US5972736A - Integrated circuit package and method - Google Patents

Integrated circuit package and method Download PDF

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US5972736A
US5972736A US09/205,424 US20542498A US5972736A US 5972736 A US5972736 A US 5972736A US 20542498 A US20542498 A US 20542498A US 5972736 A US5972736 A US 5972736A
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Prior art keywords
package body
package
attaching
adhesive
semiconductor die
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US09/205,424
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Deviprasad Malladi
Mario J. Lee
Ehsan Ettehadieh
Nagaraj Mitty
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Sun Microsystems Inc
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Sun Microsystems Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • This invention relates generally to the packaging of integrated circuits. More particularly, this invention relates to a low-cost integrated circuit package with an integral heat exchanger and efficient thermal dissipation path, and the method for making the same.
  • a thermal dissipation path starts at the semiconductor die, goes through the die attach material, heat slug, heat sink attach interface, and finally through the heat sink which transfers heat to the ambient air.
  • a secondary thermal dissipation path exists through the package pins.
  • Each element along a thermal dissipation path has a corresponding thermal resistance. It is desirable to reduce the number of elements along a thermal dissipation path. It is especially desirable to eliminate high thermal resistance elements from a thermal dissipation path.
  • FIG. 1 shows a typical prior art integrated circuit package 20.
  • Package 20 includes housing 22 commonly formed of a plastic or a ceramic material. Fitted within the base of housing 22 is heat slug 24. Die attach interface 26 connects heat slug 24 to integrated circuit die 28. Bond wires 30 electrically connect integrated circuit die 28 to housing 22. Electrical signals from bond wires 30 are transferred to the outside of package 20 through package pins 32.
  • Package 20 also includes heat sink attach interface 34 to connect heat slug 24 to heat sink 36.
  • heat slug 24 and heat sink 36 provide excellent thermal dissipation.
  • die attach interface 26 and heat sink attach interface 34 constitute relatively high thermal resistance elements. It would be highly desirable to provide an integrated circuit package that eliminates at least one of these relatively high thermal resistance elements.
  • FIG. 2 is another prior art integrated circuit package which is suitable for surface mounting.
  • Package 40 includes housing 22 including conductor traces (not shown) terminating in pads to which solder balls 42 are placed, suitable for surface mounting on a printed circuit board or other type substrate.
  • Package 40 includes heat slug 46 attached to body 22 with an adhesive 34, such as a softening adhesive such as an epoxy having a low softening temperature (e.g. 150-200° C.).
  • Integrated circuit die 28 is attached to heat slug 46 utilizing a layer of die attach material (not shown).
  • This prior art package has a disadvantage in that semiconductor die 28 is attached to heat slug 46 through the die attach adhesive and, if a heat sink is to be attached to heat slug 46, an additional adhesive is used, adding to the thermal resistance between semiconductor die 28 and the heat sink.
  • liquid cooling device instead of relying upon heat sink 36 of FIG. 1 or heat slug 46 of FIG. 2, it is known in the art to use a liquid cooling device.
  • Integrated circuit packages that utilize liquid cooling devices tend to be complex structures that are expensive to manufacture.
  • liquid cooling devices may be of the type that have fluid channels in a heat exchanger that is attached to the integrated circuit package or they may rely upon elaborate bellows devices for interfacing with the integrated circuit package.
  • Other types of liquid cooling schemes include immersing the integrated circuits themselves in a cooling fluid, the use of thermosiphons, and the use of heat pipes. Each of these approaches results in a bulky device that is difficult and expensive to manufacture. It would be highly desirable to provide a compact liquid cooled integrated circuit package of reduced complexity that is inexpensive to manufacture.
  • the invention is an integrated circuit package with an integral heat exchanger which is more directly thermally coupled to the semiconductor die.
  • the package is assembled including a heat slug or other attaching mechanism which is attached to the package body with a low temperature softening material which can withstand temperatures encountered during normal assembly operations, and which will soften at a temperature not much higher.
  • the semiconductor die is attached to this heat slug in a cavity of the package body, and bond wires are connected between bond pads on the semiconductor die and electrical interconnects on the package. Solder balls are formed either before or after die attach and/or wire bonding or encapsulation.
  • the semiconductor die, once wire bonded, is encapsulated utilizing a suitable encapsulating material.
  • the heat slug is then removed utilizing a temperature higher than normally utilized during assembly but lower than the temperature which will cause damage to the thus far assembled package.
  • the back side of the semiconductor die is thus exposed, and if desired is cleaned chemically or mechanically to provide a good thermal surface to which a heat sink or other thermal dissipation element is attached.
  • FIG. 1 is a prior art integrated circuit package with a finned heat sink.
  • FIG. 2 is another prior art integrated circuit package with an integral heat slug and solder balls for surface mounting.
  • FIGS. 3a-3e are cross sectional views of one embodiment of the invention, as it is assembled.
  • package body 22 includes one or more land areas 119 having exposed electrical pads for wire bonding between a semiconductor die (not shown) and those land areas.
  • the land areas are connected by a conductive pattern to areas to which solder balls 42 are affixed, allowing for the later surface mounting of the completed device to a printed circuit board or other substrate.
  • solder balls 42 are shown affixed to package body 22 at an initial stage of the assembly process, although it is to be understood that solder balls 42 can, if desired, be formed at appropriate locations in a well known manner at any desired step in the assembly process.
