JP2006526895A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006526895A5 JP2006526895A5 JP2006514212A JP2006514212A JP2006526895A5 JP 2006526895 A5 JP2006526895 A5 JP 2006526895A5 JP 2006514212 A JP2006514212 A JP 2006514212A JP 2006514212 A JP2006514212 A JP 2006514212A JP 2006526895 A5 JP2006526895 A5 JP 2006526895A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- concentration
- weight
- corrosion inhibitor
- sif
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46713403P | 2003-05-02 | 2003-05-02 | |
| PCT/US2004/013588 WO2004100245A1 (en) | 2003-05-02 | 2004-05-03 | Removal of post-etch residues in semiconductor processing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006526895A JP2006526895A (ja) | 2006-11-24 |
| JP2006526895A5 true JP2006526895A5 (https=) | 2007-07-05 |
Family
ID=33435028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006514212A Pending JP2006526895A (ja) | 2003-05-02 | 2004-05-03 | 半導体処理におけるエッチング後の残留物の除去 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7479474B2 (https=) |
| EP (1) | EP1620882A1 (https=) |
| JP (1) | JP2006526895A (https=) |
| KR (1) | KR20060014388A (https=) |
| CN (1) | CN100442449C (https=) |
| TW (1) | TW200428512A (https=) |
| WO (1) | WO2004100245A1 (https=) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4620680B2 (ja) * | 2003-10-29 | 2011-01-26 | マリンクロッド・ベイカー・インコーポレイテッド | ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング/灰化後の残渣の除去剤およびフォトレジスト剥離組成物 |
| DE102004037089A1 (de) * | 2004-07-30 | 2006-03-16 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Herstellung einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfermetallisierungsschicht |
| JP4637010B2 (ja) * | 2004-12-07 | 2011-02-23 | 花王株式会社 | 剥離剤組成物 |
| KR101190907B1 (ko) * | 2004-12-07 | 2012-10-12 | 가오 가부시키가이샤 | 박리제 조성물 |
| KR20060064441A (ko) * | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
| US7846349B2 (en) * | 2004-12-22 | 2010-12-07 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
| US7291565B2 (en) * | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
| WO2006104043A1 (ja) * | 2005-03-25 | 2006-10-05 | Mitsubishi Rayon Co., Ltd. | 表面処理方法および表面処理された物品 |
| KR100706822B1 (ko) * | 2005-10-17 | 2007-04-12 | 삼성전자주식회사 | 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법 |
| TW200741031A (en) * | 2006-03-03 | 2007-11-01 | Mec Co Ltd | Surface treating agent and method for manufacturing coating using the same |
| US20080139436A1 (en) * | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
| JP4642001B2 (ja) | 2006-10-24 | 2011-03-02 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去液組成物 |
| US8778210B2 (en) * | 2006-12-21 | 2014-07-15 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| WO2008090418A1 (en) * | 2007-01-22 | 2008-07-31 | Freescale Semiconductor, Inc. | Liquid cleaning composition and method for cleaning semiconductor devices |
| US20090211596A1 (en) * | 2007-07-11 | 2009-08-27 | Lam Research Corporation | Method of post etch polymer residue removal |
| US8236703B2 (en) * | 2007-09-12 | 2012-08-07 | Texas Instruments Incorporated | Methods for removing contaminants from aluminum-comprising bond pads and integrated circuits therefrom |
| JP5009207B2 (ja) * | 2007-09-21 | 2012-08-22 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| US8211810B2 (en) * | 2007-09-21 | 2012-07-03 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution |
| US7872978B1 (en) * | 2008-04-18 | 2011-01-18 | Link—A—Media Devices Corporation | Obtaining parameters for minimizing an error event probability |
| US8398779B2 (en) * | 2009-03-02 | 2013-03-19 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
