JP2006517054A - 銅裏面金属構造を備えるＧａＡｓ薄型ダイ - Google Patents

銅裏面金属構造を備えるＧａＡｓ薄型ダイ Download PDF

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JP2006517054A
JP2006517054A JP2004557131A JP2004557131A JP2006517054A JP 2006517054 A JP2006517054 A JP 2006517054A JP 2004557131 A JP2004557131 A JP 2004557131A JP 2004557131 A JP2004557131 A JP 2004557131A JP 2006517054 A JP2006517054 A JP 2006517054A
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Prior art keywords
die
gaas substrate
backside metal
copper
gaas
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JP2004557131A
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Japanese (ja)
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JP2006517054A5 (enExample
Inventor
ジェイ． エリオット、アレクサンダー
デール クローダー、ジェフリー
ジーン ミラー、モンテ
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NXP USA Inc
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NXP USA Inc
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Publication of JP2006517054A publication Critical patent/JP2006517054A/ja
Publication of JP2006517054A5 publication Critical patent/JP2006517054A5/ja
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004557131A 2002-11-27 2003-09-30 銅裏面金属構造を備えるＧａＡｓ薄型ダイ Pending JP2006517054A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/306,834 US6870243B2 (en) 2002-11-27 2002-11-27 Thin GaAs die with copper back-metal structure
PCT/US2003/030861 WO2004051733A1 (en) 2002-11-27 2003-09-30 Thin gaas die with copper back-metal structure

Publications (2)

Publication Number Publication Date
JP2006517054A true JP2006517054A (ja) 2006-07-13
JP2006517054A5 JP2006517054A5 (enExample) 2006-11-24

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JP2004557131A Pending JP2006517054A (ja) 2002-11-27 2003-09-30 銅裏面金属構造を備えるＧａＡｓ薄型ダイ

Country Status (7)