  • Attached to package body 22 is heat slug 146, or any other suitable attaching mechanism.
  • Suitable materials for attaching mechanism 146 include copper, aluminum, alloys thereof, and various plastics.
  • Attaching mechanism 146 is attached to package body 22 by a low softening temperature adhesive 134, such as epoxy or polyurethane, polyphenylene oxide or any thermo plastic material with melting point less than about 200° C., which can withstand temperature encountered during normal assembly operations, for example up to approximately 150-200° C.
  • the die attach operation by which semiconductor die 28 is attached to attaching mechanism 146 utilizing die attach adhesive 138 which is applied at a temperature not exceeding the softening temperature of low temperature softening adhesive 134.
  • Typical die attach adhesives include epoxy, polyamide, metal filled polymer, a ceramic filled polymer, a diamond filled polymer, silver glass, solder, braze alloy, or activated nitride films. Note that while it is stated that temperatures do not exceed the softening temperatures of the adhesive used to attach mechanism 146 to the package body, it is of course to be understood that this means during the brief period of time during which the die attach operation takes place, as the entire body and attaching mechanism may not fully heat up during this short time period.
  • wire bonding is performed so that a plurality of wire bonds 30 are formed between the electrical interconnects on package body 22 and bond pads on semiconductor die 28.
  • semiconductor die 28 and bond wires 30 are now encapsulated by applying a suitable encapsulating material 49, such as an epoxy, as is well known.
  • a suitable encapsulating material 49 such as an epoxy
  • this epoxy does not soften at the softening temperatures of low softening temperature adhesive 134, although this need not be necessary as only a small amount of heat is transferred to encapsulating material 49 when attaching mechanism 146 is later removed.
  • This encapsulation material 49 serves to protect semiconductor die 28 and bond wires 30 and also serves to attach semiconductor die 28 to package body 22 during the next step of this invention during which attaching mechanism 146 is removed, as shown in FIG. 3d.
  • Attaching mechanism 146 is removed by increasing the temperature of the structure above the temperature at which low temperature softening material 134 (FIG. 3c) softens, allowing attaching mechanism 146 to be easily removed from package body 22 without disturbing semiconductor die 28 which is held in place by encapsulation material 49. In one embodiment, since this temperature at which low temperature softening material 134 softens is above the softening temperature of die attach adhesive 138, a good portion of die attach adhesive 138 is removed at this time as well. If desired, a suitable mechanical or chemical cleaning of the backside of semiconductor die 28 and, if desired, the backside of package body 22 is now performed to improve the cleanliness and thus thermal conductivity of those portions of the structure. In one embodiment, such mechanical cleaning is accomplished by scraping or lapping. In another embodiment, as an alternative or in addition to such mechanical cleaning, chemical cleaning of those areas.
  • heat sink 196 is now attached to the backside of semiconductor die 28 and package body 22 utilizing a single layer of adhesive 234, which preferably has as high a thermal conductivity as practical.
  • adhesive 234 comprises epoxy or polyurethane, polyphenylene oxide or any thermo plastic material with melting point less than about 200° C.
  • a thermal grease is used, with mechanical clamps holding heat sink 196 in close fixed contact with package body 22.
  • Package body 22 of the invention may be formed of any of the usual materials used for this purpose, such as alumina, glass-ceramic, and polymers with appropriate metal interconnection layers.
  • Heat sink 196 may be formed of copper, dispersion hardened copper, alumina, copper-tungsten, copper-molybdenum, or copper-diamond.
  • FIGS. 3a-3e First, it eliminates one thermal interface from the cooling path. That is, prior art use of heat slug adhesive 34 and die attach adhesive 38 (FIG. 2) are replaced by a single layer of high thermal conductivity adhesive 234 (FIG. 3e).
  • Another advantage associated with the invention is that standard packaging fabrication techniques may be used.
  • the apparatus of the invention is relatively easy to manufacture.
  • semiconductor die 28 is maintained such that its backside is at the same level as the backside of package body 22, allowing heat sink 196 to be attached to the backside of package body 22 and the backside of semiconductor die 28, which are at substantially the same level, in a fashion which distributes stresses substantially evenly. This minimizes the thickness of adhesive 234 which must exist between semiconductor die 28 and heat sink 196. It has been determined that the thermal resistance between semiconductor die 28 and heat sink 196 is reduced on the order of 0.5° C./watt as compared with the prior art structures of FIG. 2. This means that for a semiconductor die 28 operating at a power dissipation of 30 watts, semiconductor die 28 is able to run 15° C. cooler than possible utilizing the prior art of FIG. 2.
  • the structure of this invention is capable of being fully assembled, including wire bonding and the like, and later attached to physical large heat sinks which are capable of dissipating a significant amount of heat. This is a distinct advantage over the prior art where large heat sinks cannot be utilized by their attachment at an early stage during the process, as a package with such a large heat sink cannot be properly or reliably placed in a wire bond machine.

Abstract

An integrated circuit package with heat slug is disclosed. The heat slug is thermally coupled to one or more semiconductor die using a single layer of high conductivity adhesive. The assembly process of this invention includes the steps of initially attaching a temporary heat slug to the back side of a package body, to which one or more semiconductor die are attached. The semiconductor die are then electrically connected to the package body and encapsulated to maintain fixed positions within the package cavity. The temporary heat slug is then moved and a final heat slug is attached to the package body and the back side of the one or more semiconductor dies utilizing a single layer of high conductivity adhesive. The package is compact, has reduced complexity, and is inexpensive to manufacture.

