CN100442449C - 半导体工艺中后蚀刻残留物的去除 - Google Patents

半导体工艺中后蚀刻残留物的去除 Download PDF

Info

Publication number
CN100442449C
CN100442449C CNB2004800119301A CN200480011930A CN100442449C CN 100442449 C CN100442449 C CN 100442449C CN B2004800119301 A CNB2004800119301 A CN B2004800119301A CN 200480011930 A CN200480011930 A CN 200480011930A CN 100442449 C CN100442449 C CN 100442449C
Authority
CN
China
Prior art keywords
composition
weight
ingredients
concentration
h2sif6
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004800119301A
Other languages
English (en)
Chinese (zh)
Other versions
CN1802731A (zh
Inventor
M·切尔纳特
S·李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EKC Technology Inc
Original Assignee
EKC Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EKC Technology Inc filed Critical EKC Technology Inc
Publication of CN1802731A publication Critical patent/CN1802731A/zh
Application granted granted Critical
Publication of CN100442449C publication Critical patent/CN100442449C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/141—Amines; Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/167—Phosphorus-containing compounds
    • C23F11/1676—Phosphonic acids
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/173—Macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/066—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors phosphorus-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CNB2004800119301A 2003-05-02 2004-05-03 半导体工艺中后蚀刻残留物的去除 Expired - Fee Related CN100442449C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46713403P 2003-05-02 2003-05-02
US60/467,134 2003-05-02

Publications (2)

Publication Number Publication Date
CN1802731A CN1802731A (zh) 2006-07-12
CN100442449C true CN100442449C (zh) 2008-12-10

Family

ID=33435028

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800119301A Expired - Fee Related CN100442449C (zh) 2003-05-02 2004-05-03 半导体工艺中后蚀刻残留物的去除

Country Status (7)

