A1 (en) * 2009-12-03 2011-06-09 Sanh Tang Flash Memory Having a Floating Gate in the Shape of a Curved Section

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2799566B2 (ja) * 1985-11-14 1998-09-17 セイコーインスツルメンツ株式会社 半導体装置の製造方法
JPH07130884A (ja) * 1993-10-29 1995-05-19 Oki Electric Ind Co Ltd 不揮発性半導体メモリの製造方法
JPH08181231A (ja) * 1994-12-27 1996-07-12 Hitachi Ltd 不揮発性半導体記憶装置及びその製造方法
JPH11354742A (ja) 1998-06-08 1999-12-24 Hitachi Ltd 半導体装置及びその製造方法
US6091104A (en) * 1999-03-24 2000-07-18 Chen; Chiou-Feng Flash memory cell with self-aligned gates and fabrication process
JP2003188290A (ja) * 2001-12-19 2003-07-04 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6894339B2 (en) * 2003-01-02 2005-05-17 Actrans System Inc. Flash memory with trench select gate and fabrication process
JP2005051227A (ja) * 2003-07-17 2005-02-24 Nec Electronics Corp 半導体記憶装置
JP2005085903A (ja) * 2003-09-05 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
JP2006121009A (ja) * 2004-10-25 2006-05-11 Renesas Technology Corp 半導体記憶装置およびその製造方法

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