| WO2010127942A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
| WO2010127941A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
| JP5836932B2 (ja) | 2009-05-07 | 2015-12-24 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | レジストストリッピング組成物及び電気装置を製造するための方法 |
| TWI516879B (zh) * | 2009-09-09 | 2016-01-11 | 東友精細化工有限公司 | 形成銅系配線用光阻剝離劑組成物、使用其來製造半導體裝置及平板顯示器之方法 |
| JP5646882B2 (ja) * | 2009-09-30 | 2014-12-24 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び半導体装置の製造方法 |
| WO2011109078A2 (en) * | 2010-03-05 | 2011-09-09 | Lam Research Corporation | Cleaning solution for sidewall polymer of damascene processes |
| JP6231017B2 (ja) * | 2012-02-06 | 2017-11-15 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 特定の硫黄含有化合物および糖アルコールまたはポリカルボン酸を含む、ポスト化学機械研磨(ポストcmp)洗浄組成物 |
| US8951950B2 (en) * | 2012-03-12 | 2015-02-10 | Ekc Technology | Aluminum post-etch residue removal with simultaneous surface passivation |
| JP2015517691A (ja) * | 2012-05-18 | 2015-06-22 | インテグリス,インコーポレイテッド | 窒化チタンを含む表面からフォトレジストを剥離するための組成物およびプロセス |
| US9447365B2 (en) * | 2012-07-27 | 2016-09-20 | Applied Materials, Inc. | Enhanced cleaning process of chamber used plasma spray coating without damaging coating |
| US9536730B2 (en) | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
| US9472420B2 (en) * | 2013-12-20 | 2016-10-18 | Air Products And Chemicals, Inc. | Composition for titanium nitride hard mask and etch residue removal |
| US9222018B1 (en) | 2014-07-24 | 2015-12-29 | Air Products And Chemicals, Inc. | Titanium nitride hard mask and etch residue removal |
| US10332784B2 (en) | 2015-03-31 | 2019-06-25 | Versum Materials Us, Llc | Selectively removing titanium nitride hard mask and etch residue removal |
| US10109575B1 (en) * | 2017-03-30 | 2018-10-23 | International Business Machines Corporation | Non-planar metal-insulator-metal capacitor formation |
| US11193094B2 (en) | 2017-07-31 | 2021-12-07 | Mitsubishi Gas Chemical Company, Inc. | Liquid composition for reducing damage of cobalt, alumina, interlayer insulating film and silicon nitride, and washing method using same |
| US10889757B2 (en) * | 2017-10-19 | 2021-01-12 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| IL274877B2 (en) | 2017-12-08 | 2024-03-01 | Basf Se | Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process |
| CN108166002B (zh) * | 2017-12-27 | 2020-01-07 | 吉林省电力科学研究院有限公司 | 一种适用于化学清洗的低温除油漂洗洗液及其使用工艺 |
| KR102579803B1 (ko) | 2018-07-06 | 2023-09-19 | 엔테그리스, 아이엔씨. | 물질의 선택적 에칭을 위한 개선 |
| KR20230056682A (ko) * | 2020-08-25 | 2023-04-27 | 바스프 에스이 | 에칭 후 잔류물을 제거하기 위한 조성물, 그것의 용도 및 프로세스 |
| KR20240165937A (ko) * | 2022-03-24 | 2024-11-25 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 구리 표면 보호용 조성물, 그리고 이것을 이용한 반도체 중간체 및 반도체의 제조방법 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5181985A (en) * | 1988-06-01 | 1993-01-26 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the wet-chemical surface treatment of semiconductor wafers |
| JP3160344B2 (ja) * | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
| US5294265A (en) * | 1992-04-02 | 1994-03-15 | Ppg Industries, Inc. | Non-chrome passivation for metal substrates |
| JP2857042B2 (ja) * | 1993-10-19 | 1999-02-10 | 新日本製鐵株式会社 | シリコン半導体およびシリコン酸化物の洗浄液 |
| US5571447A (en) * | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
| US5653823A (en) * | 1995-10-20 | 1997-08-05 | Ppg Industries, Inc. | Non-chrome post-rinse composition for phosphated metal substrates |
| US5603849A (en) * | 1995-11-15 | 1997-02-18 | Micron Technology, Inc. | Methods and compositions for cleaning silicon wafers with a dynamic two phase liquid system with hydrofluoric acid |