Description

This application is a divisional application of U.S. Ser. No. 08/959,957; filed Oct. 24, 1997; which is a continuation application of U.S. Ser. No. 08/661,859 now abandoned; filed Jun. 11, 1996; which is a file wrapper continuation application of U.S. Ser. No. 08/361,145 now abandoned; filed Dec. 21, 1994.
FIELD OF THE INVENTION
This invention relates generally to the packaging of integrated circuits. More particularly, this invention relates to a low-cost integrated circuit package with an integral heat exchanger and efficient thermal dissipation path, and the method for making the same.
DESCRIPTION OF PRIOR ART
The evolution of integrated circuit technology continues to increase transistor speed and density. Specifically, advances in integrated circuit fabrication technology have resulted in chips with high clock speeds, high levels of integration, high power consumption, large numbers of inputs and outputs, and large dies. All of the factors have increased the need for packages with efficient thermal dissipation in order to maintain acceptable junction temperatures for chip speed and reliability. Maintaining a low junction temperature, less than 100° C. for typical chips, is necessary for high performance and reliability. The operating speed of an integrated circuit is inversely proportional to the die temperature. As the temperature increases, carrier mobility decreases, causing transistors to slow down. In addition, as metal resistance rises with temperature, interconnect delays increase. Static leakage currents also increase with temperature. Common reliability problems like electromigration, oxide breakdown and hot electron effects are more severe at higher temperatures.
In a typical package, a thermal dissipation path starts at the semiconductor die, goes through the die attach material, heat slug, heat sink attach interface, and finally through the heat sink which transfers heat to the ambient air. A secondary thermal dissipation path exists through the package pins. Each element along a thermal dissipation path has a corresponding thermal resistance. It is desirable to reduce the number of elements along a thermal dissipation path. It is especially desirable to eliminate high thermal resistance elements from a thermal dissipation path.
FIG. 1 shows a typical prior art integrated circuit package 20. Package 20 includes housing 22 commonly formed of a plastic or a ceramic material. Fitted within the base of housing 22 is heat slug 24. Die attach interface 26 connects heat slug 24 to integrated circuit die 28. Bond wires 30 electrically connect integrated circuit die 28 to housing 22. Electrical signals from bond wires 30 are transferred to the outside of package 20 through package pins 32. Package 20 also includes heat sink attach interface 34 to connect heat slug 24 to heat sink 36.
In the apparatus of FIG. 1, heat slug 24 and heat sink 36 provide excellent thermal dissipation. On the other hand, die attach interface 26 and heat sink attach interface 34 constitute relatively high thermal resistance elements. It would be highly desirable to provide an integrated circuit package that eliminates at least one of these relatively high thermal resistance elements.
FIG. 2 is another prior art integrated circuit package which is suitable for surface mounting. Package 40 includes housing 22 including conductor traces (not shown) terminating in pads to which solder balls 42 are placed, suitable for surface mounting on a printed circuit board or other type substrate. Package 40 includes heat slug 46 attached to body 22 with an adhesive 34, such as a softening adhesive such as an epoxy having a low softening temperature (e.g. 150-200° C.). Integrated circuit die 28 is attached to heat slug 46 utilizing a layer of die attach material (not shown). This prior art package has a disadvantage in that semiconductor die 28 is attached to heat slug 46 through the die attach adhesive and, if a heat sink is to be attached to heat slug 46, an additional adhesive is used, adding to the thermal resistance between semiconductor die 28 and the heat sink.
Instead of relying upon heat sink 36 of FIG. 1 or heat slug 46 of FIG. 2, it is known in the art to use a liquid cooling device. Integrated circuit packages that utilize liquid cooling devices tend to be complex structures that are expensive to manufacture. For example, liquid cooling devices may be of the type that have fluid channels in a heat exchanger that is attached to the integrated circuit package or they may rely upon elaborate bellows devices for interfacing with the integrated circuit package. Other types of liquid cooling schemes include immersing the integrated circuits themselves in a cooling fluid, the use of thermosiphons, and the use of heat pipes. Each of these approaches results in a bulky device that is difficult and expensive to manufacture. It would be highly desirable to provide a compact liquid cooled integrated circuit package of reduced complexity that is inexpensive to manufacture.
SUMMARY
The invention is an integrated circuit package with an integral heat exchanger which is more directly thermally coupled to the semiconductor die. The package is assembled including a heat slug or other attaching mechanism which is attached to the package body with a low temperature softening material which can withstand temperatures encountered during normal assembly operations, and which will soften at a temperature not much higher.
The semiconductor die is attached to this heat slug in a cavity of the package body, and bond wires are connected between bond pads on the semiconductor die and electrical interconnects on the package. Solder balls are formed either before or after die attach and/or wire bonding or encapsulation. The semiconductor die, once wire bonded, is encapsulated utilizing a suitable encapsulating material. The heat slug is then removed utilizing a temperature higher than normally utilized during assembly but lower than the temperature which will cause damage to the thus far assembled package. The back side of the semiconductor die is thus exposed, and if desired is cleaned chemically or mechanically to provide a good thermal surface to which a heat sink or other thermal dissipation element is attached.
