JP2007019309A - トランジスタ及びその動作方法 - Google Patents
トランジスタ及びその動作方法 Download PDFInfo
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- JP2007019309A JP2007019309A JP2005200127A JP2005200127A JP2007019309A JP 2007019309 A JP2007019309 A JP 2007019309A JP 2005200127 A JP2005200127 A JP 2005200127A JP 2005200127 A JP2005200127 A JP 2005200127A JP 2007019309 A JP2007019309 A JP 2007019309A
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- 238000011017 operating method Methods 0.000 title claims description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 117
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 74
- 239000000758 substrate Substances 0.000 abstract description 23
- 229910052594 sapphire Inorganic materials 0.000 abstract description 11
- 239000010980 sapphire Substances 0.000 abstract description 11
- 150000004767 nitrides Chemical class 0.000 description 71
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 53
- 229910002601 GaN Inorganic materials 0.000 description 51
- 230000010287 polarization Effects 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000002161 passivation Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】サファイア基板101上にAlNバッファ層102、アンドープGaN層103、アンドープAlGaN層104、p型コントロール層105、p型コンタクト層106がこの順に形成されている。また、トランジスタは、p型コンタクト層106にオーミック接触するゲート電極110と、アンドープAlGaN層104上に設けられたソース電極108およびドレイン電極109とを備えている。p型コントロール層105に正電圧を印加することで、チャネル内に正孔が注入され、チャネルを流れる電流を増加させることができる。
【選択図】図1
Description
M. Hikita et al. Technical Digest of 2004 International electron Devices Meeting (2004) p.803. O.Ambacher et al., J.Appl.Phys. Vol.85 (1999) p. 3222. L. Zhang et al., IEEE Transactions on Electron Devices, vol. 47, no. 3, pp. 507-511, 2000.
図1は、本発明の第1の実施形態に係る窒化物半導体装置を示す断面図である。
図4は、本発明の第2の実施形態に係る窒化物半導体装置を示す断面図である。
図7は、本発明の第3の実施形態に係る窒化物半導体装置を示す断面図である。
102、402、702 AlNバッファ層
103、404、703 アンドープGaN層
104、405、704 アンドープAlGaN層
105、406 p型コントロール層
106、407、707 p型コンタクト層
107、408、708 パッシベーション膜
108、409、709 ソース電極
109、410、710 ドレイン電極
110、411、711 ゲート電極
401 n型Si基板
403 アンドープAlGaN下地層
705 低濃度p型コントロール層
706 高濃度p型コントロール層
Claims (6)
- チャネル領域を含む第1の半導体層と、前記チャネル領域の上または上方に設けられ、前記チャネル領域よりもバンドギャップが大きい第2の半導体層と、前記第2の半導体層の内部または上または上方に設けられたp型の導電性を有するコントロール領域と、前記コントロール領域の一部に接して設けられたゲート電極と、前記コントロール領域の両側方に設けられたソース電極およびドレイン電極とを備え、
前記ゲート電極を前記ソース電極に対して順方向バイアスすることにより、前記チャネル領域に正孔が注入され、前記ソース電極と前記ドレイン電極との間に流れる電流が制御されることを特徴とするトランジスタ。 - 前記第1の半導体層、前記第2の半導体層および前記コントロール領域が窒素を含む化合物半導体により構成されることを特徴とする請求項1に記載のトランジスタ。
- 前記第1の半導体層の内部で且つ前記チャネル領域の下方に、前記チャネル領域よりもバンドギャップの大きな半導体層が設けられていることを特徴とする請求項1または2に記載のトランジスタ。
- 前記コントロール領域の内部に、p型の導電性を有する不純物の濃度が異なる少なくとも2つ以上の領域が設けられており、前記不純物の濃度勾配が上方に向かって増加するように設定されていることを特徴とする請求項1〜3のうちいずれか1つに記載のトランジスタ。
- チャネル領域を含む第1の半導体層と、前記チャネル領域の上または上方に設けられ、前記チャネル領域よりもバンドギャップが大きい第2の半導体層と、前記第2の半導体層の内部または上に設けられたp型の導電性を有するコントロール領域と、前記コントロール領域の一部に接して設けられたゲート電極と、前記コントロール領域の両側方に設けられたソース電極およびドレイン電極とを有するトランジスタの動作方法であって、
前記コントロール領域または前記第2の半導体層から前記チャネル領域に正孔を注入し、前記チャネル領域を介して前記ソース電極と前記ドレイン電極との間に流れる電流を制御するステップを含むことを特徴とするトランジスタの動作方法。 - 前記第1の半導体層、前記第2の半導体層および前記コントロール領域が窒素を含む化合物半導体により構成されていることを特徴とする請求項5に記載のトランジスタの動作方法。
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JP2005200127A JP4712459B2 (ja) | 2005-07-08 | 2005-07-08 | トランジスタ及びその動作方法 |
PCT/JP2006/312830 WO2007007548A1 (ja) | 2005-07-08 | 2006-06-27 | トランジスタ及びその動作方法 |
US11/995,040 US8076698B2 (en) | 2005-07-08 | 2006-06-27 | Transistor and method for operating the same |
CNA2006800187863A CN101185158A (zh) | 2005-07-08 | 2006-06-27 | 晶体管及其驱动方法 |