| US5645737A (en) * | 1996-02-21 | 1997-07-08 | Micron Technology, Inc. | Wet clean for a surface having an exposed silicon/silica interface |
| US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6033996A (en) * | 1997-11-13 | 2000-03-07 | International Business Machines Corporation | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide |
| US5858282A (en) * | 1997-11-21 | 1999-01-12 | Ppg Industries, Inc. | Aqueous amine fluoride neutralizing composition for metal pretreatments containing organic resin and method |
| US6312812B1 (en) * | 1998-12-01 | 2001-11-06 | Ppg Industries Ohio, Inc. | Coated metal substrates and methods for preparing and inhibiting corrosion of the same |
| US6440580B1 (en) * | 1998-12-01 | 2002-08-27 | Ppg Industries Ohio, Inc. | Weldable, coated metal substrates and methods for preparing and inhibiting corrosion of the same |
| US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
| US6248704B1 (en) * | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
| US6410926B1 (en) * | 1999-10-01 | 2002-06-25 | Ppg Industries Ohio, Inc. | Coating with optical taggent |
| CN1330395A (zh) * | 2000-06-27 | 2002-01-09 | 茂德科技股份有限公司 | 去除光致抗蚀剂后残留物质的清除方法 |
| US6750274B2 (en) * | 2001-02-08 | 2004-06-15 | Ppg Industries Ohio. Inc. | Weldable coating of phosphated epoxy polymer, curing agent and electroconductive pigment |
| MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| US6645633B2 (en) * | 2001-09-25 | 2003-11-11 | Henkel Corporation | Autodeposition compositions |
| US7166419B2 (en) | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
| US6761933B2 (en) * | 2002-10-24 | 2004-07-13 | Ppg Industries Ohio, Inc. | Process for coating untreated metal substrates |
-
2004
- 2004-05-03 KR KR1020057020812A patent/KR20060014388A/ko not_active Withdrawn
- 2004-05-03 JP JP2006514212A patent/JP2006526895A/ja active Pending
- 2004-05-03 EP EP04760679A patent/EP1620882A1/en not_active Withdrawn
- 2004-05-03 US US10/836,259 patent/US7479474B2/en not_active Expired - Fee Related
- 2004-05-03 CN CNB2004800119301A patent/CN100442449C/zh not_active Expired - Fee Related
- 2004-05-03 TW TW093112400A patent/TW200428512A/zh unknown
- 2004-05-03 WO PCT/US2004/013588 patent/WO2004100245A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2006526895A5 (https=) | ||
| TW200710205A (en) | Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers | |
| JP3441715B2 (ja) | 水性リンス組成物及びそれを用いた方法 | |
| JP2006526895A (ja) | 半導体処理におけるエッチング後の残留物の除去 | |
| JP2006350325A5 (https=) | ||
| CN1993457A (zh) | 微电子衬底的清洗组合物 | |
| TWI353381B (en) | Non-aqueous, non-corrosive microelectronic cleanin | |
| KR101831452B1 (ko) | 다목적 산성, 유기 용매 기반의 마이크로전자 세정 조성물 | |
| CN102301283B (zh) | 抗蚀剂剥离剂组合物以及使用该组合物的抗蚀剂剥离方法 | |
| JP5513181B2 (ja) | 洗浄組成物及び半導体装置の製造方法 | |
| JP5251977B2 (ja) | 半導体素子の洗浄方法 | |
| KR101101378B1 (ko) | Tft-lcd용 세정액 조성물 | |
| EP1883863A2 (en) | Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist | |
| JP2001520267A (ja) | 半導体基板からの残留物をストリッピングするためのホウ酸アンモニウム含有組成物 | |
| JP2004287288A (ja) | レジスト剥離用組成物及びレジスト剥離方法 | |
| JP4165209B2 (ja) | レジスト剥離剤 | |
| KR20100125270A (ko) | 마이크로전자 기재 세정용 조성물 | |
| JP4415228B2 (ja) | レジスト剥離液用組成物 | |
| JP7306553B2 (ja) | フォトレジスト除去用ストリッパー組成物およびそれを用いたフォトレジストの剥離方法 | |
| JP4577095B2 (ja) | 金属チタンのエッチング用組成物及びそれを用いたエッチング方法 | |
| JP4244734B2 (ja) | 枚葉式洗浄装置の基板工程用レジスト剥離液及びそれを用いた剥離方法 | |
| JPH1184687A (ja) | レジスト剥離剤組成物及びその使用方法 | |
| JP5407121B2 (ja) | 洗浄剤組成物 | |
| TW201300523A (zh) | 等離子刻蝕殘留物清洗液 | |
| JP3932150B2 (ja) | レジスト剥離剤組成物及びその使用方法 |