BRIEF DESCRIPTION OF THE DRAWINGS
For a better understanding of the nature and objects of the invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a prior art integrated circuit package with a finned heat sink.
FIG. 2 is another prior art integrated circuit package with an integral heat slug and solder balls for surface mounting.
FIGS. 3a-3e are cross sectional views of one embodiment of the invention, as it is assembled.
Like reference numerals refer to corresponding parts throughout the several views of the drawings.
DETAILED DESCRIPTION
Referring to FIGS. 3a-3e, an exemplary process of this invention is illustrated, together with the resulting structures. As shown in FIG. 3a, package body 22 includes one or more land areas 119 having exposed electrical pads for wire bonding between a semiconductor die (not shown) and those land areas. The land areas are connected by a conductive pattern to areas to which solder balls 42 are affixed, allowing for the later surface mounting of the completed device to a printed circuit board or other substrate. In this embodiment, solder balls 42 are shown affixed to package body 22 at an initial stage of the assembly process, although it is to be understood that solder balls 42 can, if desired, be formed at appropriate locations in a well known manner at any desired step in the assembly process.
Attached to package body 22 is heat slug 146, or any other suitable attaching mechanism. Suitable materials for attaching mechanism 146 include copper, aluminum, alloys thereof, and various plastics. Attaching mechanism 146 is attached to package body 22 by a low softening temperature adhesive 134, such as epoxy or polyurethane, polyphenylene oxide or any thermo plastic material with melting point less than about 200° C., which can withstand temperature encountered during normal assembly operations, for example up to approximately 150-200° C.
Referring to FIG. 3b, the next step in the assembly process is the die attach operation, by which semiconductor die 28 is attached to attaching mechanism 146 utilizing die attach adhesive 138 which is applied at a temperature not exceeding the softening temperature of low temperature softening adhesive 134. Typical die attach adhesives include epoxy, polyamide, metal filled polymer, a ceramic filled polymer, a diamond filled polymer, silver glass, solder, braze alloy, or activated nitride films. Note that while it is stated that temperatures do not exceed the softening temperatures of the adhesive used to attach mechanism 146 to the package body, it is of course to be understood that this means during the brief period of time during which the die attach operation takes place, as the entire body and attaching mechanism may not fully heat up during this short time period.
As shown in FIG. 3b, once semiconductor die 28 is attached, wire bonding is performed so that a plurality of wire bonds 30 are formed between the electrical interconnects on package body 22 and bond pads on semiconductor die 28.
Referring to FIG. 3c, semiconductor die 28 and bond wires 30 are now encapsulated by applying a suitable encapsulating material 49, such as an epoxy, as is well known. In one embodiment, this epoxy does not soften at the softening temperatures of low softening temperature adhesive 134, although this need not be necessary as only a small amount of heat is transferred to encapsulating material 49 when attaching mechanism 146 is later removed. This encapsulation material 49 serves to protect semiconductor die 28 and bond wires 30 and also serves to attach semiconductor die 28 to package body 22 during the next step of this invention during which attaching mechanism 146 is removed, as shown in FIG. 3d.
Attaching mechanism 146 is removed by increasing the temperature of the structure above the temperature at which low temperature softening material 134 (FIG. 3c) softens, allowing attaching mechanism 146 to be easily removed from package body 22 without disturbing semiconductor die 28 which is held in place by encapsulation material 49. In one embodiment, since this temperature at which low temperature softening material 134 softens is above the softening temperature of die attach adhesive 138, a good portion of die attach adhesive 138 is removed at this time as well. If desired, a suitable mechanical or chemical cleaning of the backside of semiconductor die 28 and, if desired, the backside of package body 22 is now performed to improve the cleanliness and thus thermal conductivity of those portions of the structure. In one embodiment, such mechanical cleaning is accomplished by scraping or lapping. In another embodiment, as an alternative or in addition to such mechanical cleaning, chemical cleaning of those areas.
As shown in FIG. 3e, heat sink 196 is now attached to the backside of semiconductor die 28 and package body 22 utilizing a single layer of adhesive 234, which preferably has as high a thermal conductivity as practical. In one embodiment of this invention, adhesive 234 comprises epoxy or polyurethane, polyphenylene oxide or any thermo plastic material with melting point less than about 200° C. In an alternative embodiment, a thermal grease is used, with mechanical clamps holding heat sink 196 in close fixed contact with package body 22.
While this embodiment has been described with respect to a single semiconductor die 28 electrically connected to portions of package body 22 by bond wires 30, it will be appreciated by those of ordinary skill in the art in light of the teachings of this specification that a plurality of semiconductor die 28 can be used in place of a single semiconductor die as shown in FIGS. 3a through 3e, thereby forming a multi-chip module. Furthermore, such bond wires 30 associated with either a single or a plurality of semiconductor dies can be replaced with any of a number of well known electrical interconnect techniques, including tape automated boding (TAB) or the like.
Package body 22 of the invention may be formed of any of the usual materials used for this purpose, such as alumina, glass-ceramic, and polymers with appropriate metal interconnection layers. Heat sink 196 may be formed of copper, dispersion hardened copper, alumina, copper-tungsten, copper-molybdenum, or copper-diamond.
