KR20060017810A - 탄화규소 결정들의 성장을 위한 시스템 - Google Patents

탄화규소 결정들의 성장을 위한 시스템 Download PDF

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Publication number
KR20060017810A
KR20060017810A KR1020057022349A KR20057022349A KR20060017810A KR 20060017810 A KR20060017810 A KR 20060017810A KR 1020057022349 A KR1020057022349 A KR 1020057022349A KR 20057022349 A KR20057022349 A KR 20057022349A KR 20060017810 A KR20060017810 A KR 20060017810A
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South Korea
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chamber
input means
region
silicon
gas
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KR1020057022349A
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English (en)
Korean (ko)
Inventor
지안루카 발렌테
비또리오 포제띠
올레 코르디나
마리지오 마씨
나탈레 스페시알레
다닐로 크리빠
프란코 프레띠
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엘피이 에스피에이
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Publication of KR20060017810A publication Critical patent/KR20060017810A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020057022349A 2003-06-13 2004-06-09 탄화규소 결정들의 성장을 위한 시스템 Withdrawn KR20060017810A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ITMI2003A001196 2003-06-13
IT001196A ITMI20031196A1 (it) 2003-06-13 2003-06-13 Sistema per crescere cristalli di carburo di silicio

Publications (1)

Publication Number Publication Date
KR20060017810A true KR20060017810A (ko) 2006-02-27

Family

ID=30131205

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057022349A Withdrawn KR20060017810A (ko) 2003-06-13 2004-06-09 탄화규소 결정들의 성장을 위한 시스템

Country Status (8)

Country Link
US (1) US20060283389A1 (enExample)
EP (1) EP1636404A1 (enExample)
JP (1) JP2006527157A (enExample)
KR (1) KR20060017810A (enExample)
CN (1) CN100350082C (enExample)
IT (1) ITMI20031196A1 (enExample)
RU (1) RU2341595C2 (enExample)
WO (1) WO2004111316A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102525767B1 (ko) * 2021-11-11 2023-04-27 오씨아이 주식회사 고순도 SiC 결정체의 제조방법

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EP1471168B2 (en) † 2003-04-24 2011-08-10 Norstel AB Device and method for producing single crystals by vapour deposition
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
ITMI20050962A1 (it) * 2005-05-25 2006-11-26 Lpe Spa Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
ITMI20051308A1 (it) * 2005-07-11 2007-01-12 Milano Politecnico Metodo e reattore per crescere cristalli
EP2074244A4 (en) * 2006-07-28 2011-11-23 Pronomic Industry Ab CRYSTALLINE GROWTH METHOD AND REACTOR MODEL
JP4962074B2 (ja) * 2007-03-22 2012-06-27 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
JP5560093B2 (ja) * 2009-06-30 2014-07-23 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法及び基板製造方法
JP4888548B2 (ja) * 2009-12-24 2012-02-29 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
JP5562409B2 (ja) * 2010-02-26 2014-07-30 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
JP5287840B2 (ja) * 2010-12-16 2013-09-11 株式会社デンソー 炭化珪素単結晶の製造装置
JP5212455B2 (ja) * 2010-12-16 2013-06-19 株式会社デンソー 炭化珪素単結晶の製造装置
JP5668638B2 (ja) * 2011-08-10 2015-02-12 株式会社デンソー 炭化珪素単結晶の製造装置
JP5578146B2 (ja) * 2011-08-10 2014-08-27 株式会社デンソー 炭化珪素単結晶製造装置
JP5696804B2 (ja) * 2014-03-19 2015-04-08 株式会社デンソー 炭化珪素単結晶の製造装置
DE102015100062A1 (de) * 2015-01-06 2016-07-07 Universität Paderborn Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid
US11209306B2 (en) 2017-11-02 2021-12-28 Fluke Corporation Portable acoustic imaging tool with scanning and analysis capability
US20190129027A1 (en) 2017-11-02 2019-05-02 Fluke Corporation Multi-modal acoustic imaging tool
CN112703375A (zh) 2018-07-24 2021-04-23 弗兰克公司 用于投射和显示声学数据的系统和方法
IT201900000223A1 (it) 2019-01-09 2020-07-09 Lpe Spa Camera di reazione con elemento rotante e reattore per deposizione di materiale semiconduttore
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
WO2021242509A1 (en) * 2020-05-26 2021-12-02 Unm Rainforest Innovations Two-dimensional silicon carbide materials and fabrication methods thereof

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102525767B1 (ko) * 2021-11-11 2023-04-27 오씨아이 주식회사 고순도 SiC 결정체의 제조방법
US12338544B2 (en) 2021-11-11 2025-06-24 Oci Company Ltd. Method of preparing a silicon carbide crystal by deposition onto at least a pair of conductive heating elements

Also Published As

Publication number Publication date
CN1806069A (zh) 2006-07-19
US20060283389A1 (en) 2006-12-21
WO2004111316A1 (en) 2004-12-23
JP2006527157A (ja) 2006-11-30
ITMI20031196A0 (it) 2003-06-13
ITMI20031196A1 (it) 2004-12-14
RU2006101147A (ru) 2006-06-10
CN100350082C (zh) 2007-11-21
EP1636404A1 (en) 2006-03-22
RU2341595C2 (ru) 2008-12-20

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PA0105 International application

Patent event date: 20051122

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid