WO2011031028A3 - Resist stripper composition for forming copper-based wiring - Google Patents

Resist stripper composition for forming copper-based wiring Download PDF

Info

Publication number
WO2011031028A3
WO2011031028A3 PCT/KR2010/005854 KR2010005854W WO2011031028A3 WO 2011031028 A3 WO2011031028 A3 WO 2011031028A3 KR 2010005854 W KR2010005854 W KR 2010005854W WO 2011031028 A3 WO2011031028 A3 WO 2011031028A3
Authority
WO
WIPO (PCT)
Prior art keywords
resist
copper
stripper composition
based wiring
forming copper
Prior art date
Application number
PCT/KR2010/005854
Other languages
French (fr)
Other versions
WO2011031028A2 (en
Inventor
Hun-Pyo Hong
Hyung-Pyo Hong
Tae-Hee Kim
Seung-Yong Lee
Byoung-Mook Kim
Original Assignee
Dongwoo Fine-Chem Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090084862A external-priority patent/KR20110026977A/en
Priority claimed from KR1020090084861A external-priority patent/KR20110026976A/en
Application filed by Dongwoo Fine-Chem Co., Ltd. filed Critical Dongwoo Fine-Chem Co., Ltd.
Priority to JP2012528740A priority Critical patent/JP2013504782A/en
Priority to CN201080036745.3A priority patent/CN102483590B/en
Publication of WO2011031028A2 publication Critical patent/WO2011031028A2/en
Publication of WO2011031028A3 publication Critical patent/WO2011031028A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

Disclosed is a resist stripper composition for forming copper-based wiring, which uses a compound containing sulfone and/or sulfine and/or an ester as the stripper and which can effectively prevent the corrosion of a conductive metal layer of copper or copper alloy wiring and an insulating layer of silicon oxide or silicon nitride which are disposed under the resist, even without the use of isopropanol as an intermediate cleaner, and also can cleanly remove the deteriorated and/or cured resist even at low temperature in a short period of time.
PCT/KR2010/005854 2009-09-09 2010-09-09 Resist stripper composition for forming copper-based wiring WO2011031028A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012528740A JP2013504782A (en) 2009-09-09 2010-09-09 Resist removing composition for forming copper-based wiring
CN201080036745.3A CN102483590B (en) 2009-09-09 2010-09-09 Resist stripper composition for forming copper-based wiring

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0084861 2009-09-09
KR1020090084862A KR20110026977A (en) 2009-09-09 2009-09-09 Cu-compatible resist removing composition
KR10-2009-0084862 2009-09-09
KR1020090084861A KR20110026976A (en) 2009-09-09 2009-09-09 Cu-compatible resist removing composition

Publications (2)

Publication Number Publication Date
WO2011031028A2 WO2011031028A2 (en) 2011-03-17
WO2011031028A3 true WO2011031028A3 (en) 2011-07-07

Family

ID=43732914

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005854 WO2011031028A2 (en) 2009-09-09 2010-09-09 Resist stripper composition for forming copper-based wiring

Country Status (4)

Country Link
JP (1) JP2013504782A (en)
CN (1) CN102483590B (en)
TW (1) TWI516879B (en)
WO (1) WO2011031028A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI725162B (en) * 2016-04-08 2021-04-21 日商富士軟片股份有限公司 Treatment liquid, its manufacturing method, pattern forming method and manufacturing method of electronic device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378551B1 (en) * 2000-01-14 2003-03-29 주식회사 동진쎄미켐 Resist remover composition
KR20060014388A (en) * 2003-05-02 2006-02-15 이케이씨 테크놀로지, 인코포레이티드 Removal of post-etch residues in semiconductor processing
KR100742119B1 (en) * 2001-02-16 2007-07-24 주식회사 동진쎄미켐 Photoresist remover composition
KR20080098310A (en) * 2007-05-04 2008-11-07 동우 화인켐 주식회사 Resist stripper composition and a method of stripping resist using the same
KR20080098311A (en) * 2007-05-04 2008-11-07 동우 화인켐 주식회사 Resist stripper composition and a method of stripping resist using the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
CN1218222C (en) * 2000-07-10 2005-09-07 Ekc技术公司 Compsns. for cleaning organic and plasma etched residues for semiconductor devices
JP3738996B2 (en) * 2002-10-10 2006-01-25 東京応化工業株式会社 Cleaning liquid for photolithography and substrate processing method
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
JP3403187B2 (en) * 2001-08-03 2003-05-06 東京応化工業株式会社 Stripping solution for photoresist
JP2009014938A (en) * 2007-07-03 2009-01-22 Toagosei Co Ltd Resist release agent composition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378551B1 (en) * 2000-01-14 2003-03-29 주식회사 동진쎄미켐 Resist remover composition
KR100742119B1 (en) * 2001-02-16 2007-07-24 주식회사 동진쎄미켐 Photoresist remover composition
KR20060014388A (en) * 2003-05-02 2006-02-15 이케이씨 테크놀로지, 인코포레이티드 Removal of post-etch residues in semiconductor processing
KR20080098310A (en) * 2007-05-04 2008-11-07 동우 화인켐 주식회사 Resist stripper composition and a method of stripping resist using the same
KR20080098311A (en) * 2007-05-04 2008-11-07 동우 화인켐 주식회사 Resist stripper composition and a method of stripping resist using the same

Also Published As

Publication number Publication date
TW201120587A (en) 2011-06-16
WO2011031028A2 (en) 2011-03-17
CN102483590B (en) 2014-05-21
TWI516879B (en) 2016-01-11
CN102483590A (en) 2012-05-30
JP2013504782A (en) 2013-02-07

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