Those skilled in the art will recognize a number of benefits associated with the apparatus of FIGS. 3a-3e. First, it eliminates one thermal interface from the cooling path. That is, prior art use of heat slug adhesive 34 and die attach adhesive 38 (FIG. 2) are replaced by a single layer of high thermal conductivity adhesive 234 (FIG. 3e).
Another advantage associated with the invention is that standard packaging fabrication techniques may be used. Thus, the apparatus of the invention is relatively easy to manufacture.
In accordance with the teachings of this invention, semiconductor die 28 is maintained such that its backside is at the same level as the backside of package body 22, allowing heat sink 196 to be attached to the backside of package body 22 and the backside of semiconductor die 28, which are at substantially the same level, in a fashion which distributes stresses substantially evenly. This minimizes the thickness of adhesive 234 which must exist between semiconductor die 28 and heat sink 196. It has been determined that the thermal resistance between semiconductor die 28 and heat sink 196 is reduced on the order of 0.5° C./watt as compared with the prior art structures of FIG. 2. This means that for a semiconductor die 28 operating at a power dissipation of 30 watts, semiconductor die 28 is able to run 15° C. cooler than possible utilizing the prior art of FIG. 2.
As an additional advantage of this invention, the structure of this invention is capable of being fully assembled, including wire bonding and the like, and later attached to physical large heat sinks which are capable of dissipating a significant amount of heat. This is a distinct advantage over the prior art where large heat sinks cannot be utilized by their attachment at an early stage during the process, as a package with such a large heat sink cannot be properly or reliably placed in a wire bond machine.
The foregoing descriptions of specific embodiments of the present invention are presented for purposes of illustration and description. They are not intended to be exhaustive or to limit the invention to the precise forms disclosed, obviously many modifications and variations are possible in view of the above teachings. For instance, it should be appreciated that the present invention can also be used in a liquid cooling context, such as is described in copending U.S. patent application Ser. No. 08/282,985, filed Jul. 29, 1994. The embodiments were chosen and described in order to best explain the principles of the invention and its practical applications, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the following claims and their equivalents.

Claims (8)

We claim:
1. A method for making a semiconductor device comprising the steps of:
attaching one or more semiconductor dies, within a cavity of a package body, to an attaching mechanism which is attached to the back of said package body;
placing bond wires between said one or more semiconductor dies and said package body;
applying an adhesive within said cavity to mechanically attach said one or more semiconductor dies to said package body;
removing said attaching mechanism from said back of said package body and the back of said one or more semiconductor dies; and
attaching a heat sink to said package body and in substantial contact with said back of said one or more semiconductor dies.
2. A method as in claim 1 wherein said step of attaching said one or more semiconductor dies comprises the step of attaching with a material selected from the group of materials including: epoxy and polyurethane die attach adhesives.
3. A method as in claim 1 wherein said step of removing said attaching mechanism comprises the step of heating to a temperature sufficiently high to soften an adhesive between said package body and said attaching mechanism.
4. A method as in claim 3 wherein said temperature is not sufficiently high to disturb said adhesive within said cavity.
5. A method as in claim 3 wherein said adhesive between said package body and said attaching mechanism comprises a material selected from the group consisting essentially of epoxy, polyurethane, polyphenylene oxide and any thermoplastic material with melting point less than about 200° C.
6. A method as in claim 3 wherein said temperature is within the range of approximately 150-200° C.
7. A method as in claim 1 which further comprises the step of, prior to attaching said heat sink, cleaning said back of said package body and said back of said one or more semiconductor dies.
8. A method as in claim 7 wherein said step of cleaning comprises a mechanical or chemical cleaning.
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Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190945B1 (en) * 1998-05-21 2001-02-20 Micron Technology, Inc. Integrated heat sink
US6288444B1 (en) * 1998-11-17 2001-09-11 Fujitsu Limited Semiconductor device and method of producing the same
US6395582B1 (en) * 1997-07-14 2002-05-28 Signetics Methods for forming ground vias in semiconductor packages
US6436733B2 (en) * 1998-08-10 2002-08-20 Sony Corporation Bonding layer method in a semiconductor device
US6436737B1 (en) 2000-06-29 2002-08-20 Sun Microsystems, Inc. Method for reducing soft error rates in semiconductor devices
US20030064542A1 (en) * 2001-10-02 2003-04-03 Corisis David J. Methods of packaging an integrated circuit
US6545351B1 (en) * 1998-07-21 2003-04-08 Intel Corporation Underside heat slug for ball grid array packages
US20030122223A1 (en) * 1998-04-02 2003-07-03 Akio Nakamura Semiconductor device in a recess of a semiconductor plate
US20030143781A1 (en) * 2002-01-31 2003-07-31 Mclellan Neil Robert Encapsulated integrated circuit package and method of manufacturing an integrated circuit package
US20040014317A1 (en) * 2000-09-25 2004-01-22 Hajime Sakamoto Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20040155360A1 (en) * 1999-09-02 2004-08-12 Salman Akram Board-on-chip packages
