JP2006517054A5 - - Google Patents

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Publication number
JP2006517054A5
JP2006517054A5 JP2004557131A JP2004557131A JP2006517054A5 JP 2006517054 A5 JP2006517054 A5 JP 2006517054A5 JP 2004557131 A JP2004557131 A JP 2004557131A JP 2004557131 A JP2004557131 A JP 2004557131A JP 2006517054 A5 JP2006517054 A5 JP 2006517054A5
Authority
JP
Japan
Prior art keywords
gaas substrate
microns
diffusion barrier
overlying
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004557131A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006517054A (ja
Filing date
Publication date
Priority claimed from US10/306,834 external-priority patent/US6870243B2/en
Application filed filed Critical
Publication of JP2006517054A publication Critical patent/JP2006517054A/ja
Publication of JP2006517054A5 publication Critical patent/JP2006517054A5/ja
Pending legal-status Critical Current

Links

JP2004557131A 2002-11-27 2003-09-30 銅裏面金属構造を備えるＧａＡｓ薄型ダイ Pending JP2006517054A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/306,834 US6870243B2 (en) 2002-11-27 2002-11-27 Thin GaAs die with copper back-metal structure
PCT/US2003/030861 WO2004051733A1 (en) 2002-11-27 2003-09-30 Thin gaas die with copper back-metal structure

Publications (2)

Publication Number Publication Date
JP2006517054A JP2006517054A (ja) 2006-07-13
JP2006517054A5 true JP2006517054A5 (enExample) 2006-11-24

Family

ID=32325776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004557131A Pending JP2006517054A (ja) 2002-11-27 2003-09-30 銅裏面金属構造を備えるＧａＡｓ薄型ダイ

Country Status (7)

Country Link
US (2) US6870243B2 (enExample)
JP (1) JP2006517054A (enExample)
KR (1) KR20050085143A (enExample)
CN (1) CN1720610B (enExample)
AU (1) AU2003277129A1 (enExample)
TW (1) TWI339425B (enExample)
WO (1) WO2004051733A1 (enExample)

Families Citing this family (21)

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Publication number Priority date Publication date Assignee Title
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US20050085084A1 (en) * 2003-10-16 2005-04-21 Chang Edward Y. Method of fabricating copper metallization on backside of gallium arsenide devices
US7221055B2 (en) * 2005-05-23 2007-05-22 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
US7923842B2 (en) * 2006-03-16 2011-04-12 Skyworks Solutions, Inc. GaAs integrated circuit device and method of attaching same
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US7679185B2 (en) * 2006-11-09 2010-03-16 Interplex Qlp, Inc. Microcircuit package having ductile layer
US20090108437A1 (en) * 2007-10-29 2009-04-30 M/A-Com, Inc. Wafer scale integrated thermal heat spreader
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US8987878B2 (en) * 2010-10-29 2015-03-24 Alpha And Omega Semiconductor Incorporated Substrateless power device packages
US8415805B2 (en) 2010-12-17 2013-04-09 Skyworks Solutions, Inc. Etched wafers and methods of forming the same
JP2013098481A (ja) * 2011-11-04 2013-05-20 Sumitomo Electric Device Innovations Inc 半導体装置
US8900969B2 (en) 2012-01-27 2014-12-02 Skyworks Solutions, Inc. Methods of stress balancing in gallium arsenide wafer processing
CN103377914A (zh) * 2012-04-18 2013-10-30 稳懋半导体股份有限公司 半导体元件背面铜金属的改良结构及其加工方法
US9093506B2 (en) 2012-05-08 2015-07-28 Skyworks Solutions, Inc. Process for fabricating gallium arsenide devices with copper contact layer
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US9530719B2 (en) 2014-06-13 2016-12-27 Skyworks Solutions, Inc. Direct die solder of gallium arsenide integrated circuit dies and methods of manufacturing gallium arsenide wafers
TWI660471B (zh) * 2017-10-06 2019-05-21 財團法人工業技術研究院 晶片封裝
US11133241B2 (en) 2019-06-28 2021-09-28 Stmicroelectronics, Inc. Semiconductor package with a cavity in a die pad for reducing voids in the solder
CN112989744B (zh) * 2021-02-08 2023-11-17 泰凌微电子(上海)股份有限公司 一种半导体芯片的封装设计方法以及装置

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