JP2006527157A - 炭化珪素の結晶を成長させるシステム - Google Patents

炭化珪素の結晶を成長させるシステム Download PDF

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Publication number
JP2006527157A
JP2006527157A JP2006515874A JP2006515874A JP2006527157A JP 2006527157 A JP2006527157 A JP 2006527157A JP 2006515874 A JP2006515874 A JP 2006515874A JP 2006515874 A JP2006515874 A JP 2006515874A JP 2006527157 A JP2006527157 A JP 2006527157A
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chamber
gas
supply device
silicon
zone
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JP2006527157A5 (enExample
Inventor
バレンテ，ジヤンルカ
ポゼツテイ，ビツトリオ
コルデイナ，オレ
マシ，マウリツイオ
スペシアレ，ナタレ
クリパ，ダニロ
プレテイ，フランコ
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エルピーイー・ソチエタ・ペル・アチオニ
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Publication of JP2006527157A publication Critical patent/JP2006527157A/ja
Publication of JP2006527157A5 publication Critical patent/JP2006527157A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2006515874A 2003-06-13 2004-06-09 炭化珪素の結晶を成長させるシステム Pending JP2006527157A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT001196A ITMI20031196A1 (it) 2003-06-13 2003-06-13 Sistema per crescere cristalli di carburo di silicio
PCT/EP2004/006244 WO2004111316A1 (en) 2003-06-13 2004-06-09 System for growing silicon carbide crystals

Publications (2)

Publication Number Publication Date
JP2006527157A true JP2006527157A (ja) 2006-11-30
JP2006527157A5 JP2006527157A5 (enExample) 2007-07-05

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JP2006515874A Pending JP2006527157A (ja) 2003-06-13 2004-06-09 炭化珪素の結晶を成長させるシステム

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US (1) US20060283389A1 (enExample)
EP (1) EP1636404A1 (enExample)
JP (1) JP2006527157A (enExample)
KR (1) KR20060017810A (enExample)
CN (1) CN100350082C (enExample)
IT (1) ITMI20031196A1 (enExample)
RU (1) RU2341595C2 (enExample)
WO (1) WO2004111316A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008230924A (ja) * 2007-03-22 2008-10-02 Denso Corp 炭化珪素単結晶の製造装置および製造方法
JP2011029603A (ja) * 2009-06-30 2011-02-10 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法及び基板製造方法
WO2011105370A1 (ja) * 2010-02-26 2011-09-01 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
JP2012126612A (ja) * 2010-12-16 2012-07-05 Denso Corp 炭化珪素単結晶の製造装置
JP2012126613A (ja) * 2010-12-16 2012-07-05 Denso Corp 炭化珪素単結晶の製造装置および製造方法
JP2013035729A (ja) * 2011-08-10 2013-02-21 Denso Corp 炭化珪素単結晶製造装置
JP2013035730A (ja) * 2011-08-10 2013-02-21 Denso Corp 炭化珪素単結晶の製造装置
JP2014111546A (ja) * 2014-03-19 2014-06-19 Denso Corp 炭化珪素単結晶の製造装置
JP2023071626A (ja) * 2021-11-11 2023-05-23 オーシーアイ カンパニー リミテッド 高純度のＳｉＣ結晶体の製造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1471168B2 (en) † 2003-04-24 2011-08-10 Norstel AB Device and method for producing single crystals by vapour deposition
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
ITMI20050962A1 (it) * 2005-05-25 2006-11-26 Lpe Spa Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
ITMI20051308A1 (it) * 2005-07-11 2007-01-12 Milano Politecnico Metodo e reattore per crescere cristalli
EP2074244A4 (en) * 2006-07-28 2011-11-23 Pronomic Industry Ab CRYSTALLINE GROWTH METHOD AND REACTOR MODEL
JP4888548B2 (ja) * 2009-12-24 2012-02-29 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
DE102015100062A1 (de) * 2015-01-06 2016-07-07 Universität Paderborn Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid
US11209306B2 (en) 2017-11-02 2021-12-28 Fluke Corporation Portable acoustic imaging tool with scanning and analysis capability
US20190129027A1 (en) 2017-11-02 2019-05-02 Fluke Corporation Multi-modal acoustic imaging tool
CN112703375A (zh) 2018-07-24 2021-04-23 弗兰克公司 用于投射和显示声学数据的系统和方法
IT201900000223A1 (it) 2019-01-09 2020-07-09 Lpe Spa Camera di reazione con elemento rotante e reattore per deposizione di materiale semiconduttore
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
WO2021242509A1 (en) * 2020-05-26 2021-12-02 Unm Rainforest Innovations Two-dimensional silicon carbide materials and fabrication methods thereof

