CN1720610B - 具有铜背部金属结构的薄GaAs管芯 - Google Patents

具有铜背部金属结构的薄GaAs管芯 Download PDF

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Publication number
CN1720610B
CN1720610B CN038254352A CN03825435A CN1720610B CN 1720610 B CN1720610 B CN 1720610B CN 038254352 A CN038254352 A CN 038254352A CN 03825435 A CN03825435 A CN 03825435A CN 1720610 B CN1720610 B CN 1720610B
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Prior art keywords
gaas
layer
gaas substrate
metal layer
die
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Expired - Fee Related
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CN038254352A
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Chinese (zh)
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CN1720610A (zh
Inventor
亚历山大·J·艾里奥特
杰弗里·戴尔·克洛德
蒙特·基恩·米勒
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NXP USA Inc
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Freescale Semiconductor Inc
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
CN038254352A 2002-11-27 2003-09-30 具有铜背部金属结构的薄GaAs管芯 Expired - Fee Related CN1720610B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/306,834 US6870243B2 (en) 2002-11-27 2002-11-27 Thin GaAs die with copper back-metal structure
US10/308,334 2002-11-27
PCT/US2003/030861 WO2004051733A1 (en) 2002-11-27 2003-09-30 Thin gaas die with copper back-metal structure

Publications (2)

Publication Number Publication Date
CN1720610A CN1720610A (zh) 2006-01-11
CN1720610B true CN1720610B (zh) 2010-10-13

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CN038254352A Expired - Fee Related CN1720610B (zh) 2002-11-27 2003-09-30 具有铜背部金属结构的薄GaAs管芯

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US (2) US6870243B2 (enExample)
JP (1) JP2006517054A (enExample)
KR (1) KR20050085143A (enExample)
CN (1) CN1720610B (enExample)
AU (1) AU2003277129A1 (enExample)
TW (1) TWI339425B (enExample)
WO (1) WO2004051733A1 (enExample)

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US6833289B2 (en) * 2003-05-12 2004-12-21 Intel Corporation Fluxless die-to-heat spreader bonding using thermal interface material
US20050085084A1 (en) * 2003-10-16 2005-04-21 Chang Edward Y. Method of fabricating copper metallization on backside of gallium arsenide devices
US7221055B2 (en) * 2005-05-23 2007-05-22 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
US7923842B2 (en) 2006-03-16 2011-04-12 Skyworks Solutions, Inc. GaAs integrated circuit device and method of attaching same
CN100449740C (zh) * 2006-06-19 2009-01-07 上海集成电路研发中心有限公司 降低半导体器件发热的散热方法、相应器件及其制造方法
JP4917375B2 (ja) * 2006-07-25 2012-04-18 株式会社豊田中央研究所 パワー半導体モジュールの製造方法
CN101641785B (zh) * 2006-11-09 2011-07-13 怡得乐Qlp公司 具有延展层的微电路封装体
US20090108437A1 (en) * 2007-10-29 2009-04-30 M/A-Com, Inc. Wafer scale integrated thermal heat spreader
JP5103245B2 (ja) 2008-03-31 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置
US8987878B2 (en) 2010-10-29 2015-03-24 Alpha And Omega Semiconductor Incorporated Substrateless power device packages
US8415805B2 (en) 2010-12-17 2013-04-09 Skyworks Solutions, Inc. Etched wafers and methods of forming the same
JP2013098481A (ja) * 2011-11-04 2013-05-20 Sumitomo Electric Device Innovations Inc 半導体装置
US8900969B2 (en) 2012-01-27 2014-12-02 Skyworks Solutions, Inc. Methods of stress balancing in gallium arsenide wafer processing
CN103377914A (zh) * 2012-04-18 2013-10-30 稳懋半导体股份有限公司 半导体元件背面铜金属的改良结构及其加工方法
US9093506B2 (en) 2012-05-08 2015-07-28 Skyworks Solutions, Inc. Process for fabricating gallium arsenide devices with copper contact layer
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US7092890B2 (en) 2006-08-15
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