Country Link
US (2) US6870243B2 (enExample)
JP (1) JP2006517054A (enExample)
KR (1) KR20050085143A (enExample)
CN (1) CN1720610B (enExample)
AU (1) AU2003277129A1 (enExample)
TW (1) TWI339425B (enExample)
WO (1) WO2004051733A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028295A (ja) * 2006-07-25 2008-02-07 Toyota Central Res & Dev Lab Inc パワー半導体モジュール及びその製造方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6870243B2 (en) * 2002-11-27 2005-03-22 Freescale Semiconductor, Inc. Thin GaAs die with copper back-metal structure
US6833289B2 (en) * 2003-05-12 2004-12-21 Intel Corporation Fluxless die-to-heat spreader bonding using thermal interface material
US20050085084A1 (en) * 2003-10-16 2005-04-21 Chang Edward Y. Method of fabricating copper metallization on backside of gallium arsenide devices
US7221055B2 (en) * 2005-05-23 2007-05-22 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
US7923842B2 (en) 2006-03-16 2011-04-12 Skyworks Solutions, Inc. GaAs integrated circuit device and method of attaching same
CN100449740C (zh) * 2006-06-19 2009-01-07 上海集成电路研发中心有限公司 降低半导体器件发热的散热方法、相应器件及其制造方法
CN101641785B (zh) * 2006-11-09 2011-07-13 怡得乐Qlp公司 具有延展层的微电路封装体
US20090108437A1 (en) * 2007-10-29 2009-04-30 M/A-Com, Inc. Wafer scale integrated thermal heat spreader
JP5103245B2 (ja) 2008-03-31 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置
US8987878B2 (en) 2010-10-29 2015-03-24 Alpha And Omega Semiconductor Incorporated Substrateless power device packages
US8415805B2 (en) 2010-12-17 2013-04-09 Skyworks Solutions, Inc. Etched wafers and methods of forming the same
JP2013098481A (ja) * 2011-11-04 2013-05-20 Sumitomo Electric Device Innovations Inc 半導体装置
US8900969B2 (en) 2012-01-27 2014-12-02 Skyworks Solutions, Inc. Methods of stress balancing in gallium arsenide wafer processing
CN103377914A (zh) * 2012-04-18 2013-10-30 稳懋半导体股份有限公司 半导体元件背面铜金属的改良结构及其加工方法
US9093506B2 (en) 2012-05-08 2015-07-28 Skyworks Solutions, Inc. Process for fabricating gallium arsenide devices with copper contact layer
JP2014099547A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp 電力半導体モジュールおよびその製造方法
US9530719B2 (en) 2014-06-13 2016-12-27 Skyworks Solutions, Inc. Direct die solder of gallium arsenide integrated circuit dies and methods of manufacturing gallium arsenide wafers
TWI660471B (zh) * 2017-10-06 2019-05-21 財團法人工業技術研究院 晶片封裝
US11133241B2 (en) 2019-06-28 2021-09-28 Stmicroelectronics, Inc. Semiconductor package with a cavity in a die pad for reducing voids in the solder
CN112989744B (zh) * 2021-02-08 2023-11-17 泰凌微电子(上海)股份有限公司 一种半导体芯片的封装设计方法以及装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04225536A (ja) * 1990-12-27 1992-08-14 Nikko Kyodo Co Ltd 化合物半導体装置の製造方法
JPH05243396A (ja) * 1992-03-02 1993-09-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH06244320A (ja) * 1993-02-16 1994-09-02 Hitachi Ltd 樹脂封止型半導体装置
JPH09306932A (ja) * 1996-05-17 1997-11-28 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003045875A (ja) * 2001-07-30 2003-02-14 Nec Kagobutsu Device Kk 半導体装置およびその製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755720A (en) * 1972-09-25 1973-08-28 Rca Corp Glass encapsulated semiconductor device
US3942186A (en) * 1973-10-09 1976-03-02 Westinghouse Electric Corporation High frequency, field-effect transistor
US4321099A (en) * 1979-11-13 1982-03-23 Nasa Method of fabricating Schottky barrier solar cell
US4543442A (en) * 1983-06-24 1985-09-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration GaAs Schottky barrier photo-responsive device and method of fabrication
JPS61174723A (ja) * 1985-01-30 1986-08-06 Mitsubishi Electric Corp 半導体装置の製造方法
US4929516A (en) * 1985-03-14 1990-05-29 Olin Corporation Semiconductor die attach system
US4872047A (en) * 1986-11-07 1989-10-03 Olin Corporation Semiconductor die attach system
US4989117A (en) * 1990-02-12 1991-01-29 Rogers Corporation Molded integrated circuit package incorporating thin decoupling capacitor
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
IT1274129B (it) * 1994-11-29 1997-07-15 Soriani & Moser Manufacturers Giostra di divertimento di tipo perfezionato
JP2757805B2 (ja) 1995-01-27 1998-05-25 日本電気株式会社 半導体装置
US5528076A (en) * 1995-02-01 1996-06-18 Motorola, Inc. Leadframe having metal impregnated silicon carbide mounting area
US5622305A (en) * 1995-05-10 1997-04-22 Lucent Technologies Inc. Bonding scheme using group VB metallic layer
US6105865A (en) * 1998-07-17 2000-08-22 Hardesty; Laurence Daniel Financial transaction system with retirement saving benefit
US6010966A (en) * 1998-08-07 2000-01-04 Applied Materials, Inc. Hydrocarbon gases for anisotropic etching of metal-containing layers
JP3690171B2 (ja) * 1999-03-16 2005-08-31 株式会社日立製作所 複合材料とその製造方法及び用途
US6609106B1 (en) * 1999-05-07 2003-08-19 Steven C. Robertson System and method for providing electronic multi-merchant gift registry services over a distributed network
US6211550B1 (en) * 1999-06-24 2001-04-03 Intersil Corporation Backmetal drain terminal with low stress and thermal resistance
US6426289B1 (en) * 2000-03-24 2002-07-30 Micron Technology, Inc. Method of fabricating a barrier layer associated with a conductor layer in damascene structures
TWI248384B (en) * 2000-06-12 2006-02-01 Hitachi Ltd Electronic device
US6551852B2 (en) * 2001-06-11 2003-04-22 Micron Technology Inc. Method of forming a recessed magnetic storage element
US6583500B1 (en) * 2002-02-11 2003-06-24 Texas Instruments Incorporated Thin tin preplated semiconductor leadframes
US6787910B2 (en) * 2002-07-23 2004-09-07 National Chiao Tung University Schottky structure in GaAs semiconductor device
US6870243B2 (en) * 2002-11-27 2005-03-22 Freescale Semiconductor, Inc. Thin GaAs die with copper back-metal structure
US20040146138A1 (en) * 2003-01-23 2004-07-29 Motorola, Inc. Large flat panel gallium arsenide arrays on silicon substrate for low dose X-ray digital imaging

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04225536A (ja) * 1990-12-27 1992-08-14 Nikko Kyodo Co Ltd 化合物半導体装置の製造方法
JPH05243396A (ja) * 1992-03-02 1993-09-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH06244320A (ja) * 1993-02-16 1994-09-02 Hitachi Ltd 樹脂封止型半導体装置
JPH09306932A (ja) * 1996-05-17 1997-11-28 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003045875A (ja) * 2001-07-30 2003-02-14 Nec Kagobutsu Device Kk 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028295A (ja) * 2006-07-25 2008-02-07 Toyota Central Res & Dev Lab Inc パワー半導体モジュール及びその製造方法

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US20050127480A1 (en) 2005-06-16
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