JP2007012848A - 半導体記憶装置及びその製造方法 - Google Patents
半導体記憶装置及びその製造方法 Download PDFInfo
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- JP2007012848A JP2007012848A JP2005191257A JP2005191257A JP2007012848A JP 2007012848 A JP2007012848 A JP 2007012848A JP 2005191257 A JP2005191257 A JP 2005191257A JP 2005191257 A JP2005191257 A JP 2005191257A JP 2007012848 A JP2007012848 A JP 2007012848A
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- Semiconductor Memories (AREA)
Abstract
【解決手段】 コアチップ131〜134に接続された第1の内部電極141が第1の面110aに形成され、インターフェースチップに接続するための第2の内部電極142及び外部端子に接続するための第3の内部電極143が第2の面110bに形成されたインターポーザチップ110を備える。本発明によれば、インターポーザチップ110の第2の面110b側にインターフェースチップを後付け可能であることから、異なる仕様の製品を簡単に作り分けることが可能となる。すなわち、顧客の要望に応じて、適切なインターフェースチップを後から搭載すればよいことから、ベアチップ状態のコアチップを多量にストックしておく必要がなくなる。
【選択図】 図1
Description
110 インターポーザチップ
110a コア搭載面(第1の面)
110b 実装面(第2の面)
111 半導体基板
112,113 再配線層
120 インターフェースチップ
131〜134 コアチップ
141 第1の内部電極
142 第2の内部電極
143 第3の内部電極
150 外部端子
151 第1の貫通電極
152 第2の貫通電極
153 第3の貫通電極
161 チタンスパッタ層
162 銅スパッタ層
170 絶縁層
183 内部端子
191,192 封止樹脂
200,210 半導体ウェハ
200a,200b 半導体ウェハの表面
201 インターポーザ領域
202,212 導電部材
203,213 支持基板
204 保護シート
210a,210b 半導体ウェハの表面
211 コア領域
Claims (14)
- 第1の面に複数の第1の内部電極が形成され、前記第1の面と対向する第2の面に複数の第2の内部電極及び前記第2の内部電極よりも電極ピッチの広い複数の第3の内部電極が形成されたインターポーザチップと、前記インターポーザチップの前記第1の面側に搭載され、前記第1の内部電極に接続された複数のコアチップとを備え、
前記インターポーザチップは、半導体基板と、前記半導体基板の少なくとも一方の面に形成された再配線層と、前記半導体基板に形成され、前記第1の内部電極の一部と前記第2の内部電極の一部とを接続する複数の第1の貫通電極と、前記半導体基板に形成され、前記第1の内部電極の他の一部と前記第3の内部電極の一部とを接続する複数の第2の貫通電極とを有しており、
前記第1の貫通電極の電極ピッチは、前記第1の内部電極の電極ピッチ及び前記第2の内部電極の電極ピッチの少なくとも一方と実質的に等しいことを特徴とする半導体記憶装置。 - 前記第1の貫通電極の電極ピッチは、前記第1の内部電極の電極ピッチ及び前記第2の内部電極の電極ピッチの両方と実質的に等しいことを特徴とする請求項1に記載の半導体記憶装置。
- 前記第2の内部電極の他の一部と前記第3の内部電極の他の一部とは、前記インターポーザチップの前記再配線層を介して接続されていることを特徴とする請求項1又は2に記載の半導体記憶装置。
- 前記第1の貫通電極は信号伝送を行うために用いられ、前記第2の貫通電極は電源供給を行うために用いられることを特徴とする請求項1乃至3のいずれか1項に記載の半導体記憶装置。
- 前記複数のコアチップにはそれぞれ複数の第3の貫通電極が設けられており、前記複数のコアチップは、前記第1及び第3の貫通電極を介して前記第2の内部電極の前記一部とそれぞれ接続されていることを特徴とする請求項1乃至4のいずれか1項に記載の半導体記憶装置。
- 前記第1の貫通電極の電極ピッチと前記第3の貫通電極の電極ピッチが実質的に等しいことを特徴とする請求項1乃至5のいずれか1項に記載の半導体記憶装置。
- 前記第1の貫通電極の電極ピッチ及び前記第2の貫通電極の電極ピッチは、いずれも、前記第1の内部電極の電極ピッチと実質的に等しいことを特徴とする請求項1乃至6のいずれか1項に記載の半導体記憶装置。
- 前記第1の内部電極の前記一部と前記第1の貫通電極との平面的な位置は、実質的に一致していることを特徴とする請求項1乃至7のいずれか1項に記載の半導体記憶装置。
- 前記第2の内部電極の前記一部と前記第1の貫通電極との平面的な位置は、実質的に一致していることを特徴とする請求項1乃至8のいずれか1項に記載の半導体記憶装置。
- 前記第2の内部電極の前記一部と前記第1の貫通電極との平面的な位置は、前記再配線層による引き回しにより、少なくとも一部が不一致とされていることを特徴とする請求項1乃至8のいずれか1項に記載の半導体記憶装置。
- 前記インターポーザチップの前記第1の面側に設けられ、前記複数のコアチップをモールドする封止樹脂をさらに備えることを特徴とする請求項1乃至10のいずれか1項に記載の半導体記憶装置。
- 前記第3の内部電極上にそれぞれ形成された外部電極をさらに備えることを特徴とする請求項1乃至11のいずれか1項に記載の半導体記憶装置。
- 前記インターポーザチップの前記第2の面側に搭載され、前記第2の内部電極に接続されたインターフェースチップをさらに備えることを特徴とする請求項1乃至12のいずれか1項に記載の半導体記憶装置。
- 請求項1乃至12のいずれか1項に記載の半導体記憶装置に含まれるインターポーザチップの前記第2の面に、前記第2の内部電極に接続されるようインターフェースチップを搭載する工程を備えることを特徴とする半導体記憶装置の製造方法。
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Also Published As
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US20070001281A1 (en) | 2007-01-04 |
US20130011967A1 (en) | 2013-01-10 |
US20090294990A1 (en) | 2009-12-03 |
US8513121B2 (en) | 2013-08-20 |
US7576433B2 (en) | 2009-08-18 |
US8298940B2 (en) | 2012-10-30 |
JP4507101B2 (ja) | 2010-07-21 |
US7893540B2 (en) | 2011-02-22 |
US20110104852A1 (en) | 2011-05-05 |
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