EP06767447A EP1909316A4 (en) | 2005-07-08 | 2006-06-27 | TRANSISTOR AND METHOD FOR ITS OPERATION |
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JP2005200127A JP4712459B2 (ja) | 2005-07-08 | 2005-07-08 | トランジスタ及びその動作方法 |
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JP2007019309A true JP2007019309A (ja) | 2007-01-25 |
JP4712459B2 JP4712459B2 (ja) | 2011-06-29 |
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EP (1) | EP1909316A4 (ja) |
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CN (1) | CN101185158A (ja) |
WO (1) | WO2007007548A1 (ja) |
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US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
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US9171730B2 (en) | 2013-02-15 | 2015-10-27 | Transphorm Inc. | Electrodes for semiconductor devices and methods of forming the same |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
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US9245992B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
WO2015009514A1 (en) | 2013-07-19 | 2015-01-22 | Transphorm Inc. | Iii-nitride transistor including a p-type depleting layer |
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US20150041820A1 (en) * | 2013-08-12 | 2015-02-12 | Philippe Renaud | Complementary gallium nitride integrated circuits and methods of their fabrication |
US10263104B2 (en) * | 2014-04-25 | 2019-04-16 | Hrl Laboratories, Llc | FET transistor on a III-V material structure with substrate transfer |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
US9722581B2 (en) | 2014-07-24 | 2017-08-01 | Eaton Corporation | Methods and systems for operating hybrid power devices using driver circuits that perform indirect instantaneous load current sensing |
US9397657B1 (en) | 2014-07-24 | 2016-07-19 | Eaton Corporation | Methods and systems for operating hybrid power devices using multiple current-dependent switching patterns |
US10090406B2 (en) * | 2014-09-18 | 2018-10-02 | Infineon Technologies Austria Ag | Non-planar normally off compound semiconductor device |
US9741711B2 (en) * | 2014-10-28 | 2017-08-22 | Semiconductor Components Industries, Llc | Cascode semiconductor device structure and method therefor |
JP6631950B2 (ja) | 2014-12-11 | 2020-01-15 | パナソニックIpマネジメント株式会社 | 窒化物半導体装置および窒化物半導体装置の製造方法 |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
CN105810707B (zh) * | 2014-12-31 | 2018-07-24 | 黄智方 | 高电子迁移率发光晶体管的结构 |
US9502602B2 (en) * | 2014-12-31 | 2016-11-22 | National Tsing Hua University | Structure of high electron mobility light emitting transistor |
WO2017123999A1 (en) | 2016-01-15 | 2017-07-20 | Transphorm Inc. | Enhancement mode iii-nitride devices having an al(1-x)sixo gate insulator |
TWI762486B (zh) | 2016-05-31 | 2022-05-01 | 美商創世舫科技有限公司 | 包含漸變空乏層的三族氮化物裝置 |
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US11521964B2 (en) * | 2018-06-29 | 2022-12-06 | Intel Corporation | Schottky diode structures and integration with III-V transistors |
US11121245B2 (en) | 2019-02-22 | 2021-09-14 | Efficient Power Conversion Corporation | Field plate structures with patterned surface passivation layers and methods for manufacturing thereof |
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US20220130988A1 (en) * | 2020-10-27 | 2022-04-28 | Texas Instruments Incorporated | Electronic device with enhancement mode gallium nitride transistor, and method of making same |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61140181A (ja) * | 1984-12-12 | 1986-06-27 | Nec Corp | 半導体装置 |
JPS61230381A (ja) * | 1985-04-05 | 1986-10-14 | Nec Corp | 半導体装置 |
JPS62211963A (ja) * | 1986-03-13 | 1987-09-17 | Fujitsu Ltd | ヘテロ接合半導体装置 |
JPH01183162A (ja) * | 1988-01-18 | 1989-07-20 | Toshiba Corp | 半導体装置 |
JPH11261053A (ja) * | 1998-03-09 | 1999-09-24 | Furukawa Electric Co Ltd:The | 高移動度トランジスタ |
JP2000100828A (ja) * | 1998-09-18 | 2000-04-07 | Sony Corp | 半導体装置及びその製造方法 |
JP2003133332A (ja) * | 2001-10-24 | 2003-05-09 | Shin Etsu Handotai Co Ltd | 化合物半導体素子 |
JP2005086102A (ja) * | 2003-09-10 | 2005-03-31 | Univ Nagoya | 電界効果トランジスタ、及び電界効果トランジスタの作製方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3687049T2 (de) * | 1985-04-05 | 1993-03-25 | Nippon Electric Co | Bipolare eigenschaften aufweisender transistor mit heterouebergang. |
US5929467A (en) * | 1996-12-04 | 1999-07-27 | Sony Corporation | Field effect transistor with nitride compound |
JP2004221363A (ja) * | 2003-01-16 | 2004-08-05 | Hitachi Cable Ltd | 高速電子移動度トランジスタ用エピタキシャルウェハ |
JP2004273486A (ja) | 2003-03-05 | 2004-09-30 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US7078743B2 (en) * | 2003-05-15 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor semiconductor device |
US20050133816A1 (en) * | 2003-12-19 | 2005-06-23 | Zhaoyang Fan | III-nitride quantum-well field effect transistors |
US7382001B2 (en) * | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
JP4041075B2 (ja) * | 2004-02-27 | 2008-01-30 | 株式会社東芝 | 半導体装置 |
-
2005
- 2005-07-08 JP JP2005200127A patent/JP4712459B2/ja active Active
-
2006
- 2006-06-27 WO PCT/JP2006/312830 patent/WO2007007548A1/ja active Application Filing
- 2006-06-27 EP EP06767447A patent/EP1909316A4/en not_active Ceased
- 2006-06-27 US US11/995,040 patent/US8076698B2/en active Active
- 2006-06-27 CN CNA2006800187863A patent/CN101185158A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61140181A (ja) * | 1984-12-12 | 1986-06-27 | Nec Corp | 半導体装置 |
JPS61230381A (ja) * | 1985-04-05 | 1986-10-14 | Nec Corp | 半導体装置 |
JPS62211963A (ja) * | 1986-03-13 | 1987-09-17 | Fujitsu Ltd | ヘテロ接合半導体装置 |
JPH01183162A (ja) * | 1988-01-18 | 1989-07-20 | Toshiba Corp | 半導体装置 |
JPH11261053A (ja) * | 1998-03-09 | 1999-09-24 | Furukawa Electric Co Ltd:The | 高移動度トランジスタ |
JP2000100828A (ja) * | 1998-09-18 | 2000-04-07 | Sony Corp | 半導体装置及びその製造方法 |
JP2003133332A (ja) * | 2001-10-24 | 2003-05-09 | Shin Etsu Handotai Co Ltd | 化合物半導体素子 |
JP2005086102A (ja) * | 2003-09-10 | 2005-03-31 | Univ Nagoya | 電界効果トランジスタ、及び電界効果トランジスタの作製方法 |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7868355B2 (en) | 2008-02-25 | 2011-01-11 | Sanken Electric Co., Ltd. | Hetero field effect transistor and manufacturing method thereof |
US8188515B2 (en) | 2008-12-22 | 2012-05-29 | Sanken Electric Co., Ltd. | Semiconductor device |
US8476677B2 (en) | 2008-12-22 | 2013-07-02 | Sanken Electric Co., Ltd. | Semiconductor device |
JP5469098B2 (ja) * | 2009-01-22 | 2014-04-09 | パナソニック株式会社 | 電界効果トランジスタ及びその製造方法 |
US8569797B2 (en) | 2009-01-22 | 2013-10-29 | Panasonic Corporation | Field effect transistor and method of manufacturing the same |
JP2010186925A (ja) * | 2009-02-13 | 2010-08-26 | Panasonic Corp | 半導体装置 |
US8748861B2 (en) | 2010-03-01 | 2014-06-10 | Fujitsu Limited | Compound semiconductor device and method for manufacturing the same |
US9071167B2 (en) | 2010-03-01 | 2015-06-30 | Fujitsu Limited | Compound semiconductor device and method for manufacturing the same |