US20040207060A1 (en) * 1999-02-19 2004-10-21 Corisis David J. Integrated circuit packages, ball-grid array integrated circuit packages and methods of packaging an integrated circuit
US6838315B2 (en) * 2000-08-30 2005-01-04 Renesas Technology Corporation Semiconductor device manufacturing method wherein electrode members are exposed from a mounting surface of a resin encapsulator
US20050098879A1 (en) * 2003-11-11 2005-05-12 Hyeong-Seob Kim Semiconductor package having ultra-thin thickness and method of manufacturing the same
US20050211752A1 (en) * 2004-03-23 2005-09-29 Intel Corporation Metallic solder thermal interface material layer and application of the same
US6982485B1 (en) * 2002-02-13 2006-01-03 Amkor Technology, Inc. Stacking structure for semiconductor chips and a semiconductor package using it
US7002236B2 (en) * 2000-07-07 2006-02-21 Sony Corporation Semiconductor package and method for producing the same
US20060065387A1 (en) * 2004-09-28 2006-03-30 General Electric Company Electronic assemblies and methods of making the same
US20060103010A1 (en) * 2004-11-12 2006-05-18 Stats Chippac Ltd. Semiconductor package system with substrate heat sink
US7135782B2 (en) * 2001-12-03 2006-11-14 Sharp Kabushiki Kaisha Semiconductor module and production method therefor and module for IC cards and the like
US20060262500A1 (en) * 2005-05-19 2006-11-23 High Tech Computer, Corp. Portable electronic device
US20070080441A1 (en) * 2005-08-18 2007-04-12 Scott Kirkman Thermal expansion compensation graded IC package
WO2007050471A2 (en) * 2005-10-25 2007-05-03 Freescale Semiconductor Inc. Method for forming solder contacts on mounted substrates
US20070227765A1 (en) * 2000-02-25 2007-10-04 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US20070293033A1 (en) * 2006-06-14 2007-12-20 Hill Darrell G Microelectronic assembly with back side metallization and method for forming the same
US20110024895A1 (en) * 2007-11-02 2011-02-03 Texas Instruments Incorporated Semiconductor Package Thermal Performance Enhancement and Method
US8217557B2 (en) * 2010-08-31 2012-07-10 Micron Technology, Inc. Solid state lights with thermosiphon liquid cooling structures and methods
US20150136357A1 (en) * 2013-11-21 2015-05-21 Honeywell Federal Manufacturing & Technologies, Llc Heat dissipation assembly
US20170165718A1 (en) * 2015-12-10 2017-06-15 Global Unichip Corporation Cleaning apparatus

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698662A (en) * 1985-02-05 1987-10-06 Gould Inc. Multichip thin film module
JPS6381956A (en) * 1986-09-26 1988-04-12 Hitachi Ltd Package for semiconductor device
JPS63182844A (en) * 1987-01-23 1988-07-28 Nec Corp Semiconductor device
US4876588A (en) * 1987-09-16 1989-10-24 Nec Corporation Semiconductor device having ceramic package incorporated with a heat-radiator
US4926242A (en) * 1984-10-03 1990-05-15 Sumitomo Electric Industries, Ltd. Aluminum-silicon alloy heatsink for semiconductor devices
US5012386A (en) * 1989-10-27 1991-04-30 Motorola, Inc. High performance overmolded electronic package
JPH03212961A (en) * 1990-01-18 1991-09-18 Matsushita Electric Works Ltd Semiconductor chip carrier
US5109317A (en) * 1989-11-07 1992-04-28 Hitachi, Ltd. Mounting mechanism for mounting heat sink on multi-chip module
US5198889A (en) * 1990-06-30 1993-03-30 Kabushiki Kaisha Toshiba Cooling apparatus
US5345107A (en) * 1989-09-25 1994-09-06 Hitachi, Ltd. Cooling apparatus for electronic device
US5362680A (en) * 1992-08-18 1994-11-08 Texas Instruments Incorporated Technique for enhancing adhesion capability of heat spreaders in molded packages
US5367193A (en) * 1993-06-17 1994-11-22 Sun Microsystems, Inc. Low cost, thermally efficient, and surface mountable semiconductor package for a high applied power VLSI die
US5404273A (en) * 1993-03-23 1995-04-04 Shinko Electric Industries Co., Ltd. Semiconductor-device package and semiconductor device
US5672548A (en) * 1994-07-11 1997-09-30 International Business Machines Corporation Method for attaching heat sinks directly to chip carrier modules using flexible-epoxy

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926242A (en) * 1984-10-03 1990-05-15 Sumitomo Electric Industries, Ltd. Aluminum-silicon alloy heatsink for semiconductor devices
US4698662A (en) * 1985-02-05 1987-10-06 Gould Inc. Multichip thin film module
JPS6381956A (en) * 1986-09-26 1988-04-12 Hitachi Ltd Package for semiconductor device
JPS63182844A (en) * 1987-01-23 1988-07-28 Nec Corp Semiconductor device
US4876588A (en) * 1987-09-16 1989-10-24 Nec Corporation Semiconductor device having ceramic package incorporated with a heat-radiator
US5345107A (en) * 1989-09-25 1994-09-06 Hitachi, Ltd. Cooling apparatus for electronic device
US5012386A (en) * 1989-10-27 1991-04-30 Motorola, Inc. High performance overmolded electronic package
US5109317A (en) * 1989-11-07 1992-04-28 Hitachi, Ltd. Mounting mechanism for mounting heat sink on multi-chip module
JPH03212961A (en) * 1990-01-18 1991-09-18 Matsushita Electric Works Ltd Semiconductor chip carrier
US5198889A (en) * 1990-06-30 1993-03-30 Kabushiki Kaisha Toshiba Cooling apparatus
US5362680A (en) * 1992-08-18 1994-11-08 Texas Instruments Incorporated Technique for enhancing adhesion capability of heat spreaders in molded packages
US5404273A (en) * 1993-03-23 1995-04-04 Shinko Electric Industries Co., Ltd. Semiconductor-device package and semiconductor device
US5367193A (en) * 1993-06-17 1994-11-22 Sun Microsystems, Inc. Low cost, thermally efficient, and surface mountable semiconductor package for a high applied power VLSI die
US5672548A (en) * 1994-07-11 1997-09-30 International Business Machines Corporation Method for attaching heat sinks directly to chip carrier modules using flexible-epoxy

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"Electronic Packaging & Interconnection Handbook" by Charles A. Harper, Dated Nov. 3, 1992, Published by: McGraw-Hill, Inc. Subject: Hybrid Microelectronic Packaging.