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JP2002527339A (ja) * 1998-10-09 2002-08-27 クリー インコーポレイテッド 炭化珪素のバルク単結晶の生成
JP2002362998A (ja) * 2001-06-06 2002-12-18 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法及び製造装置
JP2003002795A (ja) * 2001-06-22 2003-01-08 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法及び製造装置
JP2003511337A (ja) * 1999-10-08 2003-03-25 クリー インコーポレイテッド 炭化珪素結晶を成長させる方法及びその装置

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FI97920C (fi) * 1991-02-27 1997-03-10 Okmetic Oy Tapa puhdistaa puolijohdevalmiste
RU2026896C1 (ru) * 1991-06-19 1995-01-20 Институт проблем механики РАН Устройство для плазмохимического осаждения пленок
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置
FI98308C (fi) * 1994-08-29 1997-05-26 Okmetic Oy Kiinnitysaine kappaleen kiinnittämiseksi alustaansa
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
US6030661A (en) * 1995-08-04 2000-02-29 Abb Research Ltd. Device and a method for epitaxially growing objects by CVD
SE9503428D0 (sv) * 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
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JP4053125B2 (ja) * 1998-01-19 2008-02-27 住友電気工業株式会社 ＳｉＣ単結晶の合成方法
EP0933450B1 (en) * 1998-01-19 2002-04-17 Sumitomo Electric Industries, Ltd. Method of making SiC single crystal and apparatus for making SiC single crystal
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
RU2162117C2 (ru) * 1999-01-21 2001-01-20 Макаров Юрий Николаевич Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
US6406539B1 (en) * 1999-04-28 2002-06-18 Showa Denko K.K, Process for producing silicon carbide single crystal and production apparatus therefor
JP3959952B2 (ja) * 2000-11-10 2007-08-15 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP3864696B2 (ja) * 2000-11-10 2007-01-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
US6663025B1 (en) * 2001-03-29 2003-12-16 Lam Research Corporation Diffuser and rapid cycle chamber
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation

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Publication number Priority date Publication date Assignee Title
JP2002527339A (ja) * 1998-10-09 2002-08-27 クリー インコーポレイテッド 炭化珪素のバルク単結晶の生成
JP2003511337A (ja) * 1999-10-08 2003-03-25 クリー インコーポレイテッド 炭化珪素結晶を成長させる方法及びその装置
JP2002362998A (ja) * 2001-06-06 2002-12-18 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法及び製造装置
JP2003002795A (ja) * 2001-06-22 2003-01-08 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法及び製造装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008230924A (ja) * 2007-03-22 2008-10-02 Denso Corp 炭化珪素単結晶の製造装置および製造方法
JP2011029603A (ja) * 2009-06-30 2011-02-10 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法及び基板製造方法
JP5562409B2 (ja) * 2010-02-26 2014-07-30 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
WO2011105370A1 (ja) * 2010-02-26 2011-09-01 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
US8889533B2 (en) 2010-02-26 2014-11-18 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
CN102763193A (zh) * 2010-02-26 2012-10-31 株式会社日立国际电气 半导体器件的制造方法和衬底制造方法以及衬底处理装置
JP2012126612A (ja) * 2010-12-16 2012-07-05 Denso Corp 炭化珪素単結晶の製造装置
KR101437378B1 (ko) * 2010-12-16 2014-09-05 가부시키가이샤 덴소 탄화규소 단결정의 제조 장치 및 제조 방법
US8882911B2 (en) 2010-12-16 2014-11-11 Denso Corporation Apparatus for manufacturing silicon carbide single crystal
JP2012126613A (ja) * 2010-12-16 2012-07-05 Denso Corp 炭化珪素単結晶の製造装置および製造方法
JP2013035730A (ja) * 2011-08-10 2013-02-21 Denso Corp 炭化珪素単結晶の製造装置
JP2013035729A (ja) * 2011-08-10 2013-02-21 Denso Corp 炭化珪素単結晶製造装置
JP2014111546A (ja) * 2014-03-19 2014-06-19 Denso Corp 炭化珪素単結晶の製造装置
JP2023071626A (ja) * 2021-11-11 2023-05-23 オーシーアイ カンパニー リミテッド 高純度のＳｉＣ結晶体の製造方法
JP7655888B2 (ja) 2021-11-11 2025-04-02 オーシーアイ カンパニー リミテッド 高純度のＳｉＣ結晶体の製造方法

Also Published As

Publication number Publication date
KR20060017810A (ko) 2006-02-27
CN1806069A (zh) 2006-07-19
US20060283389A1 (en) 2006-12-21
WO2004111316A1 (en) 2004-12-23
ITMI20031196A0 (it) 2003-06-13
ITMI20031196A1 (it) 2004-12-14
RU2006101147A (ru) 2006-06-10
CN100350082C (zh) 2007-11-21
EP1636404A1 (en) 2006-03-22
RU2341595C2 (ru) 2008-12-20

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