US8471309B2 (en) | 2010-08-31 | 2013-06-25 | Fujitsu Limited | Compound semiconductor device and method of manufacturing the same |
US8581335B2 (en) | 2010-12-03 | 2013-11-12 | Fujitsu Limited | Compound semiconductor device and manufacturing method thereof |
US8969159B2 (en) | 2010-12-03 | 2015-03-03 | Fujitsu Limited | Compound semiconductor device and manufacturing method thereof |
US9006787B2 (en) | 2011-02-17 | 2015-04-14 | Transphorm Japan, Inc. | Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus |
US8603880B2 (en) | 2011-02-17 | 2013-12-10 | Fujitsu Limited | Semiconductor device including gate electrode provided over active region in P-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus |
US9231075B2 (en) | 2011-02-17 | 2016-01-05 | Transphorm Japan, Inc. | Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus |
US8957425B2 (en) | 2011-02-21 | 2015-02-17 | Fujitsu Limited | Semiconductor device and method for manufacturing semiconductor device |
US9231095B2 (en) | 2011-02-21 | 2016-01-05 | Fujitsu Limited | Method for manufacturing semiconductor device |
US9231059B2 (en) | 2011-06-13 | 2016-01-05 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method of manufacturing the device |
US8581300B2 (en) | 2011-09-26 | 2013-11-12 | Fujitsu Limited | Compound semiconductor device and method of manufacturing the same |
US8587030B2 (en) | 2011-09-28 | 2013-11-19 | Fujitsu Limited | Compound semiconductor device and method of manufacturing the same |
US8890206B2 (en) | 2012-03-19 | 2014-11-18 | Transphorm Japan, Inc. | Compound semiconductor device and method for manufacturing the same |
JP2013207107A (ja) * | 2012-03-28 | 2013-10-07 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
US9099351B2 (en) | 2012-09-21 | 2015-08-04 | Transphorm Japan, Inc. | Compound semiconductor device and method of manufacturing the same |
US9035356B2 (en) | 2012-09-28 | 2015-05-19 | Transphorm Japan, Inc. | Semiconductor device and manufacturing method of semiconductor device |
US9142638B2 (en) | 2012-09-28 | 2015-09-22 | Transphorm Japan, Inc. | Semiconductor device and manufacturing method of semiconductor device |
US8957453B2 (en) | 2012-09-28 | 2015-02-17 | Transphorm Japan, Inc. | Method of manufacturing a semiconductor device and semiconductor device |
KR101514140B1 (ko) | 2012-09-28 | 2015-04-21 | 트랜스폼 재팬 가부시키가이샤 | 반도체 장치의 제조 방법 및 반도체 장치 |
US9620616B2 (en) | 2012-09-28 | 2017-04-11 | Transphorm Japan, Inc. | Semiconductor device and method of manufacturing a semiconductor device |
US9054170B2 (en) | 2012-12-21 | 2015-06-09 | Fujitsu Limited | Semiconductor device, method for manufacturing the same, power supply, and high-frequency amplifier |
KR20150125538A (ko) * | 2014-04-30 | 2015-11-09 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Hemt 디바이스를 위한 측벽 패시베이션 |
KR101697825B1 (ko) * | 2014-04-30 | 2017-01-18 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Hemt 디바이스를 위한 측벽 패시베이션 |
US9621153B2 (en) | 2014-09-19 | 2017-04-11 | Kabushiki Kaisha Toshiba | Gate control device, semiconductor device, and method for controlling semiconductor device |
Also Published As
Publication number | Publication date |
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EP1909316A4 (en) | 2009-06-03 |
EP1909316A1 (en) | 2008-04-09 |
US8076698B2 (en) | 2011-12-13 |
US20090121775A1 (en) | 2009-05-14 |
JP4712459B2 (ja) | 2011-06-29 |
WO2007007548A1 (ja) | 2007-01-18 |
CN101185158A (zh) | 2008-05-21 |
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