KR20060014388A - 반도체 공정에서의 에칭후 잔류물의 제거 방법 - Google Patents
반도체 공정에서의 에칭후 잔류물의 제거 방법 Download PDFInfo
- Publication number
- KR20060014388A KR20060014388A KR1020057020812A KR20057020812A KR20060014388A KR 20060014388 A KR20060014388 A KR 20060014388A KR 1020057020812 A KR1020057020812 A KR 1020057020812A KR 20057020812 A KR20057020812 A KR 20057020812A KR 20060014388 A KR20060014388 A KR 20060014388A
- Authority
- KR
- South Korea
- Prior art keywords
- composition
- weight percent
- concentration
- water
- sif
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
- H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/141—Amines; Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/167—Phosphorus-containing compounds
- C23F11/1676—Phosphonic acids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/173—Macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
- C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
- C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
- C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
- C23G1/066—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors phosphorus-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46713403P | 2003-05-02 | 2003-05-02 | |
| US60/467,134 | 2003-05-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20060014388A true KR20060014388A (ko) | 2006-02-15 |
Family
ID=33435028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057020812A Withdrawn KR20060014388A (ko) | 2003-05-02 | 2004-05-03 | 반도체 공정에서의 에칭후 잔류물의 제거 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7479474B2 (https=) |
| EP (1) | EP1620882A1 (https=) |
| JP (1) | JP2006526895A (https=) |
| KR (1) | KR20060014388A (https=) |
| CN (1) | CN100442449C (https=) |
| TW (1) | TW200428512A (https=) |
| WO (1) | WO2004100245A1 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011031028A3 (en) * | 2009-09-09 | 2011-07-07 | Dongwoo Fine-Chem Co., Ltd. | Resist stripper composition for forming copper-based wiring |
| KR101279455B1 (ko) * | 2009-03-02 | 2013-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 알루미늄 함유 기판으로부터 비-금속성 침착물의 비파괴 선택적 침착 제거 |
| KR20150073108A (ko) * | 2013-12-20 | 2015-06-30 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 티타늄 니트라이드 하드 마스크 및 에칭 잔류물 제거를 위한 조성물 |
| KR20200034997A (ko) * | 2017-07-31 | 2020-04-01 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 코발트, 알루미나, 층간절연막, 질화실리콘의 데미지를 억제한 조성액 및 이것을 이용한 세정방법 |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2544198C (en) * | 2003-10-29 | 2011-07-26 | Mallinckrodt Baker, Inc. | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
| DE102004037089A1 (de) * | 2004-07-30 | 2006-03-16 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Herstellung einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfermetallisierungsschicht |
| KR101190907B1 (ko) * | 2004-12-07 | 2012-10-12 | 가오 가부시키가이샤 | 박리제 조성물 |
| JP4637010B2 (ja) * | 2004-12-07 | 2011-02-23 | 花王株式会社 | 剥離剤組成物 |
| KR20060064441A (ko) * | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
| US7846349B2 (en) * | 2004-12-22 | 2010-12-07 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
| US7291565B2 (en) * | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
| JP5518281B2 (ja) * | 2005-03-25 | 2014-06-11 | 三菱レイヨン株式会社 | 表面処理方法 |
| KR100706822B1 (ko) * | 2005-10-17 | 2007-04-12 | 삼성전자주식회사 | 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법 |
| TW200741031A (en) * | 2006-03-03 | 2007-11-01 | Mec Co Ltd | Surface treating agent and method for manufacturing coating using the same |
| US20080139436A1 (en) * | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
| JP4642001B2 (ja) * | 2006-10-24 | 2011-03-02 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去液組成物 |