Electronic Packaging & Interconnection Handbook by Charles A. Harper, Dated Nov. 3, 1992, Published by: McGraw Hill, Inc. Subject: Hybrid Microelectronic Packaging. *

Cited By (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395582B1 (en) * 1997-07-14 2002-05-28 Signetics Methods for forming ground vias in semiconductor packages
US7183132B2 (en) * 1998-04-02 2007-02-27 Oki Electric Industry Co., Ltd. Semiconductor device in a recess of a semiconductor plate
US20030122223A1 (en) * 1998-04-02 2003-07-03 Akio Nakamura Semiconductor device in a recess of a semiconductor plate
US6190945B1 (en) * 1998-05-21 2001-02-20 Micron Technology, Inc. Integrated heat sink
US6545351B1 (en) * 1998-07-21 2003-04-08 Intel Corporation Underside heat slug for ball grid array packages
US6436733B2 (en) * 1998-08-10 2002-08-20 Sony Corporation Bonding layer method in a semiconductor device
US6288444B1 (en) * 1998-11-17 2001-09-11 Fujitsu Limited Semiconductor device and method of producing the same
US6856013B1 (en) 1999-02-19 2005-02-15 Micron Technology, Inc. Integrated circuit packages, ball-grid array integrated circuit packages and methods of packaging an integrated circuit
US6939739B2 (en) 1999-02-19 2005-09-06 Micron Technology, Inc. Integrated circuit packages, ball-grid array integrated circuit packages and methods of packaging an integrated circuit
US20040207060A1 (en) * 1999-02-19 2004-10-21 Corisis David J. Integrated circuit packages, ball-grid array integrated circuit packages and methods of packaging an integrated circuit
US7443022B2 (en) 1999-09-02 2008-10-28 Micron Technology, Inc. Board-on-chip packages
US20040155360A1 (en) * 1999-09-02 2004-08-12 Salman Akram Board-on-chip packages
US6917107B2 (en) 1999-09-02 2005-07-12 Micron Technology, Inc. Board-on-chip packages
US6825550B2 (en) 1999-09-02 2004-11-30 Micron Technology, Inc. Board-on-chip packages with conductive foil on the chip surface
US6900077B2 (en) * 1999-09-02 2005-05-31 Micron Technology, Inc. Methods of forming board-on-chip packages
US7888606B2 (en) 2000-02-25 2011-02-15 Ibiden Co., Ltd. Multilayer printed circuit board
US20100031503A1 (en) * 2000-02-25 2010-02-11 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US20080151517A1 (en) * 2000-02-25 2008-06-26 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US8453323B2 (en) 2000-02-25 2013-06-04 Ibiden Co., Ltd. Printed circuit board manufacturing method
US8438727B2 (en) 2000-02-25 2013-05-14 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US8186045B2 (en) 2000-02-25 2012-05-29 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US8079142B2 (en) 2000-02-25 2011-12-20 Ibiden Co., Ltd. Printed circuit board manufacturing method
US20070227765A1 (en) * 2000-02-25 2007-10-04 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US8046914B2 (en) 2000-02-25 2011-11-01 Ibiden Co., Ltd. Method for manufacturing multilayer printed circuit board
US20080151520A1 (en) * 2000-02-25 2008-06-26 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US7888605B2 (en) 2000-02-25 2011-02-15 Ibiden Co., Ltd. Multilayer printed circuit board
US7884286B2 (en) 2000-02-25 2011-02-08 Ibiden Co., Ltd. Multilayer printed circuit board
US7842887B2 (en) 2000-02-25 2010-11-30 Ibiden Co., Ltd. Multilayer printed circuit board
US20080151519A1 (en) * 2000-02-25 2008-06-26 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US20100018049A1 (en) * 2000-02-25 2010-01-28 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US20090070996A1 (en) * 2000-02-25 2009-03-19 Ibiden Co., Ltd. Printed circuit board manufacturing method
US20080201944A1 (en) * 2000-02-25 2008-08-28 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US6436737B1 (en) 2000-06-29 2002-08-20 Sun Microsystems, Inc. Method for reducing soft error rates in semiconductor devices
US7002236B2 (en) * 2000-07-07 2006-02-21 Sony Corporation Semiconductor package and method for producing the same
US6838315B2 (en) * 2000-08-30 2005-01-04 Renesas Technology Corporation Semiconductor device manufacturing method wherein electrode members are exposed from a mounting surface of a resin encapsulator
US20090077796A1 (en) * 2000-09-25 2009-03-26 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US8524535B2 (en) 2000-09-25 2013-09-03 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20080151522A1 (en) * 2000-09-25 2008-06-26 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US9245838B2 (en) 2000-09-25 2016-01-26 Ibiden Co., Ltd. Semiconductor element
US20080148563A1 (en) * 2000-09-25 2008-06-26 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US8959756B2 (en) 2000-09-25 2015-02-24 Ibiden Co., Ltd. Method of manufacturing a printed circuit board having an embedded electronic component
