JP2006350325A5 - - Google Patents
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- Publication number
- JP2006350325A5 JP2006350325A5 JP2006142882A JP2006142882A JP2006350325A5 JP 2006350325 A5 JP2006350325 A5 JP 2006350325A5 JP 2006142882 A JP2006142882 A JP 2006142882A JP 2006142882 A JP2006142882 A JP 2006142882A JP 2006350325 A5 JP2006350325 A5 JP 2006350325A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- film
- photoresist pattern
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 229920002120 photoresistant polymer Polymers 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 5
- 239000000203 mixture Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- 239000000654 additive Substances 0.000 claims 3
- 230000000996 additive effect Effects 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 2
- 238000005260 corrosion Methods 0.000 claims 2
- 230000007797 corrosion Effects 0.000 claims 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims 2
- 239000003112 inhibitor Substances 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 1
- -1 alcohol amide compound Chemical class 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000003880 polar aprotic solvent Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050051421A KR100705416B1 (ko) | 2005-06-15 | 2005-06-15 | 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법 |
| KR10-2005-0051421 | 2005-06-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006350325A JP2006350325A (ja) | 2006-12-28 |
| JP2006350325A5 true JP2006350325A5 (https=) | 2009-07-02 |
| JP4880361B2 JP4880361B2 (ja) | 2012-02-22 |
Family
ID=37574163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006142882A Expired - Fee Related JP4880361B2 (ja) | 2005-06-15 | 2006-05-23 | フォトレジスト除去用組成物、フォトレジスト除去用組成物の製造方法、フォトレジスト除去用組成物を用いたフォトレジストの除去方法、及び半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7608540B2 (https=) |
| JP (1) | JP4880361B2 (https=) |
| KR (1) | KR100705416B1 (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101681131A (zh) * | 2007-06-12 | 2010-03-24 | 东亚合成株式会社 | 导电性高分子上的抗蚀剂膜的剥离剂、抗蚀剂膜的剥离方法及具有已图案化的导电性高分子的基板 |
| CN201219685Y (zh) * | 2008-04-16 | 2009-04-15 | 韩广民 | 组装结构产品及庭院椅 |
| US8481472B2 (en) | 2008-10-09 | 2013-07-09 | Avantor Performance Materials, Inc. | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition |
| WO2010090146A1 (ja) * | 2009-02-03 | 2010-08-12 | 出光興産株式会社 | レジスト剥離剤組成物及びそれを用いたレジスト剥離方法 |
| JP6283477B2 (ja) | 2012-06-25 | 2018-02-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | アミド成分を含むフォトレジスト |
| JP6231423B2 (ja) * | 2014-04-09 | 2017-11-15 | 東京応化工業株式会社 | フォトリソグラフィ用剥離液及びパターン形成方法 |
| WO2016028454A1 (en) | 2014-08-18 | 2016-02-25 | 3M Innovative Properties Company | Conductive layered structure and methods of making same |
| US9580672B2 (en) * | 2014-09-26 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning composition and method for semiconductor device fabrication |
| CN106796878B (zh) * | 2014-11-13 | 2021-02-09 | 三菱瓦斯化学株式会社 | 抑制了包含钨的材料的损伤的半导体元件的清洗液、及使用其的半导体元件的清洗方法 |
| KR102427699B1 (ko) * | 2015-04-27 | 2022-08-01 | 삼성전자주식회사 | 포토레지스트 제거용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| SG11202008828VA (en) * | 2018-03-28 | 2020-10-29 | Fujifilm Electronic Materials Usa Inc | Cleaning compositions |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| CN111073367A (zh) * | 2019-11-12 | 2020-04-28 | 江苏鑫露化工新材料有限公司 | 一种混合己二酸醇酰胺固化剂的制备方法 |
| SG11202108851RA (en) | 2020-01-15 | 2021-09-29 | Lam Res Corp | Underlayer for photoresist adhesion and dose reduction |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| EP4078292A4 (en) | 2020-07-07 | 2023-11-22 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| US20230107357A1 (en) | 2020-11-13 | 2023-04-06 | Lam Research Corporation | Process tool for dry removal of photoresist |
| JP7681106B2 (ja) | 2020-12-08 | 2025-05-21 | ラム リサーチ コーポレーション | 有機蒸気によるフォトレジストの現像 |
| KR102680084B1 (ko) * | 2021-07-29 | 2024-07-02 | 램 리써치 코포레이션 | 금속-함유 포토레지스트의 재작업 (rework) |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| JP7852072B2 (ja) | 2023-07-27 | 2026-04-27 | ラム リサーチ コーポレーション | 金属含有フォトレジストのためのオールインワン乾式現像 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09133983A (ja) * | 1995-06-12 | 1997-05-20 | Fuji Photo Film Co Ltd | ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物 |
| JPH095920A (ja) * | 1995-06-16 | 1997-01-10 | Fuji Photo Film Co Ltd | ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物 |
| JPH0990546A (ja) * | 1995-09-21 | 1997-04-04 | Fuji Photo Film Co Ltd | ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物 |
| JP3737196B2 (ja) | 1996-06-17 | 2006-01-18 | 積水ハウス株式会社 | 住宅の水平ブレース配置方法 |
| DE19751945A1 (de) | 1997-11-24 | 1999-05-27 | Agfa Gevaert Ag | Wässrige Zubereitung als Oxidationsschutz |
| JP3891735B2 (ja) * | 1998-08-05 | 2007-03-14 | 三星電子株式会社 | アルコキシｎ−ヒドロキシアルキルアルカンアミドからなるレジスト除去剤、レジスト除去用組成物、これらの製造方法及びこれらを用いたレジスト除去方法 |
| US20030022800A1 (en) * | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
| JP4810764B2 (ja) * | 2001-06-29 | 2011-11-09 | 三菱瓦斯化学株式会社 | レジスト剥離剤組成物 |
| KR100434491B1 (ko) * | 2001-08-17 | 2004-06-05 | 삼성전자주식회사 | 레지스트 또는 식각 부산물 제거용 조성물 및 이를 이용한레지스트 제거 방법 |
| JP4661007B2 (ja) | 2001-08-23 | 2011-03-30 | 昭和電工株式会社 | サイドウォール除去液 |
| JP2003122028A (ja) | 2001-10-17 | 2003-04-25 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
| JP2004029346A (ja) | 2002-06-25 | 2004-01-29 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
| KR20070003764A (ko) * | 2003-10-29 | 2007-01-05 | 나가세케무텍쿠스가부시키가이샤 | 포토레지스트 박리용 조성물 및 박리방법 |
-
2005
- 2005-06-15 KR KR1020050051421A patent/KR100705416B1/ko not_active Expired - Fee Related
-
2006
- 2006-04-19 US US11/406,243 patent/US7608540B2/en not_active Expired - Fee Related
- 2006-05-23 JP JP2006142882A patent/JP4880361B2/ja not_active Expired - Fee Related
-
2009
- 2009-09-22 US US12/564,077 patent/US7687448B2/en not_active Expired - Fee Related
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