| US8778210B2 (en) * | 2006-12-21 | 2014-07-15 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| US20100081595A1 (en) * | 2007-01-22 | 2010-04-01 | Freescale Semiconductor, Inc | Liquid cleaning composition and method for cleaning semiconductor devices |
| US20090211596A1 (en) * | 2007-07-11 | 2009-08-27 | Lam Research Corporation | Method of post etch polymer residue removal |
| US8236703B2 (en) * | 2007-09-12 | 2012-08-07 | Texas Instruments Incorporated | Methods for removing contaminants from aluminum-comprising bond pads and integrated circuits therefrom |
| US8211810B2 (en) * | 2007-09-21 | 2012-07-03 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution |
| JP5009207B2 (ja) * | 2007-09-21 | 2012-08-22 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| US7872978B1 (en) * | 2008-04-18 | 2011-01-18 | Link—A—Media Devices Corporation | Obtaining parameters for minimizing an error event probability |
| WO2010127941A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
| WO2010127943A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
| RU2011149551A (ru) | 2009-05-07 | 2013-06-20 | Басф Се | Композиции для удаления резиста и способы изготовления электрических устройств |
| JP5646882B2 (ja) * | 2009-09-30 | 2014-12-24 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び半導体装置の製造方法 |
| WO2011109078A2 (en) * | 2010-03-05 | 2011-09-09 | Lam Research Corporation | Cleaning solution for sidewall polymer of damascene processes |
| RU2631870C2 (ru) * | 2012-02-06 | 2017-09-28 | Басф Се | Композиция для очистки после химико-механического полирования (после - смр), содержащая конкретное содержащее серу соединение и сахарный спирт или поликарбоновую кислоту |
| US8951950B2 (en) * | 2012-03-12 | 2015-02-10 | Ekc Technology | Aluminum post-etch residue removal with simultaneous surface passivation |
| WO2013173738A1 (en) * | 2012-05-18 | 2013-11-21 | Advanced Technology Materials, Inc. | Composition and process for stripping photoresist from a surface including titanium nitride |
| US9447365B2 (en) * | 2012-07-27 | 2016-09-20 | Applied Materials, Inc. | Enhanced cleaning process of chamber used plasma spray coating without damaging coating |
| US9536730B2 (en) | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
| US9222018B1 (en) | 2014-07-24 | 2015-12-29 | Air Products And Chemicals, Inc. | Titanium nitride hard mask and etch residue removal |
| US10332784B2 (en) | 2015-03-31 | 2019-06-25 | Versum Materials Us, Llc | Selectively removing titanium nitride hard mask and etch residue removal |
| US10109575B1 (en) * | 2017-03-30 | 2018-10-23 | International Business Machines Corporation | Non-planar metal-insulator-metal capacitor formation |
| US10889757B2 (en) * | 2017-10-19 | 2021-01-12 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| CN111465679A (zh) * | 2017-12-08 | 2020-07-28 | 巴斯夫欧洲公司 | 用于从半导体基板及对应方法中移除蚀刻后或灰化后残余物的清洁组合物 |
| CN108166002B (zh) * | 2017-12-27 | 2020-01-07 | 吉林省电力科学研究院有限公司 | 一种适用于化学清洗的低温除油漂洗洗液及其使用工艺 |
| WO2020009793A1 (en) | 2018-07-06 | 2020-01-09 | Entegris, Inc. | Improvements to selectively etching materials |
| KR20230056682A (ko) * | 2020-08-25 | 2023-04-27 | 바스프 에스이 | 에칭 후 잔류물을 제거하기 위한 조성물, 그것의 용도 및 프로세스 |
| WO2023182193A1 (ja) * | 2022-03-24 | 2023-09-28 | 三菱瓦斯化学株式会社 | 銅表面保護用組成物、並びにこれを用いた半導体中間体および半導体の製造方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5181985A (en) | 1988-06-01 | 1993-01-26 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the wet-chemical surface treatment of semiconductor wafers |
| JP3160344B2 (ja) * | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
| US5294265A (en) * | 1992-04-02 | 1994-03-15 | Ppg Industries, Inc. | Non-chrome passivation for metal substrates |
| JP2857042B2 (ja) | 1993-10-19 | 1999-02-10 | 新日本製鐵株式会社 | シリコン半導体およびシリコン酸化物の洗浄液 |