US20070209831A1 (en) * 2000-09-25 2007-09-13 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20080169123A1 (en) * 2000-09-25 2008-07-17 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20080206926A1 (en) * 2000-09-25 2008-08-28 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US8822323B2 (en) 2000-09-25 2014-09-02 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20080230914A1 (en) * 2000-09-25 2008-09-25 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US8293579B2 (en) * 2000-09-25 2012-10-23 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20040014317A1 (en) * 2000-09-25 2004-01-22 Hajime Sakamoto Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US8067699B2 (en) 2000-09-25 2011-11-29 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20090263939A1 (en) * 2000-09-25 2009-10-22 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US7999387B2 (en) 2000-09-25 2011-08-16 Ibiden Co., Ltd. Semiconductor element connected to printed circuit board
US7908745B2 (en) 2000-09-25 2011-03-22 Ibiden Co., Ltd. Method of manufacturing multi-layer printed circuit board
US7893360B2 (en) 2000-09-25 2011-02-22 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20100140803A1 (en) * 2000-09-25 2010-06-10 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US7855342B2 (en) 2000-09-25 2010-12-21 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US7852634B2 (en) 2000-09-25 2010-12-14 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US20030064542A1 (en) * 2001-10-02 2003-04-03 Corisis David J. Methods of packaging an integrated circuit
US7135782B2 (en) * 2001-12-03 2006-11-14 Sharp Kabushiki Kaisha Semiconductor module and production method therefor and module for IC cards and the like
US20030143781A1 (en) * 2002-01-31 2003-07-31 Mclellan Neil Robert Encapsulated integrated circuit package and method of manufacturing an integrated circuit package
US6790710B2 (en) * 2002-01-31 2004-09-14 Asat Limited Method of manufacturing an integrated circuit package
US6982485B1 (en) * 2002-02-13 2006-01-03 Amkor Technology, Inc. Stacking structure for semiconductor chips and a semiconductor package using it
US20050098879A1 (en) * 2003-11-11 2005-05-12 Hyeong-Seob Kim Semiconductor package having ultra-thin thickness and method of manufacturing the same
US7105919B2 (en) * 2003-11-11 2006-09-12 Samsung Electronics Co., Ltd. Semiconductor package having ultra-thin thickness and method of manufacturing the same
US20060249823A1 (en) * 2003-11-11 2006-11-09 Samsung Electronics Co., Ltd. Semiconductor package having ultra-thin thickness and method of manufacturing the same
US20050211752A1 (en) * 2004-03-23 2005-09-29 Intel Corporation Metallic solder thermal interface material layer and application of the same
US7347354B2 (en) * 2004-03-23 2008-03-25 Intel Corporation Metallic solder thermal interface material layer and application of the same
US20060065387A1 (en) * 2004-09-28 2006-03-30 General Electric Company Electronic assemblies and methods of making the same
US20060103010A1 (en) * 2004-11-12 2006-05-18 Stats Chippac Ltd. Semiconductor package system with substrate heat sink
US8125076B2 (en) * 2004-11-12 2012-02-28 Stats Chippac Ltd. Semiconductor package system with substrate heat sink
US20060262500A1 (en) * 2005-05-19 2006-11-23 High Tech Computer, Corp. Portable electronic device
US8385070B2 (en) * 2005-05-19 2013-02-26 Htc Corporation Portable electronic device
US20070080441A1 (en) * 2005-08-18 2007-04-12 Scott Kirkman Thermal expansion compensation graded IC package
WO2007050471A2 (en) * 2005-10-25 2007-05-03 Freescale Semiconductor Inc. Method for forming solder contacts on mounted substrates
WO2007050471A3 (en) * 2005-10-25 2007-11-22 Freescale Semiconductor Inc Method for forming solder contacts on mounted substrates
US7723224B2 (en) 2006-06-14 2010-05-25 Freescale Semiconductor, Inc. Microelectronic assembly with back side metallization and method for forming the same
US20070293033A1 (en) * 2006-06-14 2007-12-20 Hill Darrell G Microelectronic assembly with back side metallization and method for forming the same
US20110024895A1 (en) * 2007-11-02 2011-02-03 Texas Instruments Incorporated Semiconductor Package Thermal Performance Enhancement and Method
US8217557B2 (en) * 2010-08-31 2012-07-10 Micron Technology, Inc. Solid state lights with thermosiphon liquid cooling structures and methods
US9057514B2 (en) 2010-08-31 2015-06-16 Micron Technology, Inc. Solid state lights with thermosiphon liquid cooling structures and methods
US20150136357A1 (en) * 2013-11-21 2015-05-21 Honeywell Federal Manufacturing & Technologies, Llc Heat dissipation assembly
US20170165718A1 (en) * 2015-12-10 2017-06-15 Global Unichip Corporation Cleaning apparatus
US10105737B2 (en) * 2015-12-10 2018-10-23 Global Unichip Corporation Cleaning apparatus

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