JP2006520686A5 - - Google Patents
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- JP2006520686A5 JP2006520686A5 JP2006507346A JP2006507346A JP2006520686A5 JP 2006520686 A5 JP2006520686 A5 JP 2006520686A5 JP 2006507346 A JP2006507346 A JP 2006507346A JP 2006507346 A JP2006507346 A JP 2006507346A JP 2006520686 A5 JP2006520686 A5 JP 2006520686A5
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- JP
- Japan
- Prior art keywords
- porous metal
- metal layer
- intermediate porous
- separation module
- gas separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 claims 58
- 239000002184 metal Substances 0.000 claims 58
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 24
- 239000007789 gas Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 19
- 239000002131 composite material Substances 0.000 claims 16
- 150000002431 hydrogen Chemical class 0.000 claims 16
- 239000001257 hydrogen Substances 0.000 claims 16
- 229910052739 hydrogen Inorganic materials 0.000 claims 16
- 238000000926 separation method Methods 0.000 claims 16
- 239000012528 membrane Substances 0.000 claims 14
- 229910052763 palladium Inorganic materials 0.000 claims 12
- 229910045601 alloy Inorganic materials 0.000 claims 5
- 239000000956 alloy Substances 0.000 claims 5
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 5
- 229910052802 copper Inorganic materials 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 229910052709 silver Inorganic materials 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- 239000004332 silver Substances 0.000 claims 4
- 238000005296 abrasive Methods 0.000 claims 2
- 230000003213 activating Effects 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 2
- 238000007772 electroless plating Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 2
- 239000011148 porous material Substances 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 210000004940 Nucleus Anatomy 0.000 claims 1
- 239000005092 Ruthenium Substances 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 230000001590 oxidative Effects 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000009718 spray deposition Methods 0.000 claims 1
- 238000005118 spray pyrolysis Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Claims (32)
- a）多孔性金属基材；
b）中間多孔性金属層、ここで中間多孔性金属層はパラジウムを含み、かつ中間多孔性金属層は多孔性金属基材の上に存在する；および
c）高密度水素選択膜、ここで高密度水素選択膜は中間多孔性金属層の上に存在する；を含有してなる複合ガス分離モジュール。 - 多孔性金属基材がステンレス鋼またはクロムおよびニッケルを含む合金である請求項１記載の複合ガス分離モジュール。
- 合金がモリブデンをさらに含んでなる請求項２記載の複合ガス分離モジュール。
- 中間多孔性金属層がパラジウムおよび第IB族金属を含んでなる請求項１記載の複合ガス分離モジュール。
- 第IB族金属が銀または銅である請求項４記載の複合ガス分離モジュール。
- 中間多孔性金属層がパラジウムおよび第IB族金属の交互層を含んでなる請求項４記載の複合ガス分離モジュール。
- 中間多孔性金属層が少なくとも約５ミクロンの厚さである請求項１記載の複合ガス分離モジュール。
- 中間多孔性金属層が約１〜約10ミクロンの厚さである請求項１記載の複合ガス分離モジュール。
