JP2006527157A5 - - Google Patents

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Publication number
JP2006527157A5
JP2006527157A5 JP2006515874A JP2006515874A JP2006527157A5 JP 2006527157 A5 JP2006527157 A5 JP 2006527157A5 JP 2006515874 A JP2006515874 A JP 2006515874A JP 2006515874 A JP2006515874 A JP 2006515874A JP 2006527157 A5 JP2006527157 A5 JP 2006527157A5
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JP
Japan
Prior art keywords
chamber
gas
temperature
zone
supply device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006515874A
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English (en)
Japanese (ja)
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JP2006527157A (ja
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Publication date
Priority claimed from IT001196A external-priority patent/ITMI20031196A1/it
Application filed filed Critical
Publication of JP2006527157A publication Critical patent/JP2006527157A/ja
Publication of JP2006527157A5 publication Critical patent/JP2006527157A5/ja
Pending legal-status Critical Current

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JP2006515874A 2003-06-13 2004-06-09 炭化珪素の結晶を成長させるシステム Pending JP2006527157A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT001196A ITMI20031196A1 (it) 2003-06-13 2003-06-13 Sistema per crescere cristalli di carburo di silicio
PCT/EP2004/006244 WO2004111316A1 (en) 2003-06-13 2004-06-09 System for growing silicon carbide crystals

Publications (2)

Publication Number Publication Date
JP2006527157A JP2006527157A (ja) 2006-11-30
JP2006527157A5 true JP2006527157A5 (enExample) 2007-07-05

Family

ID=30131205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006515874A Pending JP2006527157A (ja) 2003-06-13 2004-06-09 炭化珪素の結晶を成長させるシステム

Country Status (8)

Country Link
US (1) US20060283389A1 (enExample)
EP (1) EP1636404A1 (enExample)
JP (1) JP2006527157A (enExample)
KR (1) KR20060017810A (enExample)
CN (1) CN100350082C (enExample)
IT (1) ITMI20031196A1 (enExample)
RU (1) RU2341595C2 (enExample)
WO (1) WO2004111316A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1471168B2 (en) † 2003-04-24 2011-08-10 Norstel AB Device and method for producing single crystals by vapour deposition
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
ITMI20050962A1 (it) * 2005-05-25 2006-11-26 Lpe Spa Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
ITMI20051308A1 (it) * 2005-07-11 2007-01-12 Milano Politecnico Metodo e reattore per crescere cristalli
EP2074244A4 (en) * 2006-07-28 2011-11-23 Pronomic Industry Ab CRYSTALLINE GROWTH METHOD AND REACTOR MODEL
JP4962074B2 (ja) * 2007-03-22 2012-06-27 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
JP5560093B2 (ja) * 2009-06-30 2014-07-23 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法及び基板製造方法
JP4888548B2 (ja) * 2009-12-24 2012-02-29 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
JP5562409B2 (ja) * 2010-02-26 2014-07-30 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
JP5287840B2 (ja) * 2010-12-16 2013-09-11 株式会社デンソー 炭化珪素単結晶の製造装置
JP5212455B2 (ja) * 2010-12-16 2013-06-19 株式会社デンソー 炭化珪素単結晶の製造装置
JP5668638B2 (ja) * 2011-08-10 2015-02-12 株式会社デンソー 炭化珪素単結晶の製造装置
JP5578146B2 (ja) * 2011-08-10 2014-08-27 株式会社デンソー 炭化珪素単結晶製造装置
JP5696804B2 (ja) * 2014-03-19 2015-04-08 株式会社デンソー 炭化珪素単結晶の製造装置
DE102015100062A1 (de) * 2015-01-06 2016-07-07 Universität Paderborn Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid
US11209306B2 (en) 2017-11-02 2021-12-28 Fluke Corporation Portable acoustic imaging tool with scanning and analysis capability
US20190129027A1 (en) 2017-11-02 2019-05-02 Fluke Corporation Multi-modal acoustic imaging tool
CN112703375A (zh) 2018-07-24 2021-04-23 弗兰克公司 用于投射和显示声学数据的系统和方法
IT201900000223A1 (it) 2019-01-09 2020-07-09 Lpe Spa Camera di reazione con elemento rotante e reattore per deposizione di materiale semiconduttore
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
WO2021242509A1 (en) * 2020-05-26 2021-12-02 Unm Rainforest Innovations Two-dimensional silicon carbide materials and fabrication methods thereof
KR102525767B1 (ko) * 2021-11-11 2023-04-27 오씨아이 주식회사 고순도 SiC 결정체의 제조방법

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US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
FI97920C (fi) * 1991-02-27 1997-03-10 Okmetic Oy Tapa puhdistaa puolijohdevalmiste
RU2026896C1 (ru) * 1991-06-19 1995-01-20 Институт проблем механики РАН Устройство для плазмохимического осаждения пленок
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置
FI98308C (fi) * 1994-08-29 1997-05-26 Okmetic Oy Kiinnitysaine kappaleen kiinnittämiseksi alustaansa
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
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EP0933450B1 (en) * 1998-01-19 2002-04-17 Sumitomo Electric Industries, Ltd. Method of making SiC single crystal and apparatus for making SiC single crystal
US6045613A (en) * 1998-10-09 2000-04-04 Cree, Inc. Production of bulk single crystals of silicon carbide
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JP3959952B2 (ja) * 2000-11-10 2007-08-15 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP3864696B2 (ja) * 2000-11-10 2007-01-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
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JP4742448B2 (ja) * 2001-06-06 2011-08-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP4329282B2 (ja) * 2001-06-22 2009-09-09 株式会社デンソー 炭化珪素単結晶の製造方法
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation

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