Country Link
US (1) US7479474B2 (https=)
EP (1) EP1620882A1 (https=)
JP (1) JP2006526895A (https=)
KR (1) KR20060014388A (https=)
CN (1) CN100442449C (https=)
TW (1) TW200428512A (https=)
WO (1) WO2004100245A1 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2544198C (en) * 2003-10-29 2011-07-26 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
DE102004037089A1 (de) * 2004-07-30 2006-03-16 Advanced Micro Devices, Inc., Sunnyvale Technik zur Herstellung einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfermetallisierungsschicht
KR101190907B1 (ko) * 2004-12-07 2012-10-12 가오 가부시키가이샤 박리제 조성물
JP4637010B2 (ja) * 2004-12-07 2011-02-23 花王株式会社 剥離剤組成物
KR20060064441A (ko) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 비수성 비부식성 마이크로전자 세정 조성물
US7846349B2 (en) * 2004-12-22 2010-12-07 Applied Materials, Inc. Solution for the selective removal of metal from aluminum substrates
US7291565B2 (en) * 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
JP5518281B2 (ja) * 2005-03-25 2014-06-11 三菱レイヨン株式会社 表面処理方法
KR100706822B1 (ko) * 2005-10-17 2007-04-12 삼성전자주식회사 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법
TW200741031A (en) * 2006-03-03 2007-11-01 Mec Co Ltd Surface treating agent and method for manufacturing coating using the same
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
JP4642001B2 (ja) * 2006-10-24 2011-03-02 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去液組成物
US8778210B2 (en) * 2006-12-21 2014-07-15 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride
US20100081595A1 (en) * 2007-01-22 2010-04-01 Freescale Semiconductor, Inc Liquid cleaning composition and method for cleaning semiconductor devices
US20090211596A1 (en) * 2007-07-11 2009-08-27 Lam Research Corporation Method of post etch polymer residue removal
US8236703B2 (en) * 2007-09-12 2012-08-07 Texas Instruments Incorporated Methods for removing contaminants from aluminum-comprising bond pads and integrated circuits therefrom
US8211810B2 (en) * 2007-09-21 2012-07-03 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution
JP5009207B2 (ja) * 2007-09-21 2012-08-22 大日本スクリーン製造株式会社 基板処理装置
US7872978B1 (en) * 2008-04-18 2011-01-18 Link—A—Media Devices Corporation Obtaining parameters for minimizing an error event probability
US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
WO2010127941A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
WO2010127943A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
RU2011149551A (ru) 2009-05-07 2013-06-20 Басф Се Композиции для удаления резиста и способы изготовления электрических устройств
CN102483590B (zh) * 2009-09-09 2014-05-21 东友Fine-Chem股份有限公司 用于形成铜基配线的光刻胶剥离剂组合物
JP5646882B2 (ja) * 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
WO2011109078A2 (en) * 2010-03-05 2011-09-09 Lam Research Corporation Cleaning solution for sidewall polymer of damascene processes
RU2631870C2 (ru) * 2012-02-06 2017-09-28 Басф Се Композиция для очистки после химико-механического полирования (после - смр), содержащая конкретное содержащее серу соединение и сахарный спирт или поликарбоновую кислоту
US8951950B2 (en) * 2012-03-12 2015-02-10 Ekc Technology Aluminum post-etch residue removal with simultaneous surface passivation
WO2013173738A1 (en) * 2012-05-18 2013-11-21 Advanced Technology Materials, Inc. Composition and process for stripping photoresist from a surface including titanium nitride
US9447365B2 (en) * 2012-07-27 2016-09-20 Applied Materials, Inc. Enhanced cleaning process of chamber used plasma spray coating without damaging coating
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US9472420B2 (en) * 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
US9222018B1 (en) 2014-07-24 2015-12-29 Air Products And Chemicals, Inc. Titanium nitride hard mask and etch residue removal
US10332784B2 (en) 2015-03-31 2019-06-25 Versum Materials Us, Llc Selectively removing titanium nitride hard mask and etch residue removal
US10109575B1 (en) * 2017-03-30 2018-10-23 International Business Machines Corporation Non-planar metal-insulator-metal capacitor formation
WO2019026677A1 (ja) * 2017-07-31 2019-02-07 三菱瓦斯化学株式会社 コバルト、アルミナ、層間絶縁膜、窒化シリコンのダメージを抑制した組成液及びこれを用いた洗浄方法
US10889757B2 (en) * 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
CN111465679A (zh) * 2017-12-08 2020-07-28 巴斯夫欧洲公司 用于从半导体基板及对应方法中移除蚀刻后或灰化后残余物的清洁组合物
CN108166002B (zh) * 2017-12-27 2020-01-07 吉林省电力科学研究院有限公司 一种适用于化学清洗的低温除油漂洗洗液及其使用工艺
WO2020009793A1 (en) 2018-07-06 2020-01-09 Entegris, Inc. Improvements to selectively etching materials
KR20230056682A (ko) * 2020-08-25 2023-04-27 바스프 에스이 에칭 후 잔류물을 제거하기 위한 조성물, 그것의 용도 및 프로세스
WO2023182193A1 (ja) * 2022-03-24 2023-09-28 三菱瓦斯化学株式会社 銅表面保護用組成物、並びにこれを用いた半導体中間体および半導体の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5417877A (en) * 1991-01-25 1995-05-23 Ashland Inc. Organic stripping composition
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
CN1330395A (zh) * 2000-06-27 2002-01-09 茂德科技股份有限公司 去除光致抗蚀剂后残留物质的清除方法
WO2003006599A1 (en) * 2001-07-09 2003-01-23 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing ammonia-free fluoride salts