- 中間多孔性金属層の平均孔サイズが多孔性金属基材の平均孔サイズよりも小さい請求項１記載の複合ガス分離モジュール。
- 中間多孔性金属層が、頂部側および底部側を有し、中間多孔性金属層が、底部側の多孔性金属基材に直接隣接し、かつ頂部側の高密度水素選択膜に直接的に隣接する請求項１記載の複合ガス分離モジュール。
- 高密度水素選択膜がパラジウムまたはその合金を含んでなる請求項１記載の複合ガス分離モジュール。
- 多孔性金属基材に結合し、中間多孔性金属層の下に存在するセラミックの層をさらに含有してなる請求項１記載の複合ガス分離モジュール。
- a)中間多孔性金属層を多孔性金属基材上に適用する工程、ここで中間多孔性金属層はパラジウムを含む；および，
b)高密度水素選択膜を中間多孔性金属層上に適用する工程、それにより複合ガス分離モジュールを形成する工程
を含む、複合ガス分離モジュールの製造方法。 - 中間多孔性金属層を適用する前に、多孔性金属基材の表面を酸化する工程または多孔性金属基材を表面活性化する工程をさらに含む請求項１３記載の方法。
- 多孔性金属基材を表面活性化する工程が、水素選択金属の核で多孔性金属基材をシーディングすることを含む請求項１４記載の方法。
- 中間多孔性金属層が無電解メッキにより適用される請求項１３記載の方法。
- 中間多孔性金属層がパラジウムおよび第IB族金属を含む請求項１３記載の方法。
- 第IB族の金属が銀または銅である請求項１７記載の方法。
- 中間多孔性金属層が、多孔性金属基材上にパラジウムおよび第IB族金属の交互層を堆積させることにより適用される請求項１７記載の方法。
- 高密度水素選択膜を中間多孔性金属層上に適用する前に、中間多孔性金属層の表面を研磨し、それにより研磨基材を形成する工程をさらに含む請求項１３記載の方法。
- 高密度水素選択膜を中間多孔性金属層上に適用する前に、中間多孔性金属層上に水素選択金属を堆積させ、それにより被覆基材を形成する工程、および被覆基材の表面を研磨し、それにより研磨基材を形成する工程をさらに含む請求項１３記載の方法。
- 高密度水素選択膜を適用する工程が、パラジウムまたはその合金を中間多孔性金属層上に堆積することを含む請求項１３記載の方法。
- 高密度水素選択膜が、銅、銀、金、白金、ルテニウム、ロジウム、イットリウム、セリウムおよびインジウムからなる群より選ばれる少なくとも１つの金属と合金化されたパラジウムを含む請求項１３記載の方法。
- 高密度水素選択膜を適用する工程が、無電解メッキ、電解メッキ、熱蒸着、化学蒸着、噴霧蒸着、スパッタコーティング、電子線蒸発、イオンビーム蒸発および噴霧熱分解からなる群より選ばれる方法により水素選択金属を堆積させることを含む請求項１３記載の方法。
- 請求項１３記載の方法により製造された複合ガス分離モジュール。
- 水素ガス含有ガス流を複合ガス分離モジュールに指向させる工程を含み、複合ガス分離モジュールは：
a）多孔性金属基材；
b）中間多孔性金属層、ここで、中間多孔性金属層はパラジウムを含み、かつ中間多孔性金属層は多孔性金属基材上に存在する；および
c）高密度水素選択膜、ここで、高密度水素選択膜は中間多孔性金属層上に存在する；を含み、
それにより、水素ガスは高密度水素選択膜を通過することによってガス流から少なくとも部分的に分配される、水素ガス含有ガス流から水素ガスを選択的に分離する方法。 - 水素ガス製造反応体を反応させてガス流を生じさせる工程をさらに含む請求項２６記載の方法。
- セラミックの層が多孔性金属基材に結合し、中間多孔性金属層の下に存在する請求項２６記載の方法。
- 中間多孔性金属層がパラジウムおよび第IB族金属の交互層を含む請求項２６記載の方法。
- 第IB族の金属が銀または銅である請求項２６記載の方法。
- 中間多孔性金属層が約４〜約８ミクロンの厚さである請求項２６記載の方法。
- 高密度水素選択膜がパラジウムまたはその合金を含む請求項２６記載の方法。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US45706103P | 2003-03-21 | 2003-03-21 | |
| PCT/US2004/008382 WO2004085034A2 (en) | 2003-03-21 | 2004-03-19 | Composite gas separations modules having intermediate metal layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006520686A JP2006520686A (ja) | 2006-09-14 |
| JP2006520686A5 true JP2006520686A5 (ja) | 2007-05-17 |
Family
ID=33098195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006507346A Pending JP2006520686A (ja) | 2003-03-21 | 2004-03-19 | 中間金属層を有する複合ガス分離モジュール |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7175694B2 (ja) |
| EP (1) | EP1606040A2 (ja) |
| JP (1) | JP2006520686A (ja) |
| AU (1) | AU2004224370C1 (ja) |
| CA (1) | CA2519769A1 (ja) |
| NO (1) | NO20054364L (ja) |
| WO (1) | WO2004085034A2 (ja) |
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- 2004-03-19 AU AU2004224370A patent/AU2004224370C1/en not_active Ceased
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2005
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