JP2007019357A5 - - Google Patents

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Publication number
JP2007019357A5
JP2007019357A5 JP2005201054A JP2005201054A JP2007019357A5 JP 2007019357 A5 JP2007019357 A5 JP 2007019357A5 JP 2005201054 A JP2005201054 A JP 2005201054A JP 2005201054 A JP2005201054 A JP 2005201054A JP 2007019357 A5 JP2007019357 A5 JP 2007019357A5
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JP
Japan
Prior art keywords
circuit
gate
mos transistor
voltage
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005201054A
Other languages
English (en)
Japanese (ja)
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JP2007019357A (ja
JP4967264B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2005201054A external-priority patent/JP4967264B2/ja
Priority to JP2005201054A priority Critical patent/JP4967264B2/ja
Priority to EP10002248A priority patent/EP2207202A1/en
Priority to KR1020060018925A priority patent/KR101106916B1/ko
Priority to EP06003938A priority patent/EP1744364A3/en
Priority to EP10002249A priority patent/EP2207203A1/en
Priority to EP09001297A priority patent/EP2053657B1/en
Priority to TW095106628A priority patent/TW200723499A/zh
Priority to US11/362,172 priority patent/US7511558B2/en
Priority to CN2008100868803A priority patent/CN101281929B/zh
Priority to CNB2006100093694A priority patent/CN100511688C/zh
Publication of JP2007019357A publication Critical patent/JP2007019357A/ja
Priority to US11/714,844 priority patent/US7385436B2/en
Publication of JP2007019357A5 publication Critical patent/JP2007019357A5/ja
Publication of JP4967264B2 publication Critical patent/JP4967264B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005201054A 2005-07-11 2005-07-11 半導体装置 Expired - Fee Related JP4967264B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2005201054A JP4967264B2 (ja) 2005-07-11 2005-07-11 半導体装置
TW095106628A TW200723499A (en) 2005-07-11 2006-02-27 Semiconductor devices
KR1020060018925A KR101106916B1 (ko) 2005-07-11 2006-02-27 반도체 장치
EP06003938A EP1744364A3 (en) 2005-07-11 2006-02-27 Semiconductor devices
EP10002249A EP2207203A1 (en) 2005-07-11 2006-02-27 Semiconductor devices
EP09001297A EP2053657B1 (en) 2005-07-11 2006-02-27 Method for operating a semiconductor device
EP10002248A EP2207202A1 (en) 2005-07-11 2006-02-27 Semiconductor devices
US11/362,172 US7511558B2 (en) 2005-07-11 2006-02-27 Semiconductor devices utilizing double gated fully depleted silicon on insulator MOS transistors
CN2008100868803A CN101281929B (zh) 2005-07-11 2006-02-28 半导体器件
CNB2006100093694A CN100511688C (zh) 2005-07-11 2006-02-28 半导体器件
US11/714,844 US7385436B2 (en) 2005-07-11 2007-03-07 Fully depleted silicon on insulator semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005201054A JP4967264B2 (ja) 2005-07-11 2005-07-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2007019357A JP2007019357A (ja) 2007-01-25
JP2007019357A5 true JP2007019357A5 (enExample) 2008-02-21
JP4967264B2 JP4967264B2 (ja) 2012-07-04

Family

ID=36972724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005201054A Expired - Fee Related JP4967264B2 (ja) 2005-07-11 2005-07-11 半導体装置

Country Status (6)

Country Link
US (2) US7511558B2 (enExample)
EP (4) EP2207202A1 (enExample)
JP (1) JP4967264B2 (enExample)
KR (1) KR101106916B1 (enExample)
CN (2) CN101281929B (enExample)
TW (1) TW200723499A (enExample)

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FR2955195B1 (fr) 2010-01-14 2012-03-09 Soitec Silicon On Insulator Dispositif de comparaison de donnees dans une memoire adressable par contenu sur seoi
FR2955200B1 (fr) 2010-01-14 2012-07-20 Soitec Silicon On Insulator Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree
FR2955203B1 (fr) 2010-01-14 2012-03-23 Soitec Silicon On Insulator Cellule memoire dont le canal traverse une couche dielectrique enterree
FR2957186B1 (fr) 2010-03-08 2012-09-28 Soitec Silicon On Insulator Cellule memoire de type sram
FR2957449B1 (fr) 2010-03-11 2022-07-15 S O I Tec Silicon On Insulator Tech Micro-amplificateur de lecture pour memoire
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FR2958441B1 (fr) 2010-04-02 2012-07-13 Soitec Silicon On Insulator Circuit pseudo-inverseur sur seoi
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