| US5571447A (en) * | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
| US5653823A (en) * | 1995-10-20 | 1997-08-05 | Ppg Industries, Inc. | Non-chrome post-rinse composition for phosphated metal substrates |
| US5603849A (en) | 1995-11-15 | 1997-02-18 | Micron Technology, Inc. | Methods and compositions for cleaning silicon wafers with a dynamic two phase liquid system with hydrofluoric acid |
| US5645737A (en) | 1996-02-21 | 1997-07-08 | Micron Technology, Inc. | Wet clean for a surface having an exposed silicon/silica interface |
| US6896826B2 (en) | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6033996A (en) | 1997-11-13 | 2000-03-07 | International Business Machines Corporation | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide |
| US5858282A (en) * | 1997-11-21 | 1999-01-12 | Ppg Industries, Inc. | Aqueous amine fluoride neutralizing composition for metal pretreatments containing organic resin and method |
| US6312812B1 (en) * | 1998-12-01 | 2001-11-06 | Ppg Industries Ohio, Inc. | Coated metal substrates and methods for preparing and inhibiting corrosion of the same |
| US6440580B1 (en) * | 1998-12-01 | 2002-08-27 | Ppg Industries Ohio, Inc. | Weldable, coated metal substrates and methods for preparing and inhibiting corrosion of the same |
| US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
| US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
| US6410926B1 (en) * | 1999-10-01 | 2002-06-25 | Ppg Industries Ohio, Inc. | Coating with optical taggent |
| CN1330395A (zh) * | 2000-06-27 | 2002-01-09 | 茂德科技股份有限公司 | 去除光致抗蚀剂后残留物质的清除方法 |
| US6750274B2 (en) * | 2001-02-08 | 2004-06-15 | Ppg Industries Ohio. Inc. | Weldable coating of phosphated epoxy polymer, curing agent and electroconductive pigment |
| MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| US6645633B2 (en) * | 2001-09-25 | 2003-11-11 | Henkel Corporation | Autodeposition compositions |
| US7166419B2 (en) * | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
| US6761933B2 (en) * | 2002-10-24 | 2004-07-13 | Ppg Industries Ohio, Inc. | Process for coating untreated metal substrates |
-
2004
- 2004-05-03 CN CNB2004800119301A patent/CN100442449C/zh not_active Expired - Fee Related
- 2004-05-03 KR KR1020057020812A patent/KR20060014388A/ko not_active Withdrawn
- 2004-05-03 US US10/836,259 patent/US7479474B2/en not_active Expired - Fee Related
- 2004-05-03 WO PCT/US2004/013588 patent/WO2004100245A1/en not_active Ceased
- 2004-05-03 EP EP04760679A patent/EP1620882A1/en not_active Withdrawn
- 2004-05-03 JP JP2006514212A patent/JP2006526895A/ja active Pending
- 2004-05-03 TW TW093112400A patent/TW200428512A/zh unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101279455B1 (ko) * | 2009-03-02 | 2013-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 알루미늄 함유 기판으로부터 비-금속성 침착물의 비파괴 선택적 침착 제거 |
| WO2011031028A3 (en) * | 2009-09-09 | 2011-07-07 | Dongwoo Fine-Chem Co., Ltd. | Resist stripper composition for forming copper-based wiring |
| CN102483590A (zh) * | 2009-09-09 | 2012-05-30 | 东友Fine-Chem股份有限公司 | 用于形成铜基配线的光刻胶剥离剂组合物 |
| KR20150073108A (ko) * | 2013-12-20 | 2015-06-30 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 티타늄 니트라이드 하드 마스크 및 에칭 잔류물 제거를 위한 조성물 |
| KR20200034997A (ko) * | 2017-07-31 | 2020-04-01 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 코발트, 알루미나, 층간절연막, 질화실리콘의 데미지를 억제한 조성액 및 이것을 이용한 세정방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1620882A1 (en) | 2006-02-01 |
| US7479474B2 (en) | 2009-01-20 |
| JP2006526895A (ja) | 2006-11-24 |
| CN1802731A (zh) | 2006-07-12 |
| TW200428512A (en) | 2004-12-16 |
| US20050245409A1 (en) | 2005-11-03 |
| CN100442449C (zh) | 2008-12-10 |
| WO2004100245A1 (en) | 2004-11-18 |
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