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181985A (en) 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
US5294265A (en) * 1992-04-02 1994-03-15 Ppg Industries, Inc. Non-chrome passivation for metal substrates
JP2857042B2 (ja) 1993-10-19 1999-02-10 新日本製鐵株式会社 シリコン半導体およびシリコン酸化物の洗浄液
US5653823A (en) * 1995-10-20 1997-08-05 Ppg Industries, Inc. Non-chrome post-rinse composition for phosphated metal substrates
US5603849A (en) 1995-11-15 1997-02-18 Micron Technology, Inc. Methods and compositions for cleaning silicon wafers with a dynamic two phase liquid system with hydrofluoric acid
US5645737A (en) 1996-02-21 1997-07-08 Micron Technology, Inc. Wet clean for a surface having an exposed silicon/silica interface
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6033996A (en) 1997-11-13 2000-03-07 International Business Machines Corporation Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
US5858282A (en) * 1997-11-21 1999-01-12 Ppg Industries, Inc. Aqueous amine fluoride neutralizing composition for metal pretreatments containing organic resin and method
US6312812B1 (en) * 1998-12-01 2001-11-06 Ppg Industries Ohio, Inc. Coated metal substrates and methods for preparing and inhibiting corrosion of the same
US6440580B1 (en) * 1998-12-01 2002-08-27 Ppg Industries Ohio, Inc. Weldable, coated metal substrates and methods for preparing and inhibiting corrosion of the same
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6410926B1 (en) * 1999-10-01 2002-06-25 Ppg Industries Ohio, Inc. Coating with optical taggent
US6750274B2 (en) * 2001-02-08 2004-06-15 Ppg Industries Ohio. Inc. Weldable coating of phosphated epoxy polymer, curing agent and electroconductive pigment
US6645633B2 (en) * 2001-09-25 2003-11-11 Henkel Corporation Autodeposition compositions
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
US6761933B2 (en) * 2002-10-24 2004-07-13 Ppg Industries Ohio, Inc. Process for coating untreated metal substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5417877A (en) * 1991-01-25 1995-05-23 Ashland Inc. Organic stripping composition
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
CN1330395A (zh) * 2000-06-27 2002-01-09 茂德科技股份有限公司 去除光致抗蚀剂后残留物质的清除方法
WO2003006599A1 (en) * 2001-07-09 2003-01-23 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing ammonia-free fluoride salts

Also Published As

Publication number Publication date
EP1620882A1 (en) 2006-02-01
US7479474B2 (en) 2009-01-20
JP2006526895A (ja) 2006-11-24
KR20060014388A (ko) 2006-02-15
CN1802731A (zh) 2006-07-12
TW200428512A (en) 2004-12-16
US20050245409A1 (en) 2005-11-03
WO2004100245A1 (en) 2004-11-18

Similar Documents

Publication Publication Date Title
CN100442449C (zh) 半导体工艺中后蚀刻残留物的去除
TWI573867B (zh) 具有高ｗｎ／ｗ蝕刻選擇性的剝除組合物
KR100764888B1 (ko) 반도체 장치용의 유기 및 플라즈마 식각된 잔사의 세척을위한 조성물
JP4819429B2 (ja) 残留物を除去するための組成物及び方法
US7399365B2 (en) Aqueous fluoride compositions for cleaning semiconductor devices
JP4456424B2 (ja) フォトレジスト残渣及びポリマー残渣除去組成物
WO2006110645A2 (en) Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
EP1610185A2 (en) Composition and method using same for removing residue from a substrate
JP2005528660A (ja) 半導体プロセス残留物除去組成物および方法
JP2011503899A (ja) 半導体基板から金属ハードマスクエッチング残留物を除去するための組成物
JP2007519942A (ja) レジスト、ｂａｒｃ、およびギャップフィル材料を剥離する化学物質ならびに方法
KR102952187B1 (ko) 반도체 기판용 세정 조성물
TWI734149B (zh) 後蝕刻殘留物的清潔組合物及其使用方法
CN102334069B (zh) 基于多用途酸性有机溶剂的微电子清洗组合物
CN101223265A (zh) 剥离剂组合物
EP2247672A1 (en) Microelectronic substrate cleaning compositions
JP4758187B2 (ja) フォトレジスト残渣及びポリマー残渣除去液
JP4731406B2 (ja) 剥離剤組成物
JP5730790B6 (ja) 酸性、有機溶媒ベースの多目的マイクロエレクトロニクス洗浄組成物

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081210

Termination date: 20130503